Matching Items (103)
![130182-Thumbnail Image.png](https://d1rbsgppyrdqq4.cloudfront.net/s3fs-public/styles/width_400/public/2021-04/130182-Thumbnail%20Image.png?versionId=rBuqEedg1KjfvUuLEwP9PK3YpRaDKOnh&X-Amz-Content-Sha256=UNSIGNED-PAYLOAD&X-Amz-Algorithm=AWS4-HMAC-SHA256&X-Amz-Credential=AKIASBVQ3ZQ42ZLA5CUJ/20240614/us-west-2/s3/aws4_request&X-Amz-Date=20240614T112245Z&X-Amz-SignedHeaders=host&X-Amz-Expires=120&X-Amz-Signature=ecf2d835e30c76ef4a00d2fc902c3a18aae0e778e627f1fe2d4415f5440100a5&itok=LyGo5K7r)
ContributorsBraun, W. (Author) / Möller, H. (Author) / Zhang, Yong-Hang (Author)
Created1998
![130183-Thumbnail Image.png](https://d1rbsgppyrdqq4.cloudfront.net/s3fs-public/styles/width_400/public/2021-04/130183-Thumbnail%20Image.png?versionId=wFQOrPF9ED_czDtE_SHquADrDbi_taA_&X-Amz-Content-Sha256=UNSIGNED-PAYLOAD&X-Amz-Algorithm=AWS4-HMAC-SHA256&X-Amz-Credential=AKIASBVQ3ZQ42ZLA5CUJ/20240614/us-west-2/s3/aws4_request&X-Amz-Date=20240614T094549Z&X-Amz-SignedHeaders=host&X-Amz-Expires=120&X-Amz-Signature=a92c80c70e14196e403d7ab0f0a480c5698ff9ee09e125578519a6ebfa7b670c&itok=9tZuxa2O)
ContributorsJohnson, Shane R. (Author) / Kuo, Chau-Hong (Author) / Boonzaayer, Martin D. (Author) / Braun, Wolfgang (Author) / Koelle, Ulrich (Author) / Zhang, Yong-Hang (Author) / Roth, John (Author)
Created1998
![155190-Thumbnail Image.png](https://d1rbsgppyrdqq4.cloudfront.net/s3fs-public/styles/width_400/public/2021-08/155190-Thumbnail%20Image.png?versionId=xxdyEV6qfN3Id6nPYCKSzKN1aLZVK6Fh&X-Amz-Content-Sha256=UNSIGNED-PAYLOAD&X-Amz-Algorithm=AWS4-HMAC-SHA256&X-Amz-Credential=AKIASBVQ3ZQ42ZLA5CUJ/20240614/us-west-2/s3/aws4_request&X-Amz-Date=20240614T112246Z&X-Amz-SignedHeaders=host&X-Amz-Expires=120&X-Amz-Signature=92172fae393742e9186a32502dd2b68a786e0dcece069207af50b0480242eea7&itok=BNdBG6Bi)
Description
Cadmium Telluride (CdTe) possesses preferable optical properties for photovoltaic (PV) applications: a near optimum bandgap of 1.5 eV, and a high absorption coefficient of over 15,000 cm-1 at the band edge. The detailed-balance limiting efficiency is 32.1% with an open-circuit voltage (Voc) of 1.23 V under the AM1.5G spectrum. The record polycrystalline CdTe thin-film cell efficiency has reached 22.1%, with excellent short-circuit current densities (Jsc) and fill-factors (FF). However, the Voc (~900 mV) is still far below the theoretical value, due to the large non-radiative recombination in the polycrystalline CdTe absorber, and the low-level p-type doping.
Monocrystalline CdTe/MgCdTe double-heterostructures (DHs) grown on lattice-matched InSb substrates have demonstrated impressively long carrier lifetimes in both unintentionally doped and Indium-doped n-type CdTe samples. The non-radiative recombination inside of, and at the interfaces of the CdTe absorbers in CdTe/MgCdTe DH samples has been significantly reduced due to the use of lattice-matched InSb substrates, and the excellent passivation provided by the MgCdTe barrier layers. The external luminescent quantum efficiency (η_ext) of n-type CdTe/MgCdTe DHs is up to 3.1%, observed from a 1-µm-thick CdTe/MgCdTe DH doped at 1017 cm-3. The 3.1% η_ext corresponds to an internal luminescent quantum efficiency (η_int) of 91%. Such a high η_ext gives an implied Voc, or quasi-Fermi-level splitting, of 1.13 V.
To obtain actual Voc, the quasi-Fermi-level splitting should be extracted to outside the circuit using a hole-selective contact layer. However, CdTe is difficult to be doped p-type, making it challenging to make efficient PN junction CdTe solar cells. With the use of MgCdTe barrier layers, the hole-contact layer can be defective without affecting the voltage. P-type hydrogenated amorphous silicon is an effective hole-selective contact for CdTe solar cells, enabling monocrystalline CdTe/MgCdTe DH solar cells to achieve Voc over 1.1 V, and a maximum active area efficiency of 18.8% (Jsc = 23.3 mA/cm2, Voc = 1.114 V, and FF = 72.3%). The knowledge gained through making the record-efficiency monocrystalline CdTe cell, particularly the n-type doping and the double-heterostructure design, may be transferable to polycrystalline CdTe thin-film cells and improve their competitiveness in the PV industry.
Monocrystalline CdTe/MgCdTe double-heterostructures (DHs) grown on lattice-matched InSb substrates have demonstrated impressively long carrier lifetimes in both unintentionally doped and Indium-doped n-type CdTe samples. The non-radiative recombination inside of, and at the interfaces of the CdTe absorbers in CdTe/MgCdTe DH samples has been significantly reduced due to the use of lattice-matched InSb substrates, and the excellent passivation provided by the MgCdTe barrier layers. The external luminescent quantum efficiency (η_ext) of n-type CdTe/MgCdTe DHs is up to 3.1%, observed from a 1-µm-thick CdTe/MgCdTe DH doped at 1017 cm-3. The 3.1% η_ext corresponds to an internal luminescent quantum efficiency (η_int) of 91%. Such a high η_ext gives an implied Voc, or quasi-Fermi-level splitting, of 1.13 V.
To obtain actual Voc, the quasi-Fermi-level splitting should be extracted to outside the circuit using a hole-selective contact layer. However, CdTe is difficult to be doped p-type, making it challenging to make efficient PN junction CdTe solar cells. With the use of MgCdTe barrier layers, the hole-contact layer can be defective without affecting the voltage. P-type hydrogenated amorphous silicon is an effective hole-selective contact for CdTe solar cells, enabling monocrystalline CdTe/MgCdTe DH solar cells to achieve Voc over 1.1 V, and a maximum active area efficiency of 18.8% (Jsc = 23.3 mA/cm2, Voc = 1.114 V, and FF = 72.3%). The knowledge gained through making the record-efficiency monocrystalline CdTe cell, particularly the n-type doping and the double-heterostructure design, may be transferable to polycrystalline CdTe thin-film cells and improve their competitiveness in the PV industry.
ContributorsZhao, Yuan (Author) / Zhang, Yong-Hang (Thesis advisor) / Bertoni, Mariana (Committee member) / King, Richard (Committee member) / Holman, Zachary (Committee member) / Arizona State University (Publisher)
Created2016