Matching Items (197)
Description
A new arrangement of the Concerto for Two Horns in E-flat Major, Hob. VIId/6, attributed by some to Franz Joseph Haydn, is presented here. The arrangement reduces the orchestral portion to ten wind instruments, specifically a double wind quintet, to facilitate performance of the work. A full score and a complete set of parts are included. In support of this new arrangement, a discussion of the early treatment of horns in pairs and the subsequent development of the double horn concerto in the eighteenth century provides historical context for the Concerto for Two Horns in E-flat major. A summary of the controversy concerning the identity of the composer of this concerto is followed by a description of the content and structure of each of its three movements. Some comments on the procedures of the arrangement complete the background information.
ContributorsYeh, Guan-Lin (Author) / Ericson, John (Thesis advisor) / Holbrook, Amy (Committee member) / Micklich, Albie (Committee member) / Pilafian, J. Samuel (Committee member) / Arizona State University (Publisher)
Created2011
Description
One of the challenges in future semiconductor device design is excessive rise of power dissipation and device temperatures. With the introduction of new geometrically confined device structures like SOI, FinFET, nanowires and continuous incorporation of new materials with poor thermal conductivities in the device active region, the device thermal problem is expected to become more challenging in coming years. This work examines the degradation in the ON-current due to self-heating effects in 10 nm channel length silicon nanowire transistors. As part of this dissertation, a 3D electrothermal device simulator is developed that self-consistently solves electron Boltzmann transport equation with 3D energy balance equations for both the acoustic and the optical phonons. This device simulator predicts temperature variations and other physical and electrical parameters across the device for different bias and boundary conditions. The simulation results show insignificant current degradation for nanowire self-heating because of pronounced velocity overshoot effect. In addition, this work explores the role of various placement of the source and drain contacts on the magnitude of self-heating effect in nanowire transistors. This work also investigates the simultaneous influence of self-heating and random charge effects on the magnitude of the ON current for both positively and negatively charged single charges. This research suggests that the self-heating effects affect the ON-current in two ways: (1) by lowering the barrier at the source end of the channel, thus allowing more carriers to go through, and (2) via the screening effect of the Coulomb potential. To examine the effect of temperature dependent thermal conductivity of thin silicon films in nanowire transistors, Selberherr's thermal conductivity model is used in the device simulator. The simulations results show larger current degradation because of self-heating due to decreased thermal conductivity . Crystallographic direction dependent thermal conductivity is also included in the device simulations. Larger degradation is observed in the current along the [100] direction when compared to the [110] direction which is in agreement with the values for the thermal conductivity tensor provided by Zlatan Aksamija.
ContributorsHossain, Arif (Author) / Vasileska, Dragica (Thesis advisor) / Ahmed, Shaikh (Committee member) / Bakkaloglu, Bertan (Committee member) / Goodnick, Stephen (Committee member) / Arizona State University (Publisher)
Created2011
Description
The purpose of this project was to commission, perform, and discuss a new work for an instrument pairing not often utilized, oboe and percussion. The composer, Alyssa Morris, was selected in June 2009. Her work, titled Forecast, was completed in October of 2009 and premiered in February of 2010, as part of a program showcasing music for oboe and percussion. Included in this document is a detailed biography of the composer, a description of the four movements of Forecast, performance notes for each movement, a diagram for stage set-up, the full score, the program from the premiere performance with biographies of all the performers involved, and both a live recording and MIDI sound file. The performance notes discuss issues that arose during preparation for the premiere and should help avoid potential pitfalls. TrevCo Music, publisher of the work, graciously allowed inclusion of the full score. This score is solely for use in this document; please visit the publisher's website for purchasing information. The commission and documentation of this composition are intended to add to the repertoire for oboe in an unusual instrument pairing and to encourage further exploration of such combinations.
ContributorsCreamer, Caryn (Author) / Schuring, Martin (Thesis advisor) / Hill, Gary (Committee member) / Holbrook, Amy (Committee member) / Micklich, Albie (Committee member) / Spring, Robert (Committee member) / Arizona State University (Publisher)
Created2011
Description
Although one finds much scholarship on nineteenth-century music in America, one finds relatively little about music in the post-Civil-War frontier west. Generalities concerning small frontier towns of regional importance remain to be discovered. This paper aims to contribute to scholarship by chronicling musical life in the early years of two such towns in northern Arizona territory: Prescott and Flagstaff. Prescott, adjacent to Fort Whipple, was founded in 1864 to serve as capital of the new territory. Primarily home to soldiers and miners, the town was subject to many challenges of frontier life. Flagstaff, ninety miles to the north-northwest, was founded about two decades later in 1883 during the building of the Atlantic & Pacific Railroad, which connected the town to Albuquerque, New Mexico in the east and southern California in the west. Although the particular resources of each town provided many different musical opportunities, extant newspaper articles from Prescott's Arizona Miner and Flagstaff's Arizona Champion describe communities in which musical concerts, dances and theatrical performances provided entertainment and socializing for its citizens. Furthermore, music was an important part of developing institutions such as the church, schools, and fraternal lodges, and the newspapers of both towns advertised musical instruments and sheet music. Both towns were home to amateur musicians, and both offered the occasional opportunity to learn to dance or play an instrument. Although territorial Arizona was sometimes harsh and resources were limited, music was valued in these communities and was a consistent presence in frontier life.
ContributorsJohnson, Amber V (Author) / Oldani, Robert W. (Thesis advisor) / Holbrook, Amy (Committee member) / Saucier, Catherine (Committee member) / Arizona State University (Publisher)
Created2011
Description
Radiation-induced gain degradation in bipolar devices is considered to be the primary threat to linear bipolar circuits operating in the space environment. The damage is primarily caused by charged particles trapped in the Earth's magnetosphere, the solar wind, and cosmic rays. This constant radiation exposure leads to early end-of-life expectancies for many electronic parts. Exposure to ionizing radiation increases the density of oxide and interfacial defects in bipolar oxides leading to an increase in base current in bipolar junction transistors. Radiation-induced excess base current is the primary cause of current gain degradation. Analysis of base current response can enable the measurement of defects generated by radiation exposure. In addition to radiation, the space environment is also characterized by extreme temperature fluctuations. Temperature, like radiation, also has a very strong impact on base current. Thus, a technique for separating the effects of radiation from thermal effects is necessary in order to accurately measure radiation-induced damage in space. This thesis focuses on the extraction of radiation damage in lateral PNP bipolar junction transistors and the space environment. It also describes the measurement techniques used and provides a quantitative analysis methodology for separating radiation and thermal effects on the bipolar base current.
ContributorsCampola, Michael J (Author) / Barnaby, Hugh J (Thesis advisor) / Holbert, Keith E. (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2011
Description
There will always be a need for high current/voltage transistors. A transistor that has the ability to be both or either of these things is the silicon metal-silicon field effect transistor (MESFET). An additional perk that silicon MESFET transistors have is the ability to be integrated into the standard silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) process flow. This makes a silicon MESFET transistor a very valuable device for use in any standard CMOS circuit that may usually need a separate integrated circuit (IC) in order to switch power on or from a high current/voltage because it allows this function to be performed with a single chip thereby cutting costs. The ability for the MESFET to cost effectively satisfy the needs of this any many other high current/voltage device application markets is what drives the study of MESFET optimization. Silicon MESFETs that are integrated into standard SOI CMOS processes often receive dopings during fabrication that would not ideally be there in a process made exclusively for MESFETs. Since these remnants of SOI CMOS processing effect the operation of a MESFET device, their effect can be seen in the current-voltage characteristics of a measured MESFET device. Device simulations are done and compared to measured silicon MESFET data in order to deduce the cause and effect of many of these SOI CMOS remnants. MESFET devices can be made in both fully depleted (FD) and partially depleted (PD) SOI CMOS technologies. Device simulations are used to do a comparison of FD and PD MESFETs in order to show the advantages and disadvantages of MESFETs fabricated in different technologies. It is shown that PD MESFET have the highest current per area capability. Since the PD MESFET is shown to have the highest current capability, a layout optimization method to further increase the current per area capability of the PD silicon MESFET is presented, derived, and proven to a first order.
ContributorsSochacki, John (Author) / Thornton, Trevor J (Thesis advisor) / Schroder, Dieter (Committee member) / Vasileska, Dragica (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2011
Description
The theme for this work is the development of fast numerical algorithms for sparse optimization as well as their applications in medical imaging and source localization using sensor array processing. Due to the recently proposed theory of Compressive Sensing (CS), the $\ell_1$ minimization problem attracts more attention for its ability to exploit sparsity. Traditional interior point methods encounter difficulties in computation for solving the CS applications. In the first part of this work, a fast algorithm based on the augmented Lagrangian method for solving the large-scale TV-$\ell_1$ regularized inverse problem is proposed. Specifically, by taking advantage of the separable structure, the original problem can be approximated via the sum of a series of simple functions with closed form solutions. A preconditioner for solving the block Toeplitz with Toeplitz block (BTTB) linear system is proposed to accelerate the computation. An in-depth discussion on the rate of convergence and the optimal parameter selection criteria is given. Numerical experiments are used to test the performance and the robustness of the proposed algorithm to a wide range of parameter values. Applications of the algorithm in magnetic resonance (MR) imaging and a comparison with other existing methods are included. The second part of this work is the application of the TV-$\ell_1$ model in source localization using sensor arrays. The array output is reformulated into a sparse waveform via an over-complete basis and study the $\ell_p$-norm properties in detecting the sparsity. An algorithm is proposed for minimizing a non-convex problem. According to the results of numerical experiments, the proposed algorithm with the aid of the $\ell_p$-norm can resolve closely distributed sources with higher accuracy than other existing methods.
ContributorsShen, Wei (Author) / Mittlemann, Hans D (Thesis advisor) / Renaut, Rosemary A. (Committee member) / Jackiewicz, Zdzislaw (Committee member) / Gelb, Anne (Committee member) / Ringhofer, Christian (Committee member) / Arizona State University (Publisher)
Created2011
Description
In semiconductor physics, many properties or phenomena of materials can be brought to light through certain changes in the materials. Having a tool to define new material properties so as to highlight certain phenomena greatly increases the ability to understand that phenomena. The generalized Monte Carlo tool allows the user to do that by keeping every parameter used to define a material, within the non-parabolic band approximation, a variable in the control of the user. A material is defined by defining its valleys, energies, valley effective masses and their directions. The types of scattering to be included can also be chosen. The non-parabolic band structure model is used. With the deployment of the generalized Monte Carlo tool onto www.nanoHUB.org the tool will be available to users around the world. This makes it a very useful educational tool that can be incorporated into curriculums. The tool is integrated with Rappture, to allow user-friendly access of the tool. The user can freely define a material in an easy systematic way without having to worry about the coding involved. The output results are automatically graphed and since the code incorporates an analytic band structure model, it is relatively fast. The versatility of the tool has been investigated and has produced results closely matching the experimental values for some common materials. The tool has been uploaded onto www.nanoHUB.org by integrating it with the Rappture interface. By using Rappture as the user interface, one can easily make changes to the current parameter sets to obtain even more accurate results.
ContributorsHathwar, Raghuraj (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen M (Committee member) / Saraniti, Marco (Committee member) / Arizona State University (Publisher)
Created2011
Description
Owen Middleton (b. 1941) enjoys an established and growing reputation as a composer of classical guitar music, but his works for piano are comparatively little known. The close investigation offered here of Middleton's works for piano reveals the same impressive craftsmanship, compelling character, and innovative spirit found in his works for guitar. Indeed, the only significant thing Middleton's piano music currently lacks is the well-deserved attention of professional players and a wider audience. Middleton's piano music needs to be heard, not just discussed, so one of this document's purposes is to provide a recorded sample of his piano works. While the overall repertoire for solo piano is vast, and new works become established in that repertoire with increasing difficulty, Middleton's piano works have a significant potential to find their way into the concert hall as well as the private teaching studio. His solo piano music is highly effective, well suited to the instrument, and, perhaps most importantly, fresh sounding and truly original. His pedagogical works are of equal value. Middleton's piano music offers something for everyone: there one finds daring virtuosity, effusions of passion, intellectual force, colorful imagery, poetry, humor, and even a degree of idiomatic innovation. This study aims to reveal key aspects of the composer's musical style, especially his style of piano writing, and to provide pianists with helpful analytical, technical, and interpretive insights. These descriptions of the music are supported with recorded examples, selected from the works for solo piano written between 1962 and 1993: Sonata for Piano, Childhood Scenes, Katie's Collection, and Toccata for Piano. The complete scores of the recorded works are included in the appendix. A chapter briefly describing the piano pieces since 1993 concludes the study and invites the reader to further investigations of this unique and important body of work.
ContributorsMoreau, Barton Andrew (Author) / Hamilton, Robert (Thesis advisor) / Holbrook, Amy (Committee member) / Campbell, Andrew (Committee member) / Spring, Robert (Committee member) / Gardner, Joshua (Committee member) / Arizona State University (Publisher)
Created2011
Description
In very small electronic devices the alternate capture and emission of carriers at an individual defect site located at the interface of Si:SiO2 of a MOSFET generates discrete switching in the device conductance referred to as a random telegraph signal (RTS) or random telegraph noise (RTN). In this research work, the integration of random defects positioned across the channel at the Si:SiO2 interface from source end to the drain end in the presence of different random dopant distributions are used to conduct Ensemble Monte-Carlo ( EMC ) based numerical simulation of key device performance metrics for 45 nm gate length MOSFET device. The two main performance parameters that affect RTS based reliability measurements are percentage change in threshold voltage and percentage change in drain current fluctuation in the saturation region. It has been observed as a result of the simulation that changes in both and values moderately decrease as the defect position is gradually moved from source end to the drain end of the channel. Precise analytical device physics based model needs to be developed to explain and assess the EMC simulation based higher VT fluctuations as experienced for trap positions at the source side. A new analytical model has been developed that simultaneously takes account of dopant number variations in the channel and depletion region underneath and carrier mobility fluctuations resulting from fluctuations in surface potential barriers. Comparisons of this new analytical model along with existing analytical models are shown to correlate with 3D EMC simulation based model for assessment of VT fluctuations percentage induced by a single interface trap. With scaling of devices beyond 32 nm node, halo doping at the source and drain are routinely incorporated to combat the threshold voltage roll-off that takes place with effective channel length reduction. As a final study on this regard, 3D EMC simulation method based computations of threshold voltage fluctuations have been performed for varying source and drain halo pocket length to illustrate the threshold voltage fluctuations related reliability problems that have been aggravated by trap positions near the source at the interface compared to conventional 45 nm MOSFET.
ContributorsAshraf, Nabil Shovon (Author) / Vasileska, Dragica (Thesis advisor) / Schroder, Dieter (Committee member) / Goodnick, Stephen (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2011