Matching Items (286)
Description
The Magnetoplasmadynamic (MPD) thruster is an electromagnetic thruster that produces a higher specific impulse than conventional chemical rockets and greater thrust densities than electrostatic thrusters, but the well-known operational limit---referred to as ``onset"---imposes a severe limitation efficiency and lifetime. This phenomenon is associated with large fluctuations in operating voltage, high rates of electrode erosion, and three-dimensional instabilities in the plasma flow-field which cannot be adequately represented by two-dimensional, axisymmetric models. Simulations of the Princeton Benchmark Thruster (PBT) were conducted using the three-dimensional version of the magnetohydrodynamic (MHD) code, MACH. Validation of the numerical model is partially achieved by comparison to equivalent simulations conducted using the well-established two-dimensional, axisymmetric version of MACH. Comparisons with available experimental data was subsequently performed to further validate the model and gain insights into the physical processes of MPD acceleration. Thrust, plasma voltage, and plasma flow-field predictions were calculated for the PBT operating with applied currents in the range $6.5kA < J < 23.25kA$ and mass-flow rates of $1g/s$, $3g/s$, and $6g/s$. Comparisons of performance characteristics between the two versions of the code show excellent agreement, indicating that MACH3 can be expected to be as predictive as MACH2 has demonstrated over multiple applications to MPD thrusters. Predicted thrust for operating conditions within the range which exhibited no symptoms of the onset phenomenon experimentally also showed agreement between MACH3 and experiment well within the experimental uncertainty. At operating conditions beyond such values , however, there is a discrepancy---up to $\sim20\%$---which implies that certain significant physical processes associated with onset are not currently being modeled. Such processes are also evident in the experimental total voltage data, as is evident by the characteristic ``voltage hash", but not present in predicted plasma voltage. Additionally, analysis of the predicted plasma flow-field shows no breakdown in azimuthal symmetry, which is expected to be associated with onset. This implies that perhaps certain physical processes are modeled by neither MACH2 nor MACH3; the latter indicating that such phenomenon may not be inherently three dimensional and related to the plasma---as suggested by other efforts---but rather a consequence of electrode material processes which have not been incorporated into the current models.
ContributorsParma, Brian (Author) / Mikellides, Pavlos G (Thesis advisor) / Squires, Kyle (Committee member) / Herrmann, Marcus (Committee member) / Arizona State University (Publisher)
Created2011
Description
As the 3rd generation solar cell, quantum dot solar cells are expected to outperform the first 2 generations with higher efficiency and lower manufacture cost. Currently the main problems for QD cells are the low conversion efficiency and stability. This work is trying to improve the reliability as well as the device performance by inserting an interlayer between the metal cathode and the active layer. Titanium oxide and a novel nitrogen doped titanium oxide were compared and TiOxNy capped device shown a superior performance and stability to TiOx capped one. A unique light anneal effect on the interfacial layer was discovered first time and proved to be the trigger of the enhancement of both device reliability and efficiency. The efficiency was improved by 300% and the device can retain 73.1% of the efficiency with TiOxNy when normal device completely failed after kept for long time. Photoluminescence indicted an increased charge disassociation rate at TiOxNy interface. External quantum efficiency measurement also inferred a significant performance enhancement in TiOxNy capped device, which resulted in a higher photocurrent. X-ray photoelectron spectrometry was performed to explain the impact of light doping on optical band gap. Atomic force microscopy illustrated the effect of light anneal on quantum dot polymer surface. The particle size is increased and the surface composition is changed after irradiation. The mechanism for performance improvement via a TiOx based interlayer was discussed based on a trap filling model. Then Tunneling AFM was performed to further confirm the reliability of interlayer capped organic photovoltaic devices. As a powerful tool based on SPM technique, tunneling AFM was able to explain the reason for low efficiency in non-capped inverted organic photovoltaic devices. The local injection properties as well as the correspondent topography were compared in organic solar cells with or without TiOx interlayer. The current-voltage characteristics were also tested at a single interested point. A severe short-circuit was discovered in non capped devices and a slight reverse bias leakage current was also revealed in TiOx capped device though tunneling AFM results. The failure reason for low stability in normal devices was also discussed comparing to capped devices.
ContributorsYu, Jialin (Author) / Jabbour, Ghassan E. (Thesis advisor) / Alford, Terry L. (Thesis advisor) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2011
Description
Microchannel heat sinks can possess heat transfer characteristics unavailable in conventional heat exchangers; such sinks offer compact solutions to otherwise intractable thermal management problems, notably in small-scale electronics cooling. Flow boiling in microchannels allows a very high heat transfer rate, but is bounded by the critical heat flux (CHF). This thesis presents a theoretical-numerical study of a method to improve the heat rejection capability of a microchannel heat sink via expansion of the channel cross-section along the flow direction. The thermodynamic quality of the refrigerant increases during flow boiling, decreasing the density of the bulk coolant as it flows. This may effect pressure fluctuations in the channels, leading to nonuniform heat transfer and local dryout in regions exceeding CHF. This undesirable phenomenon is counteracted by permitting the cross-section of the microchannel to increase along the direction of flow, allowing more volume for the vapor. Governing equations are derived from a control-volume analysis of a single heated rectangular microchannel; the cross-section is allowed to expand in width and height. The resulting differential equations are solved numerically for a variety of channel expansion profiles and numbers of channels. The refrigerant is R-134a and channel parameters are based on a physical test bed in a related experiment. Significant improvement in CHF is possible with moderate area expansion. Minimal additional manufacturing costs could yield major gains in the utility of microchannel heat sinks. An optimum expansion rate occurred in certain cases, and alterations in the channel width are, in general, more effective at improving CHF than alterations in the channel height. Modest expansion in height enables small width expansions to be very effective.
ContributorsMiner, Mark (Author) / Phelan, Patrick E (Thesis advisor) / Herrmann, Marcus (Committee member) / Chen, Kangping (Committee member) / Arizona State University (Publisher)
Created2011
Description
A design methodology for a new breed of launch vehicle capable of lofting small satellites to orbit is discussed. The growing need for such a rocket is great: the United States has no capabilities in place to quickly launch and reconstitute satellite constellations. A loss of just one satellite, natural or induced, could significantly degrade or entirely eliminate critical space-based assets which would need to be quickly replaced. Furthermore a rocket capable of meeting the requirements for operationally responsive space missions would be an ideal launch platform for small commercial satellites. The proposed architecture to alleviate this lack of an affordable dedicated small-satellite launch vehicle relies upon a combination of expendable medium-range military surplus solid rocket motor assets. The dissertation discusses in detail the current operational capabilities of these military boosters and provides an outline for necessary refurbishments required to successfully place a small payload in orbit. A custom 3DOF trajectory script is used to evaluate the performance of these designs. Concurrently, a parametric cost-mass-performance response surface methodology is employed as an optimization tool to minimize life cycle costs of the proposed vehicles. This optimization scheme is centered on reducing life cycle costs per payload mass delivered rather than raw performance increases. Lastly, a novel upper-stage engine configuration using Hydroxlammonium Nitrate (HAN) is introduced and experimentally static test fired to illustrate the inherent simplicity and high performance of this high density, nontoxic propellant. The motor was operated in both pulse and small duration tests using a newly developed proprietary mixture that is hypergolic with HAN upon contact. This new propellant is demonstrated as a favorable replacement for current space vehicles relying on the heritage use of hydrazine. The end result is a preliminary design of a vehicle built from demilitarized booster assets that complements, rather than replaces, traditional space launch vehicles. This dissertation proves that such capabilities exist and more importantly that the resulting architecture can serve as a viable platform for immediate and affordable access to low Earth orbit.
ContributorsVillarreal, James Kendall (Author) / Squires, Kyle (Thesis advisor) / Lee, Taewoo (Committee member) / Shankar, Praveen (Committee member) / Sharp, Thomas (Committee member) / Wells, Valana (Committee member) / Arizona State University (Publisher)
Created2011
Description
Advancements in computer vision and machine learning have added a new dimension to remote sensing applications with the aid of imagery analysis techniques. Applications such as autonomous navigation and terrain classification which make use of image classification techniques are challenging problems and research is still being carried out to find better solutions. In this thesis, a novel method is proposed which uses image registration techniques to provide better image classification. This method reduces the error rate of classification by performing image registration of the images with the previously obtained images before performing classification. The motivation behind this is the fact that images that are obtained in the same region which need to be classified will not differ significantly in characteristics. Hence, registration will provide an image that matches closer to the previously obtained image, thus providing better classification. To illustrate that the proposed method works, naïve Bayes and iterative closest point (ICP) algorithms are used for the image classification and registration stages respectively. This implementation was tested extensively in simulation using synthetic images and using a real life data set called the Defense Advanced Research Project Agency (DARPA) Learning Applied to Ground Robots (LAGR) dataset. The results show that the ICP algorithm does help in better classification with Naïve Bayes by reducing the error rate by an average of about 10% in the synthetic data and by about 7% on the actual datasets used.
ContributorsMuralidhar, Ashwini (Author) / Saripalli, Srikanth (Thesis advisor) / Papandreou-Suppappola, Antonia (Committee member) / Turaga, Pavan (Committee member) / Arizona State University (Publisher)
Created2011
Description
Semiconductor nanowires are featured by their unique one-dimensional structure which makes them promising for small scale electronic and photonic device applications. Among them, III-V material nanowires are particularly outstanding due to their good electronic properties. In bulk, these materials reveal electron mobility much higher than conventional silicon based devices, for example at room temperature, InAs field effect transistor (FET) has electron mobility of 40,000 cm2/Vs more than 10 times of Si FET. This makes such materials promising for high speed nanowire FETs. With small bandgap, such as 0.354 eV for InAs and 1.52 eV for GaAs, it does not need high voltage to turn on such devices which leads to low power consumption devices. Another feature of direct bandgap allows their applications of optoelectronic devices such as avalanche photodiodes. However, there are challenges to face up. Due to their large surface to volume ratio, nanowire devices typically are strongly affected by the surface states. Although nanowires can be grown into single crystal structure, people observe crystal defects along the wires which can significantly affect the performance of devices. In this work, FETs made of two types of III-V nanowire, GaAs and InAs, are demonstrated. These nanowires are grown by catalyst-free MOCVD growth method. Vertically nanowires are transferred onto patterned substrates for coordinate calibration. Then electrodes are defined by e-beam lithography followed by deposition of contact metals. Prior to metal deposition, however, the substrates are dipped in ammonium hydroxide solution to remove native oxide layer formed on nanowire surface. Current vs. source-drain voltage with different gate bias are measured at room temperature. GaAs nanowire FETs show photo response while InAs nanowire FETs do not show that. Surface passivation is performed on GaAs FETs by using ammonium surfide solution. The best results on current increase is observed with around 20-30 minutes chemical treatment time. Gate response measurements are performed at room temperature, from which field effect mobility as high as 1490 cm2/Vs is extracted for InAs FETs. One major contributor for this is stacking faults defect existing along nanowires. For InAs FETs, thermal excitations observed from temperature dependent results which leads us to investigate potential barriers.
ContributorsLiang, Hanshuang (Author) / Yu, Hongbin (Thesis advisor) / Ferry, David (Committee member) / Tracy, Clarence (Committee member) / Arizona State University (Publisher)
Created2011
Description
A numerical study of incremental spin-up and spin-up from rest of a thermally- stratified fluid enclosed within a right circular cylinder with rigid bottom and side walls and stress-free upper surface is presented. Thermally stratified spin-up is a typical example of baroclinity, which is initiated by a sudden increase in rotation rate and the tilting of isotherms gives rise to baroclinic source of vorticity. Research by (Smirnov et al. [2010a]) showed the differences in evolution of instabilities when Dirichlet and Neumann thermal boundary conditions were applied at top and bottom walls. Study of parametric variations carried out in this dissertation confirmed the instability patterns observed by them for given aspect ratio and Rossby number values greater than 0.5. Also results reveal that flow maintained axisymmetry and stability for short aspect ratio containers independent of amount of rotational increment imparted. Investigation on vorticity components provides framework for baroclinic vorticity feedback mechanism which plays important role in delayed rise of instabilities when Dirichlet thermal Boundary Conditions are applied.
ContributorsKher, Aditya Deepak (Author) / Chen, Kangping (Thesis advisor) / Huang, Huei-Ping (Committee member) / Herrmann, Marcus (Committee member) / Arizona State University (Publisher)
Created2011
Description
A workload-aware low-power neuromorphic controller for dynamic power and thermal management in VLSI systems is presented. The neuromorphic controller predicts future workload and temperature values based on the past values and CPU performance counters and preemptively regulates supply voltage and frequency. System-level measurements from stateof-the-art commercial microprocessors are used to get workload, temperature and CPU performance counter values. The controller is designed and simulated using circuit-design and synthesis tools. At device-level, on-chip planar inductors suffer from low inductance occupying large chip area. On-chip inductors with integrated magnetic materials are designed, simulated and fabricated to explore performance-efficiency trade offs and explore potential applications such as resonant clocking and on-chip voltage regulation. A system level study is conducted to evaluate the effect of on-chip voltage regulator employing magnetic inductors as the output filter. It is concluded that neuromorphic power controller is beneficial for fine-grained per-core power management in conjunction with on-chip voltage regulators utilizing scaled magnetic inductors.
ContributorsSinha, Saurabh (Author) / Cao, Yu (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Yu, Hongbin (Committee member) / Christen, Jennifer B. (Committee member) / Arizona State University (Publisher)
Created2011
Description
CMOS technology is expected to enter the 10nm regime for future integrated circuits (IC). Such aggressive scaling leads to vastly increased variability, posing a grand challenge to robust IC design. Variations in CMOS are often divided into two types: intrinsic variations and process-induced variations. Intrinsic variations are limited by fundamental physics. They are inherent to CMOS structure, considered as one of the ultimate barriers to the continual scaling of CMOS devices. In this work the three primary intrinsic variations sources are studied, including random dopant fluctuation (RDF), line-edge roughness (LER) and oxide thickness fluctuation (OTF). The research is focused on the modeling and simulation of those variations and their scaling trends. Besides the three variations, a time dependent variation source, Random Telegraph Noise (RTN) is also studied. Different from the other three variations, RTN does not contribute much to the total variation amount, but aggregate the worst case of Vth variations in CMOS. In this work a TCAD based simulation study on RTN is presented, and a new SPICE based simulation method for RTN is proposed for time domain circuit analysis. Process-induced variations arise from the imperfection in silicon fabrication, and vary from foundries to foundries. In this work the layout dependent Vth shift due to Rapid-Thermal Annealing (RTA) are investigated. In this work, we develop joint thermal/TCAD simulation and compact modeling tools to analyze performance variability under various layout pattern densities and RTA conditions. Moreover, we propose a suite of compact models that bridge the underlying RTA process with device parameter change for efficient design optimization.
ContributorsYe, Yun, Ph.D (Author) / Cao, Yu (Thesis advisor) / Yu, Hongbin (Committee member) / Song, Hongjiang (Committee member) / Clark, Lawrence (Committee member) / Arizona State University (Publisher)
Created2011
Description
Semiconductor nanowires (NWs) are one dimensional materials and have size quantization effect when the diameter is sufficiently small. They can serve as optical wave guides along the length direction and contain optically active gain at the same time. Due to these unique properties, NWs are now very promising and extensively studied for nanoscale optoelectronic applications. A systematic and comprehensive optical and microstructural study of several important infrared semiconductor NWs is presented in this thesis, which includes InAs, PbS, InGaAs, erbium chloride silicate and erbium silicate. Micro-photoluminescence (PL) and transmission electron microscope (TEM) were utilized in conjunction to characterize the optical and microstructure of these wires. The focus of this thesis is on optical study of semiconductor NWs in the mid-infrared wavelengths. First, differently structured InAs NWs grown using various methods were characterized and compared. Three main PL peaks which are below, near and above InAs bandgap, respectively, were observed. The octadecylthiol self-assembled monolayer was employed to passivate the surface of InAs NWs to eliminate or reduce the effects of the surface states. The band-edge emission from wurtzite-structured NWs was completely recovered after passivatoin. The passivated NWs showed very good stability in air and under heat. In the second part, mid-infrared optical study was conducted on PbS wires of subwavelength diameter and lasing was demonstrated under optical pumping. The PbS wires were grown on Si substrate using chemical vapor deposition and have a rock-salt cubic structure. Single-mode lasing at the wavelength of ~3000-4000 nm was obtained from single as-grown PbS wire up to the temperature of 115 K. PL characterization was also utilized to demonstrate the highest crystallinity of the vertical arrays of InP and InGaAs/InP composition-graded heterostructure NWs made by a top-down fabrication method. TEM-related measurements were performed to study the crystal structures and elemental compositions of the Er-compound core-shell NWs. The core-shell NWs consist of an orthorhombic-structured erbium chloride silicate shell and a cubic-structured silicon core. These NWs provide unique Si-compatible materials with emission at 1530 nm for optical communications and solid state lasers.
ContributorsSun, Minghua (Author) / Ning, Cun-Zheng (Thesis advisor) / Yu, Hongbin (Committee member) / Carpenter, Ray W. (Committee member) / Johnson, Shane (Committee member) / Arizona State University (Publisher)
Created2011