Matching Items (292)
Description
Demand for biosensor research applications is growing steadily. According to a new report by Frost & Sullivan, the biosensor market is expected to reach $14.42 billion by 2016. Clinical diagnostic applications continue to be the largest market for biosensors, and this demand is likely to continue through 2016 and beyond. Biosensor technology for use in clinical diagnostics, however, requires translational research that moves bench science and theoretical knowledge toward marketable products. Despite the high volume of academic research to date, only a handful of biomedical devices have become viable commercial applications. Academic research must increase its focus on practical uses for biosensors. This dissertation is an example of this increased focus, and discusses work to advance microfluidic-based protein biosensor technologies for practical use in clinical diagnostics. Four areas of work are discussed: The first involved work to develop reusable/reconfigurable biosensors that are useful in applications like biochemical science and analytical chemistry that require detailed sensor calibration. This work resulted in a prototype sensor and an in-situ electrochemical surface regeneration technique that can be used to produce microfluidic-based reusable biosensors. The second area of work looked at non-specific adsorption (NSA) of biomolecules, which is a persistent challenge in conventional microfluidic biosensors. The results of this work produced design methods that reduce the NSA. The third area of work involved a novel microfluidic sensing platform that was designed to detect target biomarkers using competitive protein adsorption. This technique uses physical adsorption of proteins to a surface rather than complex and time-consuming immobilization procedures. This method enabled us to selectively detect a thyroid cancer biomarker, thyroglobulin, in a controlled-proteins cocktail and a cardiovascular biomarker, fibrinogen, in undiluted human serum. The fourth area of work involved expanding the technique to produce a unique protein identification method; Pattern-recognition. A sample mixture of proteins generates a distinctive composite pattern upon interaction with a sensing platform consisting of multiple surfaces whereby each surface consists of a distinct type of protein pre-adsorbed on the surface. The utility of the "pattern-recognition" sensing mechanism was then verified via recognition of a particular biomarker, C-reactive protein, in the cocktail sample mixture.
ContributorsChoi, Seokheun (Author) / Chae, Junseok (Thesis advisor) / Tao, Nongjian (Committee member) / Yu, Hongyu (Committee member) / Forzani, Erica (Committee member) / Arizona State University (Publisher)
Created2011
Description
Intimate coupling of Ti2 photocatalysis and biodegradation (ICPB) offers potential for degrading biorecalcitrant and toxic organic compounds much better than possible with conventional wastewater treatments. This study reports on using a novel sponge-type, Ti2-coated biofilm carrier that shows significant adherence of Ti2 to its exterior and the ability to accumulate biomass in its interior (protected from UV light and free radicals). First, this carrier was tested for ICPB in a continuous-flow photocatalytic circulating-bed biofilm reactor (PCBBR) to mineralize biorecalcitrant organic: 2,4,5-trichlorophenol (TCP). Four mechanisms possibly acting of ICPB were tested separately: TCP adsorption, UV photolysis/photocatalysis, and biodegradation. The carrier exhibited strong TCP adsorption, while photolysis was negligible. Photocatalysis produced TCP-degradation products that could be mineralized and the strong adsorption of TCP to the carrier enhanced biodegradation by relieving toxicity. Validating the ICPB concept, biofilm was protected inside the carriers from UV light and free radicals. ICPB significantly lowered the diversity of the bacterial community, but five genera known to biodegrade chlorinated phenols were markedly enriched. Secondly, decolorization and mineralization of reactive dyes by ICPB were investigated on a refined Ti2-coated biofilm carrier in a PCBBR. Two typical reactive dyes: Reactive Black 5 (RB5) and Reactive Yellow 86 (RY86), showed similar first-order kinetics when being photocatalytically decolorized at low pH (~4-5), which was inhibited at neutral pH in the presence of phosphate or carbonate buffer, presumably due to electrostatic repulsion from negatively charged surface sites on Ti2, radical scavenging by phosphate or carbonate, or both. In the PCBBR, photocatalysis alone with Ti2-coated carriers could remove RB5 and COD by 97% and 47%, respectively. Addition of biofilm inside macroporous carriers maintained a similar RB5 removal efficiency, but COD removal increased to 65%, which is evidence of ICPB despite the low pH. A proposed ICPB pathway for RB5 suggests that a major intermediate, a naphthol derivative, was responsible for most of the residual COD. Finally, three low-temperature sintering methods, called O, D and DN, were compared based on photocatalytic efficiency and Ti2 adherence. The DN method had the best Ti2-coating properties and was a successful carrier for ICPB of RB5 in a PCBBR.
ContributorsLi, Guozheng (Author) / Rittmann, Bruce E. (Thesis advisor) / Halden, Rolf (Committee member) / Krajmalnik-Brown, Rosa (Committee member) / Arizona State University (Publisher)
Created2011
Description
Sensing and controlling current flow is a fundamental requirement for many electronic systems, including power management (DC-DC converters and LDOs), battery chargers, electric vehicles, solenoid positioning, motor control, and power monitoring. Current Shunt Monitor (CSM) systems have various applications for precise current monitoring of those aforementioned applications. CSMs enable current measurement across an external sense resistor (RS) in series to current flow. Two different types of CSMs designed and characterized in this paper. First design used direct current reading method and the other design used indirect current reading method. Proposed CSM systems can sense power supply current ranging from 1mA to 200mA for the direct current reading topology and from 1mA to 500mA for the indirect current reading topology across a typical board Cu-trace resistance of 1 ohm with less than 10 µV input-referred offset, 0.3 µV/°C offset drift and 0.1% accuracy for both topologies. Proposed systems avoid using a costly zero-temperature coefficient (TC) sense resistor that is normally used in typical CSM systems. Instead, both of the designs used existing Cu-trace on the printed circuit board (PCB) in place of the costly resistor. The systems use chopper stabilization at the front-end amplifier signal path to suppress input-referred offset down to less than 10 µV. Switching current-mode (SI) FIR filtering technique is used at the instrumentation amplifier output to filter out the chopping ripple caused by input offset and flicker noise by averaging half of the phase 1 signal and the other half of the phase 2 signal. In addition, residual offset mainly caused by clock feed-through and charge injection of the chopper switches at the chopping frequency and its multiple frequencies notched out by the since response of the SI-FIR filter. A frequency domain Sigma Delta ADC which is used for the indirect current reading type design enables a digital interface to processor applications with minimally added circuitries to build a simple 1st order Sigma Delta ADC. The CSMs are fabricated on a 0.7µm CMOS process with 3 levels of metal, with maximum Vds tolerance of 8V and operates across a common mode range of 0 to 26V for the direct current reading type and of 0 to 30V for the indirect current reading type achieving less than 10nV/sqrtHz of flicker noise at 100 Hz for both approaches. By using a semi-digital SI-FIR filter, residual chopper offset is suppressed down to 0.5mVpp from a baseline of 8mVpp, which is equivalent to 25dB suppression.
ContributorsYeom, Hyunsoo (Author) / Bakkaloglu, Bertan (Thesis advisor) / Kiaei, Sayfe (Committee member) / Ozev, Sule (Committee member) / Yu, Hongyu (Committee member) / Arizona State University (Publisher)
Created2011
Description
There will always be a need for high current/voltage transistors. A transistor that has the ability to be both or either of these things is the silicon metal-silicon field effect transistor (MESFET). An additional perk that silicon MESFET transistors have is the ability to be integrated into the standard silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) process flow. This makes a silicon MESFET transistor a very valuable device for use in any standard CMOS circuit that may usually need a separate integrated circuit (IC) in order to switch power on or from a high current/voltage because it allows this function to be performed with a single chip thereby cutting costs. The ability for the MESFET to cost effectively satisfy the needs of this any many other high current/voltage device application markets is what drives the study of MESFET optimization. Silicon MESFETs that are integrated into standard SOI CMOS processes often receive dopings during fabrication that would not ideally be there in a process made exclusively for MESFETs. Since these remnants of SOI CMOS processing effect the operation of a MESFET device, their effect can be seen in the current-voltage characteristics of a measured MESFET device. Device simulations are done and compared to measured silicon MESFET data in order to deduce the cause and effect of many of these SOI CMOS remnants. MESFET devices can be made in both fully depleted (FD) and partially depleted (PD) SOI CMOS technologies. Device simulations are used to do a comparison of FD and PD MESFETs in order to show the advantages and disadvantages of MESFETs fabricated in different technologies. It is shown that PD MESFET have the highest current per area capability. Since the PD MESFET is shown to have the highest current capability, a layout optimization method to further increase the current per area capability of the PD silicon MESFET is presented, derived, and proven to a first order.
ContributorsSochacki, John (Author) / Thornton, Trevor J (Thesis advisor) / Schroder, Dieter (Committee member) / Vasileska, Dragica (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2011
Description
ABSTRACT The purpose of this study is to demonstrate that stable lipid bilayers can be set up on an array of silicon micropores and can be used as sites for self-inserting ion-channel proteins which can be studied independently of each other. In course of this study an acrylic based holder was designed and machined to ensure leak-free fluidic access to the silicon micropores and physical isolation of the individual array channels. To measure the ion-channel currents, we simulated, designed and manufactured low-noise transimpedance amplifiers and support circuits based on published patch clamp amplifier designs, using currently available surface-mount components. This was done in order to achieve a reduction in size and costs as well as isolation of individual channels without the need for multiplexing of the input. During the experiments performed, stable bilayers were formed across an array of four vertically mounted 30 µm silicon micropores and OmpF porins were added for self insertion in each of the bilayers. To further demonstrate the independence of these bilayer recording sites, the antibiotic Ampicillin (2.5 mM) was added to one of the fluidic wells. The ionic current in each of the wells was recorded simultaneously. Sub-conductance states of Ompf porin were observed in two of the measurement sites. In addition, the conductance steps in the site containing the antibiotic could be clearly seen to be larger compared to those of the unmodified site. This is due to the transient blocking of ion flow through the porin due to translocation of the antibiotic. Based on this demonstration, ion-channel array reconstitution is a potential method for efficient electrophysiological characterization of different types of ion-channels simultaneously as well as for studying membrane permeation processes.
ContributorsRamakrishnan, Shankar (Author) / Goryll, Michael (Thesis advisor) / Thornton, Trevor J (Committee member) / Blain Christen, Jennifer M (Committee member) / Arizona State University (Publisher)
Created2011
Description
In the last few years, significant advances in nanofabrication have allowed tailoring of structures and materials at a molecular level enabling nanofabrication with precise control of dimensions and organization at molecular length scales, a development leading to significant advances in nanoscale systems. Although, the direction of progress seems to follow the path of microelectronics, the fundamental physics in a nanoscale system changes more rapidly compared to microelectronics, as the size scale is decreased. The changes in length, area, and volume ratios due to reduction in size alter the relative influence of various physical effects determining the overall operation of a system in unexpected ways. One such category of nanofluidic structures demonstrating unique ionic and molecular transport characteristics are nanopores. Nanopores derive their unique transport characteristics from the electrostatic interaction of nanopore surface charge with aqueous ionic solutions. In this doctoral research cylindrical nanopores, in single and array configuration, were fabricated in silicon-on-insulator (SOI) using a combination of electron beam lithography (EBL) and reactive ion etching (RIE). The fabrication method presented is compatible with standard semiconductor foundries and allows fabrication of nanopores with desired geometries and precise dimensional control, providing near ideal and isolated physical modeling systems to study ion transport at the nanometer level. Ion transport through nanopores was characterized by measuring ionic conductances of arrays of nanopores of various diameters for a wide range of concentration of aqueous hydrochloric acid (HCl) ionic solutions. Measured ionic conductances demonstrated two distinct regimes based on surface charge interactions at low ionic concentrations and nanopore geometry at high ionic concentrations. Field effect modulation of ion transport through nanopore arrays, in a fashion similar to semiconductor transistors, was also studied. Using ionic conductance measurements, it was shown that the concentration of ions in the nanopore volume was significantly changed when a gate voltage on nanopore arrays was applied, hence controlling their transport. Based on the ion transport results, single nanopores were used to demonstrate their application as nanoscale particle counters by using polystyrene nanobeads, monodispersed in aqueous HCl solutions of different molarities. Effects of field effect modulation on particle transition events were also demonstrated.
ContributorsJoshi, Punarvasu (Author) / Thornton, Trevor J (Thesis advisor) / Goryll, Michael (Thesis advisor) / Spanias, Andreas (Committee member) / Saraniti, Marco (Committee member) / Arizona State University (Publisher)
Created2011
Description
The theme for this work is the development of fast numerical algorithms for sparse optimization as well as their applications in medical imaging and source localization using sensor array processing. Due to the recently proposed theory of Compressive Sensing (CS), the $\ell_1$ minimization problem attracts more attention for its ability to exploit sparsity. Traditional interior point methods encounter difficulties in computation for solving the CS applications. In the first part of this work, a fast algorithm based on the augmented Lagrangian method for solving the large-scale TV-$\ell_1$ regularized inverse problem is proposed. Specifically, by taking advantage of the separable structure, the original problem can be approximated via the sum of a series of simple functions with closed form solutions. A preconditioner for solving the block Toeplitz with Toeplitz block (BTTB) linear system is proposed to accelerate the computation. An in-depth discussion on the rate of convergence and the optimal parameter selection criteria is given. Numerical experiments are used to test the performance and the robustness of the proposed algorithm to a wide range of parameter values. Applications of the algorithm in magnetic resonance (MR) imaging and a comparison with other existing methods are included. The second part of this work is the application of the TV-$\ell_1$ model in source localization using sensor arrays. The array output is reformulated into a sparse waveform via an over-complete basis and study the $\ell_p$-norm properties in detecting the sparsity. An algorithm is proposed for minimizing a non-convex problem. According to the results of numerical experiments, the proposed algorithm with the aid of the $\ell_p$-norm can resolve closely distributed sources with higher accuracy than other existing methods.
ContributorsShen, Wei (Author) / Mittlemann, Hans D (Thesis advisor) / Renaut, Rosemary A. (Committee member) / Jackiewicz, Zdzislaw (Committee member) / Gelb, Anne (Committee member) / Ringhofer, Christian (Committee member) / Arizona State University (Publisher)
Created2011
Description
Negative bias temperature instability (NBTI) and channel hot carrier (CHC) are important reliability issues impacting analog circuit performance and lifetime. Compact reliability models and efficient simulation methods are essential for circuit level reliability prediction. This work proposes a set of compact models of NBTI and CHC effects for analog and mixed-signal circuit, and a direct prediction method which is different from conventional simulation methods. This method is applied in circuit benchmarks and evaluated. This work helps with improving efficiency and accuracy of circuit aging prediction.
ContributorsZheng, Rui (Author) / Cao, Yu (Thesis advisor) / Yu, Hongyu (Committee member) / Bakkaloglu, Bertan (Committee member) / Arizona State University (Publisher)
Created2011
Description
In very small electronic devices the alternate capture and emission of carriers at an individual defect site located at the interface of Si:SiO2 of a MOSFET generates discrete switching in the device conductance referred to as a random telegraph signal (RTS) or random telegraph noise (RTN). In this research work, the integration of random defects positioned across the channel at the Si:SiO2 interface from source end to the drain end in the presence of different random dopant distributions are used to conduct Ensemble Monte-Carlo ( EMC ) based numerical simulation of key device performance metrics for 45 nm gate length MOSFET device. The two main performance parameters that affect RTS based reliability measurements are percentage change in threshold voltage and percentage change in drain current fluctuation in the saturation region. It has been observed as a result of the simulation that changes in both and values moderately decrease as the defect position is gradually moved from source end to the drain end of the channel. Precise analytical device physics based model needs to be developed to explain and assess the EMC simulation based higher VT fluctuations as experienced for trap positions at the source side. A new analytical model has been developed that simultaneously takes account of dopant number variations in the channel and depletion region underneath and carrier mobility fluctuations resulting from fluctuations in surface potential barriers. Comparisons of this new analytical model along with existing analytical models are shown to correlate with 3D EMC simulation based model for assessment of VT fluctuations percentage induced by a single interface trap. With scaling of devices beyond 32 nm node, halo doping at the source and drain are routinely incorporated to combat the threshold voltage roll-off that takes place with effective channel length reduction. As a final study on this regard, 3D EMC simulation method based computations of threshold voltage fluctuations have been performed for varying source and drain halo pocket length to illustrate the threshold voltage fluctuations related reliability problems that have been aggravated by trap positions near the source at the interface compared to conventional 45 nm MOSFET.
ContributorsAshraf, Nabil Shovon (Author) / Vasileska, Dragica (Thesis advisor) / Schroder, Dieter (Committee member) / Goodnick, Stephen (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2011
Description
The past two decades have been monumental in the advancement of microchips designed for a diverse range of medical applications and bio-analysis. Owing to the remarkable progress in micro-fabrication technology, complex chemical and electro-mechanical features can now be integrated into chip-scale devices for use in biosensing and physiological measurements. Some of these devices have made enormous contributions in the study of complex biochemical processes occurring at the molecular and cellular levels while others overcame the challenges of replicating various functions of human organs as implant systems. This thesis presents test data and analysis of two such systems. First, an ISFET based pH sensor is characterized for its performance in a continuous pH monitoring application. Many of the basic properties of ISFETs including I-V characteristics, pH sensitivity and more importantly, its long term drift behavior have been investigated. A new theory based on frequent switching of electric field across the gate oxide to decrease the rate of current drift has been successfully implemented with the help of an automated data acquisition and switching system. The system was further tested for a range of duty cycles in order to accurately determine the minimum length of time required to fully reset the drift. Second, a microfluidic based vestibular implant system was tested for its underlying characteristics as a light sensor. A computer controlled tilt platform was then implemented to further test its sensitivity to inclinations and thus it‟s more important role as a tilt sensor. The sensor operates through means of optoelectronics and relies on the signals generated from photodiode arrays as a result of light being incident on them. ISFET results show a significant drop in the overall drift and good linear characteristics. The drift was seen to reset at less than an hour. The photodiodes show ideal I-V comparison between photoconductive and photovoltaic modes of operation with maximum responsivity at 400nm and a shunt resistance of 394 MΩ. Additionally, post-processing of the tilt sensor to incorporate the sensing fluids is outlined. Based on several test and fabrication results, a possible method of sealing the open cavity of the chip using a UV curable epoxy has been discussed.
ContributorsMamun, Samiha (Author) / Christen, Jennifer Blain (Thesis advisor) / Goryll, Michael (Committee member) / Yu, Hongyu (Committee member) / Arizona State University (Publisher)
Created2011