Matching Items (203)
Description
With the increasing focus on developing environmentally benign electronic packages, lead-free solder alloys have received a great deal of attention. Mishandling of packages, during manufacture, assembly, or by the user may cause failure of solder joint. A fundamental understanding of the behavior of lead-free solders under mechanical shock conditions is lacking. Reliable experimental and numerical analysis of lead-free solder joints in the intermediate strain rate regime need to be investigated. This dissertation mainly focuses on exploring the mechanical shock behavior of lead-free tin-rich solder alloys via multiscale modeling and numerical simulations. First, the macroscopic stress/strain behaviors of three bulk lead-free tin-rich solders were tested over a range of strain rates from 0.001/s to 30/s. Finite element analysis was conducted to determine appropriate specimen geometry that could reach a homogeneous stress/strain field and a relatively high strain rate. A novel self-consistent true stress correction method is developed to compensate the inaccuracy caused by the triaxial stress state at the post-necking stage. Then the material property of micron-scale intermetallic was examined by micro-compression test. The accuracy of this measure is systematically validated by finite element analysis, and empirical adjustments are provided. Moreover, the interfacial property of the solder/intermetallic interface is investigated, and a continuum traction-separation law of this interface is developed from an atomistic-based cohesive element method. The macroscopic stress/strain relation and microstructural properties are combined together to form a multiscale material behavior via a stochastic approach for both solder and intermetallic. As a result, solder is modeled by porous plasticity with random voids, and intermetallic is characterized as brittle material with random vulnerable region. Thereafter, the porous plasticity fracture of the solders and the brittle fracture of the intermetallics are coupled together in one finite element model. Finally, this study yields a multiscale model to understand and predict the mechanical shock behavior of lead-free tin-rich solder joints. Different fracture patterns are observed for various strain rates and/or intermetallic thicknesses. The predictions have a good agreement with the theory and experiments.
ContributorsFei, Huiyang (Author) / Jiang, Hanqing (Thesis advisor) / Chawla, Nikhilesh (Thesis advisor) / Tasooji, Amaneh (Committee member) / Mobasher, Barzin (Committee member) / Rajan, Subramaniam D. (Committee member) / Arizona State University (Publisher)
Created2011
Description
As the 3rd generation solar cell, quantum dot solar cells are expected to outperform the first 2 generations with higher efficiency and lower manufacture cost. Currently the main problems for QD cells are the low conversion efficiency and stability. This work is trying to improve the reliability as well as the device performance by inserting an interlayer between the metal cathode and the active layer. Titanium oxide and a novel nitrogen doped titanium oxide were compared and TiOxNy capped device shown a superior performance and stability to TiOx capped one. A unique light anneal effect on the interfacial layer was discovered first time and proved to be the trigger of the enhancement of both device reliability and efficiency. The efficiency was improved by 300% and the device can retain 73.1% of the efficiency with TiOxNy when normal device completely failed after kept for long time. Photoluminescence indicted an increased charge disassociation rate at TiOxNy interface. External quantum efficiency measurement also inferred a significant performance enhancement in TiOxNy capped device, which resulted in a higher photocurrent. X-ray photoelectron spectrometry was performed to explain the impact of light doping on optical band gap. Atomic force microscopy illustrated the effect of light anneal on quantum dot polymer surface. The particle size is increased and the surface composition is changed after irradiation. The mechanism for performance improvement via a TiOx based interlayer was discussed based on a trap filling model. Then Tunneling AFM was performed to further confirm the reliability of interlayer capped organic photovoltaic devices. As a powerful tool based on SPM technique, tunneling AFM was able to explain the reason for low efficiency in non-capped inverted organic photovoltaic devices. The local injection properties as well as the correspondent topography were compared in organic solar cells with or without TiOx interlayer. The current-voltage characteristics were also tested at a single interested point. A severe short-circuit was discovered in non capped devices and a slight reverse bias leakage current was also revealed in TiOx capped device though tunneling AFM results. The failure reason for low stability in normal devices was also discussed comparing to capped devices.
ContributorsYu, Jialin (Author) / Jabbour, Ghassan E. (Thesis advisor) / Alford, Terry L. (Thesis advisor) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2011
Description
The Kasturba Gandhi Balika Vidyalaya (KGBV) policy scheme launched in 2004 by the Ministry of Human Resource Development, the Government of India, aims to provide secondary level education (grade 6-8) for girls residing predominantly in minority communities, the Scheduled Caste (SC), the Scheduled Tribe (ST), and the Other Backward Caste (OBC). Since its launch, the Government of India established 2,578 KGBV schools in 27 states and union territories (UTs). The present study examines the new policy and its implementation at three KGBV schools located in rural villages of Uttar Pradesh (UP), India. The purpose was to analyze the Government of India's approach to increasing education opportunity and participation for educationally disadvantaged girls using the empowerment framework developed by Deepa Narayan. Observations at three schools, interviews with teachers and staff members of the implementation agency (i.e., Mahila Samakhya (MS)), and surveys administered to 139 teachers were conducted over a four month period in 2009. Adopting creative teaching approaches and learning activities, MS creates safe learning community which is appropriate for the rural girls. MS gives special attention to nurturing the girls' potential and empowering them inside and outside the school environment through social discussion, parental involvement, rigid discipline and structure, health and hygiene education, and physical and mental training. Interviews with the state program director and coordinators identified some conflicts within government policy schemes such as the Teacher-pupil ratios guidelines as a part of the programs for the universalization of elementary education. Major challenges include a high turnover rate of teachers, a lack of female teachers, a lack of provision after Class 8, and inadequate budget for medical treatment. Recommendations include promoting active involvement of male members in the process of girls' empowerment, making MS approaches of girls' education in rural settings standardized for wider dissemination, and developing flexible and strong partnership among local agencies and government organizations for effective service delivery.
ContributorsWatanabe, Miku (Author) / Fischman, Gustavo (Thesis advisor) / Wiley, Terrence (Committee member) / Mccarty, Teresa (Committee member) / Arizona State University (Publisher)
Created2011
Description
Semiconductor nanowires are featured by their unique one-dimensional structure which makes them promising for small scale electronic and photonic device applications. Among them, III-V material nanowires are particularly outstanding due to their good electronic properties. In bulk, these materials reveal electron mobility much higher than conventional silicon based devices, for example at room temperature, InAs field effect transistor (FET) has electron mobility of 40,000 cm2/Vs more than 10 times of Si FET. This makes such materials promising for high speed nanowire FETs. With small bandgap, such as 0.354 eV for InAs and 1.52 eV for GaAs, it does not need high voltage to turn on such devices which leads to low power consumption devices. Another feature of direct bandgap allows their applications of optoelectronic devices such as avalanche photodiodes. However, there are challenges to face up. Due to their large surface to volume ratio, nanowire devices typically are strongly affected by the surface states. Although nanowires can be grown into single crystal structure, people observe crystal defects along the wires which can significantly affect the performance of devices. In this work, FETs made of two types of III-V nanowire, GaAs and InAs, are demonstrated. These nanowires are grown by catalyst-free MOCVD growth method. Vertically nanowires are transferred onto patterned substrates for coordinate calibration. Then electrodes are defined by e-beam lithography followed by deposition of contact metals. Prior to metal deposition, however, the substrates are dipped in ammonium hydroxide solution to remove native oxide layer formed on nanowire surface. Current vs. source-drain voltage with different gate bias are measured at room temperature. GaAs nanowire FETs show photo response while InAs nanowire FETs do not show that. Surface passivation is performed on GaAs FETs by using ammonium surfide solution. The best results on current increase is observed with around 20-30 minutes chemical treatment time. Gate response measurements are performed at room temperature, from which field effect mobility as high as 1490 cm2/Vs is extracted for InAs FETs. One major contributor for this is stacking faults defect existing along nanowires. For InAs FETs, thermal excitations observed from temperature dependent results which leads us to investigate potential barriers.
ContributorsLiang, Hanshuang (Author) / Yu, Hongbin (Thesis advisor) / Ferry, David (Committee member) / Tracy, Clarence (Committee member) / Arizona State University (Publisher)
Created2011
Description
A workload-aware low-power neuromorphic controller for dynamic power and thermal management in VLSI systems is presented. The neuromorphic controller predicts future workload and temperature values based on the past values and CPU performance counters and preemptively regulates supply voltage and frequency. System-level measurements from stateof-the-art commercial microprocessors are used to get workload, temperature and CPU performance counter values. The controller is designed and simulated using circuit-design and synthesis tools. At device-level, on-chip planar inductors suffer from low inductance occupying large chip area. On-chip inductors with integrated magnetic materials are designed, simulated and fabricated to explore performance-efficiency trade offs and explore potential applications such as resonant clocking and on-chip voltage regulation. A system level study is conducted to evaluate the effect of on-chip voltage regulator employing magnetic inductors as the output filter. It is concluded that neuromorphic power controller is beneficial for fine-grained per-core power management in conjunction with on-chip voltage regulators utilizing scaled magnetic inductors.
ContributorsSinha, Saurabh (Author) / Cao, Yu (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Yu, Hongbin (Committee member) / Christen, Jennifer B. (Committee member) / Arizona State University (Publisher)
Created2011
Description
CMOS technology is expected to enter the 10nm regime for future integrated circuits (IC). Such aggressive scaling leads to vastly increased variability, posing a grand challenge to robust IC design. Variations in CMOS are often divided into two types: intrinsic variations and process-induced variations. Intrinsic variations are limited by fundamental physics. They are inherent to CMOS structure, considered as one of the ultimate barriers to the continual scaling of CMOS devices. In this work the three primary intrinsic variations sources are studied, including random dopant fluctuation (RDF), line-edge roughness (LER) and oxide thickness fluctuation (OTF). The research is focused on the modeling and simulation of those variations and their scaling trends. Besides the three variations, a time dependent variation source, Random Telegraph Noise (RTN) is also studied. Different from the other three variations, RTN does not contribute much to the total variation amount, but aggregate the worst case of Vth variations in CMOS. In this work a TCAD based simulation study on RTN is presented, and a new SPICE based simulation method for RTN is proposed for time domain circuit analysis. Process-induced variations arise from the imperfection in silicon fabrication, and vary from foundries to foundries. In this work the layout dependent Vth shift due to Rapid-Thermal Annealing (RTA) are investigated. In this work, we develop joint thermal/TCAD simulation and compact modeling tools to analyze performance variability under various layout pattern densities and RTA conditions. Moreover, we propose a suite of compact models that bridge the underlying RTA process with device parameter change for efficient design optimization.
ContributorsYe, Yun, Ph.D (Author) / Cao, Yu (Thesis advisor) / Yu, Hongbin (Committee member) / Song, Hongjiang (Committee member) / Clark, Lawrence (Committee member) / Arizona State University (Publisher)
Created2011
Description
In this dissertation I present data gathered from an eleven-month qualitative research study with adolescents living and working on the streets of Lima, Peru. Through the pairing of photovoice with participant observations, this work incorporates distinctive methodological and theoretical viewpoints in order to complicate prevailing understandings of street life. In this dissertation, I examine the identities that children and adolescents on the street develop in context, and the ways in which photography can be a useful tool in understanding identity development among this population. Through a framework integrating theories of identity and identity performance with spatial theories, I outline how identity development among children and adolescents living on the street is directly connected to their relationships with the urban landscape and the outreach organizations that serve them. The organizations and institutions that surround children on the street shape who they are, how they are perceived by society, and how they view and understand themselves in context. It is through the interaction with aid organizations and the urban landscape that a street identity is learned and developed. Furthermore, as organizations, children and adolescents come together within the context of the city, a unique street space is created. I argue that identity and agency are directly tied to this space. I also present the street as a thirdspace of possibility, where children and adolescents are able to act out various aspects of the self that they would be unable to pursue otherwise. Weaved throughout this dissertation are non-traditional writing forms including narrative and critical personal narrative addressing my own experiences conducting this research, my impact on the research context, and how I understand the data gathered.
ContributorsJoanou, Jamie Patrice (Author) / Swadener, Beth B. (Thesis advisor) / Margolis, Eric (Committee member) / Arzubiaga, Angela (Committee member) / Fischman, Gustavo (Committee member) / Arizona State University (Publisher)
Created2011
Description
The Civil Rights Project estimates that Black girls are among the least likely to graduate from high school. More specifically, only about half, or 56%, of freshman Black girls graduate with their class four years later. Beyond the statistics little is known about Black girls who drop out, why they leave school and what happens to them once they are gone. This study is a grounded theory analysis of the stories eight adult Black women told about dropping out of high school with a particular focus on how dropping out affected their lives as workers, mothers and returners to education. There is one conclusion about dropping out and another about Black female identity. First, the women in my study were adolescents during the 1980s, experienced life at the intersection of Blackness, womaness, and poverty and lived in the harsh conditions of a Black American hyperghetto. Using a synthesis between intersectionality and hyperghettoization I found that the women were so determined to improve their economic and personal conditions that they took on occupations that seemed to promise freedom, wealth and safety. Because they were so focused on their new lives, their school attendance suffered as a consequence. In the second conclusion I argued that Black women draw their insights about Black female identity from two competing sources. The two sources are their lived experience and popular controlling images of Black female identity.
ContributorsGriffin, Erica Nicole (Author) / Powers, Jeanne (Thesis advisor) / Fischman, Gustavo (Committee member) / Margolis, Eric (Committee member) / Arizona State University (Publisher)
Created2011
Description
ABSTRACT Early childhood education (ECE) teacher professional development refers to the various modalities of providing new and or additional content knowledge to the teachers who work with children birth to five. The purpose of this study was to examine the effectiveness of an Arizona United Way-administered intervention project designed to provide focused professional development activities to 15 ECE teachers at seven high-need, center-based early care and education settings. Specifically, this study determined if these interventions influenced the teachers to undertake formative career path changes such as college coursework. In addition, the study also sought to understand the views, beliefs, and attitudes of these ECE teachers and if/how their perspectives influenced their educational career paths. Data were gathered through the triangulated use of participants' responses to a survey, face-to-face interviews, and a focus group. Findings demonstrate that the teachers understand that professional development, such as college coursework, can increase a person's knowledge on a given topic or field of study, but that they feel qualified to be a teacher for children birth to five even though 12 of the 15 teachers do not hold an AA/AAS or BA/BS degree in any area of study. Further, the teachers suggested that if they were to earn a degree it would most likely be in another field of study beside education. These responses provide another reason professional development efforts to encourage ECE teachers to seek degrees in the field of education may be failing. If ECE teachers wanted to invest time, energy and funds they would acquire a degree, which provided more financial reward and professional respect.
ContributorsOrtiz, Karen J. (Karen Jean) (Author) / Kelley, Michael F. (Thesis advisor) / Enz, Billie J. (Thesis advisor) / Romero, Mary (Committee member) / Fischman, Gustavo (Committee member) / Arizona State University (Publisher)
Created2011
Description
Semiconductor nanowires (NWs) are one dimensional materials and have size quantization effect when the diameter is sufficiently small. They can serve as optical wave guides along the length direction and contain optically active gain at the same time. Due to these unique properties, NWs are now very promising and extensively studied for nanoscale optoelectronic applications. A systematic and comprehensive optical and microstructural study of several important infrared semiconductor NWs is presented in this thesis, which includes InAs, PbS, InGaAs, erbium chloride silicate and erbium silicate. Micro-photoluminescence (PL) and transmission electron microscope (TEM) were utilized in conjunction to characterize the optical and microstructure of these wires. The focus of this thesis is on optical study of semiconductor NWs in the mid-infrared wavelengths. First, differently structured InAs NWs grown using various methods were characterized and compared. Three main PL peaks which are below, near and above InAs bandgap, respectively, were observed. The octadecylthiol self-assembled monolayer was employed to passivate the surface of InAs NWs to eliminate or reduce the effects of the surface states. The band-edge emission from wurtzite-structured NWs was completely recovered after passivatoin. The passivated NWs showed very good stability in air and under heat. In the second part, mid-infrared optical study was conducted on PbS wires of subwavelength diameter and lasing was demonstrated under optical pumping. The PbS wires were grown on Si substrate using chemical vapor deposition and have a rock-salt cubic structure. Single-mode lasing at the wavelength of ~3000-4000 nm was obtained from single as-grown PbS wire up to the temperature of 115 K. PL characterization was also utilized to demonstrate the highest crystallinity of the vertical arrays of InP and InGaAs/InP composition-graded heterostructure NWs made by a top-down fabrication method. TEM-related measurements were performed to study the crystal structures and elemental compositions of the Er-compound core-shell NWs. The core-shell NWs consist of an orthorhombic-structured erbium chloride silicate shell and a cubic-structured silicon core. These NWs provide unique Si-compatible materials with emission at 1530 nm for optical communications and solid state lasers.
ContributorsSun, Minghua (Author) / Ning, Cun-Zheng (Thesis advisor) / Yu, Hongbin (Committee member) / Carpenter, Ray W. (Committee member) / Johnson, Shane (Committee member) / Arizona State University (Publisher)
Created2011