Matching Items (4)
Description
Integrated photonics requires high gain optical materials in the telecom wavelength range for optical amplifiers and coherent light sources. Erbium (Er) containing materials are ideal candidates due to the 1.5 μm emission from Er3+ ions. However, the Er density in typical Er-doped materials is less than 1 x 1020 cm-3, thus limiting the maximum optical gain to a few dB/cm, too small to be useful for integrated photonics applications. Er compounds could potentially solve this problem since they contain much higher Er density. So far the existing Er compounds suffer from short lifetime and strong upconversion effects, mainly due to poor quality of crystals produced by various methods of thin film growth and deposition. This dissertation explores a new Er compound: erbium chloride silicate (ECS, Er3(SiO4)2Cl ) in the nanowire form, which facilitates the growth of high quality single crystals. Growth methods for such single crystal ECS nanowires have been established. Various structural and optical characterizations have been carried out. The high crystal quality of ECS material leads to a long lifetime of the first excited state of Er3+ ions up to 1 ms at Er density higher than 1022 cm-3. This Er lifetime-density product was found to be the largest among all Er containing materials. A unique integrating sphere method was developed to measure the absorption cross section of ECS nanowires from 440 to 1580 nm. Pump-probe experiments demonstrated a 644 dB/cm signal enhancement from a single ECS wire. It was estimated that such large signal enhancement can overcome the absorption to result in a net material gain, but not sufficient to compensate waveguide propagation loss. In order to suppress the upconversion process in ECS, Ytterbium (Yb) and Yttrium (Y) ions are introduced as substituent ions of Er in the ECS crystal structure to reduce Er density. While the addition of Yb ions only partially succeeded, erbium yttrium chloride silicate (EYCS) with controllable Er density was synthesized successfully. EYCS with 30 at. % Er was found to be the best. It shows the strongest PL emission at 1.5 μm, and thus can be potentially used as a high gain material.
ContributorsYin, Leijun (Author) / Ning, Cun-Zheng (Thesis advisor) / Chamberlin, Ralph (Committee member) / Yu, Hongbin (Committee member) / Menéndez, Jose (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Created2013
Description
Semiconductor nanolasers, as a frontier subject has drawn a great deal of attention over the past decade. Semiconductor nanolasers are compatible with on-chip integrations towards the ultimate realization of photonic integrated circuits. However, innovative approaches are strongly required to overcome the limitation of lattice-mismatch issues. In this dissertation, two alternative approaches are employed to overcome the lattice-mismatch issues. i) By taking advantage of nanowires or nanobelts techniques, flexibility in bandgap engineering has been greatly expanded, resulting in the nanolasers with wide wavelength coverage and tunability. Simultaneous two-color lasing in green and red is firstly achieved from monolithic cadmium sulfide selenide nanosheets. The wavelength separation is up to 97 nm at room temperature, larger than the gain bandwidth of a single semiconductor material in the visible wavelength range. The strategies adopted for two-color lasers eventually leads to the realization of simultaneous red, green and blue lasing and white lasing from a single zinc cadmium sulfide selenide nanosheet with color tunability in the full visible range, making a major milestone in the ultimate solution of laser illumination and laser display. In addition, with the help of nanowire techniques, material emission has been extended to mid-infrared range, enabling lasing at ~3µm from single lead sulfide subwavelength wires at 180 K. The cavity volume of the subwavelength laser is down to 0.44 λ3 and the wavelength tuning range is over 270 nm through the thermo-optic mechanism, exhibiting considerable potentials for on-chip applications in mid-infrared wavelength ranges. ii) By taking advantage of membrane transfer techniques, heterogeneous integration of compound semiconductor and waveguide material becomes possible, enabling the successful fabrication of membrane based nano-ring lasers on a dielectric substrate. Thin membranes with total thickness of ~200nm are first released from the original growth substrate and then transferred onto a receiving substrate through a generally applicable membrane transfer method. Nano-ring arrays are then defined by photolithography with an individual radius of 750 nm and a radial thickness of 400-500 nm. As a result, single mode lasing is achieved on individual nano-ring lasers at ~980 nm with cavity volumes down to 0.24 λ3, providing a general avenue for future heterogeneous integration of nanolasers on silicon substrates.
ContributorsFan, Fan (Author) / Ning, Cun-Zheng (Thesis advisor) / Balanis, Constantine A (Committee member) / Palais, Joseph C. (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2016
Description
The ability of a single monolithic semiconductor structure to emit or lase in a broad spectrum range is of great importance for many applications such as solid-state lighting and multi-spectrum detection. But spectral range of a laser or light-emitting diode made of a given semiconductor is typically limited by its emission or gain bandwidth. Due to lattice mismatch, it is typically difficult to grow thin film or bulk materials with very different bandgaps in a monolithic fashion. But nanomaterials such as nanowires, nanobelts, nanosheets provide a unique opportunity. Here we report our experimental results demonstrating simultaneous lasing in two visible colors at 526 and 623 nm from a single CdSSe heterostructure nanosheet at room temperature. The 97 nm wavelength separation of the two colors is significantly larger than the gain bandwidth of a typical single II-VI semiconductor material. Such lasing and light emission in a wide spectrum range from a single monolithic structure will have important applications mentioned above.
ContributorsFan, Fan (Author) / Liu, Zicheng (Author) / Yin, Leijun (Author) / Nichols, Patricia L. (Author) / Ning, H. (Author) / Turkdogan, Sunay (Author) / Ning, Cun-Zheng (Author) / Ira A. Fulton Schools of Engineering (Contributor)
Created2013-10-28
ContributorsLi, Jing-Jing (Author) / Yin, Leijun (Author) / Johnson, Shane R. (Author) / Skromme, B. J. (Author) / Wang, Shumin (Author) / Liu, Xinyu (Author) / Ding, Ding (Author) / Ning, Cun-Zheng (Author) / Furdyna, Jacek K. (Author) / Zhang, Yong-Hang (Author)
Created2012