Matching Items (24)
Description
This dissertation explores thermal effects and electrical characteristics in metal-oxide-semiconductor field effect transistor (MOSFET) devices and circuits using a multiscale dual-carrier approach. Simulating electron and hole transport with carrier-phonon interactions for thermal transport allows for the study of complementary logic circuits with device level accuracy in electrical characteristics and thermal effects. The electrical model is comprised of an ensemble Monte Carlo solution to the Boltzmann Transport Equation coupled with an iterative solution to two-dimensional (2D) Poisson’s equation. The thermal model solves the energy balance equations accounting for carrier-phonon and phonon-phonon interactions. Modeling of circuit behavior uses parametric iteration to ensure current and voltage continuity. This allows for modeling of device behavior, analyzing circuit performance, and understanding thermal effects.
The coupled electro-thermal approach, initially developed for individual n-channel MOSFET (NMOS) devices, now allows multiple devices in tandem providing a platform for better comparison with heater-sensor experiments. The latest electro-thermal solver allows simulation of multiple NMOS and p-channel MOSFET (PMOS) devices, providing a platform for the study of complementary MOSFET (CMOS) circuit behavior. Modeling PMOS devices necessitates the inclusion of hole transport and hole-phonon interactions. The analysis of CMOS circuits uses the electro-thermal device simulation methodology alongside parametric iteration to ensure current continuity. Simulating a CMOS inverter and analyzing the extracted voltage transfer characteristics verifies the efficacy of this methodology. This work demonstrates the effectiveness of the dual-carrier electro-thermal solver in simulating thermal effects in CMOS circuits.
The coupled electro-thermal approach, initially developed for individual n-channel MOSFET (NMOS) devices, now allows multiple devices in tandem providing a platform for better comparison with heater-sensor experiments. The latest electro-thermal solver allows simulation of multiple NMOS and p-channel MOSFET (PMOS) devices, providing a platform for the study of complementary MOSFET (CMOS) circuit behavior. Modeling PMOS devices necessitates the inclusion of hole transport and hole-phonon interactions. The analysis of CMOS circuits uses the electro-thermal device simulation methodology alongside parametric iteration to ensure current continuity. Simulating a CMOS inverter and analyzing the extracted voltage transfer characteristics verifies the efficacy of this methodology. This work demonstrates the effectiveness of the dual-carrier electro-thermal solver in simulating thermal effects in CMOS circuits.
ContributorsDaugherty, Robin (Author) / Vasileska, Dragica (Thesis advisor) / Aberle, James T., 1961- (Committee member) / Ferry, David (Committee member) / Goodnick, Stephen (Committee member) / Arizona State University (Publisher)
Created2019
Description
We studied left ventricular flow patterns for a range of rotational orientations of a bileaflet mechanical heart valve (MHV) implanted in the mitral position of an elastic model of a beating left ventricle (LV). The valve was rotated through 3 angular positions (0, 45, and 90 degrees) about the LV long axis. Ultrasound scans of the elastic LV were obtained in four apical 2-dimensional (2D) imaging projections, each with 45 degrees of separation. Particle imaging velocimetry was performed during the diastolic period to quantify the in-plane velocity field obtained by computer tracking of diluted microbubbles in the acquired ultrasound projections. The resulting velocity field, vorticity, and shear stresses were statistically significantly altered by angular positioning of the mechanical valve, although the results did not show any specific trend with the valve angular position and were highly dependent on the orientation of the imaging plane with respect to the valve. We conclude that bileaflet MHV orientation influences hemodynamics of LV filling. However, determination of ‘optimal’ valve orientation cannot be made without measurement techniques that account for the highly 3-dimensional (3D) intraventricular flow.
ContributorsWesterdale, John (Author) / Adrian, Ronald (Author) / Squires, Kyle (Author) / Chaliki, Hari (Author) / Belohlavek, Marek (Author) / Ira A. Fulton Schools of Engineering (Contributor) / School for the Engineering of Matter, Transport and Energy (Contributor)
Created2015-06-26
Description
Electricity plays a special role in our lives and life. The dynamics of electrons allow light to flow through a vacuum. The equations of electron dynamics are nearly exact and apply from nuclear particles to stars. These Maxwell equations include a special term, the displacement current (of a vacuum). The displacement current allows electrical signals to propagate through space. Displacement current guarantees that current is exactly conserved from inside atoms to between stars, as long as current is defined as the entire source of the curl of the magnetic field, as Maxwell did.We show that the Bohm formulation of quantum mechanics allows the easy definition of the total current, and its conservation, without the dificulties implicit in the orthodox quantum theory. The orthodox theory neglects the reality of magnitudes, like the currents, during times that they are not being explicitly measured.We show how conservation of current can be derived without mention of the polarization or dielectric properties of matter. We point out that displacement current is handled correctly in electrical engineering by ‘stray capacitances’, although it is rarely discussed explicitly. Matter does not behave as physicists of the 1800’s thought it did. They could only measure on a time scale of seconds and tried to explain dielectric properties and polarization with a single dielectric constant, a real positive number independent of everything. Matter and thus charge moves in enormously complicated ways that cannot be described by a single dielectric constant,when studied on time scales important today for electronic technology and molecular biology. When classical theories could not explain complex charge movements, constants in equations were allowed to vary in solutions of those equations, in a way not justified by mathematics, with predictable consequences. Life occurs in ionic solutions where charge is moved by forces not mentioned or described in the Maxwell equations, like convection and diffusion. These movements and forces produce crucial currents that cannot be described as classical conduction or classical polarization. Derivations of conservation of current involve oversimplified treatments of dielectrics and polarization in nearly every textbook. Because real dielectrics do not behave in that simple way-not even approximately-classical derivations of conservation of current are often distrusted or even ignored. We show that current is conserved inside atoms. We show that current is conserved exactly in any material no matter how complex are the properties of dielectric, polarization, or conduction currents. Electricity has a special role because conservation of current is a universal law.Most models of chemical reactions do not conserve current and need to be changed to do so. On the macroscopic scale of life, conservation of current necessarily links far spread boundaries to each other, correlating inputs and outputs, and thereby creating devices.We suspect that correlations created by displacement current link all scales and allow atoms to control the machines and organisms of life. Conservation of current has a special role in our lives and life, as well as in physics. We believe models, simulations, and computations should conserve current on all scales, as accurately as possible, because physics conserves current that way. We believe models will be much more successful if they conserve current at every level of resolution, the way physics does.We surely need successful models as we try to control macroscopic functions by atomic interventions, in technology, life, and medicine. Maxwell’s displacement current lets us see stars. We hope it will help us see how atoms control life.
ContributorsEisenberg, Bob (Author) / Oriols, Xavier (Author) / Ferry, David (Author) / Ira A. Fulton Schools of Engineering (Contributor) / School of Electrical, Computer and Energy Engineering (Contributor)
Created2017-10-28
Description
Self-heating degrades the performance of devices in advanced technology nodes. Understanding of self-heating effects is necessary to improve device performance. Heat generation in these devices occurs at nanometer scales but heat transfer is a microscopic phenomena. Hence a multi-scale modeling approach is required to study the self-heating effects. A state of the art Monte Carlo device simulator and the commercially available Giga 3D tool from Silvaco are used in our study to understand the self heating effects. The Monte Carlo device simulator solves the electrical transport and heat generation for nanometer length scales accurately while the Giga 3D tool solves for thermal transport over micrometer length scales. The approach used is to understand the self-heating effects in a test device structure, composed of a heater and a sensor, fabricated and characterized by IMEC. The heater is the Device Under Test(DUT) and the sensor is used as a probe. Therefore, the heater is biased in the saturation region and the sensor is biased in the sub-threshold regime. Both are planar MOSFETs of gate length equal to 22 nm. The simulated I-V characteristics of the sensor match with the experimental behavior at lower applied drain voltages but differ at higher applied biases.
The self-heating model assumes that the heat transport within the device follows Energy Balance model which may not be accurate. To properly study heat transport within the device, a state of the art Monte Carlo device simulator is necessary. In this regard, the Phonon Monte Carlo(PMC) simulator is developed. Phonons are treated as quasi particles that carry heat energy. Like electrons, phonons obey a corresponding Boltzmann Transport Equation(BTE) which can be used to study their transport. The direct solution of the BTE for phonons is possible, but it is difficult to incorporate all scattering mechanisms. In the Monte Carlo based solution method, it is easier to incorporate different relevant scattering mechanisms. Although the Monte Carlo method is computationally intensive, it provides good insight into the physical nature of the transport problem. Hence Monte Carlo based techniques are used in the present work for studying phonon transport. Monte Carlo simulations require calculating the scattering rates for different scattering processes. In the present work, scattering rates for three phonon interactions are calculated from different approaches presented in the literature. Optical phonons are also included in the transport problem. Finally, the temperature dependence of thermal conductivity for silicon is calculated in the range from 100K to 900K and is compared to available experimental data.
The self-heating model assumes that the heat transport within the device follows Energy Balance model which may not be accurate. To properly study heat transport within the device, a state of the art Monte Carlo device simulator is necessary. In this regard, the Phonon Monte Carlo(PMC) simulator is developed. Phonons are treated as quasi particles that carry heat energy. Like electrons, phonons obey a corresponding Boltzmann Transport Equation(BTE) which can be used to study their transport. The direct solution of the BTE for phonons is possible, but it is difficult to incorporate all scattering mechanisms. In the Monte Carlo based solution method, it is easier to incorporate different relevant scattering mechanisms. Although the Monte Carlo method is computationally intensive, it provides good insight into the physical nature of the transport problem. Hence Monte Carlo based techniques are used in the present work for studying phonon transport. Monte Carlo simulations require calculating the scattering rates for different scattering processes. In the present work, scattering rates for three phonon interactions are calculated from different approaches presented in the literature. Optical phonons are also included in the transport problem. Finally, the temperature dependence of thermal conductivity for silicon is calculated in the range from 100K to 900K and is compared to available experimental data.
ContributorsShaik, Abdul Rawoof (Author) / Vasileska, Dragica (Thesis advisor) / Ferry, David (Committee member) / Goodnick, Stephan (Committee member) / Arizona State University (Publisher)
Created2016