Matching Items (412)
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The application of Toni Morrison’s Beloved as a lens through which one can analyze intergenerational trauma on an individual and communal level results in a blueprint towards a remedial process. The characters and their experiences in her novel are representative of a myriad of ways in which trauma is manifested.

The application of Toni Morrison’s Beloved as a lens through which one can analyze intergenerational trauma on an individual and communal level results in a blueprint towards a remedial process. The characters and their experiences in her novel are representative of a myriad of ways in which trauma is manifested. I have broken down the concept of intergenerational trauma into the idea that it can be seen as the state where one is both simultaneously “falling” and “fallen” at the same time. Used here, the term “falling” refers to the consistent, individual trauma that one is experiencing. On the other hand, the term “fallen” refers to the trauma that a community as a whole has experienced and internalized. This framework that I establish based off of Beloved is a launching point for the conversation surrounding the topic of remedial actions in relation to intergenerational trauma that resulted from slavery. Using it as a basis of knowledge allows one to truly gather the weight of the situation regarding trauma postbellum. Considering the current climate surrounding any meaningful dialogue, knowledge is one of the most important aspects. Along with the concepts of “falling”/”fallen,” I also coined the term productive memory, which refers to the act of confrontation as well as the remembering of intergenerational trauma. The use of productive memory is imperative in addressing the prior ideas presented regarding intergenerational trauma and the possible pathways to move forward.

ContributorsCampbell, Hugh Fitz (Author) / Soares, Rebecca (Thesis director) / Agruss, David (Committee member) / School of Politics and Global Studies (Contributor) / Economics Program in CLAS (Contributor) / Barrett, The Honors College (Contributor)
Created2021-05
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The field of behavioral economics explores the ways in which individuals make choices under uncertainty, in part, by examining the role that risk attitudes play in a person’s efforts to maximize their own utility. This thesis aims to contribute to the body of economic literature regarding risk attitudes by first

The field of behavioral economics explores the ways in which individuals make choices under uncertainty, in part, by examining the role that risk attitudes play in a person’s efforts to maximize their own utility. This thesis aims to contribute to the body of economic literature regarding risk attitudes by first evaluating the traditional economic method for discerning risk coefficients by examining whether students provide reasonable answers to lottery questions. Second, the answers of reasonable respondents are subject to our economic model using the CRRA utility function in which Python code is used to make predictions of the risk coefficients of respondents via a two-step regression procedure. Lastly, the degree to which the economic model provides a good fit for the lottery answers given by reasonable respondents is discerned. The most notable findings of the study are as follows. College students had extreme difficulty in understanding lottery questions of this sort, with Medical and Life Science majors struggling significantly more than both Business and Engineering majors. Additionally, gender was correlated with estimated risk coefficients, with females being more risk-loving relative to males. Lastly, in regards to the model’s goodness of fit when evaluating potential losses, the expected utility model involving choice under uncertainty was consistent with the behavior of progressives and moderates but inconsistent with the behavior of conservatives.

ContributorsSansone, Morgan Marie (Author) / Leiva Bertran, Fernando (Thesis director) / Vereshchagina, Galina (Committee member) / Economics Program in CLAS (Contributor) / School of Politics and Global Studies (Contributor) / Sandra Day O'Connor College of Law (Contributor) / Barrett, The Honors College (Contributor)
Created2021-05
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An X class solar flare has the potential to remove our satellites from orbit, permanently deactivate our main forms of communication and bring humanity into a technology-free age. By using Geant4, it is possible to simulate several layers of the Earth's atmosphere and send a simulated solar flare and coronal

An X class solar flare has the potential to remove our satellites from orbit, permanently deactivate our main forms of communication and bring humanity into a technology-free age. By using Geant4, it is possible to simulate several layers of the Earth's atmosphere and send a simulated solar flare and coronal mass ejection. This thesis will show the interaction of photons and protons of various energies with several kilometers of atmosphere.

ContributorsDolghier, Kristian Adrian (Author) / Shovkovy, Igor (Thesis director) / Steinkamp, Brian (Committee member) / Economics Program in CLAS (Contributor) / College of Integrative Sciences and Arts (Contributor, Contributor) / Barrett, The Honors College (Contributor)
Created2021-05
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2D fetal echocardiography (ECHO) can be used for monitoring heart development in utero. This study’s purpose is to empirically model normal fetal heart growth and function changes during development by ECHO and compare these to fetuses diagnosed with and without cardiomyopathy with diabetic mothers. There are existing mathematical models describing

2D fetal echocardiography (ECHO) can be used for monitoring heart development in utero. This study’s purpose is to empirically model normal fetal heart growth and function changes during development by ECHO and compare these to fetuses diagnosed with and without cardiomyopathy with diabetic mothers. There are existing mathematical models describing fetal heart development but they warrant revalidation and adjustment. 377 normal fetuses with healthy mothers, 98 normal fetuses with diabetic mothers, and 37 fetuses with cardiomyopathy and diabetic mothers had their cardiac structural dimensions, cardiothoracic ratio, valve flow velocities, and heart rates measured by fetal ECHO in a retrospective chart review. Cardiac features were fitted to linear functions, with respect to gestational age, femur length, head circumference, and biparietal diameter and z-scores were created to model normal fetal growth for all parameters. These z-scores were used to assess what metrics had no difference in means between the normal fetuses of both healthy and diabetic mothers but differed from those diagnosed with cardiomyopathy. It was found that functional metrics like mitral and tricuspid E wave and pulmonary velocity could be important predictors for cardiomyopathy when fitted by gestational age, femur length, head circumference, and biparietal diameter. Additionally, aortic and tricuspid annulus diameters when fitted to estimated gestational age showed potential to be predictors for fetal cardiomyopathy. While the metrics overlapped over their full range, combining them together may have the potential for predicting cardiomyopathy in utero. Future directions of this study will explore creating a classifier model that can predict cardiomyopathy using the metrics assessed in this study.

ContributorsMishra, Shambhavi (Co-author) / Numani, Asfia (Co-author) / Sweazea, Karen (Thesis director) / Plasencia, Jonathan (Committee member) / Economics Program in CLAS (Contributor) / School of Life Sciences (Contributor) / Barrett, The Honors College (Contributor)
Created2021-05
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Description
CMOS technology is expected to enter the 10nm regime for future integrated circuits (IC). Such aggressive scaling leads to vastly increased variability, posing a grand challenge to robust IC design. Variations in CMOS are often divided into two types: intrinsic variations and process-induced variations. Intrinsic variations are limited by fundamental

CMOS technology is expected to enter the 10nm regime for future integrated circuits (IC). Such aggressive scaling leads to vastly increased variability, posing a grand challenge to robust IC design. Variations in CMOS are often divided into two types: intrinsic variations and process-induced variations. Intrinsic variations are limited by fundamental physics. They are inherent to CMOS structure, considered as one of the ultimate barriers to the continual scaling of CMOS devices. In this work the three primary intrinsic variations sources are studied, including random dopant fluctuation (RDF), line-edge roughness (LER) and oxide thickness fluctuation (OTF). The research is focused on the modeling and simulation of those variations and their scaling trends. Besides the three variations, a time dependent variation source, Random Telegraph Noise (RTN) is also studied. Different from the other three variations, RTN does not contribute much to the total variation amount, but aggregate the worst case of Vth variations in CMOS. In this work a TCAD based simulation study on RTN is presented, and a new SPICE based simulation method for RTN is proposed for time domain circuit analysis. Process-induced variations arise from the imperfection in silicon fabrication, and vary from foundries to foundries. In this work the layout dependent Vth shift due to Rapid-Thermal Annealing (RTA) are investigated. In this work, we develop joint thermal/TCAD simulation and compact modeling tools to analyze performance variability under various layout pattern densities and RTA conditions. Moreover, we propose a suite of compact models that bridge the underlying RTA process with device parameter change for efficient design optimization.
ContributorsYe, Yun, Ph.D (Author) / Cao, Yu (Thesis advisor) / Yu, Hongbin (Committee member) / Song, Hongjiang (Committee member) / Clark, Lawrence (Committee member) / Arizona State University (Publisher)
Created2011
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Description
Semiconductor nanowires (NWs) are one dimensional materials and have size quantization effect when the diameter is sufficiently small. They can serve as optical wave guides along the length direction and contain optically active gain at the same time. Due to these unique properties, NWs are now very promising and extensively

Semiconductor nanowires (NWs) are one dimensional materials and have size quantization effect when the diameter is sufficiently small. They can serve as optical wave guides along the length direction and contain optically active gain at the same time. Due to these unique properties, NWs are now very promising and extensively studied for nanoscale optoelectronic applications. A systematic and comprehensive optical and microstructural study of several important infrared semiconductor NWs is presented in this thesis, which includes InAs, PbS, InGaAs, erbium chloride silicate and erbium silicate. Micro-photoluminescence (PL) and transmission electron microscope (TEM) were utilized in conjunction to characterize the optical and microstructure of these wires. The focus of this thesis is on optical study of semiconductor NWs in the mid-infrared wavelengths. First, differently structured InAs NWs grown using various methods were characterized and compared. Three main PL peaks which are below, near and above InAs bandgap, respectively, were observed. The octadecylthiol self-assembled monolayer was employed to passivate the surface of InAs NWs to eliminate or reduce the effects of the surface states. The band-edge emission from wurtzite-structured NWs was completely recovered after passivatoin. The passivated NWs showed very good stability in air and under heat. In the second part, mid-infrared optical study was conducted on PbS wires of subwavelength diameter and lasing was demonstrated under optical pumping. The PbS wires were grown on Si substrate using chemical vapor deposition and have a rock-salt cubic structure. Single-mode lasing at the wavelength of ~3000-4000 nm was obtained from single as-grown PbS wire up to the temperature of 115 K. PL characterization was also utilized to demonstrate the highest crystallinity of the vertical arrays of InP and InGaAs/InP composition-graded heterostructure NWs made by a top-down fabrication method. TEM-related measurements were performed to study the crystal structures and elemental compositions of the Er-compound core-shell NWs. The core-shell NWs consist of an orthorhombic-structured erbium chloride silicate shell and a cubic-structured silicon core. These NWs provide unique Si-compatible materials with emission at 1530 nm for optical communications and solid state lasers.
ContributorsSun, Minghua (Author) / Ning, Cun-Zheng (Thesis advisor) / Yu, Hongbin (Committee member) / Carpenter, Ray W. (Committee member) / Johnson, Shane (Committee member) / Arizona State University (Publisher)
Created2011
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Description
Semiconductor devices are generally analyzed with relatively simple equations or with detailed computer simulations. Most text-books use these simple equations and show device diagrams that are frequently very simplified and occasionally incorrect. For example, the carrier densities near the pinch-off point in MOSFETs and JFETs and the minority carrier density

Semiconductor devices are generally analyzed with relatively simple equations or with detailed computer simulations. Most text-books use these simple equations and show device diagrams that are frequently very simplified and occasionally incorrect. For example, the carrier densities near the pinch-off point in MOSFETs and JFETs and the minority carrier density in the base near the reverse-biased base-collector junction are frequently assumed to be zero or near zero. Also the channel thickness at the pinch-off point is often shown to approach zero. None of these assumptions can be correct. The research in thesis addresses these points. I simulated the carrier densities, potentials, electric fields etc. of MOSFETs, BJTs and JFETs at and near the pinch-off regions to determine exactly what happens there. I also simulated the behavior of the quasi-Fermi levels. For MOSFETs, the channel thickness expands slightly before the pinch-off point and then spreads out quickly in a triangular shape and the space-charge region under the channel actually shrinks as the potential increases from source to drain. For BJTs, with collector-base junction reverse biased, most minority carriers diffuse through the base from emitter to collector very fast, but the minority carrier concentration at the collector-base space-charge region is not zero. For JFETs, the boundaries of the space-charge region are difficult to determine, the channel does not disappear after pinch off, the shape of channel is always tapered, and the carrier concentration in the channel decreases progressively. After simulating traditional sized devices, I also simulated typical nano-scaled devices and show that they behave similarly to large devices. These simulation results provide a more complete understanding of device physics and device operation in those regions usually not addressed in semiconductor device physics books.
ContributorsYang, Xuan (Author) / Schroder, Dieter K. (Thesis advisor) / Vasileska, Dragica (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2011
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With increasing demand for System on Chip (SoC) and System in Package (SiP) design in computer and communication technologies, integrated inductor which is an essential passive component has been widely used in numerous integrated circuits (ICs) such as in voltage regulators and RF circuits. In this work, soft ferromagnetic core

With increasing demand for System on Chip (SoC) and System in Package (SiP) design in computer and communication technologies, integrated inductor which is an essential passive component has been widely used in numerous integrated circuits (ICs) such as in voltage regulators and RF circuits. In this work, soft ferromagnetic core material, amorphous Co-Zr-Ta-B, was incorporated into on-chip and in-package inductors in order to scale down inductors and improve inductors performance in both inductance density and quality factor. With two layers of 500 nm Co-Zr-Ta-B films a 3.5X increase in inductance and a 3.9X increase in quality factor over inductors without magnetic films were measured at frequencies as high as 1 GHz. By laminating technology, up to 9.1X increase in inductance and more than 5X increase in quality factor (Q) were obtained from stripline inductors incorporated with 50 nm by 10 laminated films with a peak Q at 300 MHz. It was also demonstrated that this peak Q can be pushed towards high frequency as far as 1GHz by a combination of patterning magnetic films into fine bars and laminations. The role of magnetic vias in magnetic flux and eddy current control was investigated by both simulation and experiment using different patterning techniques and by altering the magnetic via width. Finger-shaped magnetic vias were designed and integrated into on-chip RF inductors improving the frequency of peak quality factor from 400 MHz to 800 MHz without sacrificing inductance enhancement. Eddy current and magnetic flux density in different areas of magnetic vias were analyzed by HFSS 3D EM simulation. With optimized magnetic vias, high frequency response of up to 2 GHz was achieved. Furthermore, the effect of applied magnetic field on on-chip inductors was investigated for high power applications. It was observed that as applied magnetic field along the hard axis (HA) increases, inductance maintains similar value initially at low fields, but decreases at larger fields until the magnetic films become saturated. The high frequency quality factor showed an opposite trend which is correlated to the reduction of ferromagnetic resonant absorption in the magnetic film. In addition, experiments showed that this field-dependent inductance change varied with different patterned magnetic film structures, including bars/slots and fingers structures. Magnetic properties of Co-Zr-Ta-B films on standard organic package substrates including ABF and polyimide were also characterized. Effects of substrate roughness and stress were analyzed and simulated which provide strategies for integrating Co-Zr-Ta-B into package inductors and improving inductors performance. Stripline and spiral inductors with Co-Zr-Ta-B films were fabricated on both ABF and polyimide substrates. Maximum 90% inductance increase in hundreds MHz frequency range were achieved in stripline inductors which are suitable for power delivery applications. Spiral inductors with Co-Zr-Ta-B films showed 18% inductance increase with quality factor of 4 at frequency up to 3 GHz.
ContributorsWu, Hao (Author) / Yu, Hongbin (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Cao, Yu (Committee member) / Chickamenahalli, Shamala (Committee member) / Arizona State University (Publisher)
Created2013
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The criminal justice system in the United States has recently come under intense scrutiny. To understand and critique the system it is important to understand the broader history and processes within the system. Looking specifically at the practice of juvenile detention, we see how the system developed parallel to the

The criminal justice system in the United States has recently come under intense scrutiny. To understand and critique the system it is important to understand the broader history and processes within the system. Looking specifically at the practice of juvenile detention, we see how the system developed parallel to the cruel practices applied to adults as punishment. Juvenile detention centers were modeled on adult prisons, both reflecting nineteenth-century ideas of redemptive suffering. The consistently coercive and oppressive features of the juvenile justice system also become apparent, when looking at the system through a historic lens. In contemporary juvenile detention centers, remnants of religious influence remain in the form of prison ministry programs. Throughout an examination of the historic and modern influence of evangelical Protestantism in prisons, the vulnerability of the individuals in these programs become apparent, as do the inequities within the system.

ContributorsMelnyk, Olena Anna (Author) / Sarat, Leah (Thesis director) / Wells, Cornelia (Committee member) / Historical, Philosophical & Religious Studies (Contributor, Contributor) / Historical, Philosophical & Religious Studies, Sch (Contributor, Contributor) / Economics Program in CLAS (Contributor) / Barrett, The Honors College (Contributor)
Created2021-05
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Zinc oxide (ZnO), a naturally n-type semiconductor has been identified as a promising candidate to replace indium tin oxide (ITO) as the transparent electrode in solar cells, because of its wide bandgap (3.37 eV), abundant source materials and suitable refractive index (2.0 at 600 nm). Spray deposition is a convenient

Zinc oxide (ZnO), a naturally n-type semiconductor has been identified as a promising candidate to replace indium tin oxide (ITO) as the transparent electrode in solar cells, because of its wide bandgap (3.37 eV), abundant source materials and suitable refractive index (2.0 at 600 nm). Spray deposition is a convenient and low cost technique for large area and uniform deposition of semiconductor thin films. In particular, it provides an easier way to dope the film by simply adding the dopant precursor into the starting solution. In order to reduce the resistivity of undoped ZnO, many works have been done by doping in the ZnO with either group IIIA elements or VIIA elements using spray pyrolysis. However, the resistivity is still too high to meet TCO's resistivity requirement. In the present work, a novel co-spray deposition technique is developed to bypass a fundamental limitation in the conventional spray deposition technique, i.e. the deposition of metal oxides from incompatible precursors in the starting solution. With this technique, ZnO films codoped with one cationic dopant, Al, Cr, or Fe, and an anionic dopant, F, have been successfully synthesized, in which F is incompatible with all these three cationic dopants. Two starting solutions were prepared and co-sprayed through two separate spray heads. One solution contained only the F precursor, NH 4F. The second solution contained the Zn and one cationic dopant precursors, Zn(O 2CCH 3) 2 and AlCl 3, CrCl 3, or FeCl 3. The deposition was carried out at 500 &degC; on soda-lime glass in air. Compared to singly-doped ZnO thin films, codoped ZnO samples showed better electrical properties. Besides, a minimum sheet resistance, 55.4 Ω/sq, was obtained for Al and F codoped ZnO films after vacuum annealing at 400 &degC;, which was lower than singly-doped ZnO with either Al or F. The transmittance for the Al and F codoped ZnO samples was above 90% in the visible range. This co-spray deposition technique provides a simple and cost-effective way to synthesize metal oxides from incompatible precursors with improved properties.
ContributorsZhou, Bin (Author) / Tao, Meng (Thesis advisor) / Goryll, Michael (Committee member) / Vasileska, Dragica (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2013