Matching Items (997)
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In this study, the Arizona State University Mathematics and Science Teaching Fellows 2010 program was analyzed qualitatively from start to finish to determine the impact of the research experience on teachers in the classroom. The sample for the study was the 2010 cohort of eight high school science teachers. Erickson's

In this study, the Arizona State University Mathematics and Science Teaching Fellows 2010 program was analyzed qualitatively from start to finish to determine the impact of the research experience on teachers in the classroom. The sample for the study was the 2010 cohort of eight high school science teachers. Erickson's (1986) interpretive, participant observational fieldwork method was used to report data by means of detailed descriptions of the research experience and classroom implementation. Data was collected from teacher documents, interviews, and observations. The findings revealed various factors that were responsible for an ineffective implementation of the research experience in the classroom such as research experience, curriculum support, availability of resources, and school curriculum. Implications and recommendations for future programs are discussed in the study.
ContributorsSen, Tapati (Author) / Baker, Dale (Thesis advisor) / Culbertson, Robert (Committee member) / Margolis, Eric (Committee member) / Arizona State University (Publisher)
Created2012
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Nitride semiconductors have wide applications in electronics and optoelectronics technologies. Understanding the nature of the optical recombination process and its effects on luminescence efficiency is important for the development of novel devices. This dissertation deals with the optical properties of nitride semiconductors, including GaN epitaxial layers and more complex heterostructures.

Nitride semiconductors have wide applications in electronics and optoelectronics technologies. Understanding the nature of the optical recombination process and its effects on luminescence efficiency is important for the development of novel devices. This dissertation deals with the optical properties of nitride semiconductors, including GaN epitaxial layers and more complex heterostructures. The emission characteristics are examined by cathodoluminescence spectroscopy and imaging, and are correlated with the structural and electrical properties studied by transmission electron microscopy and electron holography. Four major areas are covered in this dissertation, which are described next. The effect of strain on the emission characteristics in wurtzite GaN has been studied. The values of the residual strain in GaN epilayers with different dislocation densities are determined by x-ray diffraction, and the relationship between exciton emission energy and the in-plane residual strain is demonstrated. It shows that the emission energy increases withthe magnitude of the in-plane compressive strain. The temperature dependence of the emission characteristics in cubic GaN has been studied. It is observed that the exciton emission and donor-acceptor pair recombination behave differently with temperature. The donor-bound exciton binding energy has been measured to be 13 meV from the temperature dependence of the emission spectrum. It is also found that the ionization energies for both acceptors and donors are smaller in cubic compared with hexagonal structures, which should contribute to higher doping efficiencies. A comprehensive study on the structural and optical properties is presented for InGaN/GaN quantum wells emitting in the blue, green, and yellow regions of the electromagnetic spectrum. Transmission electron microscopy images indicate the presence of indium inhomogeneties which should be responsible for carrier localization. The temperature dependence of emission luminescence shows that the carrier localization effects become more significant with increasing emission wavelength. On the other hand, the effect of non-radiative recombination on luminescence efficiency also varies with the emission wavelength. The fast increase of the non-radiative recombination rate with temperature in the green emitting QWs contributes to the lower efficiency compared with the blue emitting QWs. The possible saturation of non-radiative recombination above 100 K may explain the unexpected high emission efficiency for the yellow emitting QWs Finally, the effects of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells emitting in visible spectral regions have been studied. A significant improvement of the emission efficiency is observed, which is associated with a blue shift in the emission energy, a reduced recombination lifetime, an increased spatial homogeneity in the luminescence, and a weaker internal field across the quantum wells. These are explained by a partial strain relaxation introduced by the InGaN underlayer, which is measured by reciprocal space mapping of the x-ray diffraction intensity.
ContributorsLi, Di (Author) / Ponce, Fernando (Thesis advisor) / Culbertson, Robert (Committee member) / Yu, Hongbin (Committee member) / Shumway, John (Committee member) / Menéndez, Jose (Committee member) / Arizona State University (Publisher)
Created2012
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In this dissertation, combined photo-induced and thermionic electron emission from low work function diamond films is studied through low energy electron spectroscopy analysis and other associated techniques. Nitrogen-doped, hydrogen-terminated diamond films prepared by the microwave plasma chemical vapor deposition method have been the most focused material. The theme of this

In this dissertation, combined photo-induced and thermionic electron emission from low work function diamond films is studied through low energy electron spectroscopy analysis and other associated techniques. Nitrogen-doped, hydrogen-terminated diamond films prepared by the microwave plasma chemical vapor deposition method have been the most focused material. The theme of this research is represented by four interrelated issues. (1) An in-depth study describes combined photo-induced and thermionic emission from nitrogen-doped diamond films on molybdenum substrates, which were illuminated with visible light photons, and the electron emission spectra were recorded as a function of temperature. The diamond films displayed significant emissivity with a low work function of ~ 1.5 eV. The results indicate that these diamond emitters can be applied in combined solar and thermal energy conversion. (2) The nitrogen-doped diamond was further investigated to understand the physical mechanism and material-related properties that enable the combined electron emission. Through analysis of the spectroscopy, optical absorbance and photoelectron microscopy results from sample sets prepared with different configurations, it was deduced that the photo-induced electron generation involves both the ultra-nanocrystalline diamond and the interface between the diamond film and metal substrate. (3) Based on results from the first two studies, possible photon-enhanced thermionic emission was examined from nitrogen-doped diamond films deposited on silicon substrates, which could provide the basis for a novel approach for concentrated solar energy conversion. A significant increase of emission intensity was observed at elevated temperatures, which was analyzed using computer-based modeling and a combination of different emission mechanisms. (4) In addition, the electronic structure of vanadium-oxide-terminated diamond surfaces was studied through in-situ photoemission spectroscopy. Thin layers of vanadium were deposited on oxygen-terminated diamond surfaces which led to oxide formation. After thermal annealing, a negative electron affinity was found on boron-doped diamond, while a positive electron affinity was found on nitrogen-doped diamond. A model based on the barrier at the diamond-oxide interface was employed to analyze the results. Based on results of this dissertation, applications of diamond-based energy conversion devices for combined solar- and thermal energy conversion are proposed.
ContributorsSun, Tianyin (Author) / Nemanich, Robert (Thesis advisor) / Ponce, Fernando (Committee member) / Peng, Xihong (Committee member) / Spence, John (Committee member) / Treacy, Michael (Committee member) / Arizona State University (Publisher)
Created2013
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Group III-nitride semiconductors have attracted much attention for applications on high brightness light-emitting diodes (LEDs) and laser diodes (LDs) operating in the visible and ultra-violet spectral range using indium gallium nitride in the active layer. However, the device efficiency in the green to red range is limited by quantum-confined Stark

Group III-nitride semiconductors have attracted much attention for applications on high brightness light-emitting diodes (LEDs) and laser diodes (LDs) operating in the visible and ultra-violet spectral range using indium gallium nitride in the active layer. However, the device efficiency in the green to red range is limited by quantum-confined Stark effects resulting from the lattice mismatch between GaN and InGaN. In this dissertation, the optical and micro-structural properties of GaN-based light emitting structures have been analyzed and correlated by utilizing cathodoluminescence and transmission electron microscopy techniques. In the first section, optimization of the design of GaN-based lasers diode structures is presented. The thermal strain present in the GaN underlayer grown on sapphire substrates causes a strain-induced wavelength shift. The insertion of an InGaN waveguide mitigates the mismatch strain at the interface between the InGaN quantum well and the GaN quantum barrier. The second section of the thesis presents a study of the characteristics of thick non-polar m-plane InGaN films and of LED structures containing InGaN quantum wells, which minimize polarization-related electric fields. It is found that in some cases the in-plane piezoelectric fields can still occur due to the existence of misfit dislocations which break the continuity of the film. In the final section, the optical and structural properties of InGaAlN quaternary alloys are analyzed and correlated. The composition of the components of the film is accurately determined by Rutherford backscattering spectroscopy.
ContributorsHuang, Yu (Author) / Ponce, Fernando A. (Thesis advisor) / Tsen, Kong-Thon (Committee member) / Treacy, Michael (Committee member) / Drucker, Jeffery (Committee member) / Culbertson, Robert (Committee member) / Arizona State University (Publisher)
Created2011
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The chemical sensitivity and spatial resolution of Raman spectroscopy, combined with the sensitivity of modern systems that can easily detect single atomic layers, have made this technique a preferred choice for the strain characterization of complex systems such as nanoscale complementary metal-oxide-semiconductor - CMOS - devices. A disadvantage of Raman

The chemical sensitivity and spatial resolution of Raman spectroscopy, combined with the sensitivity of modern systems that can easily detect single atomic layers, have made this technique a preferred choice for the strain characterization of complex systems such as nanoscale complementary metal-oxide-semiconductor - CMOS - devices. A disadvantage of Raman spectroscopy, however, is that the shifts associated with strain are not related to the geometrical deformations in any obvious way, so that careful calibrations are needed to determine the anharmonic coefficients (p, q and r) that relate strain to Raman shifts. A new set of measurements of the Raman shift in strained Ge films grown on relaxed SiGe buffer layers deposited on Si substrates is presented, and thereby, a new consistent set of values for the parameters p and q for Ge has been proposed. In this dissertation the study of the vibrational properties of Ge1-xSnx alloys has also been reported. The temperature dependence of the Raman spectrum of Ge-rich Ge1-x Snx and Ge1-x-ySi xSny alloys has been determined in the 10 K - 450 K range. The Raman line shift and width changes as a function of temperature are found to be virtually identical to those observed in bulk Ge. This result shows that the anharmonic decay process responsible for the temperature dependence is extremely robust against the alloy perturbation.
ContributorsBagchi, Sampriti (Author) / Menéndez, Jose (Thesis advisor) / Treacy, Michael (Committee member) / Ponce, Fernando (Committee member) / Tsen, Kong-Thon (Committee member) / Rez, Peter (Committee member) / Arizona State University (Publisher)
Created2011
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ABSTRACT Group III-nitride semiconductor materials have been commercially used in fabrication of light-emitting diodes (LEDs) and laser diodes (LDs) covering the spectral range from UV to visible and infrared, and exhibit unique properties suitable for modern optoelectronic applications. Great advances have recently happened in the research and development in high-power

ABSTRACT Group III-nitride semiconductor materials have been commercially used in fabrication of light-emitting diodes (LEDs) and laser diodes (LDs) covering the spectral range from UV to visible and infrared, and exhibit unique properties suitable for modern optoelectronic applications. Great advances have recently happened in the research and development in high-power and high-efficiency blue-green-white LEDs, blue LDs and other optoelectronic applications. However, there are still many unsolved challenges with these materials. In this dissertation, several issues concerning structural, electronic and optical properties of III-nitrides have been investigated using a combination of transmission electron microscopy (TEM), electron holography (EH) and cathodoluminescence (CL) techniques. First, a trend of indium chemical inhomogeneity has been found as the indium composition increases for the InGaN epitaxial layers grown by hydride vapor phase epitaxy. Second, different mechanisms contributing to the strain relaxation have been studied for non-polar InGaN epitaxial layers grown on zinc oxide (ZnO) substrate. Third, various structural morphologies of non-polar InGaN epitaxial layers grown on free-standing GaN substrate have been investigated. Fourth, the effect of the growth temperature on the performance of GaN lattice-matched InAlN electron blocking layers has been studied. Finally, the electronic and optical properties of GaN nanowires containing a AlN/GaN superlattice structure have been investigated showing relatively small internal electric field and superlattice- and defect-related emissions along the nanowires.
ContributorsSun, Kewei (Author) / Ponce, Fernando (Thesis advisor) / Smith, David (Committee member) / Treacy, Michael (Committee member) / Drucker, Jeffery (Committee member) / Schmidt, Kevin (Committee member) / Arizona State University (Publisher)
Created2011
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Observations of four times ionized iron and nickel (Fe V & Ni V) in the G191-B2B white dwarf spectrum have been used to test for variations in the fine structure constant, α, in the presence of strong gravitational fields. The laboratory wavelengths for these ions were thought to be the

Observations of four times ionized iron and nickel (Fe V & Ni V) in the G191-B2B white dwarf spectrum have been used to test for variations in the fine structure constant, α, in the presence of strong gravitational fields. The laboratory wavelengths for these ions were thought to be the cause of inconsistent conclusions regarding the
variation of α as observed through the white dwarf spectrum. This thesis presents 129 revised Fe V wavelengths (1200 Å to 1600 Å) and 161 revised Ni V wavelengths (1200 Å to 1400 Å) with uncertainties of approximately 3 mÅ. A systematic calibration error
is identified in the previous Ni V wavelengths and is corrected in this work. The evaluation of the fine structure variation is significantly improved with the results
found in this thesis.
ContributorsWard, Jacob Wolfgang (Author) / Treacy, Michael (Thesis director) / Alarcon, Ricardo (Committee member) / Nave, Gillian (Committee member) / Department of Physics (Contributor) / Computer Science and Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2016-05
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The OMFIT (One Modeling Framework for Integrated Tasks) modeling environment and the BRAINFUSE module have been deployed on the PPPL (Princeton Plasma Physics Laboratory) computing cluster with modifications that have rendered the application of artificial neural networks (NNs) to the TRANSP databases for the JET (Joint European Torus), TFTR (Tokamak

The OMFIT (One Modeling Framework for Integrated Tasks) modeling environment and the BRAINFUSE module have been deployed on the PPPL (Princeton Plasma Physics Laboratory) computing cluster with modifications that have rendered the application of artificial neural networks (NNs) to the TRANSP databases for the JET (Joint European Torus), TFTR (Tokamak Fusion Test Reactor), and NSTX (National Spherical Torus Experiment) devices possible through their use. This development has facilitated the investigation of NNs for predicting heat transport profiles in JET, TFTR, and NSTX, and has promoted additional investigations to discover how else NNs may be of use to scientists at PPPL. In applying NNs to the aforementioned devices for predicting heat transport, the primary goal of this endeavor is to reproduce the success shown in Meneghini et al. in using NNs for heat transport prediction in DIII-D. Being able to reproduce the results from is important because this in turn would provide scientists at PPPL with a quick and efficient toolset for reliably predicting heat transport profiles much faster than any existing computational methods allow; the progress towards this goal is outlined in this report, and potential additional applications of the NN framework are presented.
ContributorsLuna, Christopher Joseph (Author) / Tang, Wenbo (Thesis director) / Treacy, Michael (Committee member) / Orso, Meneghini (Committee member) / Barrett, The Honors College (Contributor) / School of Mathematical and Statistical Sciences (Contributor) / Department of Physics (Contributor)
Created2015-05
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One major issue that surgeons face during closed body cavity surgery is fogging of the lens surfaces. The cloudy and opaque lens surface caused by water vapor present in closed body cavities forces the surgeon to repeatedly remove the endoscope, wipe it, and reinsert it back into the patient. This

One major issue that surgeons face during closed body cavity surgery is fogging of the lens surfaces. The cloudy and opaque lens surface caused by water vapor present in closed body cavities forces the surgeon to repeatedly remove the endoscope, wipe it, and reinsert it back into the patient. This presents several risks such as increased surgery time, greater scarring, and an increased chance of infection. In order to address this issue, the development of the Thin Fluid Film Device (TFFD™) VitreOx™ aims to render the lens surface hydrophilic, whereas it is typically hydrophobic. By creating a hydrophilic polymeric nanomesh, the 3-D water droplets can be trapped to lie flatter, thus resulting in a flatter 2-D sheeting effect. The light can no longer be refracted at different angles off of the 3-dimensional water beads, thus eliminating the opacity of the lens surface.
Two animal trials were performed involving a rat and two pigs in order to prove the efficacy of VitreOx™ in addition to being compared with competitor, Covidien Clearify. A laparoscopy was performed on each animal, and the length of time that the endoscope took to fog was measured post product application. The results of the optimized animal clinical trials involving two Yucatan pigs showed that the scope treated with Covidien’s Clearify began fogging within 8 minutes and continued to do so for the remained of the surgery, as opposed to the scope with VitreOx™ which remained fog free for the full 90-minute procedure. The results proved the efficacy of our product.
The second part of the thesis aimed to optimize HemoClear™, the blood evacuating TFFD™. This was done by testing a higher concentration of 6 mg/mL fibrinogen as compared to previous work. After conducting an experiment designed to mimic closed-body cavity surgery it was determined that the HemoClear™ eliminated fog 67% of the time and evacuated blood with a success of 83%. Future work aims to continue testing at this concentration with variances in mixing and application technique.
ContributorsSinha, Saloni Agarwal (Author) / Culbertson, Robert (Thesis director) / Herbots, Nicole (Committee member) / Watson, Clarizza (Committee member) / Barrett, The Honors College (Contributor) / Department of Chemistry and Biochemistry (Contributor)
Created2015-05
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Description
In this paper, optimal control routines are applied to an existing problem of electron state transfer to determine if spin information can successfully be moved across a chain of donor atoms in silicon. The additional spin degrees of freedom are introduced into the formulation of the problem as well as

In this paper, optimal control routines are applied to an existing problem of electron state transfer to determine if spin information can successfully be moved across a chain of donor atoms in silicon. The additional spin degrees of freedom are introduced into the formulation of the problem as well as the control optimization algorithm. We find a timescale of transfer for spin quantum information across the chain fitting with a t > π/A and t > 2π/A transfer pulse time corresponding with rotation of states on the electron Bloch sphere where A is the electron-nuclear coupling constant. Introduction of a magnetic field weakens transfer
efficiencies at high field strengths and prohibits anti-aligned nuclear states from transferring. We also develop a rudimentary theoretical model based on simulated results and partially validate the characteristic transfer times for spin states. This model also establishes a framework for future work including the introduction of a magnetic field.
ContributorsMorgan, Eric Robert (Author) / Treacy, Michael (Thesis director) / Whaley, K. Birgitta (Committee member) / Greenman, Loren (Committee member) / Barrett, The Honors College (Contributor) / School of Mathematical and Statistical Sciences (Contributor) / Department of Physics (Contributor)
Created2015-05