Matching Items (71)
Description
Memories play an integral role in today's advanced ICs. Technology scaling has enabled high density designs at the price paid for impact due to variability and reliability. It is imperative to have accurate methods to measure and extract the variability in the SRAM cell to produce accurate reliability projections for future technologies. This work presents a novel test measurement and extraction technique which is non-invasive to the actual operation of the SRAM memory array. The salient features of this work include i) A single ended SRAM test structure with no disturbance to SRAM operations ii) a convenient test procedure that only requires quasi-static control of external voltages iii) non-iterative method that extracts the VTH variation of each transistor from eight independent switch point measurements. With the present day technology scaling, in addition to the variability with the process, there is also the impact of other aging mechanisms which become dominant. The various aging mechanisms like Negative Bias Temperature Instability (NBTI), Channel Hot Carrier (CHC) and Time Dependent Dielectric Breakdown (TDDB) are critical in the present day nano-scale technology nodes. In this work, we focus on the impact of NBTI due to aging in the SRAM cell and have used Trapping/De-Trapping theory based log(t) model to explain the shift in threshold voltage VTH. The aging section focuses on the following i) Impact of Statistical aging in PMOS device due to NBTI dominates the temporal shift of SRAM cell ii) Besides static variations , shifting in VTH demands increased guard-banding margins in design stage iii) Aging statistics remain constant during the shift, presenting a secondary effect in aging prediction. iv) We have investigated to see if the aging mechanism can be used as a compensation technique to reduce mismatch due to process variations. Finally, the entire test setup has been tested in SPICE and also validated with silicon and the results are presented. The method also facilitates the study of design metrics such as static, read and write noise margins and also the data retention voltage and thus help designers to improve the cell stability of SRAM.
ContributorsRavi, Venkatesa (Author) / Cao, Yu (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Clark, Lawrence (Committee member) / Arizona State University (Publisher)
Created2013
Description
ABSTRACT The D flip flop acts as a sequencing element while designing any pipelined system. Radiation Hardening by Design (RHBD) allows hardened circuits to be fabricated on commercially available CMOS manufacturing process. Recently, single event transients (SET's) have become as important as single event upset (SEU) in radiation hardened high speed digital designs. A novel temporal pulse based RHBD flip-flop design is presented. Temporally delayed pulses produced by a radiation hardened pulse generator design samples the data in three redundant pulse latches. The proposed RHBD flip-flop has been statistically designed and fabricated on 90 nm TSMC LP process. Detailed simulations of the flip-flop operation in both normal and radiation environments are presented. Spatial separation of critical nodes for the physical design of the flip-flop is carried out for mitigating multi-node charge collection upsets. The proposed flip-flop is also used in commercial CAD flows for high performance chip designs. The proposed flip-flop is used in the design and auto-place-route (APR) of an advanced encryption system and the metrics analyzed.
ContributorsKumar, Sushil (Author) / Clark, Lawrence (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Ogras, Umit Y. (Committee member) / Arizona State University (Publisher)
Created2014
Description
To uncover the neural correlates to go-directed behavior, single unit action potentials are considered fundamental computing units and have been examined by different analytical methodologies under a broad set of hypotheses. Using a behaving rat performing a directional choice learning task, we aim to study changes in rat's cortical neural patterns while he improved his task performance accuracy from chance to 80% or higher. Specifically, simultaneous multi-channel single unit neural recordings from the rat's agranular medial (AGm) and Agranular lateral (AGl) cortices were analyzed using joint peristimulus time histogram (JPSTHs), which effectively unveils firing coincidences in neural action potentials. My results based on data from six rats revealed that coincidences of pair-wise neural action potentials are higher when rats were performing the task than they were not at the learning stage, and this trend abated after the rats learned the task. Another finding is that the coincidences at the learning stage are stronger than that when the rats learned the task especially when they were performing the task. Therefore, this coincidence measure is the highest when the rats were performing the task at the learning stage. This may suggest that neural coincidences play a role in the coordination and communication among populations of neurons engaged in a purposeful act. Additionally, attention and working memory may have contributed to the modulation of neural coincidences during the designed task.
ContributorsCheng, Bing (Author) / Si, Jennie (Thesis advisor) / Chae, Junseok (Committee member) / Seo, Jae-Sun (Committee member) / Arizona State University (Publisher)
Created2014
Description
Photovoltaic (PV) systems are affected by converter losses, partial shading and other mismatches in the panels. This dissertation introduces a sub-panel maximum power point tracking (MPPT) architecture together with an integrated CMOS current sensor circuit on a chip to reduce the mismatch effects, losses and increase the efficiency of the PV system. The sub-panel MPPT increases the efficiency of the PV during the shading and replaces the bypass diodes in the panels with an integrated MPPT and DC-DC regulator. For the integrated MPPT and regulator, the research developed an integrated standard CMOS low power and high common mode range Current-to-Digital Converter (IDC) circuit and its application for DC-DC regulator and MPPT. The proposed charge based CMOS switched-capacitor circuit directly digitizes the output current of the DC-DC regulator without an analog-to-digital converter (ADC) and the need for high-voltage process technology. Compared to the resistor based current-sensing methods that requires current-to-voltage circuit, gain block and ADC, the proposed CMOS IDC is a low-power efficient integrated circuit that achieves high resolution, lower complexity, and lower power consumption. The IDC circuit is fabricated on a 0.7 um CMOS process, occupies 2mm x 2mm and consumes less than 27mW. The IDC circuit has been tested and used for boost DC-DC regulator and MPPT for photo-voltaic system. The DC-DC converter has an efficiency of 95%. The sub-module level power optimization improves the output power of a shaded panel by up to 20%, compared to panel MPPT with bypass diodes.
ContributorsMarti-Arbona, Edgar (Author) / Kiaei, Sayfe (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Kitchen, Jennifer (Committee member) / Seo, Jae-Sun (Committee member) / Arizona State University (Publisher)
Created2014
Description
This work describes the development of automated flows to generate pad rings, mixed signal power grids, and mega cells in a multi-project test chip. There were three major design flows that were created to create the test chip. The first was the pad ring which was used as the staring block for creating the test chip. This flow put all of the signals for the chip in the order that was wanted along the outside of the die along with creation of the power ring that is used to supply the chip with a robust power source.
The second flow that was created was used to put together a flash block that is based off of a XILIX XCFXXP. This flow was somewhat similar to how the pad ring flow worked except that optimizations and a clock tree was added into the flow. There was a couple of design redoes due to timing and orientation constraints.
Finally, the last flow that was created was the top level flow which is where all of the components are combined together to create a finished test chip ready for fabrication. The main components that were used were the finished flash block, HERMES, test structures, and a clock instance along with the pad ring flow for the creation of the pad ring and power ring.
Also discussed is some work that was done on a previous multi-project test chip. The work that was done was the creation of power gaters that were used like switches to turn the power on and off for some flash modules. To control the power gaters the functionality change of some pad drivers was done so that they output a higher voltage than what is seen in the core of the chip.
The second flow that was created was used to put together a flash block that is based off of a XILIX XCFXXP. This flow was somewhat similar to how the pad ring flow worked except that optimizations and a clock tree was added into the flow. There was a couple of design redoes due to timing and orientation constraints.
Finally, the last flow that was created was the top level flow which is where all of the components are combined together to create a finished test chip ready for fabrication. The main components that were used were the finished flash block, HERMES, test structures, and a clock instance along with the pad ring flow for the creation of the pad ring and power ring.
Also discussed is some work that was done on a previous multi-project test chip. The work that was done was the creation of power gaters that were used like switches to turn the power on and off for some flash modules. To control the power gaters the functionality change of some pad drivers was done so that they output a higher voltage than what is seen in the core of the chip.
ContributorsLieb, Christopher (Author) / Clark, Lawrence (Thesis advisor) / Holbert, Keith E. (Committee member) / Seo, Jae-Sun (Committee member) / Arizona State University (Publisher)
Created2015
Description
Switching Converters (SC) are an excellent choice for hand held devices due to their high power conversion efficiency. However, they suffer from two major drawbacks. The first drawback is that their dynamic response is sensitive to variations in inductor (L) and capacitor (C) values. A cost effective solution is implemented by designing a programmable digital controller. Despite variations in L and C values, the target dynamic response can be achieved by computing and programming the filter coefficients for a particular L and C. Besides, digital controllers have higher immunity to environmental changes such as temperature and aging of components. The second drawback of SCs is their poor efficiency during low load conditions if operated in Pulse Width Modulation (PWM) mode. However, if operated in Pulse Frequency Modulation (PFM) mode, better efficiency numbers can be achieved. A mostly-digital way of detecting PFM mode is implemented. Besides, a slow serial interface to program the chip, and a high speed serial interface to characterize mixed signal blocks as well as to ship data in or out for debug purposes are designed. The chip is taped out in 0.18µm IBM's radiation hardened CMOS process technology. A test board is built with the chip, external power FETs and driver IC. At the time of this writing, PWM operation, PFM detection, transitions between PWM and PFM, and both serial interfaces are validated on the test board.
ContributorsMumma Reddy, Abhiram (Author) / Bakkaloglu, Bertan (Thesis advisor) / Ogras, Umit Y. (Committee member) / Seo, Jae-Sun (Committee member) / Arizona State University (Publisher)
Created2014
Description
Register file (RF) memory is important in low power system on chip (SOC) due to its
inherent low voltage stability. Moreover, designs increasingly use compiled instead of custom memory blocks, which frequently employ static, rather than pre-charged dynamic RFs. In this work, the various RFs designed for a microprocessor cache and register files are discussed. Comparison between static and dynamic RF power dissipation and timing characteristics is also presented. The relative timing and power advantages of the designs are shown to be dependent on the memory aspect ratio, i.e. array width and height.
inherent low voltage stability. Moreover, designs increasingly use compiled instead of custom memory blocks, which frequently employ static, rather than pre-charged dynamic RFs. In this work, the various RFs designed for a microprocessor cache and register files are discussed. Comparison between static and dynamic RF power dissipation and timing characteristics is also presented. The relative timing and power advantages of the designs are shown to be dependent on the memory aspect ratio, i.e. array width and height.
ContributorsVashishtha, Vinay (Author) / Clark, Lawrence T. (Thesis advisor) / Seo, Jae-Sun (Committee member) / Ogras, Umit Y. (Committee member) / Arizona State University (Publisher)
Created2014
Description
The space environment comprises cosmic ray particles, heavy ions and high energy electrons and protons. Microelectronic circuits used in space applications such as satellites and space stations are prone to upsets induced by these particles. With transistor dimensions shrinking due to continued scaling, terrestrial integrated circuits are also increasingly susceptible to radiation upsets. Hence radiation hardening is a requirement for microelectronic circuits used in both space and terrestrial applications.
This work begins by exploring the different radiation hardened flip-flops that have been proposed in the literature and classifies them based on the different hardening techniques.
A reduced power delay element for the temporal hardening of sequential digital circuits is presented. The delay element single event transient tolerance is demonstrated by simulations using it in a radiation hardened by design master slave flip-flop (FF). Using the proposed delay element saves up to 25% total FF power at 50% activity factor. The delay element is used in the implementation of an 8-bit, 8051 designed in the TSMC 130 nm bulk CMOS.
A single impinging ionizing radiation particle is increasingly likely to upset multiple circuit nodes and produce logic transients that contribute to the soft error rate in most modern scaled process technologies. The design of flip-flops is made more difficult with increasing multi-node charge collection, which requires that charge storage and other sensitive nodes be separated so that one impinging radiation particle does not affect redundant nodes simultaneously. We describe a correct-by-construction design methodology to determine a-priori which hardened FF nodes must be separated, as well as a general interleaving scheme to achieve this separation. We apply the methodology to radiation hardened flip-flops and demonstrate optimal circuit physical organization for protection against multi-node charge collection.
Finally, the methodology is utilized to provide critical node separation for a new hardened flip-flop design that reduces the power and area by 31% and 35% respectively compared to a temporal FF with similar hardness. The hardness is verified and compared to other published designs via the proposed systematic simulation approach that comprehends multiple node charge collection and tests resiliency to upsets at all internal and input nodes. Comparison of the hardness, as measured by estimated upset cross-section, is made to other published designs. Additionally, the importance of specific circuit design aspects to achieving hardness is shown.
This work begins by exploring the different radiation hardened flip-flops that have been proposed in the literature and classifies them based on the different hardening techniques.
A reduced power delay element for the temporal hardening of sequential digital circuits is presented. The delay element single event transient tolerance is demonstrated by simulations using it in a radiation hardened by design master slave flip-flop (FF). Using the proposed delay element saves up to 25% total FF power at 50% activity factor. The delay element is used in the implementation of an 8-bit, 8051 designed in the TSMC 130 nm bulk CMOS.
A single impinging ionizing radiation particle is increasingly likely to upset multiple circuit nodes and produce logic transients that contribute to the soft error rate in most modern scaled process technologies. The design of flip-flops is made more difficult with increasing multi-node charge collection, which requires that charge storage and other sensitive nodes be separated so that one impinging radiation particle does not affect redundant nodes simultaneously. We describe a correct-by-construction design methodology to determine a-priori which hardened FF nodes must be separated, as well as a general interleaving scheme to achieve this separation. We apply the methodology to radiation hardened flip-flops and demonstrate optimal circuit physical organization for protection against multi-node charge collection.
Finally, the methodology is utilized to provide critical node separation for a new hardened flip-flop design that reduces the power and area by 31% and 35% respectively compared to a temporal FF with similar hardness. The hardness is verified and compared to other published designs via the proposed systematic simulation approach that comprehends multiple node charge collection and tests resiliency to upsets at all internal and input nodes. Comparison of the hardness, as measured by estimated upset cross-section, is made to other published designs. Additionally, the importance of specific circuit design aspects to achieving hardness is shown.
ContributorsShambhulingaiah, Sandeep (Author) / Clark, Lawrence (Thesis advisor) / Holbert, Keith E. (Committee member) / Seo, Jae sun (Committee member) / Allee, David (Committee member) / Arizona State University (Publisher)
Created2015
Description
Ever reducing time to market, along with short product lifetimes, has created a need to shorten the microprocessor design time. Verification of the design and its analysis are two major components of this design cycle. Design validation techniques can be broadly classified into two major categories: simulation based approaches and formal techniques. Simulation based microprocessor validation involves running millions of cycles using random or pseudo random tests and allows verification of the register transfer level (RTL) model against an architectural model, i.e., that the processor executes instructions as required. The validation effort involves model checking to a high level description or simulation of the design against the RTL implementation. Formal techniques exhaustively analyze parts of the design but, do not verify RTL against the architecture specification. The focus of this work is to implement a fully automated validation environment for a MIPS based radiation hardened microprocessor using simulation based approaches. The basic framework uses the classical validation approach in which the design to be validated is described in a Hardware Definition Language (HDL) such as VHDL or Verilog. To implement a simulation based approach a number of random or pseudo random tests are generated. The output of the HDL based design is compared against the one obtained from a "perfect" model implementing similar functionality, a mismatch in the results would thus indicate a bug in the HDL based design. Effort is made to design the environment in such a manner that it can support validation during different stages of the design cycle. The validation environment includes appropriate changes so as to support architecture changes which are introduced because of radiation hardening. The manner in which the validation environment is build is highly dependent on the specifications of the perfect model used for comparisons. This work implements the validation environment for two MIPS simulators as the reference model. Two bugs have been discovered in the RTL model, using simulation based approaches through the validation environment.
ContributorsSharma, Abhishek (Author) / Clark, Lawrence (Thesis advisor) / Holbert, Keith E. (Committee member) / Shrivastava, Aviral (Committee member) / Arizona State University (Publisher)
Created2011
Description
CMOS technology is expected to enter the 10nm regime for future integrated circuits (IC). Such aggressive scaling leads to vastly increased variability, posing a grand challenge to robust IC design. Variations in CMOS are often divided into two types: intrinsic variations and process-induced variations. Intrinsic variations are limited by fundamental physics. They are inherent to CMOS structure, considered as one of the ultimate barriers to the continual scaling of CMOS devices. In this work the three primary intrinsic variations sources are studied, including random dopant fluctuation (RDF), line-edge roughness (LER) and oxide thickness fluctuation (OTF). The research is focused on the modeling and simulation of those variations and their scaling trends. Besides the three variations, a time dependent variation source, Random Telegraph Noise (RTN) is also studied. Different from the other three variations, RTN does not contribute much to the total variation amount, but aggregate the worst case of Vth variations in CMOS. In this work a TCAD based simulation study on RTN is presented, and a new SPICE based simulation method for RTN is proposed for time domain circuit analysis. Process-induced variations arise from the imperfection in silicon fabrication, and vary from foundries to foundries. In this work the layout dependent Vth shift due to Rapid-Thermal Annealing (RTA) are investigated. In this work, we develop joint thermal/TCAD simulation and compact modeling tools to analyze performance variability under various layout pattern densities and RTA conditions. Moreover, we propose a suite of compact models that bridge the underlying RTA process with device parameter change for efficient design optimization.
ContributorsYe, Yun, Ph.D (Author) / Cao, Yu (Thesis advisor) / Yu, Hongbin (Committee member) / Song, Hongjiang (Committee member) / Clark, Lawrence (Committee member) / Arizona State University (Publisher)
Created2011