Matching Items (205)
Description
In semiconductor physics, many properties or phenomena of materials can be brought to light through certain changes in the materials. Having a tool to define new material properties so as to highlight certain phenomena greatly increases the ability to understand that phenomena. The generalized Monte Carlo tool allows the user to do that by keeping every parameter used to define a material, within the non-parabolic band approximation, a variable in the control of the user. A material is defined by defining its valleys, energies, valley effective masses and their directions. The types of scattering to be included can also be chosen. The non-parabolic band structure model is used. With the deployment of the generalized Monte Carlo tool onto www.nanoHUB.org the tool will be available to users around the world. This makes it a very useful educational tool that can be incorporated into curriculums. The tool is integrated with Rappture, to allow user-friendly access of the tool. The user can freely define a material in an easy systematic way without having to worry about the coding involved. The output results are automatically graphed and since the code incorporates an analytic band structure model, it is relatively fast. The versatility of the tool has been investigated and has produced results closely matching the experimental values for some common materials. The tool has been uploaded onto www.nanoHUB.org by integrating it with the Rappture interface. By using Rappture as the user interface, one can easily make changes to the current parameter sets to obtain even more accurate results.
ContributorsHathwar, Raghuraj (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen M (Committee member) / Saraniti, Marco (Committee member) / Arizona State University (Publisher)
Created2011
Description
In very small electronic devices the alternate capture and emission of carriers at an individual defect site located at the interface of Si:SiO2 of a MOSFET generates discrete switching in the device conductance referred to as a random telegraph signal (RTS) or random telegraph noise (RTN). In this research work, the integration of random defects positioned across the channel at the Si:SiO2 interface from source end to the drain end in the presence of different random dopant distributions are used to conduct Ensemble Monte-Carlo ( EMC ) based numerical simulation of key device performance metrics for 45 nm gate length MOSFET device. The two main performance parameters that affect RTS based reliability measurements are percentage change in threshold voltage and percentage change in drain current fluctuation in the saturation region. It has been observed as a result of the simulation that changes in both and values moderately decrease as the defect position is gradually moved from source end to the drain end of the channel. Precise analytical device physics based model needs to be developed to explain and assess the EMC simulation based higher VT fluctuations as experienced for trap positions at the source side. A new analytical model has been developed that simultaneously takes account of dopant number variations in the channel and depletion region underneath and carrier mobility fluctuations resulting from fluctuations in surface potential barriers. Comparisons of this new analytical model along with existing analytical models are shown to correlate with 3D EMC simulation based model for assessment of VT fluctuations percentage induced by a single interface trap. With scaling of devices beyond 32 nm node, halo doping at the source and drain are routinely incorporated to combat the threshold voltage roll-off that takes place with effective channel length reduction. As a final study on this regard, 3D EMC simulation method based computations of threshold voltage fluctuations have been performed for varying source and drain halo pocket length to illustrate the threshold voltage fluctuations related reliability problems that have been aggravated by trap positions near the source at the interface compared to conventional 45 nm MOSFET.
ContributorsAshraf, Nabil Shovon (Author) / Vasileska, Dragica (Thesis advisor) / Schroder, Dieter (Committee member) / Goodnick, Stephen (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2011
Description
Early-age cracks in fresh concrete occur mainly due to high rate of surface evaporation and restraint offered by the contracting solid phase. Available test methods that simulate severe drying conditions, however, were not originally designed to focus on evaporation and transport characteristics of the liquid-gas phases in a hydrating cementitious microstructure. Therefore, these tests lack accurate measurement of the drying rate and data interpretation based on the principles of transport properties is limited. A vacuum-based test method capable of simulating early-age cracks in 2-D cement paste is developed which continuously monitors the weight loss and changes to the surface characteristics. 2-D crack evolution is documented using time-lapse photography. Effects of sample size, w/c ratio, initial curing and fiber content are studied. In the subsequent analysis, the cement paste phase is considered as a porous medium and moisture transport is described based on surface mass transfer and internal moisture transport characteristics. Results indicate that drying occurs in two stages: constant drying rate period (stage I), followed by a falling drying rate period (stage II). Vapor diffusion in stage I and unsaturated flow within porous medium in stage II determine the overall rate of evaporation. The mass loss results are analyzed using diffusion-based models. Results show that moisture diffusivity in stage I is higher than its value in stage II by more than one order of magnitude. The drying model is used in conjunction with a shrinkage model to predict the development of capillary pressures. Similar approach is implemented in drying restrained ring specimens to predict 1-D crack width development. An analytical approach relates diffusion, shrinkage, creep, tensile and fracture properties to interpret the experimental data. Evaporation potential is introduced based on the boundary layer concept, mass transfer, and a driving force consisting of the concentration gradient. Effect of wind velocity is reflected on Reynolds number which affects the boundary layer on sample surface. This parameter along with Schmidt and Sherwood numbers are used for prediction of mass transfer coefficient. Concentration gradient is shown to be a strong function of temperature and relative humidity and used to predict the evaporation potential. Results of modeling efforts are compared with a variety of test results reported in the literature. Diffusivity data and results of 1-D and 2-D image analyses indicate significant effects of fibers on controlling early-age cracks. Presented models are capable of predicting evaporation rates and moisture flow through hydrating cement-based materials during early-age drying and shrinkage conditions.
ContributorsBakhshi, Mehdi (Author) / Mobasher, Barzin (Thesis advisor) / Rajan, Subramaniam D. (Committee member) / Zapata, Claudia E. (Committee member) / Arizona State University (Publisher)
Created2011
Description
A primary motivation of research in photovoltaic technology is to obtain higher efficiency photovoltaic devices at reduced cost of production so that solar electricity can be cost competitive. The majority of photovoltaic technologies are based on p-n junction, with efficiency potential being much lower than the thermodynamic limits of individual technologies and thereby providing substantial scope for further improvements in efficiency. The thesis explores photovoltaic devices using new physical processes that rely on thin layers and are capable of attaining the thermodynamic limit of photovoltaic technology. Silicon heterostructure is one of the candidate technologies in which thin films induce a minority carrier collecting junction in silicon and the devices can achieve efficiency close to the thermodynamic limits of silicon technology. The thesis proposes and experimentally establishes a new theory explaining the operation of silicon heterostructure solar cells. The theory will assist in identifying the optimum properties of thin film materials for silicon heterostructure and help in design and characterization of the devices, along with aiding in developing new devices based on this technology. The efficiency potential of silicon heterostructure is constrained by the thermodynamic limit (31%) of single junction solar cell and is considerably lower than the limit of photovoltaic conversion (~ 80 %). A further improvement in photovoltaic conversion efficiency is possible by implementing a multiple quasi-fermi level system (MQFL). A MQFL allows the absorption of sub band gap photons with current being extracted at a higher band-gap, thereby allowing to overcome the efficiency limit of single junction devices. A MQFL can be realized either by thin epitaxial layers of alternating higher and lower band gap material with nearly lattice matched (quantum well) or highly lattice mismatched (quantum dot) structure. The thesis identifies the material combination for quantum well structure and calculates the absorption coefficient of a MQFl based on quantum well. GaAsSb (barrier)/InAs(dot) was identified as a candidate material for MQFL using quantum dot. The thesis explains the growth mechanism of GaAsSb and the optimization of GaAsSb and GaAs heterointerface.
ContributorsGhosha, Kuṇāla (Author) / Bowden, Stuart (Thesis advisor) / Honsberg, Christiana (Thesis advisor) / Vasileska, Dragica (Committee member) / Goodnick, Stephen (Committee member) / Arizona State University (Publisher)
Created2011
Description
Semiconductor devices are generally analyzed with relatively simple equations or with detailed computer simulations. Most text-books use these simple equations and show device diagrams that are frequently very simplified and occasionally incorrect. For example, the carrier densities near the pinch-off point in MOSFETs and JFETs and the minority carrier density in the base near the reverse-biased base-collector junction are frequently assumed to be zero or near zero. Also the channel thickness at the pinch-off point is often shown to approach zero. None of these assumptions can be correct. The research in thesis addresses these points. I simulated the carrier densities, potentials, electric fields etc. of MOSFETs, BJTs and JFETs at and near the pinch-off regions to determine exactly what happens there. I also simulated the behavior of the quasi-Fermi levels. For MOSFETs, the channel thickness expands slightly before the pinch-off point and then spreads out quickly in a triangular shape and the space-charge region under the channel actually shrinks as the potential increases from source to drain. For BJTs, with collector-base junction reverse biased, most minority carriers diffuse through the base from emitter to collector very fast, but the minority carrier concentration at the collector-base space-charge region is not zero. For JFETs, the boundaries of the space-charge region are difficult to determine, the channel does not disappear after pinch off, the shape of channel is always tapered, and the carrier concentration in the channel decreases progressively. After simulating traditional sized devices, I also simulated typical nano-scaled devices and show that they behave similarly to large devices. These simulation results provide a more complete understanding of device physics and device operation in those regions usually not addressed in semiconductor device physics books.
ContributorsYang, Xuan (Author) / Schroder, Dieter K. (Thesis advisor) / Vasileska, Dragica (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2011
Description
The long wavelength infrared region (LWIR) and mid wavelength infrared region (MWIR) are of great interest as detection in this region offers a wide range of real time applications. Optoelectronic devices operating in the LWIR and MWIR region offer potential applications such as; optical gas sensing, free-space optical communications, infrared counter-measures, biomedical and thermal imaging etc. HgCdTe is a prominent narrow bandgap material that operates in the LWIR region. The focus of this research work is to simulate and analyze the characteristics of a Hg1-xCdxTe photodetector. To achieve this, the tool `OPTODET' has been developed, where various device parameters can be varied and the resultant output can be analyzed. By the study of output characteristics in response to various changes in device parameters will allow users to understand the considerations that must be made in order to reach the optimum working point of an infrared detector. The tool which has been developed is a 1-D drift diffusion based simulator which solves the 1-D Poisson equation to determine potentials and utilizes the results of the 1-D electron and hole continuity equations to determine current. Parameters such as absorption co-efficient, quantum efficiency, dark current, noise, Transit time and detectivity can be simulated. All major recombination mechanisms such as SRH, Radiative and Auger recombination have been considered. Effects of band to band tunnelling have also been considered to correctly model the dark current characteristics.
ContributorsMuralidharan, Pradyumna (Author) / Vasileska, Dragica (Thesis advisor) / Wijewarnasuriya, Priyalal S. (Committee member) / Zhang, Yong-Hang (Committee member) / Arizona State University (Publisher)
Created2011
Description
Damage assessment and residual useful life estimation (RULE) are essential for aerospace, civil and naval structures. Structural Health Monitoring (SHM) attempts to automate the process of damage detection and identification. Multiscale modeling is a key element in SHM. It not only provides important information on the physics of failure, such as damage initiation and growth, the output can be used as "virtual sensing" data for detection and prognosis. The current research is part of an ongoing multidisciplinary effort to develop an integrated SHM framework for metallic aerospace components. In this thesis a multiscale model has been developed by bridging the relevant length scales, micro, meso and macro (or structural scale). Micro structural representations obtained from material characterization studies are used to define the length scales and to capture the size and orientation of the grains at the micro level. Parametric studies are conducted to estimate material parameters used in this constitutive model. Numerical and experimental simulations are performed to investigate the effects of Representative Volume Element (RVE) size, defect area fraction and distribution. A multiscale damage criterion accounting for crystal orientation effect is developed. This criterion is applied for fatigue crack initial stage prediction. A damage evolution rule based on strain energy density is modified to incorporate crystal plasticity at the microscale (local). Optimization approaches are used to calculate global damage index which is used for the RVE failure prediciton. Potential cracking directions are provided from the damage criterion simultaneously. A wave propagation model is incorporated with the damage model to detect changes in sensing signals due to plastic deformation and damage growth.
ContributorsLuo, Chuntao (Author) / Chattopadhyay, Aditi (Thesis advisor) / Papandreou-Suppappola, Antonia (Committee member) / Jiang, Hanqing (Committee member) / Dai, Lenore (Committee member) / Li, Jian (Committee member) / Arizona State University (Publisher)
Created2011
Description
Polymer and polymer matrix composites (PMCs) materials are being used extensively in different civil and mechanical engineering applications. The behavior of the epoxy resin polymers under different types of loading conditions has to be understood before the mechanical behavior of Polymer Matrix Composites (PMCs) can be accurately predicted. In many structural applications, PMC structures are subjected to large flexural loadings, examples include repair of structures against earthquake and engine fan cases. Therefore it is important to characterize and model the flexural mechanical behavior of epoxy resin materials. In this thesis, a comprehensive research effort was undertaken combining experiments and theoretical modeling to investigate the mechanical behavior of epoxy resins subject to different loading conditions. Epoxy resin E 863 was tested at different strain rates. Samples with dog-bone geometry were used in the tension tests. Small sized cubic, prismatic, and cylindrical samples were used in compression tests. Flexural tests were conducted on samples with different sizes and loading conditions. Strains were measured using the digital image correlation (DIC) technique, extensometers, strain gauges, and actuators. Effects of triaxiality state of stress were studied. Cubic, prismatic, and cylindrical compression samples undergo stress drop at yield, but it was found that only cubic samples experience strain hardening before failure. Characteristic points of tensile and compressive stress strain relation and load deflection curve in flexure were measured and their variations with strain rate studied. Two different stress strain models were used to investigate the effect of out-of-plane loading on the uniaxial stress strain response of the epoxy resin material. The first model is a strain softening with plastic flow for tension and compression. The influence of softening localization on material behavior was investigated using the DIC system. It was found that compression plastic flow has negligible influence on flexural behavior in epoxy resins, which are stronger in pre-peak and post-peak softening in compression than in tension. The second model was a piecewise-linear stress strain curve simplified in the post-peak response. Beams and plates with different boundary conditions were tested and analytically studied. The flexural over-strength factor for epoxy resin polymeric materials were also evaluated.
ContributorsYekani Fard, Masoud (Author) / Chattopadhyay, Aditi (Thesis advisor) / Dai, Lenore (Committee member) / Li, Jian (Committee member) / Papandreou-Suppappola, Antonia (Committee member) / Rajadas, John (Committee member) / Arizona State University (Publisher)
Created2011
Description
A method of determining nanoparticle temperature through fluorescence intensity levels is described. Intracellular processes are often tracked through the use of fluorescence tagging, and ideal temperatures for many of these processes are unknown. Through the use of fluorescence-based thermometry, cellular processes such as intracellular enzyme movement can be studied and their respective temperatures established simultaneously. Polystyrene and silica nanoparticles are synthesized with a variety of temperature-sensitive dyes such as BODIPY, rose Bengal, Rhodamine dyes 6G, 700, and 800, and Nile Blue A and Nile Red. Photographs are taken with a QImaging QM1 Questar EXi Retiga camera while particles are heated from 25 to 70 C and excited at 532 nm with a Coherent DPSS-532 laser. Photographs are converted to intensity images in MATLAB and analyzed for fluorescence intensity, and plots are generated in MATLAB to describe each dye's intensity vs temperature. Regression curves are created to describe change in fluorescence intensity over temperature. Dyes are compared as nanoparticle core material is varied. Large particles are also created to match the camera's optical resolution capabilities, and it is established that intensity values increase proportionally with nanoparticle size. Nile Red yielded the closest-fit model, with R2 values greater than 0.99 for a second-order polynomial fit. By contrast, Rhodamine 6G only yielded an R2 value of 0.88 for a third-order polynomial fit, making it the least reliable dye for temperature measurements using the polynomial model. Of particular interest in this work is Nile Blue A, whose fluorescence-temperature curve yielded a much different shape from the other dyes. It is recommended that future work describe a broader range of dyes and nanoparticle sizes, and use multiple excitation wavelengths to better quantify each dye's quantum efficiency. Further research into the effects of nanoparticle size on fluorescence intensity levels should be considered as the particles used here greatly exceed 2 ìm. In addition, Nile Blue A should be further investigated as to why its fluorescence-temperature curve did not take on a characteristic shape for a temperature-sensitive dye in these experiments.
ContributorsTomforde, Christine (Author) / Phelan, Patrick (Thesis advisor) / Dai, Lenore (Committee member) / Adrian, Ronald (Committee member) / Arizona State University (Publisher)
Created2011
Description
Gene therapy is a promising technology for the treatment of various nonheritable and genetically acquired diseases. It involves delivery of a therapeutic gene into target cells to induce cellular responses against diseases. Successful gene therapy requires an efficient gene delivery vector to deliver genetic materials into target cells. There are two major classes of gene delivery vectors: viral and non-viral vectors. Recently, non-viral vectors such as cationic polymers have attracted more attention than viral vectors because they are versatile and non-immunogenic. However, cationic polymers suffer from poor gene delivery efficiency due to biological barriers. The objective of this research is to develop strategies to overcome the barriers and enhance polymer-mediated transgene expression. This study aimed to (i) develop new polymer vectors for gene delivery, (ii) investigate the intracellular barriers in polymer-mediated gene delivery, and (iii) explore new approaches to overcome the barriers. A cationic polymer library was developed by employing a parallel synthesis and high-throughput screening method. Lead polymers from the library were identified from the library based on relative levels of transgene expression and toxicity in PC3-PSMA prostate cancer cells. However, transgene expression levels were found to depend on intracellular localization of polymer-gene complexes (polyplexes). Transgene expression was higher when polyplexes were dispersed rather than localized in the cytoplasm. Combination treatments using small molecule chemotherapeutic drugs, e.g. histone deacetylase inhibitors (HDACi) or Aurora kinase inhibitor (AKI) increased dispersion of polyplexes in the cytoplasm and significantly enhanced transgene expression. The combination treatment using polymer-mediated delivery of p53 tumor-suppressor gene and AKI increased p53 expression in PC3-PSMA cells, inhibited the cell proliferation by ~80% and induced apoptosis. Polymer-mediated p53 gene delivery in combination with AKI offers a promising treatment strategy for in vivo and clinical studies of cancer gene therapy.
ContributorsBarua, Sutapa (Author) / Rege, Kaushal (Thesis advisor) / Dai, Lenore (Committee member) / Meldrum, Deirdre R. (Committee member) / Sierks, Michael (Committee member) / Voelkel-Johnson, Christina (Committee member) / Arizona State University (Publisher)
Created2011