Matching Items (17)
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Description
The Solid State Transformer (SST) is an essential component in the FREEDM system. This research focuses on the modeling of the SST and the controller hardware in the loop (CHIL) implementation of the SST for the support of the FREEDM system demonstration. The energy based control strategy for a three-stage

The Solid State Transformer (SST) is an essential component in the FREEDM system. This research focuses on the modeling of the SST and the controller hardware in the loop (CHIL) implementation of the SST for the support of the FREEDM system demonstration. The energy based control strategy for a three-stage SST is analyzed and applied. A simplified average model of the three-stage SST that is suitable for simulation in real time digital simulator (RTDS) has been developed in this study. The model is also useful for general time-domain power system analysis and simulation. The proposed simplified av-erage model has been validated in MATLAB and PLECS. The accuracy of the model has been verified through comparison with the cycle-by-cycle average (CCA) model and de-tailed switching model. These models are also implemented in PSCAD, and a special strategy to implement the phase shift modulation has been proposed to enable the switching model simulation in PSCAD. The implementation of the CHIL test environment of the SST in RTDS is described in this report. The parameter setup of the model has been discussed in detail. One of the dif-ficulties is the choice of the damping factor, which is revealed in this paper. Also the grounding of the system has large impact on the RTDS simulation. Another problem is that the performance of the system is highly dependent on the switch parameters such as voltage and current ratings. Finally, the functionalities of the SST have been realized on the platform. The distributed energy storage interface power injection and reverse power flow have been validated. Some limitations are noticed and discussed through the simulation on RTDS.
ContributorsJiang, Youyuan (Author) / Ayyanar, Raja (Thesis advisor) / Holbert, Keith E. (Committee member) / Chowdhury, Srabanti (Committee member) / Arizona State University (Publisher)
Created2014
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Description
This research has studied remote plasma enhanced atomic layer deposited Ga2O3 thin films with gallium acetylacetonate (Ga(acac)3) as Ga precursor and remote inductively coupled oxygen plasma as oxidizer. The Ga2O3 thin films were mainly considered as passivation layers on GaN. Growth conditions including Ga(acac)3 precursor pulse time, O2 plasma pulse

This research has studied remote plasma enhanced atomic layer deposited Ga2O3 thin films with gallium acetylacetonate (Ga(acac)3) as Ga precursor and remote inductively coupled oxygen plasma as oxidizer. The Ga2O3 thin films were mainly considered as passivation layers on GaN. Growth conditions including Ga(acac)3 precursor pulse time, O2 plasma pulse time, N2 purge time and deposition temperature were investigated and optimized on phosphorus doped Si (100) wafer to achieve a saturated self-limiting growth. A temperature growth window was observed between 150 ℃ and 320 ℃. Ga precursor molecules can saturate on the substrate surface in 0.6 s in one cycle and the plasma power saturates at 150 W. A growth rate of 0.31 Å/cycle was observed for PEALD Ga2O3. Since the study is devoted towards Ga2O3 working as passivation layer on GaN, the band alignment of Ga2O3 on GaN were further determined with X-ray Photoemission Spectroscopy and Ultraviolet Photoemission Spectroscopy. Two models are often used to decide the band alignment of a heterojunction: the electron affinity model assumes the heterojunction aligns at the vacuum level, and the charge neutrality level model (CNL) which considers the presence of an interface dipole. The conduction band offset (CBO), valence band offset (VBO) and band bending (BB) of PEALD Ga2O3 thin films on GaN were 0.1 ±0.2 eV, 1.0±0.2 eV and 0.3 eV respectively. Type-I band alignments were determined. Further study including using PEALD Ga2O3 as passivation layer on GaN MOS gate and applying atomic layer etching to GaN was described.
ContributorsHao, Mei (Author) / Nemanich, Robert J. (Thesis advisor) / Ponce, Fernando (Committee member) / Chamberlin, Ralph (Committee member) / Chowdhury, Srabanti (Committee member) / Arizona State University (Publisher)
Created2018
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Description
The dopamine 2 receptor (D2R) is a Class A GPCR which is essential for signaling in the nervous system, and has been implicated in numerous illnesses. While there are over 50 currently approved drugs which act on D2R, the structure has never been determined in detail. Although crystallography has historically

The dopamine 2 receptor (D2R) is a Class A GPCR which is essential for signaling in the nervous system, and has been implicated in numerous illnesses. While there are over 50 currently approved drugs which act on D2R, the structure has never been determined in detail. Although crystallography has historically been difficult with GPCRs, in recent years many structures have been solved using lipidic cubic phase (LCP) crystallization techniques. Sample preparation for LCP crystallization typically requires optimization of genetic constructs, recombinant expression, and purification techniques in order to produce a sample with sufficient stability and homogeneity. This study compares several genetic constructs utilizing different promoters, fusion proteins, fusion positions, and truncations in order to determine a high quality construct for LCP crystallization of
D2R. All constructs were expressed using the Bac-to-bac baculovirus expression system, then extracted with n-Dodecyl-β-D-Maltoside (DDM) and purified using metal affinity chromatography. Samples were then tested for quantity, purity, and homogeneity using SDS-PAGE, western blot, and size-exclusion chromatography. High quality samples were chosen based on insect cell expression levels, purification yield, and stability estimated by the levels of homomeric protein relative to aggregated protein. A final construct was chosen with which to continue future studies in optimization of thermal stability and crystallization conditions. Future work on this project is required to produce a sample amenable to crystallization. Screening of ligands for co-crystallization,
thermostabilizing point mutations, and potentially optimization of extraction and purification techniques prior to crystallization trials. Solving the D2R structure will lead to an increased understanding of its signaling mechanism and the mechanisms of currently approved drugs, while also providing a basis for more effective structure-based drug design.
ContributorsErler, Maya Marie (Author) / Liu, Wei (Thesis director) / He, Ximin (Committee member) / School of Molecular Sciences (Contributor) / Barrett, The Honors College (Contributor)
Created2016-12
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Description
The main objective of this project is to create a hydrogel based material system to capture and release CCRF-CEM Leukemia cancer cells via chemo-mechanical modulation. This system is composed of an aptamer-functionalized hydrogel thin film at the bottom of a microfluidic channel, which changes its film thickness as the temperature

The main objective of this project is to create a hydrogel based material system to capture and release CCRF-CEM Leukemia cancer cells via chemo-mechanical modulation. This system is composed of an aptamer-functionalized hydrogel thin film at the bottom of a microfluidic channel, which changes its film thickness as the temperature of the fluid in the system changes. The functionalized hydrogel film has been created as the primary steps to creating the microfluidic device that could capture and release leukemia cells by turning the temperature of the fluid and length of exposure. Circulating tumor cells have recently become a highly studied area since they have become associated with the likelihood of patient survival. Further, circulating tumor cells can be used to determine changes in the genome of the cancer leading to targeted treatment. First, the aptamers were attached onto the hydrogel through an EDC/NHS reaction. The aptamers were verified to be attached onto the hydrogel through FTIR spectroscopy. The cell capture experiments were completed by exposing the hydrogel to a solution of leukemia cells for 10 minutes at room temperature. The cell release experiments were completed by exposing the hydrogel to a 40°C solution. Several capture and release experiments were completed to measure how many cells could be captured, how quickly, and how many cells captured were released. The aptamers were chemically attached to the hydrogel. 300 cells per square millimeter could be captured at a time in a 10 minute time period and released in a 5 minute period. Of the cells captured, 96% of them were alive once caught. 99% of cells caught were released once exposed to elevated temperature. The project opens the possibility to quickly and efficiently capture and release tumor cells using only changes in temperature. Further, most of the cells that were captured were alive and nearly all of those were released leading to high survival and capture efficiency.
ContributorsPaxton, Rebecca Joanne (Author) / Stephanopoulos, Nicholas (Thesis director) / He, Ximin (Committee member) / Gould, Ian (Committee member) / Materials Science and Engineering Program (Contributor) / School of Molecular Sciences (Contributor) / Barrett, The Honors College (Contributor)
Created2016-12
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Description
GaN and AlGaN have shown great potential in next-generation power and RF electronics. However, these devices are limited by reliability issues such as leakage current and current collapse that result from surface and interface states on GaN and AlGaN. This dissertation, therefore, examined these electronic states, focusing on the following

GaN and AlGaN have shown great potential in next-generation power and RF electronics. However, these devices are limited by reliability issues such as leakage current and current collapse that result from surface and interface states on GaN and AlGaN. This dissertation, therefore, examined these electronic states, focusing on the following two points:

First, the surface electronic state configuration was examined with regards to the polarization bound 1013 charges/cm2 that increases with aluminum content. This large bound charge requires compensation either externally by surface states or internally by the space charge regions as relates to band bending. In this work, band bending was measured after different surface treatments of GaN and AlGaN to determine the effects of specific surface states on the electronic state configuration. Results showed oxygen-terminated N-face GaN, Ga-face GaN, and Ga-face Al0.25Ga0.75N surface were characterized by similar band bending regardless of the polarization bound charge, suggesting a Fermi level pinning state ~0.4-0.8 eV below the conduction band minimum. On oxygen-free Ga-face GaN, Al0.15Ga0.85N, Al0.25Ga0.75N, and Al0.35Ga0.65N, band bending increased slightly with aluminum content and thus did not exhibit the same pinning behavior; however, there was still significant compensating charge on these surfaces (~1013 charges/cm2). This charge is likely related to nitrogen vacancies and/or gallium dangling bonds.

In addition, this wozrk investigated the interface electronic state configuration of dielectric/GaN and AlGaN interfaces with regards to deposition conditions and aluminum content. Specifically, oxygen plasma-enhanced atomic layer deposited (PEALD) was used to deposit SiO2. Growth temperature was shown to influence the film quality, where room temperature deposition produced the highest quality films in terms of electrical breakdown. In addition, the valence band offsets (VBOs) appeared to decrease with the deposition temperature, which likely related to an electric field across the Ga2O3 interfacial layer. VBOs were also determined with respect to aluminum content at the PEALD-SiO2/AlxGa1-xN interface, giving 3.0, 2.9, 2.9, and 2.8 eV for 0%, 15%, 25%, and 35% aluminum content, respectively—with corresponding conduction band offsets of 2.5, 2.2, 1.9, and 1.8 eV. This suggests the largest difference manifests in the conduction band, which is in agreement with the charge neutrality level model.
ContributorsEller, Brianna (Author) / Nemanich, Robert J (Thesis advisor) / Chowdhury, Srabanti (Committee member) / McCartney, Martha (Committee member) / Ponce, Fernando (Committee member) / Smith, David (Committee member) / Arizona State University (Publisher)
Created2015
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Description
Polymer-gold composite particles are of tremendous research interests. Contributed by their unique structures, these particles demonstrate superior properties for optical, catalytic and electrical applications. Moreover, the incorporation of “smart” polymers into polymer-gold composite particles enables the composite particles synergistically respond to environment-stimuli like temperature, pH and light with promising applications

Polymer-gold composite particles are of tremendous research interests. Contributed by their unique structures, these particles demonstrate superior properties for optical, catalytic and electrical applications. Moreover, the incorporation of “smart” polymers into polymer-gold composite particles enables the composite particles synergistically respond to environment-stimuli like temperature, pH and light with promising applications in multiple areas.

A novel Pickering emulsion polymerization route is found for synthesis of core-shell structured polymer-gold composite particles. It is found that the surface coverage of gold nanoparticles (AuNP) on a polystyrene core is influenced by gold nanoparticle concentration and hydrophobicity. More importantly, the absorption wavelength of polystyrene-gold composite particles is tunable by adjusting AuNP interparticle distance. Further, core-shell structured polystyrene-gold composite particles demonstrate excellent catalyst recyclability.

Asymmetric polystyrene-gold composite particles are successfully synthesized via seeded emulsion polymerization, where AuNPs serve as seeds, allowing the growth of styrene monomers/oligomers on them. These particles also demonstrate excellent catalyst recyclability. Further, monomers of “smart” polymers, poly (N-isopropylacrylamide) (PNIPAm), are successfully copolymerized into asymmetric composite particles, enabling these particles’ thermo-responsiveness with significant size variation around lower critical solution temperature (LCST) of 31°C. The significant size variation gives rise to switchable scattering intensity property, demonstrating potential applications in intensity-based optical sensing.

Multipetal and dumbbell structured gold-polystyrene composite particles are also successfully synthesized via seeded emulsion polymerization. It is intriguing to observe that by controlling reaction time and AuNP size, tetrapetal-structured, tripetal-structured and dumbbell-structured gold-polystyrene are obtained. Further, “smart” PNIPAm polymers are successfully copolymerized into dumbbell-shaped particles, showing significant size variation around LCST. Self-modulated catalytic activity around LCST is achieved for these particles. It is hypothesized that above LCST, the significant shrinkage of particles limits diffusion of reaction molecules to the surface of AuNPs, giving a reduced catalytic activity.

Finally, carbon black (CB) particles are successfully employed for synthesis of core- shell PNIPAm/polystyrene-CB particles. The thermo-responsive absorption characteristics of PNIPAm/polystyrene-CB particles enable them potentially suitable to serve as “smart” nanofluids with self-controlled temperature. Compared to AuNPs, CB particles provide desirable performance here, because they show no plasmon resonance in visible wavelength range, whereas AuNPs’ absorption in the visible wavelength range is undesirable.
ContributorsZhang, Mingmeng (Author) / Dai, Lenore L (Committee member) / Phelan, Patrick E (Committee member) / Otanicar, Todd P (Committee member) / Lin, Jerry (Committee member) / He, Ximin (Committee member) / Arizona State University (Publisher)
Created2015
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Description
Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position. Although SiC metal oxide semiconductor (MOS) technology has made significant progress

Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position. Although SiC metal oxide semiconductor (MOS) technology has made significant progress in recent years, there are still a number of issues to be overcome before more commercial SiC devices can enter the market. The prevailing issues surrounding SiC MOSFET devices are the low channel mobility, the low quality of the oxide layer and the high interface state density at the SiC/SiO2 interface. Consequently, there is a need for research to be performed in order to have a better understanding of the factors causing the poor SiC/SiO2 interface properties. In this work, we investigated the generation lifetime in SiC materials by using the pulsed metal oxide semiconductor (MOS) capacitor method and measured the interface state density distribution at the SiC/SiO2 interface by using the conductance measurement and the high-low frequency capacitance technique. These measurement techniques have been performed on n-type and p-type SiC MOS capacitors. In the course of our investigation, we observed fast interface states at semiconductor-dielectric interfaces in SiC MOS capacitors that underwent three different interface passivation processes, such states were detected in the nitrided samples but not observed in PSG-passivated samples. This result indicate that the lack of fast states at PSG-passivated interface is one of the main reasons for higher channel mobility in PSG MOSFETs. In addition, the effect of mobile ions in the oxide on the response time of interface states has been investigated. In the last chapter we propose additional methods of investigation that can help elucidate the origin of the particular interface states, enabling a more complete understanding of the SiC/SiO2 material system.
ContributorsKao, Wei-Chieh (Author) / Goryll, Michael (Thesis advisor) / Chowdhury, Srabanti (Committee member) / Yu, Hongbin (Committee member) / Marinella, Matthew (Committee member) / Arizona State University (Publisher)
Created2015
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Description
Origami and Kirigami are two traditional art forms in the world. Origami, from

‘ori’ meaning folding, and ‘kami’ meaning paper is the art of paper folding. Kirigami, from ‘kiri’ meaning cutting, is the art of the combination of paper cutting and paper folding. In this dissertation, Origami and kirigami concepts were

Origami and Kirigami are two traditional art forms in the world. Origami, from

‘ori’ meaning folding, and ‘kami’ meaning paper is the art of paper folding. Kirigami, from ‘kiri’ meaning cutting, is the art of the combination of paper cutting and paper folding. In this dissertation, Origami and kirigami concepts were successively utilized in making stretchable lithium ion batteries and three-dimensional (3D) silicon structure which both provide excellent mechanical characteristics.
ContributorsSong, Zeming (Author) / Jiang, Hanqing (Thesis advisor) / Dai, Lenore (Committee member) / Yu, Hongbin (Committee member) / He, Ximin (Committee member) / Arizona State University (Publisher)
Created2016
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Description
In this work, the insight provided by our sophisticated Full Band Monte Carlo simulator is used to analyze the behavior of state-of-art devices like GaN High Electron Mobility Transistors and Hot Electron Transistors. Chapter 1 is dedicated to the description of the simulation tool used to obtain the results shown

In this work, the insight provided by our sophisticated Full Band Monte Carlo simulator is used to analyze the behavior of state-of-art devices like GaN High Electron Mobility Transistors and Hot Electron Transistors. Chapter 1 is dedicated to the description of the simulation tool used to obtain the results shown in this work. Moreover, a separate section is dedicated the set up of a procedure to validate to the tunneling algorithm recently implemented in the simulator. Chapter 2 introduces High Electron Mobility Transistors (HEMTs), state-of-art devices characterized by highly non linear transport phenomena that require the use of advanced simulation methods. The techniques for device modeling are described applied to a recent GaN-HEMT, and they are validated with experimental measurements. The main techniques characterization techniques are also described, including the original contribution provided by this work. Chapter 3 focuses on a popular technique to enhance HEMTs performance: the down-scaling of the device dimensions. In particular, this chapter is dedicated to lateral scaling and the calculation of a limiting cutoff frequency for a device of vanishing length. Finally, Chapter 4 and Chapter 5 describe the modeling of Hot Electron Transistors (HETs). The simulation approach is validated by matching the current characteristics with the experimental one before variations of the layouts are proposed to increase the current gain to values suitable for amplification. The frequency response of these layouts is calculated, and modeled by a small signal circuit. For this purpose, a method to directly calculate the capacitance is developed which provides a graphical picture of the capacitative phenomena that limit the frequency response in devices. In Chapter 5 the properties of the hot electrons are investigated for different injection energies, which are obtained by changing the layout of the emitter barrier. Moreover, the large signal characterization of the HET is shown for different layouts, where the collector barrier was scaled.
ContributorsSoligo, Riccardo (Author) / Saraniti, Marco (Thesis advisor) / Goodnick, Stephen M (Committee member) / Chowdhury, Srabanti (Committee member) / Thornton, Trevor (Committee member) / Arizona State University (Publisher)
Created2016
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Description
Solar energy is leading in renewable energy sources and the aspects surrounding the efforts to harvest light are gaining importance. One such aspect is increasing the light absorption, where heliotropism comes into play. Heliotropism, the ability to track the sun across the sky, can be integrated with solar cells for

Solar energy is leading in renewable energy sources and the aspects surrounding the efforts to harvest light are gaining importance. One such aspect is increasing the light absorption, where heliotropism comes into play. Heliotropism, the ability to track the sun across the sky, can be integrated with solar cells for more efficient photon collection and other optoelectronic systems. Inspired by plants, which optimize incident sunlight in nature, several researchers have made artificial heliotropic and phototropic systems. This project aims to design, synthesize and characterize a material system and evaluate its application in a phototropic system. A gold nanoparticle (Au NP) incorporated poly(N-isopropylacrylamide) (PNIPAAm) hydrogel was synthesized as a photo-thermo-responsive material in our phototropic system. The Au NPs generate heat from the incident via plasmonic resonance to induce a volume phase change of the thermo-responsive hydrogel PNIPAAm. PNIPAAm shrinks or swells at temperature above or below 32°C. Upon irradiation, the Au NP-PNIPAAm micropillar actuates, specifically bending toward the incident light and precisely following the varying incident angle.

Swelling ratio tests, bending angle tests with a static incident light and bending tests with varying angles were carried out on hydrogel samples with varying Au NP concentrations. Swelling ratios ranging from 1.45 to 2.9 were recorded for pure hydrogel samples and samples with very low Au NP concentrations. Swelling ratios of 2.41 and 3.37 were calculated for samples with low and high concentrations of Au NPs, respectively. A bending of up to 88° was observed in Au NP-hydrogel pillars with a low Au NP concentration with a 90° incident angle. The light tracking performance was assessed by the slope of the pillar Bending angle (response angle) vs. Incident light angle plot. A slope of 1 indicates ideal tracking with top of the pillar being normal to the incident light, maximizing the photon absorption. Slopes of 0.82 and 0.56 were observed for the low and high Au NP concentration samples. The rapid and precise incident light tracking of our system has shown the promise in phototropic applications.
ContributorsGopalakrishna, Hamsini (Author) / He, Ximin (Thesis advisor) / Holman, Zachary C (Committee member) / Wang, Liping (Committee member) / Arizona State University (Publisher)
Created2016