Matching Items (222)
Description
Agrobacterium tumefaciens has the ability to transfer its tumor inducing (Ti) plasmid into plant cells. In the last decade, agroinfiltration of Nicotiana benthamiana plants has shown promising results for recombinant protein production. However, A. tumefaciens produce endotoxins in the form of lipopolysaccharides (LPS), a component of their outer membrane that can induce organ failure and septic shock. Therefore, we aimed to detoxify A. tumefaciens by modifying their Lipid A structure, the toxic region of LPS, via mutating the genes for lipid A biosynthesis. Two mutant strains of A. tumefaciens were infiltrated into N. benthamiana stems to test for tumor formation to ensure that the detoxifying process did not compromise the ability of gene transfer. Our results demonstrated that A. tumefaciens with both single and double mutations retained the ability to form tumors. Thus, these mutants can be utilized to generate engineered A. tumefaciens strains for the production of plant-based pharmaceuticals with low endotoxicity.
ContributorsHaseefa, Fathima (Author) / Chen, Qiang (Thesis director) / Mason, Hugh (Committee member) / Hurtado, Jonathan (Committee member) / School of Life Sciences (Contributor) / Barrett, The Honors College (Contributor)
Created2018-05
Description
Transition metal dichalcogenides (TMDs) are a family of layered crystals with the chemical formula MX2 (M = W, Nb, Mo, Ta and X = S, Se, Te). These TMDs exhibit many fascinating optical and electronic properties making them strong candidates for high-end electronics, optoelectronic application, and spintronics. The layered structure of TMDs allows the crystal to be mechanically exfoliated to a monolayer limit, where bulk-scale properties no longer apply and quantum effects arise, including an indirect-to-direct bandgap transition. Controllably tuning the electronic properties of TMDs like WSe2 is therefore a highly attractive prospect achieved by substitutionally doping the metal atoms to enable n- and p-type doping at various concentrations, which can ultimately lead to more effective electronic devices due to increased charge carriers, faster transmission times and possibly new electronic and optical properties to be probed. WSe2 is expected to exhibit the largest spin splitting size and spin-orbit coupling, which leads to exciting potential applications in spintronics over its similar TMD counterparts, which can be controlled through electrical doping. Unfortunately, the well-established doping technique of ion implantation is unable to preserve the crystal quality leading to a major roadblock for the electronics applications of tungsten diselenide. Synthesizing WSe2 via chemical vapor transport (CVT) and flux method have been previously established, but controllable p-type (niobium) doping WSe2 in low concentrations ranges (<1 at %) by CVT methods requires further experimentation and study. This work studies the chemical vapor transport synthesis of doped-TMD W1-xNbxSe2 through characterization techniques of X-ray Diffraction, Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy, and X-ray Photoelectron Spectroscopy techniques. In this work, it is observed that excess selenium transport does not enhance the controllability of niobium doping in WSe2, and that tellurium tetrachloride (TeCl4) transport has several barriers in successfully incorporating niobium into WSe2.
ContributorsRuddick, Hayley (Author) / Tongay, Sefaattin (Thesis director) / Jiao, Yang (Committee member) / Barrett, The Honors College (Contributor) / Materials Science and Engineering Program (Contributor)
Created2024-05