Matching Items (54)
Description
Semiconductor nanowires are featured by their unique one-dimensional structure which makes them promising for small scale electronic and photonic device applications. Among them, III-V material nanowires are particularly outstanding due to their good electronic properties. In bulk, these materials reveal electron mobility much higher than conventional silicon based devices, for example at room temperature, InAs field effect transistor (FET) has electron mobility of 40,000 cm2/Vs more than 10 times of Si FET. This makes such materials promising for high speed nanowire FETs. With small bandgap, such as 0.354 eV for InAs and 1.52 eV for GaAs, it does not need high voltage to turn on such devices which leads to low power consumption devices. Another feature of direct bandgap allows their applications of optoelectronic devices such as avalanche photodiodes. However, there are challenges to face up. Due to their large surface to volume ratio, nanowire devices typically are strongly affected by the surface states. Although nanowires can be grown into single crystal structure, people observe crystal defects along the wires which can significantly affect the performance of devices. In this work, FETs made of two types of III-V nanowire, GaAs and InAs, are demonstrated. These nanowires are grown by catalyst-free MOCVD growth method. Vertically nanowires are transferred onto patterned substrates for coordinate calibration. Then electrodes are defined by e-beam lithography followed by deposition of contact metals. Prior to metal deposition, however, the substrates are dipped in ammonium hydroxide solution to remove native oxide layer formed on nanowire surface. Current vs. source-drain voltage with different gate bias are measured at room temperature. GaAs nanowire FETs show photo response while InAs nanowire FETs do not show that. Surface passivation is performed on GaAs FETs by using ammonium surfide solution. The best results on current increase is observed with around 20-30 minutes chemical treatment time. Gate response measurements are performed at room temperature, from which field effect mobility as high as 1490 cm2/Vs is extracted for InAs FETs. One major contributor for this is stacking faults defect existing along nanowires. For InAs FETs, thermal excitations observed from temperature dependent results which leads us to investigate potential barriers.
ContributorsLiang, Hanshuang (Author) / Yu, Hongbin (Thesis advisor) / Ferry, David (Committee member) / Tracy, Clarence (Committee member) / Arizona State University (Publisher)
Created2011
Description
Biological membranes are critical to cell sustainability by selectively permeating polar molecules into the intracellular space and providing protection to the interior organelles. Biomimetic membranes (model cell membranes) are often used to fundamentally study the lipid bilayer backbone structure of the biological membrane. Lipid bilayer membranes are often supported using inorganic materials in an effort to improve membrane stability and for application to novel biosensing platforms. Published literature has shown that a variety of dense inorganic materials with various surface properties have been investigated for the study of biomimetic membranes. However, literature does not adequately address the effect of porous materials or supports with varying macroscopic geometries on lipid bilayer membrane behavior. The objective of this dissertation is to present a fundamental study on the synthesis of lipid bilayer membranes supported by novel inorganic supports in an effort to expand the number of available supports for biosensing technology. There are two fundamental areas covered including: (1) synthesis of lipid bilayer membranes on porous inorganic materials and (2) synthesis and characterization of cylindrically supported lipid bilayer membranes. The lipid bilayer membrane formation behavior on various porous supports was studied via direct mass adsorption using a quartz crystal microbalance. Experimental results demonstrate significantly different membrane formation behaviors on the porous inorganic supports. A lipid bilayer membrane structure was formed only on SiO2 based surfaces (dense SiO2 and silicalite, basic conditions) and gamma-alumina (acidic conditions). Vesicle monolayer adsorption was observed on gamma-alumina (basic conditions), and yttria stabilized zirconia (YSZ) of varying roughness. Parameters such as buffer pH, surface chemistry and surface roughness were found to have a significant impact on the vesicle adsorption kinetics. Experimental and modeling work was conducted to study formation and characterization of cylindrically supported lipid bilayer membranes. A novel sensing technique (long-period fiber grating refractometry) was utilized to measure the formation mechanism of lipid bilayer membranes on an optical fiber. It was found that the membrane formation kinetics on the fiber was similar to its planar SiO2 counterpart. Fluorescence measurements verified membrane transport behavior and found that characterization artifacts affected the measured transport behavior.
ContributorsEggen, Carrie (Author) / Lin, Jerry Y.S. (Thesis advisor) / Dai, Lenore (Committee member) / Rege, Kaushal (Committee member) / Thornton, Trevor (Committee member) / Vogt, Bryan (Committee member) / Arizona State University (Publisher)
Created2011
Description
The first part describes Metal Semiconductor Field Effect Transistor (MESFET) based fundamental analog building blocks designed and fabricated in a single poly, 3-layer metal digital CMOS technology utilizing fully depletion mode MESFET devices. DC characteristics were measured by varying the power supply from 2.5V to 5.5V. The measured DC transfer curves of amplifiers show good agreement with the simulated ones with extracted models from the same process. The accuracy of the current mirror showing inverse operation is within ±15% for the current from 0 to 1.5mA with the power supply from 2.5 to 5.5V. The second part presents a low-power image recognition system with a novel MESFET device fabricated on a CMOS substrate. An analog image recognition system with power consumption of 2.4mW/cell and a response time of 6µs is designed, fabricated and characterized. The experimental results verified the accuracy of the extracted SPICE model of SOS MESFETs. The response times of 4µs and 6µs for one by four and one by eight arrays, respectively, are achieved with the line recognition. Each core cell for both arrays consumes only 2.4mW. The last part presents a CMOS low-power transceiver in MICS band is presented. The LNA core has an integrated mixer in a folded configuration. The baseband strip consists of a pseudo differential MOS-C band-pass filter achieving demodulation of 150kHz-offset BFSK signals. The SRO is used in a wakeup RX for the wake-up signal reception. The all digital frequency-locked loop drives a class AB power amplifier in a transmitter. The sensitivity of -85dBm in the wakeup RX is achieved with the power consumption of 320µW and 400µW at the data rates of 100kb/s and 200kb/s from 1.8V, respectively. The sensitivities of -70dBm and -98dBm in the data-link RX are achieved with NF of 40dB and 11dB at the data rate of 100kb/s while consuming only 600µW and 1.5mW at 1.2V and 1.8V, respectively.
ContributorsKim, Sung (Author) / Bakkaloglu, Bertan (Thesis advisor) / Christen, Jennifer Blain (Committee member) / Cao, Yu (Committee member) / Thornton, Trevor (Committee member) / Arizona State University (Publisher)
Created2011
Description
Proteins are a fundamental unit in biology. Although proteins have been extensively studied, there is still much to investigate. The mechanism by which proteins fold into their native state, how evolution shapes structural dynamics, and the dynamic mechanisms of many diseases are not well understood. In this thesis, protein folding is explored using a multi-scale modeling method including (i) geometric constraint based simulations that efficiently search for native like topologies and (ii) reservoir replica exchange molecular dynamics, which identify the low free energy structures and refines these structures toward the native conformation. A test set of eight proteins and three ancestral steroid receptor proteins are folded to 2.7Å all-atom RMSD from their experimental crystal structures. Protein evolution and disease associated mutations (DAMs) are most commonly studied by in silico multiple sequence alignment methods. Here, however, the structural dynamics are incorporated to give insight into the evolution of three ancestral proteins and the mechanism of several diseases in human ferritin protein. The differences in conformational dynamics of these evolutionary related, functionally diverged ancestral steroid receptor proteins are investigated by obtaining the most collective motion through essential dynamics. Strikingly, this analysis shows that evolutionary diverged proteins of the same family do not share the same dynamic subspace. Rather, those sharing the same function are simultaneously clustered together and distant from those functionally diverged homologs. This dynamics analysis also identifies 77% of mutations (functional and permissive) necessary to evolve new function. In silico methods for prediction of DAMs rely on differences in evolution rate due to purifying selection and therefore the accuracy of DAM prediction decreases at fast and slow evolvable sites. Here, we investigate structural dynamics through computing the contribution of each residue to the biologically relevant fluctuations and from this define a metric: the dynamic stability index (DSI). Using DSI we study the mechanism for three diseases observed in the human ferritin protein. The T30I and R40G DAMs show a loss of dynamic stability at the C-terminus helix and nearby regulatory loop, agreeing with experimental results implicating the same regulatory loop as a cause in cataracts syndrome.
ContributorsGlembo, Tyler J (Author) / Ozkan, Sefika B (Thesis advisor) / Thorpe, Michael F (Committee member) / Ros, Robert (Committee member) / Kumar, Sudhir (Committee member) / Shumway, John (Committee member) / Arizona State University (Publisher)
Created2011
Description
Multi-task learning (MTL) aims to improve the generalization performance (of the resulting classifiers) by learning multiple related tasks simultaneously. Specifically, MTL exploits the intrinsic task relatedness, based on which the informative domain knowledge from each task can be shared across multiple tasks and thus facilitate the individual task learning. It is particularly desirable to share the domain knowledge (among the tasks) when there are a number of related tasks but only limited training data is available for each task. Modeling the relationship of multiple tasks is critical to the generalization performance of the MTL algorithms. In this dissertation, I propose a series of MTL approaches which assume that multiple tasks are intrinsically related via a shared low-dimensional feature space. The proposed MTL approaches are developed to deal with different scenarios and settings; they are respectively formulated as mathematical optimization problems of minimizing the empirical loss regularized by different structures. For all proposed MTL formulations, I develop the associated optimization algorithms to find their globally optimal solution efficiently. I also conduct theoretical analysis for certain MTL approaches by deriving the globally optimal solution recovery condition and the performance bound. To demonstrate the practical performance, I apply the proposed MTL approaches on different real-world applications: (1) Automated annotation of the Drosophila gene expression pattern images; (2) Categorization of the Yahoo web pages. Our experimental results demonstrate the efficiency and effectiveness of the proposed algorithms.
ContributorsChen, Jianhui (Author) / Ye, Jieping (Thesis advisor) / Kumar, Sudhir (Committee member) / Liu, Huan (Committee member) / Xue, Guoliang (Committee member) / Arizona State University (Publisher)
Created2011
Description
Sparsity has become an important modeling tool in areas such as genetics, signal and audio processing, medical image processing, etc. Via the penalization of l-1 norm based regularization, the structured sparse learning algorithms can produce highly accurate models while imposing various predefined structures on the data, such as feature groups or graphs. In this thesis, I first propose to solve a sparse learning model with a general group structure, where the predefined groups may overlap with each other. Then, I present three real world applications which can benefit from the group structured sparse learning technique. In the first application, I study the Alzheimer's Disease diagnosis problem using multi-modality neuroimaging data. In this dataset, not every subject has all data sources available, exhibiting an unique and challenging block-wise missing pattern. In the second application, I study the automatic annotation and retrieval of fruit-fly gene expression pattern images. Combined with the spatial information, sparse learning techniques can be used to construct effective representation of the expression images. In the third application, I present a new computational approach to annotate developmental stage for Drosophila embryos in the gene expression images. In addition, it provides a stage score that enables one to more finely annotate each embryo so that they are divided into early and late periods of development within standard stage demarcations. Stage scores help us to illuminate global gene activities and changes much better, and more refined stage annotations improve our ability to better interpret results when expression pattern matches are discovered between genes.
ContributorsYuan, Lei (Author) / Ye, Jieping (Thesis advisor) / Wang, Yalin (Committee member) / Xue, Guoliang (Committee member) / Kumar, Sudhir (Committee member) / Arizona State University (Publisher)
Created2013
Description
The partially-depleted (PD) silicon Metal Semiconductor Field Effect Transistor (MESFET) is becoming more and more attractive for analog and RF applications due to its high breakdown voltage. Compared to conventional CMOS high voltage transistors, the silicon MESFET can be fabricated in commercial standard Silicon-on-Insulator (SOI) CMOS foundries without any change to the process. The transition frequency of the device is demonstrated to be 45GHz, which makes the MESFET suitable for applications in high power RF power amplifier designs. Also, high breakdown voltage and low turn-on resistance make it the ideal choice for switches in the switching regulator designs. One of the anticipated applications of the MESFET is for the pass device for a low dropout linear regulator. Conventional NMOS and PMOS linear regulators suffer from high dropout voltage, low bandwidth and poor stability issues. In contrast, the N-MESFET pass transistor can provide an ultra-low dropout voltage and high bandwidth without the need for an external compensation capacitor to ensure stability. In this thesis, the design theory and problems of the conventional linear regulators are discussed. N-MESFET low dropout regulators are evaluated and characterized. The error amplifier used a folded cascode architecture with gain boosting. The source follower topology is utilized as the buffer to sink the gate leakage current from the MESFET. A shunt-feedback transistor is added to reduce the output impedance and provide the current adaptively. Measurement results show that the dropout voltage is less than 150 mV for a 1A load current at 1.8V output. Radiation measurements were done for discrete MESFET and fully integrated LDO regulators, which demonstrate their radiation tolerance ability for aerospace applications.
ContributorsChen, Bo (Author) / Thornton, Trevor (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
Sliding-Mode Control (SMC) has several benefits over traditional Proportional-Integral-Differential (PID) control in terms of fast transient response, robustness to parameter and component variations, and low sensitivity to loop disturbances. An All-Digital Sliding-Mode (ADSM) controlled DC-DC converter, utilizing single-bit oversampled frequency domain digitizers is proposed. In the proposed approach, feedback and reference digitizing Analog-to-Digital Converters (ADC) are based on a single-bit, first order Sigma-Delta frequency to digital converter, running at 32MHz over-sampling rate. The ADSM regulator achieves 1% settling time in less than 5uSec for a load variation of 600mA. The sliding-mode controller utilizes a high-bandwidth hysteretic differentiator and an integrator to perform the sliding control law in digital domain. The proposed approach overcomes the steady state error (or DC offset), and limits the switching frequency range, which are the two common problems associated with sliding-mode controllers. The IC is designed and fabricated on a 0.35um CMOS process occupying an active area of 2.72mm-squared. Measured peak efficiency is 83%.
ContributorsDashtestani, Ahmad (Author) / Bakkaloglu, Bertan (Thesis advisor) / Thornton, Trevor (Committee member) / Song, Hongjiang (Committee member) / Kiaei, Sayfe (Committee member) / Arizona State University (Publisher)
Created2013
Description
The entire history of HIV-1 is hidden in its ten thousand bases, where information regarding its evolutionary traversal through the human population can only be unlocked with fine-scale sequence analysis. Measurable footprints of mutation and recombination have imparted upon us a wealth of knowledge, from multiple chimpanzee-to-human transmissions to patterns of neutralizing antibody and drug resistance. Extracting maximum understanding from such diverse data can only be accomplished by analyzing the viral population from many angles. This body of work explores two primary aspects of HIV sequence evolution, point mutation and recombination, through cross-sectional (inter-individual) and longitudinal (intra-individual) investigations, respectively. Cross-sectional Analysis: The role of Haiti in the subtype B pandemic has been hotly debated for years; while there have been many studies, up to this point, no one has incorporated the well-known mechanism of retroviral recombination into their biological model. Prior to the use of recombination detection, multiple analyses produced trees where subtype B appears to have first entered Haiti, followed by a jump into the rest of the world. The results presented here contest the Haiti-first theory of the pandemic and instead suggest simultaneous entries of subtype B into Haiti and the rest of the world. Longitudinal Analysis: Potential N-linked glycosylation sites (PNGS) are the most evolutionarily dynamic component of one of the most evolutionarily dynamic proteins known to date. While the number of mutations associated with the increase or decrease of PNGS frequency over time is high, there are a set of relatively stable sites that persist within and between longitudinally sampled individuals. Here, I identify the most conserved stable PNGSs and suggest their potential roles in host-virus interplay. In addition, I have identified, for the first time, what may be a gp-120-based environmental preference for N-linked glycosylation sites.
ContributorsHepp, Crystal Marie, 1981- (Author) / Rosenberg, Michael S. (Thesis advisor) / Hedrick, Philip (Committee member) / Escalante, Ananias (Committee member) / Kumar, Sudhir (Committee member) / Arizona State University (Publisher)
Created2013
Description
Power management plays a very important role in the current electronics industry. Battery powered and handheld applications require novel power management techniques to extend the battery life. Most systems have multiple voltage regulators to provide power sources to the different circuit blocks and/or sub-systems. Some of these voltage regulators are low dropout regulators (LDOs) which typically require output capacitors in the range of 1's to 10's of µF. The necessity of output capacitors occupies valuable board space and can add additional integrated circuit (IC) pin count. A high IC pin count can restrict LDOs for system-on-chip (SoC) solutions. The presented research gives the user an option with regard to the external capacitor; the output capacitor can range from 0 - 1µF for a stable response. In general, the larger the output capacitor, the better the transient response. Because the output capacitor requirement is such a wide range, the LDO presented here is ideal for any application, whether it be for a SoC solution or stand-alone LDO that desires a filtering capacitor for optimal transient performance. The LDO architecture and compensation scheme provide a stable output response from 1mA to 200mA with output capacitors in the range of 0 - 1µF. A 2.5V, 200mA any-cap LDO was fabricated in a proprietary 1.5µm BiCMOS process, consuming 200µA of ground pin current (at 1mA load) with a dropout voltage of 250mV. Experimental results show that the proposed any-cap LDO exceeds transient performance and output capacitor requirements compared to previously published work. The architecture also has excellent line and load regulation and less sensitive to process variation. Therefore, the presented any-cap LDO is ideal for any application with a maximum supply rail of 5V.
ContributorsTopp, Matthew (Author) / Bakkaloglu, Bertan (Thesis advisor) / Thornton, Trevor (Committee member) / Ozev, Sule (Committee member) / Arizona State University (Publisher)
Created2012