Matching Items (16)
Description
Recently a new materials platform consisting of semiconductors grown on GaSb and InAs substrates with lattice constants close to 6.1 A was proposed by our group for various electronic and optoelectronic applications. This materials platform consists of both II-VI (MgZnCdHg)(SeTe) and III-V (InGaAl)(AsSb) compound semiconductors, which have direct bandgaps spanning the entire energy spectrum from far-IR (~0 eV) up to UV (~3.4 eV). The broad range of bandgaps and material properties make it very attractive for a wide range of applications in optoelectronics, such as solar cells, laser diodes, light emitting diodes, and photodetectors. Moreover, this novel materials system potentially offers unlimited degrees of freedom for integration of electronic and optoelectronic devices onto a single substrate while keeping the best possible materials quality with very low densities of misfit dislocations. This capability is not achievable with any other known lattice-matched semiconductors on any available substrate. In the 6.1-A materials system, the semiconductors ZnTe and GaSb are almost perfectly lattice-matched with a lattice mismatch of only 0.13%. Correspondingly, it is expected that high quality ZnTe/GaSb and GaSb/ZnTe heterostructures can be achieved with very few dislocations generated during growth. To fulfill the task, their MBE growth and material properties are carefully investigated. High quality ZnTe layers grown on various III-V substrates and GaSb grown on ZnTe are successfully achieved using MBE. It is also noticed that ZnTe and GaSb have a type-I band-edge alignment with large band offsets (delta_Ec=0.934 eV, delta_Ev=0.6 eV), which provides strong confinement for both electrons and holes. Furthermore, a large difference in refractive index is found between ZnTe and GaSb (2.7 and 3.9, respectively, at 0.7 eV), leading to excellent optical confinement of the guided optical modes in planar semiconductor lasers or distributed Bragg reflectors (DBR) for vertical-cavity surface-emitting lasers. Therefore, GaSb/ZnTe double-heterostructure and ZnTe/GaSb DBR structure are suitable for use in light emitting devices. In this thesis work, experimental demonstration of these structures with excellent structural and optical properties is reported. During the exploration on the properties of various ZnTe heterostructures, it is found that residual tensile strains exist in the thick ZnTe epilayers when they are grown on GaAs, InP, InAs and GaSb substrates. The presence of tensile strains is due to the difference in thermal expansion coefficients between the epilayers and the substrates. The defect densities in these ZnTe layers become lower as the ZnTe layer thickness increases. Growth of high quality GaSb on ZnTe can be achieved using a temperature ramp during growth. The influence of temperature ramps with different ramping rates in the optical properties of GaSb layer is studied, and the samples grown with a temperature ramp from 360 to 470 C at a rate of 33 C/min show the narrowest bound exciton emission peak with a full width at half maximum of 15 meV. ZnTe/GaSb DBR structures show excellent reflectivity properties in the mid-infrared range. A peak reflectance of 99% with a wide stopband of 480 nm centered at 2.5 um is measured from a ZnTe/GaSb DBR sample of only 7 quarter-wavelength pairs.
ContributorsFan, Jin (Author) / Zhang, Yong-Hang (Thesis advisor) / Smith, David (Committee member) / Yu, Hongbin (Committee member) / Menéndez, Jose (Committee member) / Johnson, Shane (Committee member) / Arizona State University (Publisher)
Created2012
Description
One of the main goals of computer architecture design is to improve performance without much increase in the power consumption. It cannot be achieved by adding increasingly complex intelligent schemes in the hardware, since they will become increasingly less power-efficient. Therefore, parallelism comes up as the solution. In fact, the irrevocable trend of computer design in near future is still to keep increasing the number of cores while reducing the operating frequency. However, it is not easy to scale number of cores. One important challenge is that existing cores consume too much power. Another challenge is that cache-based memory hierarchy poses a serious limitation due to the rapidly increasing demand of area and power for coherence maintenance.
In this dissertation, opportunities to resolve the aforementioned issues were explored in two aspects.
Firstly, the possibility of removing hardware cache altogether, and replacing it with scratchpad memory with software management was explored. Scratchpad memory consumes much less power than caches. However, as data management logic is completely shifted to Software, how to reduce software overhead is challenging. This thesis presents techniques to manage scratchpad memory judiciously by exploiting application semantics and knowledge of data access patterns, thereby enabling optimization of data movement across the memory hierarchy. Experimental results show that the optimization was able to reduce stack data management overhead by 13X, produce better code mapping in more than 80% of the case, and improve performance by 83% in heap management.
Secondly, the possibility of using software branch hinting to replace hardware branch prediction to completely eliminate power consumption on corresponding hardware components was explored. As branch predictor is removed from hardware, software logic is responsible for reducing branch penalty. Techniques to minimize the branch penalty by optimizing branch hint placement were proposed, which can reduce branch penalty by 35.4% over the state-of-the-art.
In this dissertation, opportunities to resolve the aforementioned issues were explored in two aspects.
Firstly, the possibility of removing hardware cache altogether, and replacing it with scratchpad memory with software management was explored. Scratchpad memory consumes much less power than caches. However, as data management logic is completely shifted to Software, how to reduce software overhead is challenging. This thesis presents techniques to manage scratchpad memory judiciously by exploiting application semantics and knowledge of data access patterns, thereby enabling optimization of data movement across the memory hierarchy. Experimental results show that the optimization was able to reduce stack data management overhead by 13X, produce better code mapping in more than 80% of the case, and improve performance by 83% in heap management.
Secondly, the possibility of using software branch hinting to replace hardware branch prediction to completely eliminate power consumption on corresponding hardware components was explored. As branch predictor is removed from hardware, software logic is responsible for reducing branch penalty. Techniques to minimize the branch penalty by optimizing branch hint placement were proposed, which can reduce branch penalty by 35.4% over the state-of-the-art.
ContributorsLu, Jing (Author) / Shrivastava, Aviral (Thesis advisor) / Sarjoughian, Hessam S. (Committee member) / Wu, Carole-Jean (Committee member) / Doupe, Adam (Committee member) / Arizona State University (Publisher)
Created2019
Description
In this dissertation research, conventional and aberration-corrected (AC) transmission electron microscopy (TEM) techniques were used to evaluate the structural and compositional properties of thin-film semiconductor compounds/alloys grown by molecular beam epitaxy for infrared photo-detection. Imaging, diffraction and spectroscopy techniques were applied to TEM specimens in cross-section geometry to extract information about extended structural defects, chemical homogeneity and interface abruptness. The materials investigated included InAs1-xBix alloys grown on GaSb (001) substrates, InAs/InAs1-xSbx type-II superlattices grown on GaSb (001) substrates, and CdTe-based thin-film structures grown on InSb (001) substrates.
The InAsBi dilute-bismide epitaxial films were grown on GaSb (001) substrates at relatively low growth temperatures. The films were mostly free of extended defects, as observed in diffraction-contrast images, but the incorporation of bismuth was not homogeneous, as manifested by the lateral Bi-composition modulation and Bi-rich surface droplets. Successful Bi incorporation into the InAs matrix was confirmed using lattice expansion measurements obtained from misfit strain analysis of high-resolution TEM (HREM) images.
Analysis of averaged intensity line profiles in HREM and scanning TEM (STEM) images of the Ga-free InAs/InAs1-xSbx type-II strained superlattices indicated slight variations in layer thickness across the superlattice stack. The interface abruptness was evaluated using misfit strain analysis of AC-STEM images, electron energy-loss spectroscopy and 002 dark-field imaging. The compositional profiles of antimony across the superlattices were fitted to a segregation model and revealed a strong antimony segregation probability.
The CdTe/MgxCd1-xTe double-heterostructures were grown with Cd overflux in a dual-chamber molecular beam epitaxy with an ultra-high vacuum transfer loadlock. Diffraction-contrast images showed that the growth temperature had a strong impact on the structural quality of the epilayers. Very abrupt CdTe/InSb interfaces were obtained for epilayers grown at the optimum temperature of 265 °C, and high-resolution imaging using AC-STEM revealed an interfacial transition region with a width of a few monolayers and smaller lattice spacing than either CdTe or InSb.
The InAsBi dilute-bismide epitaxial films were grown on GaSb (001) substrates at relatively low growth temperatures. The films were mostly free of extended defects, as observed in diffraction-contrast images, but the incorporation of bismuth was not homogeneous, as manifested by the lateral Bi-composition modulation and Bi-rich surface droplets. Successful Bi incorporation into the InAs matrix was confirmed using lattice expansion measurements obtained from misfit strain analysis of high-resolution TEM (HREM) images.
Analysis of averaged intensity line profiles in HREM and scanning TEM (STEM) images of the Ga-free InAs/InAs1-xSbx type-II strained superlattices indicated slight variations in layer thickness across the superlattice stack. The interface abruptness was evaluated using misfit strain analysis of AC-STEM images, electron energy-loss spectroscopy and 002 dark-field imaging. The compositional profiles of antimony across the superlattices were fitted to a segregation model and revealed a strong antimony segregation probability.
The CdTe/MgxCd1-xTe double-heterostructures were grown with Cd overflux in a dual-chamber molecular beam epitaxy with an ultra-high vacuum transfer loadlock. Diffraction-contrast images showed that the growth temperature had a strong impact on the structural quality of the epilayers. Very abrupt CdTe/InSb interfaces were obtained for epilayers grown at the optimum temperature of 265 °C, and high-resolution imaging using AC-STEM revealed an interfacial transition region with a width of a few monolayers and smaller lattice spacing than either CdTe or InSb.
ContributorsLu, Jing (Author) / Smith, David J. (Thesis advisor) / Alford, Terry L. (Committee member) / Crozier, Peter A. (Committee member) / McCartney, Martha R. (Committee member) / Zhang, Yong-Hang (Committee member) / Arizona State University (Publisher)
Created2017
Description
A CdZnTe/MgCdTe double-heterostructure (DH) consisting of a 3 μm thick Cd0.9946 Zn0.0054Te middle layer that is lattice-matched to an InSb substrate has been grown using molecular beam epitaxy. A long carrier lifetime of 3.4 × 102 ns has been demonstrated at room temperature, which is approximately three times as long as that of a CdTe/MgCdTe DH with identical layer thickness. This substantial improvement is due to the reduction in misfit dislocation density in the CdZnTe alloy. In contrast, a CdTe/MgCdTe DH with 3 μm thick CdTe layer grown on an InSb substrate exhibits a strain relaxation of ∼30%, which leads to a wider x-ray diffraction peak, a weaker integrated photoluminescence intensity, and a shorter minority carrier lifetime of 1.0 × 102 ns. These findings indicate that CdZnTe lattice-matched to InSb has great potential as applied to high-efficiency solar cells as well as virtual substrates for high-performance large-area HgCdTe focal plane arrays.
ContributorsLiu, Shi (Author) / Zhao, Xin-Hao (Author) / Campbell, Calli (Author) / DiNezza, Michael J. (Author) / Zhao, Yuan (Author) / Zhang, Yong-Hang (Author) / Ira A. Fulton Schools of Engineering (Contributor)
Created2015-01-01
Description
This paper reports the molecular beam epitaxial growth and characterization of high-reflectivity and broad-bandwidth distributed Bragg reflectors (DBRs) made of ZnTe/GaSb quarter-wavelength (lambda/4) layers for optoelectronic applications in the midwave infrared spectral range (2-5 mu m). A series of ZnTe/GaSb DBRs has been successfully grown on GaSb (001) substrates using molecular beam epitaxy (MBE). During the MBE growth, a temperature ramp was applied to the initial growth of GaSb layers on ZnTe to protect the ZnTe underneath from damage due to thermal evaporation. Post-growth characterization using high-resolution x-ray diffraction, atomic force microscopy, and transmission electron microscopy reveals smooth surface morphology, low defect density, and coherent interfaces. Reflectance spectroscopy results show that a DBR sample of seven lambda/4 pairs has a peak reflectance as high as 99.0% centered at 2.56 mu m with a bandwidth of 517 nm.
ContributorsFan, Jin (Author) / Liu, Xinyu (Author) / Ouyang, Lu (Author) / Pimpinella, Richard E. (Author) / Dobrowolska, Margaret (Author) / Furdyna, Jacek K. (Author) / Smith, David (Author) / Zhang, Yong-Hang (Author) / Ira A. Fulton Schools of Engineering (Contributor)
Created2013-10-28
ContributorsLiu, Xinyu (Author) / Smith, David J. (Author) / Cao, Helin (Author) / Chen, Yong P. (Author) / Fan, Jin (Author) / Zhang, Yong-Hang (Author) / Pimpinella, Richard E. (Author) / Dobrowolska, Malgorzata (Author) / Furdyna, Jacek K. (Author)
Created2012
ContributorsFan, Jin (Author) / Liu, Xinyu (Author) / Furdyna, Jacek K. (Author) / Zhang, Yong-Hang (Author)
Created2012
ContributorsLiu, Shi (Author) / Li, Hua (Author) / Cellek, Oray O. (Author) / Ding, Ding (Author) / Shen, Xiao-Meng (Author) / Lin, Zhi-Yuan (Author) / Steenbergen, Elizabeth H. (Author) / Fan, Jin (Author) / He, Zhao-Yu (Author) / Lu, Jing (Author) / Johnson, Shane R. (Author) / Smith, David J. (Author) / Zhang, Yong-Hang (Author)
Created2013
ContributorsFan, Jin (Author) / Liu, Xinyu (Author) / Ouyang, Lu (Author) / Pimpinella, Richard E. (Author) / Dobrowolska, Margaret (Author) / Furdyna, Jacek K. (Author) / Smith, David J. (Author) / Zhang, Yong-Hang (Author)
Created2013
ContributorsLiu, Shi (Author) / Zhao, Xin-Hao (Author) / Campbell, Calli M. (Author) / DiNezza, Michael J. (Author) / Zhao, Yuan (Author) / Zhang, Yong-Hang (Author)
Created2015