Matching Items (212)
Filtering by
- Resource Type: Text
Description
The rates of anxiety, depression, and attempted suicide for transgender individuals are extremely elevated relative to the general population. Yet, little research has been conducted about the transgender population regarding social transition (an individual presenting as their authentic/true gender, one different than the gender they were assigned at birth, in the context of everyday life) and parental acceptance. Both of which have been shown to impact the mental health of transgender individuals. The purposes of this study were: (1) To characterize a sample of transgender adults on their age of awareness of their authentic gender identity and their age of social transition. (2) Examine whether age of social transition, (3) parental acceptance, and (4) the gap in time between age of awareness and age of social transition (awareness-transition gap) were related to mental health. (5) Examine whether parental acceptance was related to age of social transition or to awareness-transition gap. (6) Examine whether age of social transition or awareness-transition gap interact with parental acceptance as correlates of mental health. The sample consisted of 115 transgender adults, ages 18 to 64. Measures were separated into 7 subheadings: demographics, transgender
on-cisgender identity, age of awareness, age of social transition, primary caregiver acceptance, secondary caregiver acceptance, and mental health. Hypotheses were partially supported for age of social transition with mental health, parental acceptance with mental health, and awareness-transition gap with parental acceptance. This study investigated under studied concepts of social transition and parental acceptance that appear to have an effect on the mental health of transgender adults.
on-cisgender identity, age of awareness, age of social transition, primary caregiver acceptance, secondary caregiver acceptance, and mental health. Hypotheses were partially supported for age of social transition with mental health, parental acceptance with mental health, and awareness-transition gap with parental acceptance. This study investigated under studied concepts of social transition and parental acceptance that appear to have an effect on the mental health of transgender adults.
ContributorsRosenberg, Beth Ann (Author) / Gonzales, Nancy (Thesis director) / Saenz, Delia (Committee member) / Davis, Mary (Committee member) / Department of Psychology (Contributor) / Sanford School of Social and Family Dynamics (Contributor) / College of Public Service and Community Solutions (Contributor) / Barrett, The Honors College (Contributor)
Created2018-05
Description
Transition metal dichalcogenides (TMDs) are a family of layered crystals with the chemical formula MX2 (M = W, Nb, Mo, Ta and X = S, Se, Te). These TMDs exhibit many fascinating optical and electronic properties making them strong candidates for high-end electronics, optoelectronic application, and spintronics. The layered structure of TMDs allows the crystal to be mechanically exfoliated to a monolayer limit, where bulk-scale properties no longer apply and quantum effects arise, including an indirect-to-direct bandgap transition. Controllably tuning the electronic properties of TMDs like WSe2 is therefore a highly attractive prospect achieved by substitutionally doping the metal atoms to enable n- and p-type doping at various concentrations, which can ultimately lead to more effective electronic devices due to increased charge carriers, faster transmission times and possibly new electronic and optical properties to be probed. WSe2 is expected to exhibit the largest spin splitting size and spin-orbit coupling, which leads to exciting potential applications in spintronics over its similar TMD counterparts, which can be controlled through electrical doping. Unfortunately, the well-established doping technique of ion implantation is unable to preserve the crystal quality leading to a major roadblock for the electronics applications of tungsten diselenide. Synthesizing WSe2 via chemical vapor transport (CVT) and flux method have been previously established, but controllable p-type (niobium) doping WSe2 in low concentrations ranges (<1 at %) by CVT methods requires further experimentation and study. This work studies the chemical vapor transport synthesis of doped-TMD W1-xNbxSe2 through characterization techniques of X-ray Diffraction, Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy, and X-ray Photoelectron Spectroscopy techniques. In this work, it is observed that excess selenium transport does not enhance the controllability of niobium doping in WSe2, and that tellurium tetrachloride (TeCl4) transport has several barriers in successfully incorporating niobium into WSe2.
ContributorsRuddick, Hayley (Author) / Tongay, Sefaattin (Thesis director) / Jiao, Yang (Committee member) / Barrett, The Honors College (Contributor) / Materials Science and Engineering Program (Contributor)
Created2024-05