Matching Items (32)
Description
A primary motivation of research in photovoltaic technology is to obtain higher efficiency photovoltaic devices at reduced cost of production so that solar electricity can be cost competitive. The majority of photovoltaic technologies are based on p-n junction, with efficiency potential being much lower than the thermodynamic limits of individual technologies and thereby providing substantial scope for further improvements in efficiency. The thesis explores photovoltaic devices using new physical processes that rely on thin layers and are capable of attaining the thermodynamic limit of photovoltaic technology. Silicon heterostructure is one of the candidate technologies in which thin films induce a minority carrier collecting junction in silicon and the devices can achieve efficiency close to the thermodynamic limits of silicon technology. The thesis proposes and experimentally establishes a new theory explaining the operation of silicon heterostructure solar cells. The theory will assist in identifying the optimum properties of thin film materials for silicon heterostructure and help in design and characterization of the devices, along with aiding in developing new devices based on this technology. The efficiency potential of silicon heterostructure is constrained by the thermodynamic limit (31%) of single junction solar cell and is considerably lower than the limit of photovoltaic conversion (~ 80 %). A further improvement in photovoltaic conversion efficiency is possible by implementing a multiple quasi-fermi level system (MQFL). A MQFL allows the absorption of sub band gap photons with current being extracted at a higher band-gap, thereby allowing to overcome the efficiency limit of single junction devices. A MQFL can be realized either by thin epitaxial layers of alternating higher and lower band gap material with nearly lattice matched (quantum well) or highly lattice mismatched (quantum dot) structure. The thesis identifies the material combination for quantum well structure and calculates the absorption coefficient of a MQFl based on quantum well. GaAsSb (barrier)/InAs(dot) was identified as a candidate material for MQFL using quantum dot. The thesis explains the growth mechanism of GaAsSb and the optimization of GaAsSb and GaAs heterointerface.
ContributorsGhosha, Kuṇāla (Author) / Bowden, Stuart (Thesis advisor) / Honsberg, Christiana (Thesis advisor) / Vasileska, Dragica (Committee member) / Goodnick, Stephen (Committee member) / Arizona State University (Publisher)
Created2011
Description
As crystalline silicon solar cells continue to get thinner, the recombination of carriers at the surfaces of the cell plays an ever-important role in controlling the cell efficiency. One tool to minimize surface recombination is field effect passivation from the charges present in the thin films applied on the cell surfaces. The focus of this work is to understand the properties of charges present in the SiNx films and then to develop a mechanism to manipulate the polarity of charges to either negative or positive based on the end-application. Specific silicon-nitrogen dangling bonds (·Si-N), known as K center defects, are the primary charge trapping defects present in the SiNx films. A custom built corona charging tool was used to externally inject positive or negative charges in the SiNx film. Detailed Capacitance-Voltage (C-V) measurements taken on corona charged SiNx samples confirmed the presence of a net positive or negative charge density, as high as +/- 8 x 1012 cm-2, present in the SiNx film. High-energy (~ 4.9 eV) UV radiation was used to control and neutralize the charges in the SiNx films. Electron-Spin-Resonance (ESR) technique was used to detect and quantify the density of neutral K0 defects that are paramagnetically active. The density of the neutral K0 defects increased after UV treatment and decreased after high temperature annealing and charging treatments. Etch-back C-V measurements on SiNx films showed that the K centers are spread throughout the bulk of the SiNx film and not just near the SiNx-Si interface. It was also shown that the negative injected charges in the SiNx film were stable and present even after 1 year under indoor room-temperature conditions. Lastly, a stack of SiO2/SiNx dielectric layers applicable to standard commercial solar cells was developed using a low temperature (< 400 °C) PECVD process. Excellent surface passivation on FZ and CZ Si substrates for both n- and p-type samples was achieved by manipulating and controlling the charge in SiNx films.
ContributorsSharma, Vivek (Author) / Bowden, Stuart (Thesis advisor) / Schroder, Dieter (Committee member) / Honsberg, Christiana (Committee member) / Roedel, Ronald (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2013
Description
The purpose of the solar powered quadcopter is to join together the growing technologies of photovoltaics and quadcopters, creating a single unified device where the technologies harmonize to produce a new product with abilities beyond those of a traditional battery powered drone. Specifically, the goal is to take the battery-only flight time of a quadcopter loaded with a solar array and increase that flight time by 33% with additional power provided by solar cells. The major concepts explored throughout this project are quadcopter functionality and capability and solar cell power production. In order to combine these technologies, the solar power and quadcopter components were developed and analyzed individually before connecting the solar array to the quadcopter circuit and testing the design as a whole. Several solar copter models were initially developed, resulting in multiple unique quadcopter and solar cell array designs which underwent preliminary testing before settling on a finalized design which proved to be the most effective and underwent final timed flight tests. Results of these tests are showing that the technologies complement each other as anticipated and highlight promising results for future development in this area, in particular the development of a drone running on solar power alone. Applications for a product such as this are very promising in many fields, including the industries of power, defense, consumer goods and services, entertainment, marketing, and medical. Also, becoming a more popular device for UAV hobbyists, such developments would be very appealing for leisure flying and personal photography purposes as well.
ContributorsMartin, Heather Catrina (Author) / Bowden, Stuart (Thesis director) / Aberle, James (Committee member) / Electrical Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2015-12
Description
The majority of the 52 photovoltaic installations at ASU are governed by power purchase agreements (PPA) that set a fixed per kilowatt-hour rate at which ASU buys power from the system owner over the period of 15-20 years. PPAs require accurate predictions of the system output to determine the financial viability of the system installations as well as the purchase price. The research was conducted using PPAs and historical solar power production data from the ASU's Energy Information System (EIS). The results indicate that most PPAs slightly underestimate the annual energy yield. However, the modeled power output from PVsyst indicates that higher energy outputs are possible with better system monitoring.
ContributorsVulic, Natasa (Author) / Bowden, Stuart (Thesis director) / Bryan, Harvey (Committee member) / Sharma, Vivek (Committee member) / Barrett, The Honors College (Contributor) / School of Sustainability (Contributor) / Ira A. Fulton School of Engineering (Contributor)
Created2012-12
Description
Current solar cells use a silver-printed front grid for electron conduction. Unfortunately, silver is expensive, leading to research into alternative materials. Copper is the most viable but poses grain growth problems and stress problems silver does not. This paper has characterised the effects of proprietary additives, thickness of the copper film layer, current density, and grain growth on stress. Per Stoney's equation, increased thickness leads to decreased thickness. However, if the current density is too high, the plated copper will become porous. Grain growth, quantified by the ratio of the intensity of the (1 1 1) plane and the (2 0 0) plane, increases over time, thus increasing the ratio which further equations to increased stress. Future work would be gathering more data to further investigate the relationship between additives and stress, current densities and stress, and grain growth over time and stress.
ContributorsSimonet, Danny (Co-author) / Chang, Celine (Co-author) / Bowden, Stuart (Thesis director) / Karas, Joseph (Committee member) / Division of Teacher Preparation (Contributor) / Mechanical and Aerospace Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2018-05
Description
This is a lectures series on photovoltaics. As the need for electrical energy rises, mankind has struggled to meet its need in a reliable lasting way. Throughout this struggle, solar energy has come to the foreground as a complete solution. However, it has many drawbacks and needs a lot of development. In addition, the general public is unaware of how solar energy works, how it is made, and how it stands economically. This series of lectures answering those three questions.
ContributorsLeBeau, Edward Sanroma (Author) / Goryll, Michael (Thesis director) / Bowden, Stuart (Committee member) / Dauksher, Bill (Committee member) / Electrical Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2017-05
Description
As global population and demand for electrical power increase, humanity is faced with the growing challenge of harnessing and distributing enough energy to sustain the developing world. Currently, fossil fuels (coal
atural gas) are our main sources of electricity. However, their cost is increasing, they are nonrenewable, and they are very harmful to the environment. Thus, capacity expansion in the renewable energy sector must be realized to offset higher energy demand and reduce dependence on fossil fuels. Solar energy represents a practical solution, as installed global solar capacity has been increasing exponentially over the past 2 decades. However, even with government incentives, solar energy price ($/kWh) continues to be highly dependent on political climate and raw material (silicon and silver) cost. To realistically and cost effectively meet the projected expansions within the solar industry, silver must be replaced with less costly and more abundant metals (such as copper) in the front-grid metallization process of photovoltaic cells. Copper, while offering both higher achievable efficiencies and a raw material cost nearly 100 times cheaper than silver, has inherent disadvantages. Specifically, copper diffuses rapidly into the silicon substrate, requires more complex and error-prone processing steps, and tends to have less adhesive strength, reducing panel robustness. In this study, nickel deposition via sputtering was analyzed, as well as overall potential of nickel as a seed layer for copper plating, which also provides a barrier layer to copper diffusion in silicon. Thermally-formed nickel silicide also reduces contact resistivity, increasing cell efficiency. It was found that at 400 \u00B0C, ideal nickel silicide formation occurred. By computer modeling, contact resistivity was found to have a significant impact on cell efficiency (up to 1.8%). Finally, sputtering proved useful to analyze nickel silicide formation, but costs and time requirements prevent it from being a practical industrial-scale metallization method.
atural gas) are our main sources of electricity. However, their cost is increasing, they are nonrenewable, and they are very harmful to the environment. Thus, capacity expansion in the renewable energy sector must be realized to offset higher energy demand and reduce dependence on fossil fuels. Solar energy represents a practical solution, as installed global solar capacity has been increasing exponentially over the past 2 decades. However, even with government incentives, solar energy price ($/kWh) continues to be highly dependent on political climate and raw material (silicon and silver) cost. To realistically and cost effectively meet the projected expansions within the solar industry, silver must be replaced with less costly and more abundant metals (such as copper) in the front-grid metallization process of photovoltaic cells. Copper, while offering both higher achievable efficiencies and a raw material cost nearly 100 times cheaper than silver, has inherent disadvantages. Specifically, copper diffuses rapidly into the silicon substrate, requires more complex and error-prone processing steps, and tends to have less adhesive strength, reducing panel robustness. In this study, nickel deposition via sputtering was analyzed, as well as overall potential of nickel as a seed layer for copper plating, which also provides a barrier layer to copper diffusion in silicon. Thermally-formed nickel silicide also reduces contact resistivity, increasing cell efficiency. It was found that at 400 \u00B0C, ideal nickel silicide formation occurred. By computer modeling, contact resistivity was found to have a significant impact on cell efficiency (up to 1.8%). Finally, sputtering proved useful to analyze nickel silicide formation, but costs and time requirements prevent it from being a practical industrial-scale metallization method.
ContributorsBliss, Lyle Brewster (Author) / Bowden, Stuart (Thesis director) / Karas, Joseph (Committee member) / Chemical Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2017-05
Description
This is a lectures series on photovoltaics. As the need for electrical energy rises, mankind has struggled to meet its need in a reliable lasting way. Throughout this struggle, solar energy has come to the foreground as a complete solution. However, it has many drawbacks and needs a lot of development. In addition, the general public is unaware of how solar energy works, how it is made, and how it stands economically. This series of lectures answering those three questions. After two years doing photovoltaic research, and an undergraduate degree in Electrical Engineering, enough expertise has been acquired present on at a late high-school to early college level. Education is key to improving the popularity of using solar energy and the popularity of investing in photovoltaic research. Solar energy is a viable option to satisfy our energy crisis because the materials it requires can quickly be acquired, and there is enough of material to provide a global solution. In addition, the amount of solar energy that hits the surface of the earth in a day is orders of magnitude more than the amount of energy we require. The main goal of this project is to have an effective accessible tool to teach people about solar. Thus, the lectured will be posted on pveducation.com, YouTube, the Barrett repository, and the QUSST website. The content was acquired in four ways. The first way is reading up on the current papers and journals describing the new developments in photovoltaics. The second part is getting in contact with Stuart Bowden and Bill Daukser at Arizona State University's Solar Power Lab as well as the other faculty associated with the Solar Power Lab. There is quite a bit of novel research going on at their lab, as well as a student run pilot line that is actively building solar cells. The third way is reading about solar device physics using device physics textbooks and the PVEducation website made by Stuart Bowden. The forth way is going into ASU's solar power lab.
ContributorsLeBeau, Edward (Author) / Goryll, Michael (Thesis director) / Bowden, Stuart (Committee member) / Dauksher, William (Committee member) / Barrett, The Honors College (Contributor)
Created2017-05
Description
Interdigitated back contact (IBC) solar cells have achieved the highest single junction silicon wafer-based solar cell power conversion efficiencies reported to date. This thesis is about the fabrication of a high-efficiency silicon heterojunction IBC solar cell for potential use as the bottom cell for a 3-terminal lattice-matched dilute-nitride Ga (In)NP(As)/Si monolithic tandem solar cell. An effective fabrication process has been developed and the process challenges related to open circuit voltage (Voc), series resistance (Rs), and fill factor (FF) are experimentally analyzed. While wet etching, the sample lost the initial passivation, and by changing the etchant solution and passivation process, the voltage at maximum power recovered to an initial value of over 710 mV before metallization. The factors reducing the series resistance loss in IBC cells were also studied. One of these factors was the Indium Tin Oxide (ITO) sputtering parameters, which impact the conductivity of the ITO layer and transport across the a-Si:H/ITO interface. For the standard recipe, the chamber pressure was 3.5 mTorr with no oxygen partial pressure, and the thickness of the ITO layer in contact with the a-Si:H layers, was optimized to 150 nm. The patterning method for the metal contacts and final annealing also change the contact resistance of the base and emitter stack layers. The final annealing step is necessary to recover the sputtering damage; however, the higher the annealing time the higher the final IBC series resistance. The best efficiency achieved was 19.3% (Jsc = 37 mA/cm2, Voc = 691 mV, FF = 71.7%) on 200 µm thick 1-15 Ω-cm n-type CZ C-Si with a designated area of 4 cm2.
ContributorsMoeini Rizi, Mansoure (Author) / Goodnick, Stephen (Thesis advisor) / Honsberg, Christina (Committee member) / Goryll, Michael (Committee member) / Smith, David (Committee member) / Bowden, Stuart (Committee member) / Arizona State University (Publisher)
Created2022
Description
In this dissertation, the nanofabrication process is characterized for fabrication of nanostructure on surface of silicon and gallium phosphide using silica nanosphere lithography (SNL) and metal assisted chemical etching (MACE) process. The SNL process allows fast process time and well defined silica nanosphere monolayer by spin-coating process after mixing N,N-dimethyl-formamide (DMF) solvent. The MACE process achieves the high aspect ratio structure fabrication using the reaction between metal and wet chemical. The nanostructures are fabricated on Si surface for enhanced light management, but, without proper surface passivation those gains hardly impact the performance of the solar cell. The surface passivation of nanostructures is challenging, not only due to larger surface areas and aspect ratios, but also has a direct result of the nanofabrication processes. In this research, the surface passivation of silicon nanostructures is improved by modifying the silica nanosphere lithography (SNL) and the metal assisted chemical etching (MACE) processes, frequently used to fabricate nanostructures. The implementation of a protective silicon oxide layer is proposed prior to the lithography process to mitigate the impact of the plasma etching during the SNL. Additionally, several adhesion layers are studied, chromium (Cr), nickel (Ni) and titanium (Ti) with gold (Au), used in the MACE process. The metal contamination is one of main damage and Ti makes the mitigation of metal contamination. Finally, a new chemical etching step is introduced, using potassium hydroxide at room temperature, to smooth the surface of the nanostructures after the MACE process. This chemical treatment allows to improve passivation by surface area control and removing surface defects. In this research, I demonstrate the Aluminum Oxide (Al2O3) passivation on nanostructure using atomic layer deposition (ALD) process. 10nm of Al2O3 layer makes effective passivation on nanostructure with optimized post annealing in forming gas (N2/H2) environment. However, 10nm thickness is not suitable for hetero structure because of carrier transportation. For carrier transportation, ultrathin Al2O3 (≤ 1nm) layer is used for passivation, but effective passivation is not achieved because of insufficient hydrogen contents. This issue is solved to use additional ultrathin SiO2 (1nm) below Al2O3 layer and hydrogenation from doped a-Si:H.
Moreover, the nanostructure is creased on gallium phosphide (GaP) by SNL and MACE process. The fabrication process is modified by control of metal layer and MACE solution.
ContributorsKim, Sangpyeong (Author) / Honsberg, Christiana (Thesis advisor) / Bowden, Stuart (Committee member) / Goryll, Michael (Committee member) / Augusto, Andre (Committee member) / Arizona State University (Publisher)
Created2021