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Description
Scaling of the classical planar MOSFET below 20 nm gate length is facing not only technological difficulties but also limitations imposed by short channel effects, gate and junction leakage current due to quantum tunneling, high body doping induced threshold voltage variation, and carrier mobility degradation. Non-classical multiple-gate structures such as double-gate (DG) FinFETs and surrounding gate field-effect-transistors (SGFETs) have good electrostatic integrity and are an alternative to planar MOSFETs for below 20 nm technology nodes. Circuit design with these devices need compact models for SPICE simulation. In this work physics based compact models for the common-gate symmetric DG-FinFET, independent-gate asymmetric DG-FinFET, and SGFET are developed. Despite the complex device structure and boundary conditions for the Poisson-Boltzmann equation, the core structure of the DG-FinFET and SGFET models, are maintained similar to the surface potential based compact models for planar MOSFETs such as SP and PSP. TCAD simulations show differences between the transient behavior and the capacitance-voltage characteristics of bulk and SOI FinFETs if the gate-voltage swing includes the accumulation region. This effect can be captured by a compact model of FinFETs only if it includes the contribution of both types of carriers in the Poisson-Boltzmann equation. An accurate implicit input voltage equation valid in all regions of operation is proposed for common-gate symmetric DG-FinFETs with intrinsic or lightly doped bodies. A closed-form algorithm is developed for solving the new input voltage equation including ambipolar effects. The algorithm is verified for both the surface potential and its derivatives and includes a previously published analytical approximation for surface potential as a special case when ambipolar effects can be neglected. The symmetric linearization method for common-gate symmetric DG-FinFETs is developed in a form free of the charge-sheet approximation present in its original formulation for bulk MOSFETs. The accuracy of the proposed technique is verified by comparison with exact results. An alternative and computationally efficient description of the boundary between the trigonometric and hyperbolic solutions of the Poisson-Boltzmann equation for the independent-gate asymmetric DG-FinFET is developed in terms of the Lambert W function. Efficient numerical algorithm is proposed for solving the input voltage equation. Analytical expressions for terminal charges of an independent-gate asymmetric DG-FinFET are derived. The new charge model is C-infinity continuous, valid for weak as well as for strong inversion condition of both the channels and does not involve the charge-sheet approximation. This is accomplished by developing the symmetric linearization method in a form that does not require identical boundary conditions at the two Si-SiO2 interfaces and allows for volume inversion in the DG-FinFET. Verification of the model is performed with both numerical computations and 2D TCAD simulations under a wide range of biasing conditions. The model is implemented in a standard circuit simulator through Verilog-A code. Simulation examples for both digital and analog circuits verify good model convergence and demonstrate the capabilities of new circuit topologies that can be implemented using independent-gate asymmetric DG-FinFETs.
ContributorsDessai, Gajanan (Author) / Gildenblat, Gennady (Committee member) / McAndrew, Colin (Committee member) / Cao, Yu (Committee member) / Barnaby, Hugh (Committee member) / Arizona State University (Publisher)
Created2012
Description
The increased use of commercial complementary metal-oxide-semiconductor (CMOS) technologies in harsh radiation environments has resulted in a new approach to radiation effects mitigation. This approach utilizes simulation to support the design of integrated circuits (ICs) to meet targeted tolerance specifications. Modeling the deleterious impact of ionizing radiation on ICs fabricated in advanced CMOS technologies requires understanding and analyzing the basic mechanisms that result in buildup of radiation-induced defects in specific sensitive regions. Extensive experimental studies have demonstrated that the sensitive regions are shallow trench isolation (STI) oxides. Nevertheless, very little work has been done to model the physical mechanisms that result in the buildup of radiation-induced defects and the radiation response of devices fabricated in these technologies. A comprehensive study of the physical mechanisms contributing to the buildup of radiation-induced oxide trapped charges and the generation of interface traps in advanced CMOS devices is presented in this dissertation. The basic mechanisms contributing to the buildup of radiation-induced defects are explored using a physical model that utilizes kinetic equations that captures total ionizing dose (TID) and dose rate effects in silicon dioxide (SiO2). These mechanisms are formulated into analytical models that calculate oxide trapped charge density (Not) and interface trap density (Nit) in sensitive regions of deep-submicron devices. Experiments performed on field-oxide-field-effect-transistors (FOXFETs) and metal-oxide-semiconductor (MOS) capacitors permit investigating TID effects and provide a comparison for the radiation response of advanced CMOS devices. When used in conjunction with closed-form expressions for surface potential, the analytical models enable an accurate description of radiation-induced degradation of transistor electrical characteristics. In this dissertation, the incorporation of TID effects in advanced CMOS devices into surface potential based compact models is also presented. The incorporation of TID effects into surface potential based compact models is accomplished through modifications of the corresponding surface potential equations (SPE), allowing the inclusion of radiation-induced defects (i.e., Not and Nit) into the calculations of surface potential. Verification of the compact modeling approach is achieved via comparison with experimental data obtained from FOXFETs fabricated in a 90 nm low-standby power commercial bulk CMOS technology and numerical simulations of fully-depleted (FD) silicon-on-insulator (SOI) n-channel transistors.
ContributorsSanchez Esqueda, Ivan (Author) / Barnaby, Hugh J (Committee member) / Schroder, Dieter (Thesis advisor) / Schroder, Dieter K. (Committee member) / Holbert, Keith E. (Committee member) / Gildenblat, Gennady (Committee member) / Arizona State University (Publisher)
Created2011
Description
The non-quasi-static (NQS) description of device behavior is useful in fast switching and high frequency circuit applications. Hence, it is necessary to develop a fast and accurate compact NQS model for both large-signal and small-signal simulations. A new relaxation-time-approximation based NQS MOSFET model, consistent between transient and small-signal simulations, has been developed for surface-potential-based MOSFET compact models. The new model is valid for all regions of operation and is compatible with, and at low frequencies recovers, the quasi-static (QS) description of the MOSFET. The model is implemented in two widely used circuit simulators and tested for speed and convergence. It is verified by comparison with technology computer aided design (TCAD) simulations and experimental data, and by application of a recently developed benchmark test for NQS MOSFET models. In addition, a new and simple technique to characterize NQS and gate resistance, Rgate, MOS model parameters from measured data has been presented. In the process of experimental model verification, the effects of bulk resistance on MOSFET characteristics is investigated both theoretically and experimentally to separate it from the NQS effects.
ContributorsZhu, Zeqin (Author) / Gildenblat, Gennady (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Barnaby, Hugh (Committee member) / Mcandrew, Colin C (Committee member) / Arizona State University (Publisher)
Created2012
Description
Lateral Double-diffused (LDMOS) transistors are commonly used in power management, high voltage/current, and RF circuits. Their characteristics include high breakdown voltage, low on-resistance, and compatibility with standard CMOS and BiCMOS manufacturing processes. As with other semiconductor devices, an accurate and physical compact model is critical for LDMOS-based circuit design. The goal of this research work is to advance the state-of-the-art by developing a physics-based scalable compact model of LDMOS transistors. The new model, SP-HV, is constructed from a surface-potential-based bulk MOSFET model, PSP, and a nonlinear resistor model, R3. The use of independently verified and mature sub-models leads to increased accuracy and robustness of an overall LDMOS model. Improved geometry scaling and simplified statistical modeling are other useful and practical consequences of the approach. Extensions are made to both PSP and R3 for improved modeling of LDMOS devices, and one internal node is introduced to connect the two component models. The presence of the lightly-doped drift region in LDMOS transistors causes some characteristic device effects which are usually not observed in conventional MOSFETs. These include quasi-saturation, a sharp peak in transconductance at low VD, gate capacitance exceeding oxide capacitance at positive VD, negative transcapacitances CBG and CGB at positive VD, a "double-hump" IB(VG) current and expansion effects. SP-HV models these effects accurately. It also includes a scalable self-heating model which is important to model the geometry dependence of the expansion effect. SP-HV, including its scalability, is verified extensively by comparison both to TCAD simulations and experimental data. The close agreement confirms the validity of the model structure. Circuit simulation examples are presented to demonstrate its convergence.
ContributorsYao, Wei (Author) / Gildenblat, Gennady (Thesis advisor) / Barnaby, Hugh (Committee member) / Cao, Yu (Committee member) / McAndrew, Colin (Committee member) / Arizona State University (Publisher)
Created2012
Description
Geology and its tangential studies, collectively known and referred to in this thesis as geosciences, have been paramount to the transformation and advancement of society, fundamentally changing the way we view, interact and live with the surrounding natural and built environment. It is important to recognize the value and importance of this interdisciplinary scientific field while reconciling its ties to imperial and colonizing extractive systems which have led to harmful and invasive endeavors. This intersection among geosciences, (environmental) justice studies, and decolonization is intended to promote inclusive pedagogical models through just and equitable methodologies and frameworks as to prevent further injustices and promote recognition and healing of old wounds. By utilizing decolonial frameworks and highlighting the voices of peoples from colonized and exploited landscapes, this annotated syllabus tackles the issues previously described while proposing solutions involving place-based education and the recentering of land within geoscience pedagogical models. (abstract)
ContributorsReed, Cameron E (Author) / Richter, Jennifer (Thesis director) / Semken, Steven (Committee member) / School of Earth and Space Exploration (Contributor, Contributor) / School of Sustainability (Contributor) / Barrett, The Honors College (Contributor)
Created2021-05
Description
The ASU COVID-19 testing lab process was developed to operate as the primary testing site for all ASU staff, students, and specified external individuals. Tests are collected at various collection sites, including a walk-in site at the SDFC and various drive-up sites on campus; analysis is conducted on ASU campus and results are distributed virtually to all patients via the Health Services patient portal. The following is a literature review on past implementations of various process improvement techniques and how they can be applied to the ABCTL testing process to achieve laboratory goals. (abstract)
ContributorsKrell, Abby Elizabeth (Co-author) / Bruner, Ashley (Co-author) / Ramesh, Frankincense (Co-author) / Lewis, Gabriel (Co-author) / Barwey, Ishna (Co-author) / Myers, Jack (Co-author) / Hymer, William (Co-author) / Reagan, Sage (Co-author) / Compton, Carolyn (Thesis director) / McCarville, Daniel R. (Committee member) / Industrial, Systems & Operations Engineering Prgm (Contributor) / Barrett, The Honors College (Contributor)
Created2021-05
Description
For as long as humans have been working, they have been looking for ways to get that work done better, faster, and more efficient. Over the course of human history, mankind has created innumerable spectacular inventions, all with the goal of making the economy and daily life more efficient. Today, innovations and technological advancements are happening at a pace like never seen before, and technology like automation and artificial intelligence are poised to once again fundamentally alter the way people live and work in society. Whether society is prepared or not, robots are coming to replace human labor, and they are coming fast. In many areas artificial intelligence has disrupted entire industries of the economy. As people continue to make advancements in artificial intelligence, more industries will be disturbed, more jobs will be lost, and entirely new industries and professions will be created in their wake. The future of the economy and society will be determined by how humans adapt to the rapid innovations that are taking place every single day. In this paper I will examine the extent to which automation will take the place of human labor in the future, project the potential effect of automation to future unemployment, and what individuals and society will need to do to adapt to keep pace with rapidly advancing technology. I will also look at the history of automation in the economy. For centuries humans have been advancing technology to make their everyday work more productive and efficient, and for centuries this has forced humans to adapt to the modern technology through things like training and education. The thesis will additionally examine the ways in which the U.S. education system will have to adapt to meet the demands of the advancing economy, and how job retraining programs must be modernized to prepare workers for the changing economy.
ContributorsCunningham, Reed P. (Author) / DeSerpa, Allan (Thesis director) / Haglin, Brett (Committee member) / School of International Letters and Cultures (Contributor) / Department of Finance (Contributor) / Barrett, The Honors College (Contributor)
Created2018-05
Description
Businesses stand to face many uncertainties from the moment they start up to every moment in between. A business can try to recognize them and plan ahead, react to them as they occur, or be rocked by a black swan they never saw coming. How a business deals with unforeseen events can increase its potential for success or failure. With this in mind, there is no better bridge between the here and now and the future than planning for change in order to move a company toward preparing for change, adapting to change and achieving optimal results. Interested in taking a step toward the digital age, Alpha Homes Management, Inc. (Alpha Homes) sought our help to explore ideas and options to take their company to a new level. This Barrett Creative Project was centered on designing a system for Alpha Homes that will replace their outdated paper-based system with a more digital one. This aligns with the project also featured as a capstone project as required by the information technology degree expectations. In supplement to the capstone, and for the Barrett Creative Project, the final product was presented to the owners of Alpha Homes Management, Inc. to be utilized by the business. The end goal is to provide a platform which provides a paperless environment for documentation and bring the company a step closer to having a robust internet presence. Now that the web-based application product has been created and presented, the testing phase can now begin to evaluate its efficacy.
ContributorsBrice-Nash, Tristan (Co-author) / Alfawzan, Mohammad (Co-author) / Doheny, Damien (Thesis director) / Rodriguez, Carlos (Committee member) / Information Technology (Contributor) / Barrett, The Honors College (Contributor)
Created2018-05
Description
An ethical dilemma is not a matter of “right” versus “wrong,” but rather it is a situation of conflicting values. A common ethical dilemma is that of honesty versus loyalty—is it better to tell the truth, or remain loyal to the company? In the Japanese culture, truth is circumstantial and can vary with different situations. In a way, the Japanese idea of honesty reflects how highly they value loyalty. This overlap of values results in the lack of an ethical dilemma for the Japanese, which creates a new risk for fraud. Without this struggle, a Japanese employee does not have strong justification against committing fraud if it aligns with his values of honesty and loyalty.
This paper looks at the Japanese values relating to honesty and loyalty to show how much these ideas overlap. The lack of a conflict of values creates a risk for fraud, which will be shown through an analysis of the scandals of two Japanese companies, Toshiba and Olympus. These scandals shine light on the complexity of the ethical dilemma for the Japanese employees; since their sense of circumstantial honesty encourages them to lie if it maintains the harmony of the group, there is little stopping them from committing the fraud that their superiors asked them to commit.
In a global economy, understanding the ways that values impact business and decisions is important for both interacting with others and anticipating potential conflicts, including those that may result in or indicate potential red flags for fraud.
This paper looks at the Japanese values relating to honesty and loyalty to show how much these ideas overlap. The lack of a conflict of values creates a risk for fraud, which will be shown through an analysis of the scandals of two Japanese companies, Toshiba and Olympus. These scandals shine light on the complexity of the ethical dilemma for the Japanese employees; since their sense of circumstantial honesty encourages them to lie if it maintains the harmony of the group, there is little stopping them from committing the fraud that their superiors asked them to commit.
In a global economy, understanding the ways that values impact business and decisions is important for both interacting with others and anticipating potential conflicts, including those that may result in or indicate potential red flags for fraud.
ContributorsTabar, Kelly Ann (Author) / Samuelson, Melissa (Thesis director) / Goldman, Alan (Committee member) / WPC Graduate Programs (Contributor) / W.P. Carey School of Business (Contributor) / School of Accountancy (Contributor) / Barrett, The Honors College (Contributor)
Created2018-05
Description
This paper will be exploring a marketing plan for a Kpop Fan artist, Jennifer Lee. Kpop is a genre of music originating from South Korea that provides a whole-package entertainment. Fan artists are producers who create produce for the consumption and purchase of other Kpop fans. The paper will consider segmentation and the products and platforms that best target them in order to maximize revenue. A survey was performed with a sample size of 314 participants to find out consumer behavior and preference as well as producer situation. Consumers come from both the United States and abroad. Customers come directly and almost exclusively from followers. Therefore, increasing the number of followers on Instagram is essential to increasing revenue. Jennifer has time, resource, and ability constraints, while the market has limited potential. The conclusion is that Jennifer should become more organized as a business. To grow her following, she should cater more towards the most popular fandoms (BTS), make art tutorials, consider collaborations, and better inform followers of her products/services available for purchase. The social media platforms key to marketing Jennifer's products are Instagram and Twitter. Other platforms to be used to increase exposure are Tumblr, Amino Apps, DeviantArt, Reddit, and YouTube. She must also declutter all of these virtual storefronts of unnecessary content to varying degrees in order to build ease of access and a trustworthy brand image. The best platforms for transaction is a personal store, RedBubble (a website that allows users to sell a variety of products with their uploaded images printed onto them), Patreon, and in-person at conventions.
ContributorsXu, Everest Christine (Author) / Eaton, Kathryn (Thesis director) / Ingram-Waters, Mary (Committee member) / Department of Marketing (Contributor) / Barrett, The Honors College (Contributor)
Created2018-05