Matching Items (46)
Description
The ability of magnetic resonance imaging (MRI) to image any part of the human body without the effects of harmful radiation such as in CAT and PET scans established MRI as a clinical mainstay for a variety of different ailments and maladies. Short wavelengths accompany the high frequencies present in high-field MRI, and are on the same scale as the human body at a static magnetic field strength of 3 T (128 MHz). As a result of these shorter wavelengths, standing wave effects are produced in the MR bore where the patient is located. These standing waves generate bright and dark spots in the resulting MR image, which correspond to irregular regions of high and low clarity. Coil loading is also an inevitable byproduct of subject positioning inside the bore, which decreases the signal that the region of interest (ROI) receives for the same input power. Several remedies have been proposed in the literature to remedy the standing wave effect, including the placement of high permittivity dielectric pads (HPDPs) near the ROI. Despite the success of HPDPs at smoothing out image brightness, these pads are traditionally bulky and take up a large spatial volume inside the already small MR bore. In recent years, artificial periodic structures known as metamaterials have been designed to exhibit specific electromagnetic effects when placed inside the bore. Although typically thinner than HPDPs, many metamaterials in the literature are rigid and cannot conform to the shape of the patient, and some are still too bulky for practical use in clinical settings. The well-known antenna engineering concept of fractalization, or the introduction of self-similar patterns, may be introduced to the metamaterial to display a specific resonance curve as well as increase the metamaterial’s intrinsic capacitance. Proposed in this paper is a flexible fractal-inspired metamaterial for application in 3 T MR head imaging. To demonstrate the advantages of this flexibility, two different metamaterial configurations are compared to determine which produces a higher localized signal-to-noise ratio (SNR) and average signal measured in the image: in the first configuration, the metamaterial is kept rigid underneath a human head phantom to represent metamaterials in the literature (single-sided placement); and in the second, the metamaterial is wrapped around the phantom to utilize its flexibility (double-sided placement). The double-sided metamaterial setup was found to produce an increase in normalized SNR of over 5% increase in five of six chosen ROIs when compared to no metamaterial use and showed a 10.14% increase in the total average signal compared to the single-sided configuration.
ContributorsSokol, Samantha (Author) / Sohn, Sung-Min (Thesis director) / Allee, David (Committee member) / Jones, Anne (Committee member) / Barrett, The Honors College (Contributor) / Electrical Engineering Program (Contributor)
Created2022-05
Description
In-Band Full-Duplex (IBFD) can maximize the spectral resources and enable new types of technology, but generates self-interference (SI) that must be mitigated to enable practical applications. Analog domain SI cancellation (SIC), usually implemented as a digitally controlled adaptive filter, is one technique that is necessary to mitigate the interference below the noise floor. To maximize the efficiency and performance of the adaptive filter this thesis studies how key design choices impact the performance so that device designers can make better tradeoff decisions. Additionally, algorithms are introduced to maximize the SIC that incorporate the hardware constraints. The provided simulations show up to 45dB SIC with 7 bits of precision at 100MHz bandwidth.
ContributorsMorgenstern, Carl Willis (Author) / Bliss, Daniel W (Thesis advisor) / Herschfelt, Andrew (Committee member) / Papandreou-Suppappola, Antonia (Committee member) / Rong, Yu (Committee member) / Allee, David (Committee member) / Arizona State University (Publisher)
Created2023
Description
Advances in semiconductor technology have brought computer-based systems intovirtually all aspects of human life. This unprecedented integration of semiconductor based systems in our lives has significantly increased the domain and the number
of safety-critical applications – application with unacceptable consequences of failure. Software-level error resilience schemes are attractive because they can provide commercial-off-the-shelf microprocessors with adaptive and scalable reliability.
Among all software-level error resilience solutions, in-application instruction replication based approaches have been widely used and are deemed to be the most effective. However, existing instruction-based replication schemes only protect some part of computations i.e. arithmetic and logical instructions and leave the rest as unprotected. To improve the efficacy of instruction-level redundancy-based approaches, we developed several error detection and error correction schemes. nZDC (near Zero silent
Data Corruption) is an instruction duplication scheme which protects the execution of whole application. Rather than detecting errors on register operands of memory and control flow operations, nZDC checks the results of such operations. nZDC en
sures the correct execution of memory write instruction by reloading stored value and checking it against redundantly computed value. nZDC also introduces a novel control flow checking mechanism which replicates compare and branch instructions and
detects both wrong direction branches as well as unwanted jumps. Fault injection experiments show that nZDC can improve the error coverage of the state-of-the-art schemes by more than 10x, without incurring any more performance penalty. Further
more, we introduced two error recovery solutions. InCheck is our backward recovery solution which makes light-weighted error-free checkpoints at the basic block granularity. In the case of error, InCheck reverts the program execution to the beginning of last executed basic block and resumes the execution by the aid of preserved in formation. NEMESIS is our forward recovery scheme which runs three versions of computation and detects errors by checking the results of all memory write and branch
operations. In the case of a mismatch, NEMESIS diagnosis routine decides if the error is recoverable. If yes, NEMESIS recovery routine reverts the effect of error from the program state and resumes program normal execution from the error detection
point.
of safety-critical applications – application with unacceptable consequences of failure. Software-level error resilience schemes are attractive because they can provide commercial-off-the-shelf microprocessors with adaptive and scalable reliability.
Among all software-level error resilience solutions, in-application instruction replication based approaches have been widely used and are deemed to be the most effective. However, existing instruction-based replication schemes only protect some part of computations i.e. arithmetic and logical instructions and leave the rest as unprotected. To improve the efficacy of instruction-level redundancy-based approaches, we developed several error detection and error correction schemes. nZDC (near Zero silent
Data Corruption) is an instruction duplication scheme which protects the execution of whole application. Rather than detecting errors on register operands of memory and control flow operations, nZDC checks the results of such operations. nZDC en
sures the correct execution of memory write instruction by reloading stored value and checking it against redundantly computed value. nZDC also introduces a novel control flow checking mechanism which replicates compare and branch instructions and
detects both wrong direction branches as well as unwanted jumps. Fault injection experiments show that nZDC can improve the error coverage of the state-of-the-art schemes by more than 10x, without incurring any more performance penalty. Further
more, we introduced two error recovery solutions. InCheck is our backward recovery solution which makes light-weighted error-free checkpoints at the basic block granularity. In the case of error, InCheck reverts the program execution to the beginning of last executed basic block and resumes the execution by the aid of preserved in formation. NEMESIS is our forward recovery scheme which runs three versions of computation and detects errors by checking the results of all memory write and branch
operations. In the case of a mismatch, NEMESIS diagnosis routine decides if the error is recoverable. If yes, NEMESIS recovery routine reverts the effect of error from the program state and resumes program normal execution from the error detection
point.
ContributorsDidehban, Moslem (Author) / Shrivastava, Aviral (Thesis advisor) / Wu, Carole-Jean (Committee member) / Clark, Lawrence (Committee member) / Mahlke, Scott (Committee member) / Arizona State University (Publisher)
Created2018
Description
An integrated methodology combining redundant clock tree synthesis and pulse clocked latches mitigates both single event upsets (SEU) and single event transients (SET) with reduced power consumption. This methodology helps to change the hardness of the design on the fly. This approach, with minimal additional overhead circuitry, has the ability to work in three different modes of operation depending on the speed, hardness and power consumption required by design. This was designed on 90nm low-standby power (LSP) process and utilized commercial CAD tools for testing. Spatial separation of critical nodes in the physical design of this approach mitigates multi-node charge collection (MNCC) upsets. An advanced encryption system implemented with the proposed design, compared to a previous design with non-redundant clock trees and local delay generation. The proposed approach reduces energy per operation up to 18% over an improved version of the prior approach, with negligible area impact. It can save up to 2/3rd of the power consumption and reach maximum possible frequency, when used in non-redundant mode of operation.
ContributorsGujja, Aditya (Author) / Clark, Lawrence T (Thesis advisor) / Holbert, Keith E. (Committee member) / Allee, David (Committee member) / Arizona State University (Publisher)
Created2015
Description
Due to diminishing availability of 3He, which is the critical component of neutron detecting proportional counters, large area flexible arrays are being considered as a potential replacement for neutron detection. A large area flexible array, utilizing semiconductors for both charged particle detection and pixel readout, ensures a large detection surface area in a light weight rugged form. Such a neutron detector could be suitable for deployment at ports of entry. The specific approach used in this research, uses a neutron converter layer which captures incident thermal neutrons, and then emits ionizing charged particles. These ionizing particles cause electron-hole pair generation within a single pixel's integrated sensing diode. The resulting charge is then amplified via a low-noise amplifier. This document begins by discussing the current state of the art in neutron detection and the associated challenges. Then, for the purpose of resolving some of these issues, recent design and modeling efforts towards developing an improved neutron detection system are described. Also presented is a low-noise active pixel sensor (APS) design capable of being implemented in low temperature indium gallium zinc oxide (InGaZnO) or amorphous silicon (a-Si:H) thin film transistor process compatible with plastic substrates. The low gain and limited scalability of this design are improved upon by implementing a new multi-stage self-resetting APS. For each APS design, successful radiation measurements are also presented using PiN diodes for charged particle detection. Next, detection array readout methodologies are modeled and analyzed, and use of a matched filter readout circuit is described as well. Finally, this document discusses detection diode integration with the designed TFT-based APSs.
ContributorsKunnen, George (Author) / Allee, David (Thesis advisor) / Garrity, Douglas (Committee member) / Gnade, Bruce (Committee member) / Holbert, Keith E. (Committee member) / Arizona State University (Publisher)
Created2014
Description
The space environment comprises cosmic ray particles, heavy ions and high energy electrons and protons. Microelectronic circuits used in space applications such as satellites and space stations are prone to upsets induced by these particles. With transistor dimensions shrinking due to continued scaling, terrestrial integrated circuits are also increasingly susceptible to radiation upsets. Hence radiation hardening is a requirement for microelectronic circuits used in both space and terrestrial applications.
This work begins by exploring the different radiation hardened flip-flops that have been proposed in the literature and classifies them based on the different hardening techniques.
A reduced power delay element for the temporal hardening of sequential digital circuits is presented. The delay element single event transient tolerance is demonstrated by simulations using it in a radiation hardened by design master slave flip-flop (FF). Using the proposed delay element saves up to 25% total FF power at 50% activity factor. The delay element is used in the implementation of an 8-bit, 8051 designed in the TSMC 130 nm bulk CMOS.
A single impinging ionizing radiation particle is increasingly likely to upset multiple circuit nodes and produce logic transients that contribute to the soft error rate in most modern scaled process technologies. The design of flip-flops is made more difficult with increasing multi-node charge collection, which requires that charge storage and other sensitive nodes be separated so that one impinging radiation particle does not affect redundant nodes simultaneously. We describe a correct-by-construction design methodology to determine a-priori which hardened FF nodes must be separated, as well as a general interleaving scheme to achieve this separation. We apply the methodology to radiation hardened flip-flops and demonstrate optimal circuit physical organization for protection against multi-node charge collection.
Finally, the methodology is utilized to provide critical node separation for a new hardened flip-flop design that reduces the power and area by 31% and 35% respectively compared to a temporal FF with similar hardness. The hardness is verified and compared to other published designs via the proposed systematic simulation approach that comprehends multiple node charge collection and tests resiliency to upsets at all internal and input nodes. Comparison of the hardness, as measured by estimated upset cross-section, is made to other published designs. Additionally, the importance of specific circuit design aspects to achieving hardness is shown.
This work begins by exploring the different radiation hardened flip-flops that have been proposed in the literature and classifies them based on the different hardening techniques.
A reduced power delay element for the temporal hardening of sequential digital circuits is presented. The delay element single event transient tolerance is demonstrated by simulations using it in a radiation hardened by design master slave flip-flop (FF). Using the proposed delay element saves up to 25% total FF power at 50% activity factor. The delay element is used in the implementation of an 8-bit, 8051 designed in the TSMC 130 nm bulk CMOS.
A single impinging ionizing radiation particle is increasingly likely to upset multiple circuit nodes and produce logic transients that contribute to the soft error rate in most modern scaled process technologies. The design of flip-flops is made more difficult with increasing multi-node charge collection, which requires that charge storage and other sensitive nodes be separated so that one impinging radiation particle does not affect redundant nodes simultaneously. We describe a correct-by-construction design methodology to determine a-priori which hardened FF nodes must be separated, as well as a general interleaving scheme to achieve this separation. We apply the methodology to radiation hardened flip-flops and demonstrate optimal circuit physical organization for protection against multi-node charge collection.
Finally, the methodology is utilized to provide critical node separation for a new hardened flip-flop design that reduces the power and area by 31% and 35% respectively compared to a temporal FF with similar hardness. The hardness is verified and compared to other published designs via the proposed systematic simulation approach that comprehends multiple node charge collection and tests resiliency to upsets at all internal and input nodes. Comparison of the hardness, as measured by estimated upset cross-section, is made to other published designs. Additionally, the importance of specific circuit design aspects to achieving hardness is shown.
ContributorsShambhulingaiah, Sandeep (Author) / Clark, Lawrence (Thesis advisor) / Holbert, Keith E. (Committee member) / Seo, Jae sun (Committee member) / Allee, David (Committee member) / Arizona State University (Publisher)
Created2015
Description
This work describes the development of automated flows to generate pad rings, mixed signal power grids, and mega cells in a multi-project test chip. There were three major design flows that were created to create the test chip. The first was the pad ring which was used as the staring block for creating the test chip. This flow put all of the signals for the chip in the order that was wanted along the outside of the die along with creation of the power ring that is used to supply the chip with a robust power source.
The second flow that was created was used to put together a flash block that is based off of a XILIX XCFXXP. This flow was somewhat similar to how the pad ring flow worked except that optimizations and a clock tree was added into the flow. There was a couple of design redoes due to timing and orientation constraints.
Finally, the last flow that was created was the top level flow which is where all of the components are combined together to create a finished test chip ready for fabrication. The main components that were used were the finished flash block, HERMES, test structures, and a clock instance along with the pad ring flow for the creation of the pad ring and power ring.
Also discussed is some work that was done on a previous multi-project test chip. The work that was done was the creation of power gaters that were used like switches to turn the power on and off for some flash modules. To control the power gaters the functionality change of some pad drivers was done so that they output a higher voltage than what is seen in the core of the chip.
The second flow that was created was used to put together a flash block that is based off of a XILIX XCFXXP. This flow was somewhat similar to how the pad ring flow worked except that optimizations and a clock tree was added into the flow. There was a couple of design redoes due to timing and orientation constraints.
Finally, the last flow that was created was the top level flow which is where all of the components are combined together to create a finished test chip ready for fabrication. The main components that were used were the finished flash block, HERMES, test structures, and a clock instance along with the pad ring flow for the creation of the pad ring and power ring.
Also discussed is some work that was done on a previous multi-project test chip. The work that was done was the creation of power gaters that were used like switches to turn the power on and off for some flash modules. To control the power gaters the functionality change of some pad drivers was done so that they output a higher voltage than what is seen in the core of the chip.
ContributorsLieb, Christopher (Author) / Clark, Lawrence (Thesis advisor) / Holbert, Keith E. (Committee member) / Seo, Jae-Sun (Committee member) / Arizona State University (Publisher)
Created2015
Description
This work explores how flexible electronics and display technology can be applied to develop new biomedical devices for medical, biological, and life science applications. It demonstrates how new biomedical devices can be manufactured by only modifying or personalizing the upper layers of a conventional thin film transistor (TFT) display process. This personalization was applied first to develop and demonstrate the world's largest flexible digital x-ray detector for medical and industrial imaging, and the world's first flexible ISFET pH biosensor using TFT technology. These new, flexible, digital x-ray detectors are more durable than conventional glass substrate x-ray detectors, and also can conform to the surface of the object being imaged. The new flexible ISFET pH biosensors are >10X less expensive to manufacture than comparable CMOS-based ISFETs and provide a sensing area that is orders of magnitude larger than CMOS-based ISFETs. This allows for easier integration with area intensive chemical and biological recognition material as well as allow for a larger number of unique recognition sites for low cost multiple disease and pathogen detection.
The flexible x-ray detector technology was then extended to demonstrate the viability of a new technique to seamlessly combine multiple smaller flexible x-ray detectors into a single very large, ultimately human sized, composite x-ray detector for new medical imaging applications such as single-exposure, low-dose, full-body digital radiography. Also explored, is a new approach to increase the sensitivity of digital x-ray detectors by selectively disabling rows in the active matrix array that are not part of the imaged region. It was then shown how high-resolution, flexible, organic light-emitting diode display (OLED) technology can be used to selectively stimulate and/or silence small groups of neurons on the cortical surface or within the deep brain as a potential new tool to diagnose and treat, as well as understand, neurological diseases and conditions. This work also explored the viability of a new miniaturized high sensitivity fluorescence measurement-based lab-on-a-chip optical biosensor using OLED display and a-Si:H PiN photodiode active matrix array technology for point-of-care diagnosis of multiple disease or pathogen biomarkers in a low cost disposable configuration.
The flexible x-ray detector technology was then extended to demonstrate the viability of a new technique to seamlessly combine multiple smaller flexible x-ray detectors into a single very large, ultimately human sized, composite x-ray detector for new medical imaging applications such as single-exposure, low-dose, full-body digital radiography. Also explored, is a new approach to increase the sensitivity of digital x-ray detectors by selectively disabling rows in the active matrix array that are not part of the imaged region. It was then shown how high-resolution, flexible, organic light-emitting diode display (OLED) technology can be used to selectively stimulate and/or silence small groups of neurons on the cortical surface or within the deep brain as a potential new tool to diagnose and treat, as well as understand, neurological diseases and conditions. This work also explored the viability of a new miniaturized high sensitivity fluorescence measurement-based lab-on-a-chip optical biosensor using OLED display and a-Si:H PiN photodiode active matrix array technology for point-of-care diagnosis of multiple disease or pathogen biomarkers in a low cost disposable configuration.
ContributorsSmith, Joseph T. (Author) / Allee, David (Thesis advisor) / Goryll, Michael (Committee member) / Kozicki, Michael (Committee member) / Blain Christen, Jennifer (Committee member) / Couture, Aaron (Committee member) / Arizona State University (Publisher)
Created2014
Description
CMOS Technology has been scaled down to 7 nm with FinFET replacing planar MOSFET devices. Due to short channel effects, the FinFET structure was developed to provide better electrostatic control on subthreshold leakage and saturation current over planar MOSFETs while having the desired current drive. The FinFET structure has an undoped or fully depleted fin, which supports immunity from random dopant fluctuations (RDF – a phenomenon which causes a reduction in the threshold voltage and is prominent at sub 50 nm tech nodes due to lesser dopant atoms) and thus causes threshold voltage (Vth) roll-off by reducing the Vth. However, as the advanced CMOS technologies are shrinking down to a 5 nm technology node, subthreshold leakage and drain-induced-barrier-lowering (DIBL) are driving the introduction of new metal-oxide-semiconductor field-effect transistor (MOSFET) structures to improve performance. GAA field effect transistors are shown to be the potential candidates for these advanced nodes. In nanowire devices, due to the presence of the gate on all sides of the channel, DIBL should be lower compared to the FinFETs.
A 3-D technology computer aided design (TCAD) device simulation is done to compare the performance of FinFET and GAA nanowire structures with vertically stacked horizontal nanowires. Subthreshold slope, DIBL & saturation current are measured and compared between these devices. The FinFET’s device performance has been matched with the ASAP7 compact model with the impact of tensile and compressive strain on NMOS & PMOS respectively. Metal work function is adjusted for the desired current drive. The nanowires have shown better electrostatic performance over FinFETs with excellent improvement in DIBL and subthreshold slope. This proves that horizontal nanowires can be the potential candidate for 5 nm technology node. A GAA nanowire structure for 5 nm tech node is characterized with a gate length of 15 nm. The structure is scaled down from 7 nm node to 5 nm by using a scaling factor of 0.7.
A 3-D technology computer aided design (TCAD) device simulation is done to compare the performance of FinFET and GAA nanowire structures with vertically stacked horizontal nanowires. Subthreshold slope, DIBL & saturation current are measured and compared between these devices. The FinFET’s device performance has been matched with the ASAP7 compact model with the impact of tensile and compressive strain on NMOS & PMOS respectively. Metal work function is adjusted for the desired current drive. The nanowires have shown better electrostatic performance over FinFETs with excellent improvement in DIBL and subthreshold slope. This proves that horizontal nanowires can be the potential candidate for 5 nm technology node. A GAA nanowire structure for 5 nm tech node is characterized with a gate length of 15 nm. The structure is scaled down from 7 nm node to 5 nm by using a scaling factor of 0.7.
ContributorsRana, Parshant (Author) / Clark, Lawrence (Thesis advisor) / Ferry, David (Committee member) / Brunhaver, John (Committee member) / Arizona State University (Publisher)
Created2017
Description
This thesis describes the design of a Single Event Transient (SET) duration measurement test-structure on the Global Foundries (previously IBM) 32-nm silicon-on insulator (SOI) process. The test structure is designed for portability and allows quick design and implementation on a new process node. Such a test structure is critical in analyzing the effects of radiation on complementary metal oxide semi-conductor (CMOS) circuits. The focus of this thesis is the change in pulse width during propagation of SET pulse and build a test structure to measure the duration of a SET pulse generated in real time. This test structure can estimate the SET pulse duration with 10ps resolution. It receives the input SET propagated through a SET capture structure made using a chain of combinational gates. The impact of propagation of the SET in a >200 deep collection structure is studied. A novel methodology of deploying Thick Gate TID structure is proposed and analyzed to build multi-stage chain of combinational gates. Upon using long chain of combinational gates, the most critical issue of pulse width broadening and shortening is analyzed across critical process corners. The impact of using regular standard cells on pulse width modification is compared with NMOS and/or PMOS skewed gates for the chain of combinational gates. A possible resolution to pulse width change is demonstrated using circuit and layout design of chain of inverters, two and three inputs NOR gates. The SET capture circuit is also tested in simulation by introducing a glitch signal that mimics an individual ion strike that could lead to perturbation in SET propagation. Design techniques and skewed gates are deployed to dampen the glitch that occurs under the effect of radiation. Simulation results, layout structures of SET capture circuit and chain of combinational gates are presented.
ContributorsMasand, Lovish (Author) / Clark, Lawrence (Thesis advisor) / Holbert, Keith E. (Committee member) / Barnaby, Hugh (Committee member) / Arizona State University (Publisher)
Created2017