Matching Items (203)
Description
With the increasing focus on developing environmentally benign electronic packages, lead-free solder alloys have received a great deal of attention. Mishandling of packages, during manufacture, assembly, or by the user may cause failure of solder joint. A fundamental understanding of the behavior of lead-free solders under mechanical shock conditions is lacking. Reliable experimental and numerical analysis of lead-free solder joints in the intermediate strain rate regime need to be investigated. This dissertation mainly focuses on exploring the mechanical shock behavior of lead-free tin-rich solder alloys via multiscale modeling and numerical simulations. First, the macroscopic stress/strain behaviors of three bulk lead-free tin-rich solders were tested over a range of strain rates from 0.001/s to 30/s. Finite element analysis was conducted to determine appropriate specimen geometry that could reach a homogeneous stress/strain field and a relatively high strain rate. A novel self-consistent true stress correction method is developed to compensate the inaccuracy caused by the triaxial stress state at the post-necking stage. Then the material property of micron-scale intermetallic was examined by micro-compression test. The accuracy of this measure is systematically validated by finite element analysis, and empirical adjustments are provided. Moreover, the interfacial property of the solder/intermetallic interface is investigated, and a continuum traction-separation law of this interface is developed from an atomistic-based cohesive element method. The macroscopic stress/strain relation and microstructural properties are combined together to form a multiscale material behavior via a stochastic approach for both solder and intermetallic. As a result, solder is modeled by porous plasticity with random voids, and intermetallic is characterized as brittle material with random vulnerable region. Thereafter, the porous plasticity fracture of the solders and the brittle fracture of the intermetallics are coupled together in one finite element model. Finally, this study yields a multiscale model to understand and predict the mechanical shock behavior of lead-free tin-rich solder joints. Different fracture patterns are observed for various strain rates and/or intermetallic thicknesses. The predictions have a good agreement with the theory and experiments.
ContributorsFei, Huiyang (Author) / Jiang, Hanqing (Thesis advisor) / Chawla, Nikhilesh (Thesis advisor) / Tasooji, Amaneh (Committee member) / Mobasher, Barzin (Committee member) / Rajan, Subramaniam D. (Committee member) / Arizona State University (Publisher)
Created2011
Description
Radiation-induced gain degradation in bipolar devices is considered to be the primary threat to linear bipolar circuits operating in the space environment. The damage is primarily caused by charged particles trapped in the Earth's magnetosphere, the solar wind, and cosmic rays. This constant radiation exposure leads to early end-of-life expectancies for many electronic parts. Exposure to ionizing radiation increases the density of oxide and interfacial defects in bipolar oxides leading to an increase in base current in bipolar junction transistors. Radiation-induced excess base current is the primary cause of current gain degradation. Analysis of base current response can enable the measurement of defects generated by radiation exposure. In addition to radiation, the space environment is also characterized by extreme temperature fluctuations. Temperature, like radiation, also has a very strong impact on base current. Thus, a technique for separating the effects of radiation from thermal effects is necessary in order to accurately measure radiation-induced damage in space. This thesis focuses on the extraction of radiation damage in lateral PNP bipolar junction transistors and the space environment. It also describes the measurement techniques used and provides a quantitative analysis methodology for separating radiation and thermal effects on the bipolar base current.
ContributorsCampola, Michael J (Author) / Barnaby, Hugh J (Thesis advisor) / Holbert, Keith E. (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2011
Description
The increased use of commercial complementary metal-oxide-semiconductor (CMOS) technologies in harsh radiation environments has resulted in a new approach to radiation effects mitigation. This approach utilizes simulation to support the design of integrated circuits (ICs) to meet targeted tolerance specifications. Modeling the deleterious impact of ionizing radiation on ICs fabricated in advanced CMOS technologies requires understanding and analyzing the basic mechanisms that result in buildup of radiation-induced defects in specific sensitive regions. Extensive experimental studies have demonstrated that the sensitive regions are shallow trench isolation (STI) oxides. Nevertheless, very little work has been done to model the physical mechanisms that result in the buildup of radiation-induced defects and the radiation response of devices fabricated in these technologies. A comprehensive study of the physical mechanisms contributing to the buildup of radiation-induced oxide trapped charges and the generation of interface traps in advanced CMOS devices is presented in this dissertation. The basic mechanisms contributing to the buildup of radiation-induced defects are explored using a physical model that utilizes kinetic equations that captures total ionizing dose (TID) and dose rate effects in silicon dioxide (SiO2). These mechanisms are formulated into analytical models that calculate oxide trapped charge density (Not) and interface trap density (Nit) in sensitive regions of deep-submicron devices. Experiments performed on field-oxide-field-effect-transistors (FOXFETs) and metal-oxide-semiconductor (MOS) capacitors permit investigating TID effects and provide a comparison for the radiation response of advanced CMOS devices. When used in conjunction with closed-form expressions for surface potential, the analytical models enable an accurate description of radiation-induced degradation of transistor electrical characteristics. In this dissertation, the incorporation of TID effects in advanced CMOS devices into surface potential based compact models is also presented. The incorporation of TID effects into surface potential based compact models is accomplished through modifications of the corresponding surface potential equations (SPE), allowing the inclusion of radiation-induced defects (i.e., Not and Nit) into the calculations of surface potential. Verification of the compact modeling approach is achieved via comparison with experimental data obtained from FOXFETs fabricated in a 90 nm low-standby power commercial bulk CMOS technology and numerical simulations of fully-depleted (FD) silicon-on-insulator (SOI) n-channel transistors.
ContributorsSanchez Esqueda, Ivan (Author) / Barnaby, Hugh J (Committee member) / Schroder, Dieter (Thesis advisor) / Schroder, Dieter K. (Committee member) / Holbert, Keith E. (Committee member) / Gildenblat, Gennady (Committee member) / Arizona State University (Publisher)
Created2011
Description
Programmable Metallization Cell (PMC) is a technology platform which utilizes mass transport in solid or liquid electrolyte coupled with electrochemical (redox) reactions to form or remove nanoscale metallic electrodeposits on or in the electrolyte. The ability to redistribute metal mass and form metallic nanostructure in or on a structure in situ, via the application of a bias on laterally placed electrodes, creates a large number of promising applications. A novel PMC-based lateral microwave switch was fabricated and characterized for use in microwave systems. It has demonstrated low insertion loss, high isolation, low voltage operation, low power and low energy consumption, and excellent linearity. Due to its non-volatile nature the switch operates with fewer biases and its simple planar geometry makes possible innovative device structures which can be potentially integrated into microwave power distribution circuits. PMC technology is also used to develop lateral dendritic metal electrodes. A lateral metallic dendritic network can be grown in a solid electrolyte (GeSe) or electrodeposited on SiO2 or Si using a water-mediated method. These dendritic electrodes grown in a solid electrolyte (GeSe) can be used to lower resistances for applications like self-healing interconnects despite its relatively low light transparency; while the dendritic electrodes grown using water-mediated method can be potentially integrated into solar cell applications, like replacing conventional Ag screen-printed top electrodes as they not only reduce resistances but also are highly transparent. This research effort also laid a solid foundation for developing dendritic plasmonic structures. A PMC-based lateral dendritic plasmonic structure is a device that has metallic dendritic networks grown electrochemically on SiO2 with a thin layer of surface metal nanoparticles in liquid electrolyte. These structures increase the distribution of particle sizes by connecting pre-deposited Ag nanoparticles into fractal structures and result in three significant effects, resonance red-shift, resonance broadening and resonance enhancement, on surface plasmon resonance for light trapping simultaneously, which can potentially enhance thin film solar cells' performance at longer wavelengths.
ContributorsRen, Minghan (Author) / Kozicki, Michael (Thesis advisor) / Schroder, Dieter (Committee member) / Roedel, Ronald (Committee member) / Barnaby, Hugh (Committee member) / Arizona State University (Publisher)
Created2011
Description
Hydropower generation is one of the clean renewable energies which has received great attention in the power industry. Hydropower has been the leading source of renewable energy. It provides more than 86% of all electricity generated by renewable sources worldwide. Generally, the life span of a hydropower plant is considered as 30 to 50 years. Power plants over 30 years old usually conduct a feasibility study of rehabilitation on their entire facilities including infrastructure. By age 35, the forced outage rate increases by 10 percentage points compared to the previous year. Much longer outages occur in power plants older than 20 years. Consequently, the forced outage rate increases exponentially due to these longer outages. Although these long forced outages are not frequent, their impact is immense. If reasonable timing of rehabilitation is missed, an abrupt long-term outage could occur and additional unnecessary repairs and inefficiencies would follow. On the contrary, too early replacement might cause the waste of revenue. The hydropower plants of Korea Water Resources Corporation (hereafter K-water) are utilized for this study. Twenty-four K-water generators comprise the population for quantifying the reliability of each equipment. A facility in a hydropower plant is a repairable system because most failures can be fixed without replacing the entire facility. The fault data of each power plant are collected, within which only forced outage faults are considered as raw data for reliability analyses. The mean cumulative repair functions (MCF) of each facility are determined with the failure data tables, using Nelson's graph method. The power law model, a popular model for a repairable system, can also be obtained to represent representative equipment and system availability. The criterion-based analysis of HydroAmp is used to provide more accurate reliability of each power plant. Two case studies are presented to enhance the understanding of the availability of each power plant and represent economic evaluations for modernization. Also, equipment in a hydropower plant is categorized into two groups based on their reliability for determining modernization timing and their suitable replacement periods are obtained using simulation.
ContributorsKwon, Ogeuk (Author) / Holbert, Keith E. (Thesis advisor) / Heydt, Gerald T (Committee member) / Pan, Rong (Committee member) / Arizona State University (Publisher)
Created2011
Description
Early-age cracks in fresh concrete occur mainly due to high rate of surface evaporation and restraint offered by the contracting solid phase. Available test methods that simulate severe drying conditions, however, were not originally designed to focus on evaporation and transport characteristics of the liquid-gas phases in a hydrating cementitious microstructure. Therefore, these tests lack accurate measurement of the drying rate and data interpretation based on the principles of transport properties is limited. A vacuum-based test method capable of simulating early-age cracks in 2-D cement paste is developed which continuously monitors the weight loss and changes to the surface characteristics. 2-D crack evolution is documented using time-lapse photography. Effects of sample size, w/c ratio, initial curing and fiber content are studied. In the subsequent analysis, the cement paste phase is considered as a porous medium and moisture transport is described based on surface mass transfer and internal moisture transport characteristics. Results indicate that drying occurs in two stages: constant drying rate period (stage I), followed by a falling drying rate period (stage II). Vapor diffusion in stage I and unsaturated flow within porous medium in stage II determine the overall rate of evaporation. The mass loss results are analyzed using diffusion-based models. Results show that moisture diffusivity in stage I is higher than its value in stage II by more than one order of magnitude. The drying model is used in conjunction with a shrinkage model to predict the development of capillary pressures. Similar approach is implemented in drying restrained ring specimens to predict 1-D crack width development. An analytical approach relates diffusion, shrinkage, creep, tensile and fracture properties to interpret the experimental data. Evaporation potential is introduced based on the boundary layer concept, mass transfer, and a driving force consisting of the concentration gradient. Effect of wind velocity is reflected on Reynolds number which affects the boundary layer on sample surface. This parameter along with Schmidt and Sherwood numbers are used for prediction of mass transfer coefficient. Concentration gradient is shown to be a strong function of temperature and relative humidity and used to predict the evaporation potential. Results of modeling efforts are compared with a variety of test results reported in the literature. Diffusivity data and results of 1-D and 2-D image analyses indicate significant effects of fibers on controlling early-age cracks. Presented models are capable of predicting evaporation rates and moisture flow through hydrating cement-based materials during early-age drying and shrinkage conditions.
ContributorsBakhshi, Mehdi (Author) / Mobasher, Barzin (Thesis advisor) / Rajan, Subramaniam D. (Committee member) / Zapata, Claudia E. (Committee member) / Arizona State University (Publisher)
Created2011
Description
Ever reducing time to market, along with short product lifetimes, has created a need to shorten the microprocessor design time. Verification of the design and its analysis are two major components of this design cycle. Design validation techniques can be broadly classified into two major categories: simulation based approaches and formal techniques. Simulation based microprocessor validation involves running millions of cycles using random or pseudo random tests and allows verification of the register transfer level (RTL) model against an architectural model, i.e., that the processor executes instructions as required. The validation effort involves model checking to a high level description or simulation of the design against the RTL implementation. Formal techniques exhaustively analyze parts of the design but, do not verify RTL against the architecture specification. The focus of this work is to implement a fully automated validation environment for a MIPS based radiation hardened microprocessor using simulation based approaches. The basic framework uses the classical validation approach in which the design to be validated is described in a Hardware Definition Language (HDL) such as VHDL or Verilog. To implement a simulation based approach a number of random or pseudo random tests are generated. The output of the HDL based design is compared against the one obtained from a "perfect" model implementing similar functionality, a mismatch in the results would thus indicate a bug in the HDL based design. Effort is made to design the environment in such a manner that it can support validation during different stages of the design cycle. The validation environment includes appropriate changes so as to support architecture changes which are introduced because of radiation hardening. The manner in which the validation environment is build is highly dependent on the specifications of the perfect model used for comparisons. This work implements the validation environment for two MIPS simulators as the reference model. Two bugs have been discovered in the RTL model, using simulation based approaches through the validation environment.
ContributorsSharma, Abhishek (Author) / Clark, Lawrence (Thesis advisor) / Holbert, Keith E. (Committee member) / Shrivastava, Aviral (Committee member) / Arizona State University (Publisher)
Created2011
Description
Optical receivers have many different uses covering simple infrared receivers, high speed fiber optic communication and light based instrumentation. All of them have an optical receiver that converts photons to current followed by a transimpedance amplifier to convert the current to a useful voltage. Different systems create different requirements for each receiver. High speed digital communication require high throughput with enough sensitivity to keep the bit error rate low. Instrumentation receivers have a lower bandwidth, but higher gain and sensitivity requirements. In this thesis an optical receiver for use in instrumentation in presented. It is an entirely monolithic design with the photodiodes on the same substrate as the CMOS circuitry. This allows for it to be built into a focal-plane array, but it places some restriction on the area. It is also designed for in-situ testing and must be able to cancel any low frequency noise caused by ambient light. The area restrictions prohibit the use of a DC blocking capacitor to reject the low frequency noise. In place a servo loop was wrapped around the system to reject any DC offset. A modified Cherry-Hooper architecture was used for the transimpedance amplifier. This provides the flexibility to create an amplifier with high gain and wide bandwidth that is independent of the input capacitance. The downside is the increased complexity of the design makes stability paramount to the design. Another drawback is the high noise associated with low input impedance that decouples the input capacitance from the bandwidth. This problem is compounded by the servo loop feed which leaves the output noise of some amplifiers directly referred to the input. An in depth analysis of each circuit block's noise contribution is presented.
ContributorsLaFevre, Kyle (Author) / Bakkaloglu, Bertan (Thesis advisor) / Barnaby, Hugh (Committee member) / Vermeire, Bert (Committee member) / Arizona State University (Publisher)
Created2011
Description
High Voltage Direct Current (HVDC) technology is being considered for several long distance point-to-point overhead transmission lines, because of their lower losses and higher transmission capability, when compared to AC systems. Insulators are used to support and isolate the conductors mechanically and electrically. Composite insulators are gaining popularity for both AC and DC lines, for the reasons of light weight and good performance under contaminated conditions. This research illustrates the electric potential and field computation on HVDC composite insulators by using the charge simulation method. The electric field is calculated under both dry and wet conditions. Under dry conditions, the field distributions along the insulators whose voltage levels range from 500 kV to 1200 kV are calculated and compared. The results indicate that the HVDC insulator produces higher electric field, when compared to AC insulator. Under wet conditions, a 500 kV insulator is modeled with discrete water droplets on the surface. In this case, the field distribution is affected by surface resistivity and separations between droplets. The corona effects on insulators are analyzed for both dry and wet conditions. Corona discharge is created, when electric field strength exceeds the threshold value. Corona and grading rings are placed near the end-fittings of the insulators to reduce occurrence of corona. The dimensions of these rings, specifically their radius, tube thickness and projection from end fittings are optimized. This will help the utilities design proper corona and grading rings to reduce the corona phenomena.
ContributorsHe, Jiahong (Author) / Gorur, Ravi S (Committee member) / Ayyanar, Raja (Committee member) / Holbert, Keith E. (Committee member) / Arizona State University (Publisher)
Created2013
Description
Chalcogenide glass (ChG) materials have gained wide attention because of their applications in conductive bridge random access memory (CBRAM), phase change memories (PC-RAM), optical rewritable disks (CD-RW and DVD-RW), microelectromechanical systems (MEMS), microfluidics, and optical communications. One of the significant properties of ChG materials is the change in the resistivity of the material when a metal such as Ag or Cu is added to it by diffusion. This study demonstrates the potential radiation-sensing capabilities of two metal/chalcogenide glass device configurations. Lateral and vertical device configurations sense the radiation-induced migration of Ag+ ions in germanium selenide glasses via changes in electrical resistance between electrodes on the ChG. Before irradiation, these devices exhibit a high-resistance `OFF-state' (in the order of 10E12) but following irradiation, with either 60-Co gamma-rays or UV light, their resistance drops to a low-resistance `ON-state' (around 10E3). Lateral devices have exhibited cyclical recovery with room temperature annealing of the Ag doped ChG, which suggests potential uses in reusable radiation sensor applications. The feasibility of producing inexpensive flexible radiation sensors has been demonstrated by studying the effects of mechanical strain and temperature stress on sensors formed on flexible polymer substrate. The mechanisms of radiation-induced Ag/Ag+ transport and reactions in ChG have been modeled using a finite element device simulator, ATLAS. The essential reactions captured by the simulator are radiation-induced carrier generation, combined with reduction/oxidation for Ag species in the chalcogenide film. Metal-doped ChGs are solid electrolytes that have both ionic and electronic conductivity. The ChG based Programmable Metallization Cell (PMC) is a technology platform that offers electric field dependent resistance switching mechanisms by formation and dissolution of nano sized conductive filaments in a ChG solid electrolyte between oxidizable and inert electrodes. This study identifies silver anode agglomeration in PMC devices following large radiation dose exposure and considers device failure mechanisms via electrical and material characterization. The results demonstrate that by changing device structural parameters, silver agglomeration in PMC devices can be suppressed and reliable resistance switching may be maintained for extremely high doses ranging from 4 Mrad(GeSe) to more than 10 Mrad (ChG).
ContributorsDandamudi, Pradeep (Author) / Kozicki, Michael N (Thesis advisor) / Barnaby, Hugh J (Committee member) / Holbert, Keith E. (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2013