Matching Items (193)
Description
As the 3rd generation solar cell, quantum dot solar cells are expected to outperform the first 2 generations with higher efficiency and lower manufacture cost. Currently the main problems for QD cells are the low conversion efficiency and stability. This work is trying to improve the reliability as well as the device performance by inserting an interlayer between the metal cathode and the active layer. Titanium oxide and a novel nitrogen doped titanium oxide were compared and TiOxNy capped device shown a superior performance and stability to TiOx capped one. A unique light anneal effect on the interfacial layer was discovered first time and proved to be the trigger of the enhancement of both device reliability and efficiency. The efficiency was improved by 300% and the device can retain 73.1% of the efficiency with TiOxNy when normal device completely failed after kept for long time. Photoluminescence indicted an increased charge disassociation rate at TiOxNy interface. External quantum efficiency measurement also inferred a significant performance enhancement in TiOxNy capped device, which resulted in a higher photocurrent. X-ray photoelectron spectrometry was performed to explain the impact of light doping on optical band gap. Atomic force microscopy illustrated the effect of light anneal on quantum dot polymer surface. The particle size is increased and the surface composition is changed after irradiation. The mechanism for performance improvement via a TiOx based interlayer was discussed based on a trap filling model. Then Tunneling AFM was performed to further confirm the reliability of interlayer capped organic photovoltaic devices. As a powerful tool based on SPM technique, tunneling AFM was able to explain the reason for low efficiency in non-capped inverted organic photovoltaic devices. The local injection properties as well as the correspondent topography were compared in organic solar cells with or without TiOx interlayer. The current-voltage characteristics were also tested at a single interested point. A severe short-circuit was discovered in non capped devices and a slight reverse bias leakage current was also revealed in TiOx capped device though tunneling AFM results. The failure reason for low stability in normal devices was also discussed comparing to capped devices.
ContributorsYu, Jialin (Author) / Jabbour, Ghassan E. (Thesis advisor) / Alford, Terry L. (Thesis advisor) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2011
Description
Amorphous oxide semiconductors are promising new materials for various optoelectronic applications. In this study, improved electrical and optical properties upon thermal and microwave processing of mixed-oxide semiconductors are reported. First, arsenic-doped silicon was used as a model system to understand susceptor-assisted microwave annealing. Mixed oxide semiconductor films of indium zinc oxide (IZO) and indium gallium zinc oxide (IGZO) were deposited by room-temperature RF sputtering on flexible polymer substrates. Thermal annealing in different environments - air, vacuum and oxygen was done. Electrical and optical characterization was carried out before and after annealing. The degree of reversal in the degradation in electrical properties of the thin films upon annealing in oxygen was assessed by subjecting samples to subsequent vacuum anneals. To further increase the conductivity of the IGZO films, Ag layers of various thicknesses were embedded between two IGZO layers. Optical performance of the multilayer structures was improved by susceptor-assisted microwave annealing and furnace-annealing in oxygen environment without compromising on their electrical conductivity. The post-processing of the films in different environments was used to develop an understanding of mechanisms of carrier generation, transport and optical absorption. This study establishes IGZO as a viable transparent conductor, which can be deposited at room-temperature and processed by thermal and microwave annealing to improve electrical and optical performance for applications in flexible electronics and optoelectronics.
ContributorsGadre, Mandar (Author) / Alford, Terry L. (Thesis advisor) / Schroder, Dieter (Committee member) / Krause, Stephen (Committee member) / Theodore, David (Committee member) / Arizona State University (Publisher)
Created2011
Description
Infant mortality rate of field deployed photovoltaic (PV) modules may be expected to be higher than that estimated by standard qualification tests. The reason for increased failure rates may be attributed to the high system voltages. High voltages (HV) in grid connected modules induce additional stress factors that cause new degradation mechanisms. These new degradation mechanisms are not recognized by qualification stress tests. To study and model the effect of high system voltages, recently, potential induced degradation (PID) test method has been introduced. Using PID studies, it has been reported that high voltage failure rates are essentially due to increased leakage currents from active semiconducting layer to the grounded module frame, through encapsulant and/or glass. This project involved designing and commissioning of a new PID test bed at Photovoltaic Reliability Laboratory (PRL) of Arizona State University (ASU) to study the mechanisms of HV induced degradation. In this study, PID stress tests have been performed on accelerated stress modules, in addition to fresh modules of crystalline silicon technology. Accelerated stressing includes thermal cycling (TC200 cycles) and damp heat (1000 hours) tests as per IEC 61215. Failure rates in field deployed modules that are exposed to long term weather conditions are better simulated by conducting HV tests on prior accelerated stress tested modules. The PID testing was performed in 3 phases on a set of 5 mono crystalline silicon modules. In Phase-I of PID test, a positive bias of +600 V was applied, between shorted leads and frame of each module, on 3 modules with conducting carbon coating on glass superstrate. The 3 module set was comprised of: 1 fresh control, TC200 and DH1000. The PID test was conducted in an environmental chamber by stressing the modules at 85°C, for 35 hours with an intermittent evaluation for Arrhenius effects. In the Phase-II, a negative bias of -600 V was applied on a set of 3 modules in the chamber as defined above. The 3 module set in phase-II was comprised of: control module from phase-I, TC200 and DH1000. In the Phase-III, the same set of 3 modules which were used in the phase-II again subjected to +600 V bias to observe the recovery of lost power during the Phase-II. Electrical performance, infrared (IR) and electroluminescence (EL) were done prior and post PID testing. It was observed that high voltage positive bias in the first phase resulted in little
o power loss, high voltage negative bias in the second phase caused significant power loss and the high voltage positive bias in the third phase resulted in major recovery of lost power.
o power loss, high voltage negative bias in the second phase caused significant power loss and the high voltage positive bias in the third phase resulted in major recovery of lost power.
ContributorsGoranti, Sandhya (Author) / Tamizhmani, Govindasamy (Thesis advisor) / Rogers, Bradley (Committee member) / Macia, Narciso (Committee member) / Arizona State University (Publisher)
Created2011
Description
In nearly all commercially successful internal combustion engine applications, the slider crank mechanism is used to convert the reciprocating motion of the piston into rotary motion. The hypocycloid mechanism, wherein the crankshaft is replaced with a novel gearing arrangement, is a viable alternative to the slider crank mechanism. The geared hypocycloid mechanism allows for linear motion of the connecting rod and provides a method for perfect balance with any number of cylinders including single cylinder applications. A variety of hypocycloid engine designs and research efforts have been undertaken and produced successful running prototypes. Wiseman Technologies, Inc provided one of these prototypes to this research effort. This two-cycle 30cc half crank hypocycloid engine has shown promise in several performance categories including balance and efficiency. To further investigate its potential a more thorough and scientific analysis was necessary and completed in this research effort. The major objective of the research effort was to critically evaluate and optimize the Wiseman prototype for maximum performance in balance, efficiency, and power output. A nearly identical slider crank engine was used extensively to establish baseline performance data and make comparisons. Specialized equipment and methods were designed and built to collect experimental data on both engines. Simulation and mathematical models validated by experimental data collection were used to better quantify performance improvements. Modifications to the Wiseman prototype engine improved balance by 20 to 50% (depending on direction) and increased peak power output by 24%.
ContributorsConner, Thomas (Author) / Redkar, Sangram (Thesis advisor) / Rogers, Bradley (Committee member) / Georgeou, Trian (Committee member) / Arizona State University (Publisher)
Created2011
Description
Building Applied Photovoltaics (BAPV) form an essential part of today's solar economy. This thesis is an effort to compare and understand the effect of fan cooling on the temperature of rooftop photovoltaic (PV) modules by comparing two side-by-side arrays (test array and control array) under identical ambient conditions of irradiance, air temperature, wind speed and wind direction. The lower operating temperature of PV modules due to fan operation mitigates array non uniformity and improves on performance. A crystalline silicon (c-Si) PV module has a light to electrical conversion efficiency of 14-20%. So on a cool sunny day with incident solar irradiance of 1000 W/m2, a PV module with 15% efficiency, will produce about only 150 watts. The rest of the energy is primarily lost in the form of heat. Heat extraction methods for BAPV systems may become increasingly higher in demand as the hot stagnant air underneath the array can be extracted to improve the array efficiency and the extracted low-temperature heat can also be used for residential space heating and water heating. Poly c-Si modules experience a negative temperature coefficient of power at about -0.5% /o C. A typical poly c-Si module would experience power loss due to elevation in temperature, which may be in the range of 25 to 30% for desert conditions such as that of Mesa, Arizona. This thesis investigates the effect of fan cooling on the previously developed thermal models at Arizona State University and on the performance of PV modules/arrays. Ambient conditions are continuously monitored and collected to calculate module temperature using the thermal model and to compare with actually measured temperature of individual modules. Including baseline analysis, the thesis has also looked into the effect of fan on the test array in three stages of 14 continuous days each. Multiple Thermal models are developed in order to identify the effect of fan cooling on performance and temperature uniformity. Although the fan did not prove to have much significant cooling effect on the system, but when combined with wind blocks it helped improve the thermal mismatch both under low and high wind speed conditions.
ContributorsChatterjee, Saurabh (Author) / Tamizhmani, Govindasamy (Thesis advisor) / Rogers, Bradley (Committee member) / Macia, Narciso (Committee member) / Arizona State University (Publisher)
Created2011
Description
Photovoltaic (PV) modules undergo performance degradation depending on climatic conditions, applications, and system configurations. The performance degradation prediction of PV modules is primarily based on Accelerated Life Testing (ALT) procedures. In order to further strengthen the ALT process, additional investigation of the power degradation of field aged PV modules in various configurations is required. A detailed investigation of 1,900 field aged (12-18 years) PV modules deployed in a power plant application was conducted for this study. Analysis was based on the current-voltage (I-V) measurement of all the 1,900 modules individually. I-V curve data of individual modules formed the basis for calculating the performance degradation of the modules. The percentage performance degradation and rates of degradation were compared to an earlier study done at the same plant. The current research was primarily focused on identifying the extent of potential induced degradation (PID) of individual modules with reference to the negative ground potential. To investigate this, the arrangement and connection of the individual modules/strings was examined in detail. The study also examined the extent of underperformance of every series string due to performance mismatch of individual modules in that string. The power loss due to individual module degradation and module mismatch at string level was then compared to the rated value.
ContributorsJaspreet Singh (Author) / Tamizhmani, Govindasamy (Thesis advisor) / Srinivasan, Devarajan (Committee member) / Rogers, Bradley (Committee member) / Arizona State University (Publisher)
Created2011
Description
There will always be a need for high current/voltage transistors. A transistor that has the ability to be both or either of these things is the silicon metal-silicon field effect transistor (MESFET). An additional perk that silicon MESFET transistors have is the ability to be integrated into the standard silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) process flow. This makes a silicon MESFET transistor a very valuable device for use in any standard CMOS circuit that may usually need a separate integrated circuit (IC) in order to switch power on or from a high current/voltage because it allows this function to be performed with a single chip thereby cutting costs. The ability for the MESFET to cost effectively satisfy the needs of this any many other high current/voltage device application markets is what drives the study of MESFET optimization. Silicon MESFETs that are integrated into standard SOI CMOS processes often receive dopings during fabrication that would not ideally be there in a process made exclusively for MESFETs. Since these remnants of SOI CMOS processing effect the operation of a MESFET device, their effect can be seen in the current-voltage characteristics of a measured MESFET device. Device simulations are done and compared to measured silicon MESFET data in order to deduce the cause and effect of many of these SOI CMOS remnants. MESFET devices can be made in both fully depleted (FD) and partially depleted (PD) SOI CMOS technologies. Device simulations are used to do a comparison of FD and PD MESFETs in order to show the advantages and disadvantages of MESFETs fabricated in different technologies. It is shown that PD MESFET have the highest current per area capability. Since the PD MESFET is shown to have the highest current capability, a layout optimization method to further increase the current per area capability of the PD silicon MESFET is presented, derived, and proven to a first order.
ContributorsSochacki, John (Author) / Thornton, Trevor J (Thesis advisor) / Schroder, Dieter (Committee member) / Vasileska, Dragica (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2011
Description
ABSTRACT The purpose of this study is to demonstrate that stable lipid bilayers can be set up on an array of silicon micropores and can be used as sites for self-inserting ion-channel proteins which can be studied independently of each other. In course of this study an acrylic based holder was designed and machined to ensure leak-free fluidic access to the silicon micropores and physical isolation of the individual array channels. To measure the ion-channel currents, we simulated, designed and manufactured low-noise transimpedance amplifiers and support circuits based on published patch clamp amplifier designs, using currently available surface-mount components. This was done in order to achieve a reduction in size and costs as well as isolation of individual channels without the need for multiplexing of the input. During the experiments performed, stable bilayers were formed across an array of four vertically mounted 30 µm silicon micropores and OmpF porins were added for self insertion in each of the bilayers. To further demonstrate the independence of these bilayer recording sites, the antibiotic Ampicillin (2.5 mM) was added to one of the fluidic wells. The ionic current in each of the wells was recorded simultaneously. Sub-conductance states of Ompf porin were observed in two of the measurement sites. In addition, the conductance steps in the site containing the antibiotic could be clearly seen to be larger compared to those of the unmodified site. This is due to the transient blocking of ion flow through the porin due to translocation of the antibiotic. Based on this demonstration, ion-channel array reconstitution is a potential method for efficient electrophysiological characterization of different types of ion-channels simultaneously as well as for studying membrane permeation processes.
ContributorsRamakrishnan, Shankar (Author) / Goryll, Michael (Thesis advisor) / Thornton, Trevor J (Committee member) / Blain Christen, Jennifer M (Committee member) / Arizona State University (Publisher)
Created2011
Description
In the last few years, significant advances in nanofabrication have allowed tailoring of structures and materials at a molecular level enabling nanofabrication with precise control of dimensions and organization at molecular length scales, a development leading to significant advances in nanoscale systems. Although, the direction of progress seems to follow the path of microelectronics, the fundamental physics in a nanoscale system changes more rapidly compared to microelectronics, as the size scale is decreased. The changes in length, area, and volume ratios due to reduction in size alter the relative influence of various physical effects determining the overall operation of a system in unexpected ways. One such category of nanofluidic structures demonstrating unique ionic and molecular transport characteristics are nanopores. Nanopores derive their unique transport characteristics from the electrostatic interaction of nanopore surface charge with aqueous ionic solutions. In this doctoral research cylindrical nanopores, in single and array configuration, were fabricated in silicon-on-insulator (SOI) using a combination of electron beam lithography (EBL) and reactive ion etching (RIE). The fabrication method presented is compatible with standard semiconductor foundries and allows fabrication of nanopores with desired geometries and precise dimensional control, providing near ideal and isolated physical modeling systems to study ion transport at the nanometer level. Ion transport through nanopores was characterized by measuring ionic conductances of arrays of nanopores of various diameters for a wide range of concentration of aqueous hydrochloric acid (HCl) ionic solutions. Measured ionic conductances demonstrated two distinct regimes based on surface charge interactions at low ionic concentrations and nanopore geometry at high ionic concentrations. Field effect modulation of ion transport through nanopore arrays, in a fashion similar to semiconductor transistors, was also studied. Using ionic conductance measurements, it was shown that the concentration of ions in the nanopore volume was significantly changed when a gate voltage on nanopore arrays was applied, hence controlling their transport. Based on the ion transport results, single nanopores were used to demonstrate their application as nanoscale particle counters by using polystyrene nanobeads, monodispersed in aqueous HCl solutions of different molarities. Effects of field effect modulation on particle transition events were also demonstrated.
ContributorsJoshi, Punarvasu (Author) / Thornton, Trevor J (Thesis advisor) / Goryll, Michael (Thesis advisor) / Spanias, Andreas (Committee member) / Saraniti, Marco (Committee member) / Arizona State University (Publisher)
Created2011
Description
This thesis discusses the use of low temperature microwave anneal as an alternative technique to recrystallize materials damaged or amorphized due to implantation techniques. The work focuses on the annealing of high-Z doped Si wafers that are incapable of attaining high temperatures required for recrystallizing the damaged implanted layers by microwave absorption The increasing necessity for quicker and more efficient processing techniques motivates study of the use of a single frequency applicator microwave cavity along with a Fe2O3 infused SiC-alumina susceptor/applicator as an alternative post implantation process. Arsenic implanted Si samples of different dopant concentrations and implantation energies were studied pre and post microwave annealing. A set of as-implanted Si samples were also used to assess the effect of inactive dopants against presence of electrically active dopants on the recrystallization mechanisms. The extent of damage repair and Si recrystallization of the damage caused by arsenic and Si implantation of Si is determined by cross-section transmission electron microscopy and Raman spectroscopy. Dopant activation is evaluated for the As implanted Si by sheet resistance measurements. For the same, secondary ion mass spectroscopy analysis is used to compare the extent of diffusion that results from such microwave annealing with that experienced when using conventional rapid thermal annealing (RTA). Results show that compared to susceptor assisted microwave annealing, RTA caused undesired dopant diffusion. The SiC-alumina susceptor plays a predominant role in supplying heat to the Si substrate, and acts as an assistor that helps a high-Z dopant like arsenic to absorb the microwave energy using a microwave loss mechanism which is a combination of ionic and dipole losses. Comparisons of annealing of the samples were done with and without the use of the susceptor, and confirm the role played by the susceptor, since the samples donot recrystallize when the surface heating mechanism provided by the susceptor is not incorporated. Variable frequency microwave annealing was also performed over the as-implanted Si samples for durations and temperatures higher than the single frequency microwave anneal, but only partial recrystallization of the damaged layer was achieved.
ContributorsVemuri, Rajitha (Author) / Alford, Terry L. (Thesis advisor) / Theodore, David (Committee member) / Krause, Stephen (Committee member) / Arizona State University (Publisher)
Created2011