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- Genre: Masters Thesis
Description
Topological insulators with conducting surface states yet insulating bulk states have generated a lot of interest amongst the physics community due to their varied characteristics and possible applications. Doped topological insulators have presented newer physical states of matter where topological order co&ndashexists; with other physical properties (like magnetic order). The electronic states of these materials are very intriguing and pose problems and the possible solutions to understanding their unique behaviors. In this work, we use Electron Energy Loss Spectroscopy (EELS) – an analytical TEM tool to study both core&ndashlevel; and valence&ndashlevel; excitations in Bi2Se3 and Cu(doped)Bi2Se3 topological insulators. We use this technique to retrieve information on the valence, bonding nature, co-ordination and lattice site occupancy of the undoped and the doped systems. Using the reference materials Cu(I)Se and Cu(II)Se we try to compare and understand the nature of doping that copper assumes in the lattice. And lastly we utilize the state of the art monochromated Nion UltraSTEM 100 to study electronic/vibrational excitations at a record energy resolution from sub-nm regions in the sample.
ContributorsSubramanian, Ganesh (Author) / Spence, John (Thesis advisor) / Jiang, Nan (Committee member) / Chen, Tingyong (Committee member) / Chan, Candace (Committee member) / Arizona State University (Publisher)
Created2013
Description
Carrier lifetime is one of the few parameters which can give information about the low defect densities in today's semiconductors. In principle there is no lower limit to the defect density determined by lifetime measurements. No other technique can easily detect defect densities as low as 10-9 - 10-10 cm-3 in a simple, contactless room temperature measurement. However in practice, recombination lifetime τr measurements such as photoconductance decay (PCD) and surface photovoltage (SPV) that are widely used for characterization of bulk wafers face serious limitations when applied to thin epitaxial layers, where the layer thickness is smaller than the minority carrier diffusion length Ln. Other methods such as microwave photoconductance decay (µ-PCD), photoluminescence (PL), and frequency-dependent SPV, where the generated excess carriers are confined to the epitaxial layer width by using short excitation wavelengths, require complicated configuration and extensive surface passivation processes that make them time-consuming and not suitable for process screening purposes. Generation lifetime τg, typically measured with pulsed MOS capacitors (MOS-C) as test structures, has been shown to be an eminently suitable technique for characterization of thin epitaxial layers. It is for these reasons that the IC community, largely concerned with unipolar MOS devices, uses lifetime measurements as a "process cleanliness monitor." However when dealing with ultraclean epitaxial wafers, the classic MOS-C technique measures an effective generation lifetime τg eff which is dominated by the surface generation and hence cannot be used for screening impurity densities. I have developed a modified pulsed MOS technique for measuring generation lifetime in ultraclean thin p/p+ epitaxial layers which can be used to detect metallic impurities with densities as low as 10-10 cm-3. The widely used classic version has been shown to be unable to effectively detect such low impurity densities due to the domination of surface generation; whereas, the modified version can be used suitably as a metallic impurity density monitoring tool for such cases.
ContributorsElhami Khorasani, Arash (Author) / Alford, Terry (Thesis advisor) / Goryll, Michael (Committee member) / Bertoni, Mariana (Committee member) / Arizona State University (Publisher)
Created2013
Description
In the interest of expediting future pilot line start-ups for solar cell research, the development of Arizona State University's student-led pilot line at the Solar Power Laboratory is discussed extensively within this work. Several experiments and characterization techniques used to formulate and optimize a series of processes for fabricating diffused-junction, screen-printed silicon solar cells are expounded upon. An experiment is conducted in which the thickness of a PECVD deposited anti-reflection coating (ARC) is varied across several samples and modeled as a function of deposition time. Using this statistical model in tandem with reflectance measurements for each sample, the ARC thickness is optimized to increase light trapping in the solar cells. A response surface model (RSM) experiment is conducted in which 3 process parameters are varied on the PECVD tool for the deposition of the ARCs on several samples. A contactless photoconductance decay (PCD) tool is used to measure the dark saturation currents of these samples. A statistical analysis is performed using JMP in which optimum deposition parameters are found. A separate experiment shows an increase in the passivation quality of the a-SiNx:H ARCs deposited on the solar cells made on the line using these optimum parameters. A RSM experiment is used to optimize the printing process for a particular silver paste in a similar fashion, the results of which are confirmed by analyzing the series resistance of subsequent cells fabricated on the line. An in-depth explanation of a more advanced analysis using JMP and PCD measurements on the passivation quality of 3 aluminum back-surface fields (BSF) is given. From this experiment, a comparison of the means is conducted in order to choose the most effective BSF paste for cells fabricated on the line. An experiment is conducted in parallel which confirms the results via Voc measurements. It is shown that in a period of 11 months, the pilot line went from producing a top cell efficiency of 11.5% to 17.6%. Many of these methods used for the development of this pilot line are equally applicable to other cell structures, and can easily be applied to other solar cell pilot lines.
ContributorsPickett, Guy (Author) / Bowden, Stuart (Thesis advisor) / Honsberg, Christiana (Committee member) / Bertoni, Mariana (Committee member) / Arizona State University (Publisher)
Created2014
Description
A series of pyrite thin films were synthesized using a novel sequential evaporation
technique to study the effects of substrate temperature on deposition rate and micro-structure of
the deposited material. Pyrite was deposited in a monolayer-by-monolayer fashion using
sequential evaporation of Fe under high vacuum, followed by sulfidation at high S pressures
(typically > 1 mTorr to 1 Torr). Thin films were synthesized using two different growth processes; a
one-step process in which a constant growth temperature is maintained throughout growth, and a
three-step process in which an initial low temperature seed layer is deposited, followed by a high
temperature layer, and then finished with a low temperature capping layer. Analysis methods to
analyze the properties of the films included Glancing Angle X-Ray Diffraction (GAXRD),
Rutherford Back-scattering Spectroscopy (RBS), Transmission Electron Microscopy (TEM),
Secondary Ion Mass Spectroscopy (SIMS), 2-point IV measurements, and Hall effect
measurements. Our results show that crystallinity of the pyrite thin film improves and grain size
increases with increasing substrate temperature. The sticking coefficient of Fe was found to
increase with increasing growth temperature, indicating that the Fe incorporation into the growing
film is a thermally activated process.
technique to study the effects of substrate temperature on deposition rate and micro-structure of
the deposited material. Pyrite was deposited in a monolayer-by-monolayer fashion using
sequential evaporation of Fe under high vacuum, followed by sulfidation at high S pressures
(typically > 1 mTorr to 1 Torr). Thin films were synthesized using two different growth processes; a
one-step process in which a constant growth temperature is maintained throughout growth, and a
three-step process in which an initial low temperature seed layer is deposited, followed by a high
temperature layer, and then finished with a low temperature capping layer. Analysis methods to
analyze the properties of the films included Glancing Angle X-Ray Diffraction (GAXRD),
Rutherford Back-scattering Spectroscopy (RBS), Transmission Electron Microscopy (TEM),
Secondary Ion Mass Spectroscopy (SIMS), 2-point IV measurements, and Hall effect
measurements. Our results show that crystallinity of the pyrite thin film improves and grain size
increases with increasing substrate temperature. The sticking coefficient of Fe was found to
increase with increasing growth temperature, indicating that the Fe incorporation into the growing
film is a thermally activated process.
ContributorsWertheim, Alex (Author) / Newman, Nathan (Thesis advisor) / Singh, Rakesh (Committee member) / Bertoni, Mariana (Committee member) / Arizona State University (Publisher)
Created2014
Description
In this research work, the process optimization of silver iodide-silver meta phosphate ionic glass molding for solid state super ionic stamping was performed. Solid state super ionic stamping is a process of all solid ambient condition electrochemical nano patterning technique. In solid state super ionic stamping, anodic dissolution on a solid electrolyte –metal interface and subsequent charge-mass transport in the solid electrolyte is used for obtaining nanometer features on the metallic surface. The solid electrolyte referred to as the stamp is pre-patterned with features to be obtained on the metallic surface. This research developed the process for obtaining stamp with specific dimensions by making use of compression molding. The compression molding process was optimized by varying the five process parameters-temperature, pressure, holding time, pressing time and cooling time. The objective of the process optimization was to obtain best geometrical features for the stamp including flatness and surface roughness and by optimizing the compression molding process, stamp with minimum flatness and surface roughness was obtained. After the experimental optimization of the process was completed, statistical analysis was performed to understand the relative significance of the process parameters and the interaction of the process parameters on the flatness and surface roughness values of the molded stamp. Structural characterization was performed to obtain the variation of average domain size of ionic glass particles within the molded glass disk by varying the process parameters of holding time, pressing time and cooling time.
ContributorsPanikkar, Gautam (Author) / Hsu, Keng H (Thesis advisor) / Chan, Candace (Committee member) / Jiang, Hanqing (Committee member) / Arizona State University (Publisher)
Created2015
Description
High photoluminescence (PL) quantum yields reported from amorphous (a-Si) and crystalline (c-Si) nanoparticles have opened up lots of possibilities for use of silicon in optical applications such as light emitting diodes (LEDs), photonics and solar cells with added processing and cost benefits. However, the PL response and the mechanisms behind it are highly dependent on the matrix in which the nanoparticles are grown and on the growth method. While, the bottom-up approach for deposition of free standing nanoparticles seem to be perfectly suited for large area deposition for LED and solar cell applications, the dominant growth techniques (laser ablation and pyrolysis) have been shown to suffer from limitations in control over size distribution of nanoparticles and the requirement of equipment capable of withstanding high temperature. This led to the exploration of plasma based synthesis methods in this work.
Towards this effort, the development and automation of a novel tool “Anny” for synthesis of silicon nanoparticles using non-thermal plasma chamber is reported. These nanoparticles are then accelerated due to choked flow through a nozzle leading to substrate independent deposition. The nanoparticle properties are characterized against precursor gas flow rates and RF power to identify the optimum growth conditions for a stable, continuous deposition. It is found that amorphous nanoparticles offer a wide variety of chamber conditions for growth with a high throughput, stable plasma for continuous, long term operations.
The quantum confinement model for crystalline and spatial confinement models for amorphous nanoparticles in our size regime (6-8nm) are suggested for free standing nanoparticles and we report a high PL output from well passivated amorphous nanoparticles.
The PL output and its dependence on stability of surface hydrogen passivation is explored using Fourier Transform Infrared spectroscopy (FTIR). It is shown that the amorphous nanoparticles have a better and more stable passivation compared to crystalline nanoparticles grown under similar conditions. Hence, we show a-Si nanoparticles as exciting alternatives for optical applications to c-Si nanoparticles.
Towards this effort, the development and automation of a novel tool “Anny” for synthesis of silicon nanoparticles using non-thermal plasma chamber is reported. These nanoparticles are then accelerated due to choked flow through a nozzle leading to substrate independent deposition. The nanoparticle properties are characterized against precursor gas flow rates and RF power to identify the optimum growth conditions for a stable, continuous deposition. It is found that amorphous nanoparticles offer a wide variety of chamber conditions for growth with a high throughput, stable plasma for continuous, long term operations.
The quantum confinement model for crystalline and spatial confinement models for amorphous nanoparticles in our size regime (6-8nm) are suggested for free standing nanoparticles and we report a high PL output from well passivated amorphous nanoparticles.
The PL output and its dependence on stability of surface hydrogen passivation is explored using Fourier Transform Infrared spectroscopy (FTIR). It is shown that the amorphous nanoparticles have a better and more stable passivation compared to crystalline nanoparticles grown under similar conditions. Hence, we show a-Si nanoparticles as exciting alternatives for optical applications to c-Si nanoparticles.
ContributorsGarg, Prateek (Author) / Holman, Zachary C (Thesis advisor) / Zhang, Yong H (Committee member) / Bertoni, Mariana (Committee member) / Arizona State University (Publisher)
Created2015
Description
A basic theory and terminology that comprehensively applies to all different types
of contacts in silicon solar cells has, thus far, been elusive. While the well established diode model has been applied to many of the complex contacts, the theory is not adequate to intuitively describe the characteristics of novel contacts. This thesis shows that the many desirable characteristics of contacts that are discussed in the literature—carrier selectivity, passivation, and low majority carrier conductance, key among them—originate from the resistance to electrons and holes in the contact. These principles are applied to describe a few popular contact technologies in order to pave the path to envisioning novel contacts. Metrics for contact performance is introduced to quantify each of the above characteristics using the two carrier resistances. The the validity of the proposed metrics is explored using extensive PC-1D simulations.
of contacts in silicon solar cells has, thus far, been elusive. While the well established diode model has been applied to many of the complex contacts, the theory is not adequate to intuitively describe the characteristics of novel contacts. This thesis shows that the many desirable characteristics of contacts that are discussed in the literature—carrier selectivity, passivation, and low majority carrier conductance, key among them—originate from the resistance to electrons and holes in the contact. These principles are applied to describe a few popular contact technologies in order to pave the path to envisioning novel contacts. Metrics for contact performance is introduced to quantify each of the above characteristics using the two carrier resistances. The the validity of the proposed metrics is explored using extensive PC-1D simulations.
ContributorsKoswatta, Priyaranga L (Author) / Holman, Zachary C (Thesis advisor) / King, Richard (Committee member) / Bertoni, Mariana (Committee member) / Arizona State University (Publisher)
Created2016
Description
Lithium ion batteries have emerged as the most popular energy storage system, but they pose safety issues under extreme temperatures or in the event of a thermal runaway. Lithium ion batteries with inorganic separators offer the advantage of safer operation. An inorganic separator for lithium ion battery was prepared by an improved method of blade coating α-Al2O3 slurry directly on the electrode followed by drying. The improved separator preparation involves a twice-coating process instead of coating the slurry all at once in order to obtain a thin (~40 µm) and uniform coat. It was also found that α-Al2O3 powder with particle size greater than the pore size in the electrode is preferable for obtaining a separator with 40 µm thickness and consistent cell performance. Unlike state-of-the-art polyolefin separators such as polypropylene (PP) which are selectively wettable with only certain electrolytes, the excellent electrolyte solvent wettability of α-Al2O3 allows the coated alumina separator to function with different electrolytes. The coated α-Al2O3 separator has a much higher resistance to temperature effects than its polyolefin counterparts, retaining its dimensional integrity at temperatures as high as 200ºC. This eliminates the possibility of a short circuit during thermal runaway. Lithium ion batteries assembled as half-cells and full cells with coated α-Al2O3 separator exhibit electrochemical performance comparable with that of polyolefin separators at room temperature. However, the cells with coated alumina separator shows better cycling performance under extreme temperatures in the temperature range of -30°C to 60°C. Therefore, the coated α-Al2O3 separator is very promising for application in safe lithium-ion batteries.
ContributorsSharma, Gaurav (Author) / Lin, Jerry Y.S. (Thesis advisor) / Chan, Candace (Committee member) / Kannan, Arunachala (Committee member) / Arizona State University (Publisher)
Created2016
Description
Layers of intrinsic hydrogenated amorphous silicon and amorphous silicon carbide
were prepared on a polished, intrinsic crystalline silicon substrate via plasma-enhanced chemical vapor deposition to simulate heterojunction device relevant stacks of various materials. The minority carrier lifetime, optical band gap and FTIR spectra were observed at incremental stages of thermal annealing. By observing the changes in the lifetimes the sample structure responsible for the most thermally robust surface passivation could be determined. These results were correlated to the optical band gap and the position and relative area of peaks in the FTIR spectra related to to silicon-hydrogen bonds in the layers. It was found that due to an increased presence of hydrogen bonded to silicon at voids within the passivating layer, hydrogenated amorphous silicon carbide at the interface of the substrate coupled with a hydrogenated amorphous silicon top layer provides better passivation after high temperature annealing than other device structures.
were prepared on a polished, intrinsic crystalline silicon substrate via plasma-enhanced chemical vapor deposition to simulate heterojunction device relevant stacks of various materials. The minority carrier lifetime, optical band gap and FTIR spectra were observed at incremental stages of thermal annealing. By observing the changes in the lifetimes the sample structure responsible for the most thermally robust surface passivation could be determined. These results were correlated to the optical band gap and the position and relative area of peaks in the FTIR spectra related to to silicon-hydrogen bonds in the layers. It was found that due to an increased presence of hydrogen bonded to silicon at voids within the passivating layer, hydrogenated amorphous silicon carbide at the interface of the substrate coupled with a hydrogenated amorphous silicon top layer provides better passivation after high temperature annealing than other device structures.
ContributorsJackson, Alec James (Author) / Holman, Zachary (Thesis advisor) / Bertoni, Mariana (Committee member) / Kozicki, Michael (Committee member) / Arizona State University (Publisher)
Created2016
Description
Lithium ion batteries prepared with a ceramic separator, have proven to possess improved safety, reliability as well as performance characteristics when compared to those with polymer separators which are prone to thermal runaway. Purely inorganic separators are highly brittle and expensive. The electrode-supported ceramic separator permits thinner separators which are a lot more flexible in comparison. In this work, it was observed that not any α-alumina could be used by the blade coating process to get a good quality separator on Li4Ti5O12 (LTO) electrode. In this work specifically, the effect of particle size of α-alumina, on processability of slurry was investigated. The effect of the particle size variations on quality of separator formation was also studied. Most importantly, the effect of alumina particle size and its distribution on the performance of LTO/Li half cells is examined in detail. Large-sized particles were found to severely limit the ability to fabricate such separators. The α-alumina slurry was coated onto electrode substrate, leading to possible interaction between α-alumina and LTO substrate. The interaction between submicron sized particles of α-alumina with the substrate electrode pores, was found to affect the performance and the stability of the separator. Utilizing a bimodal distribution of submicron sized particles with micron sized particles of α-alumina to prepare the separator, improved cell performance was observed. Yet only a specific ratio of bimodal distribution achieved good results both in terms of separator formation and resulting cell performance. The interaction of α-alumina and binder in the separator, and its effect on the performance of substrate electrode was investigated, to understand the need for bimodal distribution of powder forming the separator.
ContributorsKanhere, Narayan Vishnu (Author) / Lin, Jerry Y. S. (Thesis advisor) / Kannan, Arunachala (Committee member) / Chan, Candace (Committee member) / Arizona State University (Publisher)
Created2017