Matching Items (25)
Filtering by

Clear all filters

171557-Thumbnail Image.png
Description
This dissertation consists of three chapters that investigate the rapid adoption and complex implementation of city commitments to transition to 100% renewable energy (100RE). The first paper uses a two-stage, mixed methods approach to examine 100RE commitments across the US, combining a multivariate regression of demographic, institutional, and policy factors

This dissertation consists of three chapters that investigate the rapid adoption and complex implementation of city commitments to transition to 100% renewable energy (100RE). The first paper uses a two-stage, mixed methods approach to examine 100RE commitments across the US, combining a multivariate regression of demographic, institutional, and policy factors in adoption and six interview-based state case studies to discuss implementation. Adoption of this non-binding commitment progressed rapidly for city councils around the US. Results show that many cities passed 100RE commitments with no implementation plan and minimal understanding of implementation challenges. This analysis highlights that many cities will need new institutions and administrative capacities for successful implementation of these ambitious new policies. While many cities abandoned the commitment soon after adoption, collaboration allowed cities in a few states to break through and pursue implementation, examined further in the next two studies. The second paper is a qualitative case study examining policymaking for the Utah Community Renewable Energy Act. Process tracing methods are used to identify causal factors in enacting this legislation at the state level and complementary resolutions at the local level. This Act was passed through the leadership and financial backing of major cities and committed the investor-owned utility to fulfill any city 100RE resolutions passed through 2019. Finally, the third paper is a mixed-methods, descriptive case study of the benefits of Community Choice Aggregation (CCA) in California, which many cities are using to fulfill their 100RE commitments. Cities have adopted CCAs to increase their local voice in the energy process, while fulfilling climate and energy goals. Overall, this research shows that change in the investor-owned utility electricity system is in fact possible from the city scale, though many cities will need institutional innovation to implement these policies and achieve the change they desire. While cities with greater resources are better positioned to make an impact, smaller cities can collaborate to similarly influence the energy system. Communities are interested in lowering energy costs for customers where possible, but the central motivations in these cases were the pursuit of sustainability and increasing local voice in energy decision-making.
ContributorsKunkel, Leah Christine (Author) / Breetz, Hanna L (Thesis advisor) / Parker, Nathan (Committee member) / Salon, Deborah (Committee member) / Arizona State University (Publisher)
Created2022
190931-Thumbnail Image.png
Description
In the last few decades, extensive research efforts have been focused on scaling down silicon-based complementary metal-oxide semiconductor (CMOS) technology to enable the continuation of Moore’s law. State-of-art CMOS includes fully depleted silicon-on-insulator (FDSOI) field-effect-transistors (FETs) with ultra-thin silicon channels (6 nm), as well as other three-dimensional (3D) device architectures

In the last few decades, extensive research efforts have been focused on scaling down silicon-based complementary metal-oxide semiconductor (CMOS) technology to enable the continuation of Moore’s law. State-of-art CMOS includes fully depleted silicon-on-insulator (FDSOI) field-effect-transistors (FETs) with ultra-thin silicon channels (6 nm), as well as other three-dimensional (3D) device architectures like Fin-FETs, nanosheet FETs, etc. Significant research efforts have characterized these technologies towards various applications, and at different conditions including a wide range of temperatures from room temperature (300 K) down to cryogenic temperatures. Theoretical efforts have studied ultrascaled devices using Landauer theory to further understand their transport properties and predict their performance in the quasi-ballistic regime.Further scaling of CMOS devices requires the introduction of new semiconducting channel materials, as now established by the research community. Here, two-dimensional (2D) semiconductors have emerged as a promising candidate to replace silicon for next-generation ultrascaled CMOS devices. These emerging 2D semiconductors also have applications beyond CMOS, for example in novel memory, neuromorphic, and spintronic devices. Graphene is a promising candidate for spintronic devices due to its outstanding spin transport properties as evidenced by numerous studies in non-local lateral spin valve (LSV) geometries. The essential components of graphene-based LSV, such as graphene FETs, metal-graphene contacts, and tunneling barriers, were individually investigated as part of this doctoral dissertation. In this work, several contributions were made to these CMOS and beyond CMOS technologies. This includes comprehensive characterization and modeling of FDSOI nanoscale FETs from room temperature down to cryogenic temperatures. Using Landauer theory for nanoscale transistors, FDSOI devices were analyzed and modeled under quasi-ballistic operation. This was extended towards a virtual-source modeling approach that accounts for temperature-dependent quasi-ballistic transport and back-gate biasing effects. Additionally, graphene devices with ultrathin high-k gate dielectrics were investigated towards FETs, non-volatile memory, and spintronic devices. New contributions were made relating to charge trapping effects and their impact on graphene device electrostatics (Dirac voltage shifts) and transport properties (impact on mobility and conductivity). This work also studied contact resistance and tunneling effects using transfer length method (TLM) graphene FET structures and magnetic tunneling junction (MTJ) towards graphene-based LSV.
ContributorsZhou, Guantong (Author) / Sanchez Esqueda, Ivan (Thesis advisor) / Vasileska, Dragica (Committee member) / Tongay, Sefaattin (Committee member) / Thornton, Trevor (Committee member) / Arizona State University (Publisher)
Created2023
190897-Thumbnail Image.png
Description
The research of alternative materials and new device architectures to exceed the limits of conventional silicon-based devices has been sparked by the persistent pursuit of semiconductor technology scaling. The development of tungsten diselenide (WSe2) and molybdenum disulfide (MoS2), well-known member of the transition metal dichalcogenide (TMD) family, has made great

The research of alternative materials and new device architectures to exceed the limits of conventional silicon-based devices has been sparked by the persistent pursuit of semiconductor technology scaling. The development of tungsten diselenide (WSe2) and molybdenum disulfide (MoS2), well-known member of the transition metal dichalcogenide (TMD) family, has made great strides towards ultrascaled two-dimensional (2D) field-effect-transistors (FETs). The scaling issues facing silicon-based complementary metal-oxide-semiconductor (CMOS) technologies can be solved by 2D FETs, which show extraordinary potential.This dissertation provides a comprehensive experimental analysis relating to improvements in p-type metal-oxide-semiconductor (PMOS) FETs with few-layer WSe2 and high-κ metal gate (HKMG) stacks. Compared to this works improved methods, standard metallization (more damaging to underlying channel) results in significant Fermi-level pinning, although Schottky barrier heights remain small (< 100 meV) when using high work function metals. Temperature-dependent analysis reveals a dominant contribution to contact resistance from the damaged channel access region. Thus, through less damaging metallization methods combined with strongly scaled HKMG stacks significant improvements were achieved in contact resistance and PMOS FET overall performance. A clean contact/channel interface was achieved through high-vacuum evaporation and temperature-controlled stepped deposition. Theoretical analysis using a Landauer transport adapted to WSe2 Schottky barrier FETs (SB-FETs) elucidates the prospects of nanoscale 2D PMOS FETs indicating high-performance towards the ultimate CMOS scaling limit. Next, this dissertation discusses how device electrical characteristics are affected by scaling of equivalent oxide thickness (EOT) and by adopting double-gate FET architectures, as well as how this might support CMOS scaling. An improved gate control over the channel is made possible by scaling EOT, improving on-off current ratios, carrier mobility, and subthreshold swing. This study also elucidates the impact of EOT scaling on FET gate hysteresis attributed to charge-trapping effects in high-κ-dielectrics prepared by atomic layer deposition (ALD). These developments in 2D FETs offer a compelling alternative to conventional silicon-based devices and a path for continued transistor scaling. This research contributes to ongoing efforts in 2D materials for future semiconductor technologies. Finally, this work introduces devices based on emerging Janus TMDs and bismuth oxyselenide (Bi2O2Se) layered semiconductors.
ContributorsPatoary, Md Naim Hossain (Author) / Sanchez Esqueda, Ivan (Thesis advisor) / Tongay, Sefaattin (Committee member) / Vasileska, Dragica (Committee member) / Goodnick, Stephen (Committee member) / Arizona State University (Publisher)
Created2023
189339-Thumbnail Image.png
Description
With rapid advances in technology development and public adoption, it is crucial to understand how these services will shape the future of travel depending on the extent to which people will use these services; impact the transportation and infrastructure systems such as changes in the use of transit and active

With rapid advances in technology development and public adoption, it is crucial to understand how these services will shape the future of travel depending on the extent to which people will use these services; impact the transportation and infrastructure systems such as changes in the use of transit and active modes of travel; and influence how technology developers create and update these transportation technologies to better serve people’s mobility needs. This dissertation explores how two major emerging services, namely ridehailing services and autonomous vehicles (AVs), will be used in the future when they are widely available and vastly used, and how they may impact the transportation infrastructure and societal travel patterns. The four proposed chapters use comprehensive quantitative and qualitative methods to explore the status of these technologies from theory, through robust modeling frameworks, to practice, by investigating the recent AV pilot deployments in real-world settings. In the second chapter, it was found that increased frequency of ridehailing use is significantly associated with a decrease in bus usage, suggesting that ridehailing functions more as a substitute for buses than as a complement and implying that transit agencies should explore ways to incorporate ridehailing services in their plans to enhance transit usage. Next, the third chapter showed that interest in using AVs for running errands had a positive and significant effect on AV ownership intent, even after accounting for a host of variables. The fourth chapter depicted how ridehailing experiences have a considerable effect on the willingness to ride AV-based services in both private and shared modes, suggesting that experience is crucial for future adoption of these services. Then, two recent real-world AV experiences are explored in the fifth chapter. Lessons learned from these experiments reinforced the importance of first-hand experiences in promoting AV awareness and trustworthiness, potentially leading to greater degrees of adoption. Finally, the results and discussions presented in this dissertation strengthen the body of literature on key emerging transportation technologies and inform policymakers and stakeholders to properly prepare cities and the public to welcome these technologies into our transportation system in an efficient, equitable, and complementary way.
ContributorsMagassy, Tassio Bezerra (Author) / Pendyala, Ram M (Thesis advisor) / Khoeini, Sara (Committee member) / Polzin, Steven E (Committee member) / Salon, Deborah (Committee member) / Arizona State University (Publisher)
Created2023
171653-Thumbnail Image.png
Description
Complex perovskite materials, including Ba(Zn1/3Ta2/3)O3 (BZT), are commonly used to make resonators and filters in communication systems because of their low dielectric loss and high-quality factors (Q). Transition metal additives are introduced (i.e., Ni2+, Co2+, Mn2+) to act as sintering agents and tune their temperature coefficient to zero or near-zero.

Complex perovskite materials, including Ba(Zn1/3Ta2/3)O3 (BZT), are commonly used to make resonators and filters in communication systems because of their low dielectric loss and high-quality factors (Q). Transition metal additives are introduced (i.e., Ni2+, Co2+, Mn2+) to act as sintering agents and tune their temperature coefficient to zero or near-zero. However, losses in these commercial dielectric materials at cryogenic temperatures increase markedly due to spin-excitation resulting from the presence of paramagnetic defects. Applying a large magnetic field (e.g., 5 Tesla) quenches these losses and has allowed the study of other loss mechanisms present at low temperatures. Work was performed on Fe3+ doped LaAlO3. At high magnetic fields, the residual losses versus temperature plots exhibit Debye peaks at ~40 K, ~75 K, and ~215 K temperature and can be tentatively associated with defect reactions O_i^x+V_O^x→O_i^'+V_O^•, Fe_Al^x+V_Al^"→Fe_Al^'+V_Al^' and Al_i^x+Al_i^(••)→〖2Al〗_i^•, respectively. Peaks in the loss tangent versus temperature graph of Zn-deficient BZT indicate a higher concentration of defects and appear to result from conduction losses.Guided by the knowledge gained from this study, a systematic study to develop high-performance microwave materials for ultra-high performance at cryogenic temperatures was performed. To this end, the production and characterization of perovskite materials that were either undoped or contained non-paramagnetic additives were carried out. Synthesis of BZT ceramic with over 98% theoretical density was obtained using B2O3 or BaZrO3 additives. At 4 K, the highest Q x f product of 283,000 GHz was recorded for 5% BaZrO3 doped BZT. A portable, inexpensive open-air spectrometer was designed, built, and tested to make the electron paramagnetic resonance (EPR) technique more accessible for high-school and university lab instruction. In this design, the sample is placed near a dielectric resonator and does not need to be enclosed in a cavity, as is used in commercial EPR spectrometers. Permanent magnets used produce fields up to 1500 G, enabling EPR measurements up to 3 GHz.
ContributorsGajare, Siddhesh Girish (Author) / Newman, Nathan (Thesis advisor) / Alford, Terry (Committee member) / Tongay, Sefaattin (Committee member) / Chamberlin, Ralph (Committee member) / Arizona State University (Publisher)
Created2022
168353-Thumbnail Image.png
Description
The past two decades have been marked by disruptions in the way transportation is provided to society. Examples are carsharing, ridehailing services, and electric scooters. Understanding how sensitive travel behavior is during transportation disruptions is a key part of planning for the future of transportation. While the effects of people's

The past two decades have been marked by disruptions in the way transportation is provided to society. Examples are carsharing, ridehailing services, and electric scooters. Understanding how sensitive travel behavior is during transportation disruptions is a key part of planning for the future of transportation. While the effects of people's attitudes and perceptions on travel behavior and choices have been studied in the past, their role in response to disruptions remains under explored. This dissertation explores the effect of attitudes on travel behavior and perceptions for two distinct disruptions: the advent of autonomous vehicles (AVs) and the COVID-19 pandemic. Before diving into such elaborate relationships, it is important to understand how attitudinal data is collected and measured. Thus, a study of the effects of different survey methods on the collection of attitudes towards transportation disruptions is performed. This dissertation finds that having a favorable perception of AVs is the most important factor in defining one’s willingness to use them. More importantly, those who only heard about AVs without knowing much about them were actually less likely to have a favorable perception when compared to those who never heard of AVs prior to the survey, reinforcing the need for thoughtful education and awareness initiatives. Additionally, gender also played an important role in expectations about the AV Future: not only are women less interested in using AVs as a pooled ride service, but also that the effect of attitudes on defining that choice was different for men and women. Regarding the COVID-19 pandemic, two different attitudes towards COVID were identified: concern about the effects of the COVID-19 response, and concern about the health effects of the coronavirus. Both shaped the ways people traveled, and how often they did so. These findings reinforce the need for the broad collection of attitudinal data and the incorporation of such parameters on future travel forecasting.
ContributorsCapasso da Silva, Denise (Author) / Pendyala, Ram M (Thesis advisor) / Khoeini, Sara (Thesis advisor) / Salon, Deborah (Committee member) / Thompson, Marilyn (Committee member) / Arizona State University (Publisher)
Created2021
168357-Thumbnail Image.png
Description
Thin film solar cells are based on polycrystalline materials that contain a high concentration of intrinsic and extrinsic defects. Improving the device efficiency in such systems relies on understanding the nature of defects - whether they are positive, negative, or neutral in their influence - and their sources in order

Thin film solar cells are based on polycrystalline materials that contain a high concentration of intrinsic and extrinsic defects. Improving the device efficiency in such systems relies on understanding the nature of defects - whether they are positive, negative, or neutral in their influence - and their sources in order to engineer optimized absorbers. Oftentimes, these are studied individually, as characterization techniques are limited in their ability to directly relate material properties in individual layers to their impact on the actual device performance. Expanding the tools available for increased understanding of materials and devices has been critical for reducing the translation time of laboratory-scale research to changes in commercial module manufacturing lines. The use of synchrotron X-ray fluorescence (XRF) paired with X-ray beam induced current and voltage (XBIC, XBIV respectively) has proven to be an effective technique for understanding the impact of material composition and inhomogeneity on solar cell device functioning. The combination of large penetration depth, small spot size, and high flux allows for the measurement of entire solar cell stacks with high spatial resolution and chemical sensitivity. In this work, I combine correlative XRF/XBIC/XBIV with other characterization approaches across varying length scales, such as micro-Raman spectroscopy and photoluminescence, to understand how composition influences device performance in thin films. The work described here is broken into three sections. Firstly, understanding the influence of KF post-deposition treatment (PDT) and the use of Ag-alloying to reduce defect density in the Ga-free material system, CuInSe2 (CIS). Next, applying a similar characterization workflow to industrially relevant Ga-containing Cu(In1-xGax)Se2 (CIGS) modules with Ag and KF-PDT. The influence of light soaking and dark heat exposure on the modules are also studied in detail. Results show that Ag used with KF-PDT in CIS causes undesirable cation ordering at the CdS interface and affects the device through increased potential fluctuations. The results also demonstrate the importance of tuning the concentration of KF-PDT used when intended to be used in Ag-alloyed devices. Commercially-processed modules with optimized Ag and KF concentrations are shown to have the device performance instead be dominated by variations in the CIGS composition itself. In particular, changes in Cu and Se concentrations are found to be most influential on the device response to accelerated stressors such as dark heat exposure and light soaking. In the final chapter, simulations of nano-scale XBIC and XBIV are done to contribute to the understanding of these measurements.
ContributorsNietzold, Tara (Author) / Bertoni, Mariana I. (Thesis advisor) / Holt, Martin (Committee member) / Shafarman, William N. (Committee member) / Tongay, Sefaattin (Committee member) / Arizona State University (Publisher)
Created2021
191029-Thumbnail Image.png
Description
The application of silicon thin films in solar cells has evolved from their use in amorphous silicon solar cells to their use as passivating and carrier-selective contacts in crystalline silicon solar cells. Their use as carrier-selective contacts has enabled crystalline silicon solar cell efficiencies above 26%, just 3% shy of

The application of silicon thin films in solar cells has evolved from their use in amorphous silicon solar cells to their use as passivating and carrier-selective contacts in crystalline silicon solar cells. Their use as carrier-selective contacts has enabled crystalline silicon solar cell efficiencies above 26%, just 3% shy of the theoretical efficiency limit. The two cell architectures that have exceeded 26% are the silicon heterojunction and tunnel oxide passivating contact cell. These two cell architectures use two different forms of silicon thin films. In the case of the silicon heterojunction, the crystalline wafer is sandwiched between layers of intrinsic amorphous silicon, which acts as the passivation layer, and doped amorphous silicon, which acts as the carrier-selective layer. On the other hand, the tunnel oxide passivating contact cell uses a thin silicon oxide passivation layer and a doped polycrystalline silicon layer as the carrier-selective layer. Both cell structures have their distinct advantages and disadvantages when it comes to production. The processing of the silicon heterojunction relies on a low thermal budget and leads to high open-circuit voltages, but the cost of high-vacuum processing equipment presents a major hurdle for industrial scale production while the tunnel oxide passivating contact can be easily integrated into current industrial lines, yet it requires a higher thermal budgets and does not produce as high of an open-circuit voltage as the silicon heterojunction. This work focuses on using both forms of silicon thin films applied as passivating and carrier-selective contacts to crystalline silicon thin films.First, a thorough analysis of the series resistivity in silicon heterojunction solar cells is conducted. In particular, variations in the thickness and doping of the individual ii contact layers are performed to reveal their effect on the contact resistivity and in turn the total series resistivity of the cell. Second, a tunnel oxide passivated contact is created using a novel deposition method for the silicon oxide layer. A 21% efficient proof-of-concept device is presented demonstrating the potential of this deposition method. Finally, recommendations to further improve the efficiency of these cells is presented.
ContributorsWeigand, William (Author) / Holman, Zachary (Thesis advisor) / Yu, Zhengshan (Committee member) / Bertoni, Mariana (Committee member) / Tongay, Sefaattin (Committee member) / Arizona State University (Publisher)
Created2023
187414-Thumbnail Image.png
Description
Rare-earth tritellurides (RTe3) are two-dimensional materials with unique quantum properties, ideal for investigating quantum phenomena and applications in supercapacitors, spintronics, and twistronics. This dissertation examines the electronic, magnetic, and phononic properties of the RTe3 family, exploring how these can be controlled using chemical pressure, cationic alloying, and external pressure.The impact

Rare-earth tritellurides (RTe3) are two-dimensional materials with unique quantum properties, ideal for investigating quantum phenomena and applications in supercapacitors, spintronics, and twistronics. This dissertation examines the electronic, magnetic, and phononic properties of the RTe3 family, exploring how these can be controlled using chemical pressure, cationic alloying, and external pressure.The impact of chemical pressure on RTe3 phononic properties was investigated through noninvasive micro-Raman spectroscopy, demonstrating the potential of optical measurements for determining charge density wave (CDW) transition temperatures. Cationic alloying studies showed seamless tuning of CDW transition temperatures by modifying lattice constants and revealed complex magnetism in alloyed RTe3 with multiple magnetic transitions. A comprehensive external pressure study examined the influence of spacing between RTe3 layers on phononic and CDW properties across the RTe3 family. Comparisons between different RTe3 materials showed LaTe3, with the largest thermodynamic equilibrium interlayer spacing (smallest chemical pressure), has the most stable CDW phases at high pressures. Conversely, CDW phases in late RTe3 systems with larger internal chemical pressures were more easily suppressed by applied pressure. The dissertation also investigated Schottky barrier realignment at RTe3/semiconductor interfaces induced by CDW transitions, revealing changes in Schottky barrier height and ideality factor around the CDW transition temperature. This indicates that chemical potential changes of RTe3 below the CDW transition temperature influence Schottky junction properties, enabling CDW state probing through interface property measurements. A detailed experimental and theoretical analysis of the oxidation process of RTe3 compounds was performed, which revealed faster degradation in late RTe3 systems. Electronic property changes, like CDW transition temperature and chemical potential, are observed as degradation progresses. Quantum mechanical simulations suggested that degradation primarily results from strong oxidizing reactions with O2 molecules, while humidity (H2O) plays a negligible role unless Te vacancies exist. Lastly, the dissertation establishes a large-area thin film deposition at relatively low temperatures using a soft sputtering technique. While focused on MoTe2 deposition, this technique may also apply to RTe3 thin film deposition. Overall, this dissertation expands the understanding of the fundamental properties of RTe3 materials and lays the groundwork for potential device applications.
ContributorsYumigeta, Kentaro (Author) / Tongay, Sefaattin (Thesis advisor) / Ponce, Fernando (Committee member) / Drucker, Jeffery (Committee member) / Erten, Onur (Committee member) / Arizona State University (Publisher)
Created2023
193573-Thumbnail Image.png
Description
Janus Transition Metal Dichalcogenides (TMDs) are emerging 2D quantum materials with an asymmetric chalcogen configuration that induces an out-of-plane dipole moment. Their synthesis has been a limiting factor in exploring these systems' many-body physics and interactions. This dissertation examines the challenges associated with synthesis and charts the excitonic landscape of

Janus Transition Metal Dichalcogenides (TMDs) are emerging 2D quantum materials with an asymmetric chalcogen configuration that induces an out-of-plane dipole moment. Their synthesis has been a limiting factor in exploring these systems' many-body physics and interactions. This dissertation examines the challenges associated with synthesis and charts the excitonic landscape of Janus crystals by proposing the development of the Selective Epitaxy and Atomic Replacement (SEAR) technique. SEAR utilizes ionized radical precursors to modify TMD monolayers into their Janus counterparts selectively. The synthesis is coupled with optical spectroscopy and monitored in real-time, enabling precise control of reaction kinetics and the structural evolution of Janus TMDs. The results demonstrate the synthesis of Janus TMDs at ambient temperatures, reducing defects and preserving the structural integrity with the hitherto best-reported exciton linewidth emission value, indicating ultra-high optical quality. Cryogenic optical spectroscopy (4K) coupled with a magnetic field on Janus monolayers has allowed the isolation of excitonic transitions and the identification of charged exciton complexes. Further study into macroscopic and microscopic defects reveals that structural asymmetry results in the spontaneous formation of 2D Janus Nanoscrolls from an in-plane strain. The chalcogen arrangement in these structures dictates two types of scrolling dynamics that form Archimedean or inverted C-scrolls. High-resolution scanning transmission electron microscopy of these superlattices shows a preferential orientation of scrolling and formation of Moiré patterns. These materials' thermodynamically favorable defect states are identified and shown to be optically active. The encapsulation of Janus TMDs with hexagonal Boron Nitride (h-BN) has allowed isolation defect transitions. DFT coupled with power-dependent PL spectroscopy at 4K shows the broad defect band to be a convolution of individual defect states with extremely narrow linewidth (2 meV) indicative of a two-state quantum system. The research presents a comprehensive synthesis approach with insights into the structural and morphological stability of 2D Janus layers, establishing a complete structure-property correlation of optical transitions and defect states, broadening the scope for practical applications in quantum information technologies.
ContributorsSayyad, Mohammed Yasir (Author) / Tongay, Sefaattin (Thesis advisor) / Esqueda, Ivan S (Committee member) / Zhuang, Houlong (Committee member) / Arizona State University (Publisher)
Created2024