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- Genre: Doctoral Dissertation
- Creators: Yu, Hongbin
Description
We present fast and robust numerical algorithms for 3-D scattering from perfectly electrical conducting (PEC) and dielectric random rough surfaces in microwave remote sensing. The Coifman wavelets or Coiflets are employed to implement Galerkin’s procedure in the method of moments (MoM). Due to the high-precision one-point quadrature, the Coiflets yield fast evaluations of the most off-diagonal entries, reducing the matrix fill effort from O(N^2) to O(N). The orthogonality and Riesz basis of the Coiflets generate well conditioned impedance matrix, with rapid convergence for the conjugate gradient solver. The resulting impedance matrix is further sparsified by the matrix-formed standard fast wavelet transform (SFWT). By properly selecting multiresolution levels of the total transformation matrix, the solution precision can be enhanced while matrix sparsity and memory consumption have not been noticeably sacrificed. The unified fast scattering algorithm for dielectric random rough surfaces can asymptotically reduce to the PEC case when the loss tangent grows extremely large. Numerical results demonstrate that the reduced PEC model does not suffer from ill-posed problems. Compared with previous publications and laboratory measurements, good agreement is observed.
ContributorsZhang, Lisha (Author) / Pan, George (Thesis advisor) / Diaz, Rodolfo (Committee member) / Aberle, James T., 1961- (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2016
Towards high-efficiency thin-film solar cells: from theoretical analysis to experimental exploration
Description
GaAs single-junction solar cells have been studied extensively in recent years, and have reached over 28 % efficiency. Further improvement requires an optically thick but physically thin absorber to provide both large short-circuit current and high open-circuit voltage. By detailed simulation, it is concluded that ultra-thin GaAs cells with hundreds of nanometers thickness and reflective back scattering can potentially offer efficiencies greater than 30 %. The 300 nm GaAs solar cell with AlInP/Au reflective back scattering is carefully designed and demonstrates an efficiency of 19.1 %. The device performance is analyzed using the semi-analytical model with Phong distribution implemented to account for non-Lambertian scattering. A Phong exponent m of ~12, a non-radiative lifetime of 130 ns, and a specific series resistivity of 1.2 Ω·cm2 are determined.
Thin-film CdTe solar cells have also attracted lots of attention due to the continuous improvements in their device performance. To address the issue of the lower efficiency record compared to detailed-balance limit, the single-crystalline Cd(Zn)Te/MgCdTe double heterostructures (DH) grown on InSb (100) substrates by molecular beam epitaxy (MBE) are carefully studied. The Cd0.9946Zn0.0054Te alloy lattice-matched to InSb has been demonstrated with a carrier lifetime of 0.34 µs observed in a 3 µm thick Cd0.9946Zn0.0054Te/MgCdTe DH sample. The substantial improvement of lifetime is due to the reduction in misfit dislocation density. The recombination lifetime and interface recombination velocity (IRV) of CdTe/MgxCd1-xTe DHs are investigated. The IRV is found to be dependent on both the MgCdTe barrier height and width due to the thermionic emission and tunneling processes. A record-long carrier lifetime of 2.7 µs and a record-low IRV of close to zero have been confirmed experimentally.
The MgCdTe/Si tandem solar cell is proposed to address the issue of high manufacturing costs and poor performance of thin-film solar cells. The MBE grown MgxCd1-xTe/MgyCd1-yTe DHs have demonstrated the required bandgap energy of 1.7 eV, a carrier lifetime of 11 ns, and an effective IRV of (1.869 ± 0.007) × 103 cm/s. The large IRV is attributed to thermionic-emission induced interface recombination. These understandings can be applied to fabricating the high-efficiency low-cost MgCdTe/Si tandem solar cell.
Thin-film CdTe solar cells have also attracted lots of attention due to the continuous improvements in their device performance. To address the issue of the lower efficiency record compared to detailed-balance limit, the single-crystalline Cd(Zn)Te/MgCdTe double heterostructures (DH) grown on InSb (100) substrates by molecular beam epitaxy (MBE) are carefully studied. The Cd0.9946Zn0.0054Te alloy lattice-matched to InSb has been demonstrated with a carrier lifetime of 0.34 µs observed in a 3 µm thick Cd0.9946Zn0.0054Te/MgCdTe DH sample. The substantial improvement of lifetime is due to the reduction in misfit dislocation density. The recombination lifetime and interface recombination velocity (IRV) of CdTe/MgxCd1-xTe DHs are investigated. The IRV is found to be dependent on both the MgCdTe barrier height and width due to the thermionic emission and tunneling processes. A record-long carrier lifetime of 2.7 µs and a record-low IRV of close to zero have been confirmed experimentally.
The MgCdTe/Si tandem solar cell is proposed to address the issue of high manufacturing costs and poor performance of thin-film solar cells. The MBE grown MgxCd1-xTe/MgyCd1-yTe DHs have demonstrated the required bandgap energy of 1.7 eV, a carrier lifetime of 11 ns, and an effective IRV of (1.869 ± 0.007) × 103 cm/s. The large IRV is attributed to thermionic-emission induced interface recombination. These understandings can be applied to fabricating the high-efficiency low-cost MgCdTe/Si tandem solar cell.
ContributorsLiu, Shi (Author) / Zhang, Yong-Hang (Thesis advisor) / Johnson, Shane R (Committee member) / Vasileska, Dragica (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2015
Description
The microelectronics technology has seen a tremendous growth over the past sixty years. The advancements in microelectronics, which shows the capability of yielding highly reliable and reproducible structures, have made the mass production of integrated electronic components feasible. Miniaturized, low-cost, and accurate sensors became available due to the rise of the microelectronics industry. A variety of sensors are being used extensively in many portable applications. These sensors are promising not only in research area but also in daily routine applications.
However, many sensing systems are relatively bulky, complicated, and expensive and main advantages of new sensors do not play an important role in practical applications. Many challenges arise due to intricacies for sensor packaging, especially operation in a solution environment. Additional problems emerge when interfacing sensors with external off-chip components. A large amount of research in the field of sensors has been focused on how to improve the system integration.
This work presents new methods for the design, fabrication, and integration of sensor systems. This thesis addresses these challenges, for example, interfacing microelectronic system to a liquid environment and developing a new technique for impedimetric measurement. This work also shows a new design for on-chip optical sensor without any other extra components or post-processing.
However, many sensing systems are relatively bulky, complicated, and expensive and main advantages of new sensors do not play an important role in practical applications. Many challenges arise due to intricacies for sensor packaging, especially operation in a solution environment. Additional problems emerge when interfacing sensors with external off-chip components. A large amount of research in the field of sensors has been focused on how to improve the system integration.
This work presents new methods for the design, fabrication, and integration of sensor systems. This thesis addresses these challenges, for example, interfacing microelectronic system to a liquid environment and developing a new technique for impedimetric measurement. This work also shows a new design for on-chip optical sensor without any other extra components or post-processing.
ContributorsLuo, Tao (Author) / Blain Christen, Jennifer (Thesis advisor) / Song, Hongjiang (Committee member) / Goryll, Michael (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2015
Description
Electromagnetic band-gap (EBG) structures have noteworthy electromagnetic characteristics that include their phase variations with frequency. When combining perfect electric conductor (PEC) and EBG structures on the same ground plane, the scattering fields of the ground plane are altered because of the scattering properties of EBG structures. The scattering fields are cancelled along the principal planes because PEC and EBG structures are anti-phase at the resonant frequency. To make the scattered fields symmetrical under plane wave incidence, a square checkerboard surface is designed to form constructive and destructive interference scattering patterns to reduce the intensity of the scattered fields toward the observer; thus reducing the radar cross section (RCS). To increase the 10-dB RCS reduction (compared to a PEC surface) bandwidth, checkerboard surfaces of two different EBG structures on the same ground plane are designed. Thus, significant RCS reduction over a wider frequency bandwidth of about 63% is achieved.
Another design is a hexagonal checkerboard surface that achieves the same RCS reduction bandwidth because it combines the same EBG designs. The hexagonal checkerboard design further reduce the RCS than square checkerboard designs because the reflected energy is re-directed toward six directions and a null remains in the normal direction.
A dual frequency band checkerboard surface with 10-dB RCS reduction bandwidths of 61% and 24% is realized by utilizing two dual-band EBG structures, while the surfaces maintain scattering in four quadrants. The first RCS reduction bandwidth of the dual band is basically the same as in the square checkerboard design; however, the present surface exhibits a second frequency band of 10-dB RCS reduction.
Finally, cylindrically curved checkerboard surfaces are designed and examined for three different radii of curvature. Both narrow and wide band curved checkerboard surfaces are evaluated under normal incidence for both horizontal and vertical polarizations. Simulated bistatic RCS patterns of the cylindrical checkerboard surfaces are presented.
For all designs, bistatic and monostatic RCS of each checkerboard surface design are compared to that of the corresponding PEC surface. The monostatic simulations are also compared with measurements as a function of frequency and polarization. A very good agreement has been attained throughout.
Another design is a hexagonal checkerboard surface that achieves the same RCS reduction bandwidth because it combines the same EBG designs. The hexagonal checkerboard design further reduce the RCS than square checkerboard designs because the reflected energy is re-directed toward six directions and a null remains in the normal direction.
A dual frequency band checkerboard surface with 10-dB RCS reduction bandwidths of 61% and 24% is realized by utilizing two dual-band EBG structures, while the surfaces maintain scattering in four quadrants. The first RCS reduction bandwidth of the dual band is basically the same as in the square checkerboard design; however, the present surface exhibits a second frequency band of 10-dB RCS reduction.
Finally, cylindrically curved checkerboard surfaces are designed and examined for three different radii of curvature. Both narrow and wide band curved checkerboard surfaces are evaluated under normal incidence for both horizontal and vertical polarizations. Simulated bistatic RCS patterns of the cylindrical checkerboard surfaces are presented.
For all designs, bistatic and monostatic RCS of each checkerboard surface design are compared to that of the corresponding PEC surface. The monostatic simulations are also compared with measurements as a function of frequency and polarization. A very good agreement has been attained throughout.
ContributorsChen, Wengang (Author) / Balanis, Constantine A. (Thesis advisor) / Aberle, James T. (Committee member) / Yu, Hongbin (Committee member) / Palais, Joseph C. (Committee member) / Arizona State University (Publisher)
Created2016
Description
Environmentally responsive hydrogels are one interesting class of soft materials. Due to their remarkable responsiveness to stimuli such as temperature, pH, or light, they have attracted widespread attention in many fields. However, certain functionality of these materials alone is often limited in comparison to other materials such as silicon; thus, there is a need to integrate soft and hard materials for the advancement of environmental-ly responsive materials.
Conventional hydrogels lack good mechanical properties and have inherently slow response time, important characteristics which must be improved before the hydrogels can be integrated with silicon. In the present dissertation work, both these important attrib-utes of a temperature responsive hydrogel, poly(N-isopropylacrylamide) (PNIPAAm), were improved by adopting a low temperature polymerization process and adding a sili-cate compound, tetramethyl orthosilicate. Furthermore, the transition temperature was modulated by adjusting the media quality in which the hydrogels were equilibrated, e.g. by adding a co-solvent (methanol) or an anionic surfactant (sodium dodecyl sulfate). In-terestingly, the results revealed that, based on the hydrogels’ porosity, there were appre-ciable differences when the PNIPAAm hydrogels interacted with the media molecules.
Next, an adhesion mechanism was developed in order to transfer silicon thin film onto the hydrogel surface. This integration provided a means of mechanical buckling of the thin silicon film due to changes in environmental stimuli (e.g., temperature, pH). We also investigated how novel transfer printing techniques could be used to generate pat-terned deformation of silicon thin film when integrated on a planar hydrogel substrate. Furthermore, we explore multilayer hybrid hydrogel structures formed by the integration of different types of hydrogels that have tunable curvatures under the influence of differ-ent stimuli. Silicon thin film integration on such tunable curvature substrates reveal char-acteristic reversible buckling of the thin film in the presence of multiple stimuli.
Finally, different approaches of incorporating visible light response in PNIPAAm are discussed. Specifically, a chemical chromophore- spirobenzopyran was synthesized and integrated through chemical cross-linking into the PNIPAAm hydrogels. Further, methods of improving the light response and mechanical properties were also demonstrat-ed. Interestingly, such a system was shown to have potential application as light modulated topography altering system
Conventional hydrogels lack good mechanical properties and have inherently slow response time, important characteristics which must be improved before the hydrogels can be integrated with silicon. In the present dissertation work, both these important attrib-utes of a temperature responsive hydrogel, poly(N-isopropylacrylamide) (PNIPAAm), were improved by adopting a low temperature polymerization process and adding a sili-cate compound, tetramethyl orthosilicate. Furthermore, the transition temperature was modulated by adjusting the media quality in which the hydrogels were equilibrated, e.g. by adding a co-solvent (methanol) or an anionic surfactant (sodium dodecyl sulfate). In-terestingly, the results revealed that, based on the hydrogels’ porosity, there were appre-ciable differences when the PNIPAAm hydrogels interacted with the media molecules.
Next, an adhesion mechanism was developed in order to transfer silicon thin film onto the hydrogel surface. This integration provided a means of mechanical buckling of the thin silicon film due to changes in environmental stimuli (e.g., temperature, pH). We also investigated how novel transfer printing techniques could be used to generate pat-terned deformation of silicon thin film when integrated on a planar hydrogel substrate. Furthermore, we explore multilayer hybrid hydrogel structures formed by the integration of different types of hydrogels that have tunable curvatures under the influence of differ-ent stimuli. Silicon thin film integration on such tunable curvature substrates reveal char-acteristic reversible buckling of the thin film in the presence of multiple stimuli.
Finally, different approaches of incorporating visible light response in PNIPAAm are discussed. Specifically, a chemical chromophore- spirobenzopyran was synthesized and integrated through chemical cross-linking into the PNIPAAm hydrogels. Further, methods of improving the light response and mechanical properties were also demonstrat-ed. Interestingly, such a system was shown to have potential application as light modulated topography altering system
ContributorsChatterjee, Prithwish (Author) / Dai, Lenore L. (Thesis advisor) / Jiang, Hanqing (Thesis advisor) / Lind, Mary Laura (Committee member) / Yu, Hongyu (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2015
Description
Nanowires are one-dimensional (1D) structures with diameter on the nanometer scales with a high length-to-diameter aspect ratio. Nanowires of various materials including semiconductors, dielectrics and metals have been intensively researched in the past two decades for applications to electrical and optical devices. Typically, nanowires are synthesized using the vapor-liquid-solid (VLS) approach, which allows defect-free 1D growth despite the lattice mismatch between nanowires and substrates. Lattice mismatch issue is a serious problem in high-quality thin film growth of many semiconductors and non-semiconductors. Therefore, nanowires provide promising platforms for the applications requiring high crystal quality materials.
With the 1D geometry, nanowires are natural optical waveguides for light guiding and propagation. By introducing feedback mechanisms to nanowire waveguides, such as the cleaved end facets, the nanowires can work as ultra-small size lasers. Since the first demonstration of the room-temperature ultraviolet nanowire lasers in 2001, the nanowire lasers covering from ultraviolet to mid infrared wavelength ranges have been intensively studied. This dissertation focuses on the optical characterization and laser fabrication of two nanowire materials: erbium chloride silicate nanowires and composition-graded CdSSe semiconductor alloy nanowires.
Chapter 1 – 5 of this dissertation presents a comprehensive characterization of a newly developed erbium compound material, erbium chloride silicate (ECS) in a nanowire form. Extensive experiments demonstrated the high crystal quality and excellent optical properties of ECS nanowires. Optical gain higher than 30 dB/cm at 1.53 μm wavelength is demonstrated on single ECS nanowires, which is higher than the gain of any reported erbium materials. An ultra-high Q photonic crystal micro-cavity is designed on a single ECS nanowire towards the ultra-compact lasers at communication wavelengths. Such ECS nanowire lasers show the potential applications of on-chip photonics integration.
Chapter 6 – 7 presents the design and demonstration of dynamical color-controllable lasers on a single CdSSe alloy nanowire. Through the defect-free VLS growth, engineering of the alloy composition in a single nanowire is achieved. The alloy composition of CdSxSe1-x uniformly varies along the nanowire axis from x=1 to x=0, giving the opportunity of multi-color lasing in a monolithic structure. By looping the wide-bandgap end of the alloy nanowire through nanoscale manipulation, the simultaneous two-color lasing at green and red colors are demonstrated. The 107 nm wavelength separation of the two lasing colors is much larger than the gain bandwidth of typical semiconductors. Since the two-color lasing shares the output port, the color of the total lasing output can be controlled dynamically between the two fundamental colors by changing the relative output power of two lasing colors. Such multi-color lasing and continuous color tuning in a wide spectral range would eventually enable color-by-design lasers to be used for lighting, display and many other applications.
With the 1D geometry, nanowires are natural optical waveguides for light guiding and propagation. By introducing feedback mechanisms to nanowire waveguides, such as the cleaved end facets, the nanowires can work as ultra-small size lasers. Since the first demonstration of the room-temperature ultraviolet nanowire lasers in 2001, the nanowire lasers covering from ultraviolet to mid infrared wavelength ranges have been intensively studied. This dissertation focuses on the optical characterization and laser fabrication of two nanowire materials: erbium chloride silicate nanowires and composition-graded CdSSe semiconductor alloy nanowires.
Chapter 1 – 5 of this dissertation presents a comprehensive characterization of a newly developed erbium compound material, erbium chloride silicate (ECS) in a nanowire form. Extensive experiments demonstrated the high crystal quality and excellent optical properties of ECS nanowires. Optical gain higher than 30 dB/cm at 1.53 μm wavelength is demonstrated on single ECS nanowires, which is higher than the gain of any reported erbium materials. An ultra-high Q photonic crystal micro-cavity is designed on a single ECS nanowire towards the ultra-compact lasers at communication wavelengths. Such ECS nanowire lasers show the potential applications of on-chip photonics integration.
Chapter 6 – 7 presents the design and demonstration of dynamical color-controllable lasers on a single CdSSe alloy nanowire. Through the defect-free VLS growth, engineering of the alloy composition in a single nanowire is achieved. The alloy composition of CdSxSe1-x uniformly varies along the nanowire axis from x=1 to x=0, giving the opportunity of multi-color lasing in a monolithic structure. By looping the wide-bandgap end of the alloy nanowire through nanoscale manipulation, the simultaneous two-color lasing at green and red colors are demonstrated. The 107 nm wavelength separation of the two lasing colors is much larger than the gain bandwidth of typical semiconductors. Since the two-color lasing shares the output port, the color of the total lasing output can be controlled dynamically between the two fundamental colors by changing the relative output power of two lasing colors. Such multi-color lasing and continuous color tuning in a wide spectral range would eventually enable color-by-design lasers to be used for lighting, display and many other applications.
ContributorsLiu, Zhicheng (Author) / Ning, Cun-Zheng (Thesis advisor) / Palais, Joseph (Committee member) / Yu, Hongbin (Committee member) / Yao, Yu (Committee member) / Arizona State University (Publisher)
Created2015
Description
Semiconductor nanowires are important candidates for highly scaled three dimensional electronic devices. It is very advantageous to combine their scaling capability with the high yield of planar CMOS technology by integrating nanowire devices into planar circuits. The purpose of this research is to identify the challenges associated with the fabrication of vertically oriented Si and Ge nanowire diodes and modeling their electrical behavior so that they can be utilized to create unique three dimensional architectures that can boost the scaling of electronic devices into the next generation. In this study, vertical Ge and Si nanowire Schottky diodes have been fabricated using bottom-up vapor-liquid-solid (VLS) and top-down reactive ion etching (RIE) approaches respectively. VLS growth yields nanowires with atomically smooth sidewalls at sub-50 nm diameters but suffers from the problem that the doping increases radially outwards from the core of the devices. RIE is much faster than VLS and does not suffer from the problem of non-uniform doping. However, it yields nanowires with rougher sidewalls and gets exceedingly inefficient in yielding vertical nanowires for diameters below 50 nm. The I-V characteristics of both Ge and Si nanowire diodes cannot be adequately fit by the thermionic emission model. Annealing in forming gas which passivates dangling bonds on the nanowire surface is shown to have a considerable impact on the current through the Si nanowire diodes indicating that fixed charges and traps on the surface of the devices play a major role in determining their electrical behavior. Also, due to the vertical geometry of the nanowire diodes, electric field lines originating from the metal and terminating on their sidewalls can directly modulate their conductivity. Both these effects have to be included in the model aimed at predicting the current through vertical nanowire diodes. This study shows that the current through vertical nanowire diodes cannot be predicted accurately using the thermionic emission model which is suitable for planar devices and identifies the factors needed to build a comprehensive analytical model for predicting the current through vertically oriented nanowire diodes.
ContributorsChandra, Nishant (Author) / Goodnick, Stephen M (Thesis advisor) / Tracy, Clarence J. (Committee member) / Yu, Hongbin (Committee member) / Ferry, David K. (Committee member) / Arizona State University (Publisher)
Created2014
Description
In engineering, buckling is mechanical instability of walls or columns under compression and usually is a problem that engineers try to prevent. In everyday life buckles (wrinkles) on different substrates are ubiquitous -- from human skin to a rotten apple they are a commonly observed phenomenon. It seems that buckles with macroscopic wavelengths are not technologically useful; over the past decade or so, however, thanks to the widespread availability of soft polymers and silicone materials micro-buckles with wavelengths in submicron to micron scale have received increasing attention because it is useful for generating well-ordered periodic microstructures spontaneously without conventional lithographic techniques. This thesis investigates the buckling behavior of thin stiff films on soft polymeric substrates and explores a variety of applications, ranging from optical gratings, optical masks, energy harvest to energy storage. A laser scanning technique is proposed to detect micro-strain induced by thermomechanical loads and a periodic buckling microstructure is employed as a diffraction grating with broad wavelength tunability, which is spontaneously generated from a metallic thin film on polymer substrates. A mechanical strategy is also presented for quantitatively buckling nanoribbons of piezoelectric material on polymer substrates involving the combined use of lithographically patterning surface adhesion sites and transfer printing technique. The precisely engineered buckling configurations provide a route to energy harvesters with extremely high levels of stretchability. This stiff-thin-film/polymer hybrid structure is further employed into electrochemical field to circumvent the electrochemically-driven stress issue in silicon-anode-based lithium ion batteries. It shows that the initial flat silicon-nanoribbon-anode on a polymer substrate tends to buckle to mitigate the lithiation-induced stress so as to avoid the pulverization of silicon anode. Spontaneously generated submicron buckles of film/polymer are also used as an optical mask to produce submicron periodic patterns with large filling ratio in contrast to generating only ~100 nm edge submicron patterns in conventional near-field soft contact photolithography. This thesis aims to deepen understanding of buckling behavior of thin films on compliant substrates and, in turn, to harness the fundamental properties of such instability for diverse applications.
ContributorsMa, Teng (Author) / Jiang, Hanqing (Thesis advisor) / Yu, Hongyu (Committee member) / Yu, Hongbin (Committee member) / Poon, Poh Chieh Benny (Committee member) / Rajagopalan, Jagannathan (Committee member) / Arizona State University (Publisher)
Created2014
Description
In this work, a highly sensitive strain sensing technique is developed to realize in-plane strain mapping for microelectronic packages or emerging flexible or foldable devices, where mechanical or thermal strain is a major concern that could affect the performance of the working devices or even lead to the failure of the devices. Therefore strain sensing techniques to create a contour of the strain distribution is desired.
The developed highly sensitive micro-strain sensing technique differs from the existing strain mapping techniques, such as digital image correlation (DIC)/micro-Moiré techniques, in terms of working mechanism, by filling a technology gap that requires high spatial resolution while simultaneously maintaining a large field-of-view. The strain sensing mechanism relies on the scanning of a tightly focused laser beam onto the grating that is on the sample surface to detect the change in the diffracted beam angle as a result of the strain. Gratings are fabricated on the target substrates to serve as strain sensors, which carries the strain information in the form of variations in the grating period. The geometric structure of the optical system inherently ensures the high sensitivity for the strain sensing, where the nanoscale change of the grating period is amplified by almost six orders into a diffraction peak shift on the order of several hundred micrometers. It significantly amplifies the small signal measurements so that the desired sensitivity and accuracy can be achieved.
The important features, such as strain sensitivity and spatial resolution, for the strain sensing technique are investigated to evaluate the technique. The strain sensitivity has been validated by measurements on homogenous materials with well known reference values of CTE (coefficient of thermal expansion). 10 micro-strain has been successfully resolved from the silicon CTE extraction measurements. Furthermore, the spatial resolution has been studied on predefined grating patterns, which are assembled to mimic the uneven strain distribution across the sample surface. A resolvable feature size of 10 µm has been achieved with an incident laser spot size of 50 µm in diameter.
In addition, the strain sensing technique has been applied to a composite sample made of SU8 and silicon, as well as the microelectronic packages for thermal strain mappings.
The developed highly sensitive micro-strain sensing technique differs from the existing strain mapping techniques, such as digital image correlation (DIC)/micro-Moiré techniques, in terms of working mechanism, by filling a technology gap that requires high spatial resolution while simultaneously maintaining a large field-of-view. The strain sensing mechanism relies on the scanning of a tightly focused laser beam onto the grating that is on the sample surface to detect the change in the diffracted beam angle as a result of the strain. Gratings are fabricated on the target substrates to serve as strain sensors, which carries the strain information in the form of variations in the grating period. The geometric structure of the optical system inherently ensures the high sensitivity for the strain sensing, where the nanoscale change of the grating period is amplified by almost six orders into a diffraction peak shift on the order of several hundred micrometers. It significantly amplifies the small signal measurements so that the desired sensitivity and accuracy can be achieved.
The important features, such as strain sensitivity and spatial resolution, for the strain sensing technique are investigated to evaluate the technique. The strain sensitivity has been validated by measurements on homogenous materials with well known reference values of CTE (coefficient of thermal expansion). 10 micro-strain has been successfully resolved from the silicon CTE extraction measurements. Furthermore, the spatial resolution has been studied on predefined grating patterns, which are assembled to mimic the uneven strain distribution across the sample surface. A resolvable feature size of 10 µm has been achieved with an incident laser spot size of 50 µm in diameter.
In addition, the strain sensing technique has been applied to a composite sample made of SU8 and silicon, as well as the microelectronic packages for thermal strain mappings.
ContributorsLiang, Hanshuang (Author) / Yu, Hongbin (Thesis advisor) / Poon, Poh Chieh Benny (Committee member) / Jiang, Hanqing (Committee member) / Zhang, Yong-Hang (Committee member) / Arizona State University (Publisher)
Created2014
Description
Nanolasers represents the research frontier in both the areas of photonics and nanotechnology for its interesting properties in low dimension physics, its appealing prospects in integrated photonics, and other on-chip applications. In this thesis, I present my research work on fabrication and characterization of a new type of nanolasers: metallic cavity nanolasers. The last ten years witnessed a dramatic paradigm shift from pure dielectric cavity to metallic cavity in the research of nanolasers. By using low loss metals such as silver, which is highly reflective at near infrared, light can be confined in an ultra small cavity or waveguide with sub-wavelength dimensions, thus enabling sub-wavelength cavity lasers. Based on this idea, I fabricated two different kinds of metallic cavity nanolasers with rectangular and circular geometries with InGaAs as the gain material and silver as the metallic shell. The lasing wavelength is around 1.55 μm, intended for optical communication applications. Continuous wave (CW) lasing at cryogenic temperature under current injection was achieved on devices with a deep sub-wavelength physical cavity volume smaller than 0.2 λ3. Improving device fabrication process is one of the main challenges in the development of metallic cavity nanolasers due to its ultra-small size. With improved fabrication process and device design, CW lasing at room temperature was demonstrated as well on a sub-wavelength rectangular device with a physical cavity volume of 0.67 λ3. Experiments verified that a small circular nanolasers supporting TE¬01 mode can generate an azimuthal polarized laser beam, providing a compact such source under electrical injection. Sources with such polarizations could have many special applications. Study of digital modulation of circular nanolasers showed that laser noise is an important factor that will affect the data rate of the nanolaser when used as the light source in optical interconnects. For future development, improving device fabrication processes is required to improve device performance. In addition, techniques need to be developed to realize nanolaser/Si waveguide integration. In essence, resolving these two critical issues will finally pave the way for these nanolasers to be used in various practical applications.
ContributorsDing, Kang (Author) / Ning, Cun-Zheng (Thesis advisor) / Yu, Hongbin (Committee member) / Palais, Joseph (Committee member) / Zhang, Yong-Hang (Committee member) / Arizona State University (Publisher)
Created2014