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- Genre: Doctoral Dissertation
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Description
Though it is a widespread adaptation in humans and many other animals, parental care comes in a variety of forms and its subtle physiological costs, benefits, and tradeoffs related to offspring are often unknown. Thus, I studied the hydric, respiratory, thermal, and fitness dynamics of maternal egg-brooding behavior in Children's pythons (Antaresia childreni). I demonstrated that tight coiling detrimentally creates a hypoxic developmental environment that is alleviated by periodic postural adjustments. Alternatively, maternal postural adjustments detrimentally elevate rates of egg water loss relative to tight coiling. Despite ventilating postural adjustments, the developmental environment becomes increasingly hypoxic near the end of incubation, which reduces embryonic metabolism. I further demonstrated that brooding-induced hypoxia detrimentally affects offspring size, performance, locomotion, and behavior. Thus, parental care in A. childreni comes at a cost to offspring due to intra-offspring tradeoffs (i.e., those that reflect competing offspring needs, such as water balance and respiration). Next, I showed that, despite being unable to intrinsically produce body heat, A. childreni adjust egg-brooding behavior in response to shifts in nest temperature, which enhances egg temperature (e.g., reduced tight coiling during nest warming facilitated beneficial heat transfer to eggs). Last, I demonstrated that A. childreni adaptively adjust their egg-brooding behaviors due to an interaction between nest temperature and humidity. Specifically, females' behavioral response to nest warming was eliminated during low nest humidity. In combination with other studies, these results show that female pythons sense environmental temperature and humidity and utilize this information at multiple time points (i.e., during gravidity [egg bearing], at oviposition [egg laying], and during egg brooding) to enhance the developmental environment of their offspring. This research demonstrates that maternal behaviors that are simple and subtle, yet easily quantifiable, can balance several critical developmental variables (i.e., thermoregulation, water balance, and respiration).
ContributorsStahlschmidt, Zachary R (Author) / DeNardo, Dale F (Thesis advisor) / Harrison, Jon (Committee member) / McGraw, Kevin (Committee member) / Rutowski, Ronald (Committee member) / Walsberg, Glenn (Committee member) / Arizona State University (Publisher)
Created2011
Description
Parental care provides many benefits to offspring. One widely realized benefit is enhanced regulation of offspring's thermal environment. The developmental thermal environment during development can be optimized behaviorally through nest site selection and brooding, and it can be further enhanced by physiological heat production. In fact, enhancement of the developmental thermal environment has been proposed as the initial driving force for the evolution of endothermy in bird and mammals. I used pythons (Squamata: Pythonidae) to expand existing knowledge of behavioral and physiological parental tactics used to regulate offspring thermal environment. I first demonstrated that brooding behavior in the Children's python (Antaresia childreni) is largely driven by internal mechanisms, similar to solitary birds, suggesting that the early evolution of the parent-offspring association was probably hormonally driven. Two species of python are known to be facultatively thermogenic (i.e., are endothermic during reproduction). I expand current knowledge of thermogenesis in Burmese pythons (Python molurus) by demonstrating that females use their own body temperature to modulate thermogenesis. Although pythons are commonly cited as thermogenic, the actual extent of thermogenesis within the family Pythonidae is unknown. Thus, I assessed the thermogenic capability of five previously unstudied species of python to aid in understanding phylogenetic, morphological, and distributional influences on thermogenesis in pythons. Results suggest that facultative thermogenesis is likely rare among pythons. To understand why it is rare, I used an artificial model to demonstrate that energetic costs to the female likely outweigh thermal benefits to the clutch in species that do not inhabit cooler latitudes or lack large energy reserves. In combination with other studies, these results show that facultative thermogenesis during brooding in pythons likely requires particular ecological and physiological factors for its evolution.
ContributorsBrashears, Jake (Author) / DeNardo, Dale (Thesis advisor) / Harrison, Jon (Committee member) / Deviche, Pierre (Committee member) / McGraw, Kevin (Committee member) / Smith, Andrew (Committee member) / Arizona State University (Publisher)
Created2012
Description
In the last few decades, extensive research efforts have been focused on scaling down silicon-based complementary metal-oxide semiconductor (CMOS) technology to enable the continuation of Moore’s law. State-of-art CMOS includes fully depleted silicon-on-insulator (FDSOI) field-effect-transistors (FETs) with ultra-thin silicon channels (6 nm), as well as other three-dimensional (3D) device architectures like Fin-FETs, nanosheet FETs, etc. Significant research efforts have characterized these technologies towards various applications, and at different conditions including a wide range of temperatures from room temperature (300 K) down to cryogenic temperatures. Theoretical efforts have studied ultrascaled devices using Landauer theory to further understand their transport properties and predict their performance in the quasi-ballistic regime.Further scaling of CMOS devices requires the introduction of new semiconducting channel materials, as now established by the research community. Here, two-dimensional (2D) semiconductors have emerged as a promising candidate to replace silicon for next-generation ultrascaled CMOS devices. These emerging 2D semiconductors also have applications beyond CMOS, for example in novel memory, neuromorphic, and spintronic devices. Graphene is a promising candidate for spintronic devices due to its outstanding spin transport properties as evidenced by numerous studies in non-local lateral spin valve (LSV) geometries. The essential components of graphene-based LSV, such as graphene FETs, metal-graphene contacts, and tunneling barriers, were individually investigated as part of this doctoral dissertation.
In this work, several contributions were made to these CMOS and beyond CMOS technologies. This includes comprehensive characterization and modeling of FDSOI nanoscale FETs from room temperature down to cryogenic temperatures. Using Landauer theory for nanoscale transistors, FDSOI devices were analyzed and modeled under quasi-ballistic operation. This was extended towards a virtual-source modeling approach that accounts for temperature-dependent quasi-ballistic transport and back-gate biasing effects. Additionally, graphene devices with ultrathin high-k gate dielectrics were investigated towards FETs, non-volatile memory, and spintronic devices. New contributions were made relating to charge trapping effects and their impact on graphene device electrostatics (Dirac voltage shifts) and transport properties (impact on mobility and conductivity). This work also studied contact resistance and tunneling effects using transfer length method (TLM) graphene FET structures and magnetic tunneling junction (MTJ) towards graphene-based LSV.
ContributorsZhou, Guantong (Author) / Sanchez Esqueda, Ivan (Thesis advisor) / Vasileska, Dragica (Committee member) / Tongay, Sefaattin (Committee member) / Thornton, Trevor (Committee member) / Arizona State University (Publisher)
Created2023
Description
The research of alternative materials and new device architectures to exceed the limits of conventional silicon-based devices has been sparked by the persistent pursuit of semiconductor technology scaling. The development of tungsten diselenide (WSe2) and molybdenum disulfide (MoS2), well-known member of the transition metal dichalcogenide (TMD) family, has made great strides towards ultrascaled two-dimensional (2D) field-effect-transistors (FETs). The scaling issues facing silicon-based complementary metal-oxide-semiconductor (CMOS) technologies can be solved by 2D FETs, which show extraordinary potential.This dissertation provides a comprehensive experimental analysis relating to improvements in p-type metal-oxide-semiconductor (PMOS) FETs with few-layer WSe2 and high-κ metal gate (HKMG) stacks. Compared to this works improved methods, standard metallization (more damaging to underlying channel) results in significant Fermi-level pinning, although Schottky barrier heights remain small (< 100 meV) when using high work function metals. Temperature-dependent analysis reveals a dominant contribution to contact resistance from the damaged channel access region. Thus, through less damaging metallization methods combined with strongly scaled HKMG stacks significant improvements were achieved in contact resistance and PMOS FET overall performance. A clean contact/channel interface was achieved through high-vacuum evaporation and temperature-controlled stepped deposition. Theoretical analysis using a Landauer transport adapted to WSe2 Schottky barrier FETs (SB-FETs) elucidates the prospects of nanoscale 2D PMOS FETs indicating high-performance towards the ultimate CMOS scaling limit.
Next, this dissertation discusses how device electrical characteristics are affected by scaling of equivalent oxide thickness (EOT) and by adopting double-gate FET architectures, as well as how this might support CMOS scaling. An improved gate control over the channel is made possible by scaling EOT, improving on-off current ratios, carrier mobility, and subthreshold swing. This study also elucidates the impact of EOT scaling on FET gate hysteresis attributed to charge-trapping effects in high-κ-dielectrics prepared by atomic layer deposition (ALD). These developments in 2D FETs offer a compelling alternative to conventional silicon-based devices and a path for continued transistor scaling. This research contributes to ongoing efforts in 2D materials for future semiconductor technologies. Finally, this work introduces devices based on emerging Janus TMDs and bismuth oxyselenide (Bi2O2Se) layered semiconductors.
ContributorsPatoary, Md Naim Hossain (Author) / Sanchez Esqueda, Ivan (Thesis advisor) / Tongay, Sefaattin (Committee member) / Vasileska, Dragica (Committee member) / Goodnick, Stephen (Committee member) / Arizona State University (Publisher)
Created2023
Description
Complex perovskite materials, including Ba(Zn1/3Ta2/3)O3 (BZT), are commonly used to make resonators and filters in communication systems because of their low dielectric loss and high-quality factors (Q). Transition metal additives are introduced (i.e., Ni2+, Co2+, Mn2+) to act as sintering agents and tune their temperature coefficient to zero or near-zero. However, losses in these commercial dielectric materials at cryogenic temperatures increase markedly due to spin-excitation resulting from the presence of paramagnetic defects. Applying a large magnetic field (e.g., 5 Tesla) quenches these losses and has allowed the study of other loss mechanisms present at low temperatures. Work was performed on Fe3+ doped LaAlO3. At high magnetic fields, the residual losses versus temperature plots exhibit Debye peaks at ~40 K, ~75 K, and ~215 K temperature and can be tentatively associated with defect reactions O_i^x+V_O^x→O_i^'+V_O^•, Fe_Al^x+V_Al^"→Fe_Al^'+V_Al^' and Al_i^x+Al_i^(••)→〖2Al〗_i^•, respectively. Peaks in the loss tangent versus temperature graph of Zn-deficient BZT indicate a higher concentration of defects and appear to result from conduction losses.Guided by the knowledge gained from this study, a systematic study to develop high-performance microwave materials for ultra-high performance at cryogenic temperatures was performed. To this end, the production and characterization of perovskite materials that were either undoped or contained non-paramagnetic additives were carried out. Synthesis of BZT ceramic with over 98% theoretical density was obtained using B2O3 or BaZrO3 additives. At 4 K, the highest Q x f product of 283,000 GHz was recorded for 5% BaZrO3 doped BZT.
A portable, inexpensive open-air spectrometer was designed, built, and tested to make the electron paramagnetic resonance (EPR) technique more accessible for high-school and university lab instruction. In this design, the sample is placed near a dielectric resonator and does not need to be enclosed in a cavity, as is used in commercial EPR spectrometers. Permanent magnets used produce fields up to 1500 G, enabling EPR measurements up to 3 GHz.
ContributorsGajare, Siddhesh Girish (Author) / Newman, Nathan (Thesis advisor) / Alford, Terry (Committee member) / Tongay, Sefaattin (Committee member) / Chamberlin, Ralph (Committee member) / Arizona State University (Publisher)
Created2022
Description
Thin film solar cells are based on polycrystalline materials that contain a high concentration of intrinsic and extrinsic defects. Improving the device efficiency in such systems relies on understanding the nature of defects - whether they are positive, negative, or neutral in their influence - and their sources in order to engineer optimized absorbers. Oftentimes, these are studied individually, as characterization techniques are limited in their ability to directly relate material properties in individual layers to their impact on the actual device performance. Expanding the tools available for increased understanding of materials and devices has been critical for reducing the translation time of laboratory-scale research to changes in commercial module manufacturing lines. The use of synchrotron X-ray fluorescence (XRF) paired with X-ray beam induced current and voltage (XBIC, XBIV respectively) has proven to be an effective technique for understanding the impact of material composition and inhomogeneity on solar cell device functioning. The combination of large penetration depth, small spot size, and high flux allows for the measurement of entire solar cell stacks with high spatial resolution and chemical sensitivity. In this work, I combine correlative XRF/XBIC/XBIV with other characterization approaches across varying length scales, such as micro-Raman spectroscopy and photoluminescence, to understand how composition influences device performance in thin films. The work described here is broken into three sections. Firstly, understanding the influence of KF post-deposition treatment (PDT) and the use of Ag-alloying to reduce defect density in the Ga-free material system, CuInSe2 (CIS). Next, applying a similar characterization workflow to industrially relevant Ga-containing Cu(In1-xGax)Se2 (CIGS) modules with Ag and KF-PDT. The influence of light soaking and dark heat exposure on the modules are also studied in detail. Results show that Ag used with KF-PDT in CIS causes undesirable cation ordering at the CdS interface and affects the device through increased potential fluctuations. The results also demonstrate the importance of tuning the concentration of KF-PDT used when intended to be used in Ag-alloyed devices. Commercially-processed modules with optimized Ag and KF concentrations are shown to have the device performance instead be dominated by variations in the CIGS composition itself. In particular, changes in Cu and Se concentrations are found to be most influential on the device response to accelerated stressors such as dark heat exposure and light soaking. In the final chapter, simulations of nano-scale XBIC and XBIV are done to contribute to the understanding of these measurements.
ContributorsNietzold, Tara (Author) / Bertoni, Mariana I. (Thesis advisor) / Holt, Martin (Committee member) / Shafarman, William N. (Committee member) / Tongay, Sefaattin (Committee member) / Arizona State University (Publisher)
Created2021
Description
The application of silicon thin films in solar cells has evolved from their use in amorphous silicon solar cells to their use as passivating and carrier-selective contacts in crystalline silicon solar cells. Their use as carrier-selective contacts has enabled crystalline silicon solar cell efficiencies above 26%, just 3% shy of the theoretical efficiency limit. The two cell architectures that have exceeded 26% are the silicon heterojunction and tunnel oxide passivating contact cell. These two cell architectures use two different forms of silicon thin films. In the case of the silicon heterojunction, the crystalline wafer is sandwiched between layers of intrinsic amorphous silicon, which acts as the passivation layer, and doped amorphous silicon, which acts as the carrier-selective layer. On the other hand, the tunnel oxide passivating contact cell uses a thin silicon oxide passivation layer and a doped polycrystalline silicon layer as the carrier-selective layer. Both cell structures have their distinct advantages and disadvantages when it comes to production. The processing of the silicon heterojunction relies on a low thermal budget and leads to high open-circuit voltages, but the cost of high-vacuum processing equipment presents a major hurdle for industrial scale production while the tunnel oxide passivating contact can be easily integrated into current industrial lines, yet it requires a higher thermal budgets and does not produce as high of an open-circuit voltage as the silicon heterojunction. This work focuses on using both forms of silicon thin films applied as passivating and carrier-selective contacts to crystalline silicon thin films.First, a thorough analysis of the series resistivity in silicon heterojunction solar cells is conducted. In particular, variations in the thickness and doping of the individual
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contact layers are performed to reveal their effect on the contact resistivity and in turn the total series resistivity of the cell. Second, a tunnel oxide passivated contact is created using a novel deposition method for the silicon oxide layer. A 21% efficient proof-of-concept device is presented demonstrating the potential of this deposition method. Finally, recommendations to further improve the efficiency of these cells is presented.
ContributorsWeigand, William (Author) / Holman, Zachary (Thesis advisor) / Yu, Zhengshan (Committee member) / Bertoni, Mariana (Committee member) / Tongay, Sefaattin (Committee member) / Arizona State University (Publisher)
Created2023
Description
Rare-earth tritellurides (RTe3) are two-dimensional materials with unique quantum properties, ideal for investigating quantum phenomena and applications in supercapacitors, spintronics, and twistronics. This dissertation examines the electronic, magnetic, and phononic properties of the RTe3 family, exploring how these can be controlled using chemical pressure, cationic alloying, and external pressure.The impact of chemical pressure on RTe3 phononic properties was investigated through noninvasive micro-Raman spectroscopy, demonstrating the potential of optical measurements for determining charge density wave (CDW) transition temperatures. Cationic alloying studies showed seamless tuning of CDW transition temperatures by modifying lattice constants and revealed complex magnetism in alloyed RTe3 with multiple magnetic transitions.
A comprehensive external pressure study examined the influence of spacing between RTe3 layers on phononic and CDW properties across the RTe3 family. Comparisons between different RTe3 materials showed LaTe3, with the largest thermodynamic equilibrium interlayer spacing (smallest chemical pressure), has the most stable CDW phases at high pressures. Conversely, CDW phases in late RTe3 systems with larger internal chemical pressures were more easily suppressed by applied pressure.
The dissertation also investigated Schottky barrier realignment at RTe3/semiconductor interfaces induced by CDW transitions, revealing changes in Schottky barrier height and ideality factor around the CDW transition temperature. This indicates that chemical potential changes of RTe3 below the CDW transition temperature influence Schottky junction properties, enabling CDW state probing through interface property measurements.
A detailed experimental and theoretical analysis of the oxidation process of RTe3 compounds was performed, which revealed faster degradation in late RTe3 systems. Electronic property changes, like CDW transition temperature and chemical potential, are observed as degradation progresses. Quantum mechanical simulations suggested that degradation primarily results from strong oxidizing reactions with O2 molecules, while humidity (H2O) plays a negligible role unless Te vacancies exist.
Lastly, the dissertation establishes a large-area thin film deposition at relatively low temperatures using a soft sputtering technique. While focused on MoTe2 deposition, this technique may also apply to RTe3 thin film deposition.
Overall, this dissertation expands the understanding of the fundamental properties of RTe3 materials and lays the groundwork for potential device applications.
ContributorsYumigeta, Kentaro (Author) / Tongay, Sefaattin (Thesis advisor) / Ponce, Fernando (Committee member) / Drucker, Jeffery (Committee member) / Erten, Onur (Committee member) / Arizona State University (Publisher)
Created2023
Description
Janus Transition Metal Dichalcogenides (TMDs) are emerging 2D quantum materials with an asymmetric chalcogen configuration that induces an out-of-plane dipole moment. Their synthesis has been a limiting factor in exploring these systems' many-body physics and interactions. This dissertation examines the challenges associated with synthesis and charts the excitonic landscape of Janus crystals by proposing the development of the Selective Epitaxy and Atomic Replacement (SEAR) technique. SEAR utilizes ionized radical precursors to modify TMD monolayers into their Janus counterparts selectively. The synthesis is coupled with optical spectroscopy and monitored in real-time, enabling precise control of reaction kinetics and the structural evolution of Janus TMDs. The results demonstrate the synthesis of Janus TMDs at ambient temperatures, reducing defects and preserving the structural integrity with the hitherto best-reported exciton linewidth emission value, indicating ultra-high optical quality. Cryogenic optical spectroscopy (4K) coupled with a magnetic field on Janus monolayers has allowed the isolation of excitonic transitions and the identification of charged exciton complexes. Further study into macroscopic and microscopic defects reveals that structural asymmetry results in the spontaneous formation of 2D Janus Nanoscrolls from an in-plane strain. The chalcogen arrangement in these structures dictates two types of scrolling dynamics that form Archimedean or inverted C-scrolls. High-resolution scanning transmission electron microscopy of these superlattices shows a preferential orientation of scrolling and formation of Moiré patterns. These materials' thermodynamically favorable defect states are identified and shown to be optically active. The encapsulation of Janus TMDs with hexagonal Boron Nitride (h-BN) has allowed isolation defect transitions. DFT coupled with power-dependent PL spectroscopy at 4K shows the broad defect band to be a convolution of individual defect states with extremely narrow linewidth (2 meV) indicative of a two-state quantum system. The research presents a comprehensive synthesis approach with insights into the structural and morphological stability of 2D Janus layers, establishing a complete structure-property correlation of optical transitions and defect states, broadening the scope for practical applications in quantum information technologies.
ContributorsSayyad, Mohammed Yasir (Author) / Tongay, Sefaattin (Thesis advisor) / Esqueda, Ivan S (Committee member) / Zhuang, Houlong (Committee member) / Arizona State University (Publisher)
Created2024
Description
Recently, two-dimensional (2D) materials have emerged as a new class of materials with highly attractive electronic, optical, magnetic, and thermal properties. However, there exists a sub-category of 2D layers wherein constituent metal atoms are arranged in a way that they form weakly coupled chains confined in the 2D landscape. These weakly coupled chains extend along particular lattice directions and host highly attractive properties including high thermal conduction pathways, high-mobility carriers, and polarized excitons. In a sense, these materials offer a bridge between traditional one-dimensional (1D) materials (nanowires and nanotubes) and 2D layered systems. Therefore, they are often referred as pseudo-1D materials, and are anticipated to impact photonics and optoelectronics fields.
This dissertation focuses on the novel growth routes and fundamental investigation of the physical properties of pseudo-1D materials. Example systems are based on transition metal chalcogenide such as rhenium disulfide (ReS2), titanium trisulfide (TiS3), tantalum trisulfide (TaS3), and titanium-niobium trisulfide (Nb(1-x)TixS3) ternary alloys. Advanced growth, spectroscopy, and microscopy techniques with density functional theory (DFT) calculations have offered the opportunity to understand the properties of these materials both experimentally and theoretically. The first controllable growth of ReS2 flakes with well-defined domain architectures has been established by a state-of-art chemical vapor deposition (CVD) method. High-resolution electron microscopy has offered the very first investigation into the structural pseudo-1D nature of these materials at an atomic level such as the chain-like features, grain boundaries, and local defects.
Pressure-dependent Raman spectroscopy and DFT calculations have investigated the origin of the Raman vibrational modes in TiS3 and TaS3, and discovered the unusual pressure response and its effect on Raman anisotropy. Interestingly, the structural and vibrational anisotropy can be retained in the Nb(1-x)TixS3 alloy system with the presence of phase transition at a nominal Ti alloying limit. Results have offered valuable experimental and theoretical insights into the growth routes as well as the structural, optical, and vibrational properties of typical pseudo-1D layered systems. The overall findings hope to shield lights to the understanding of this entire class of materials and benefit the design of 2D electronics and optoelectronics.
This dissertation focuses on the novel growth routes and fundamental investigation of the physical properties of pseudo-1D materials. Example systems are based on transition metal chalcogenide such as rhenium disulfide (ReS2), titanium trisulfide (TiS3), tantalum trisulfide (TaS3), and titanium-niobium trisulfide (Nb(1-x)TixS3) ternary alloys. Advanced growth, spectroscopy, and microscopy techniques with density functional theory (DFT) calculations have offered the opportunity to understand the properties of these materials both experimentally and theoretically. The first controllable growth of ReS2 flakes with well-defined domain architectures has been established by a state-of-art chemical vapor deposition (CVD) method. High-resolution electron microscopy has offered the very first investigation into the structural pseudo-1D nature of these materials at an atomic level such as the chain-like features, grain boundaries, and local defects.
Pressure-dependent Raman spectroscopy and DFT calculations have investigated the origin of the Raman vibrational modes in TiS3 and TaS3, and discovered the unusual pressure response and its effect on Raman anisotropy. Interestingly, the structural and vibrational anisotropy can be retained in the Nb(1-x)TixS3 alloy system with the presence of phase transition at a nominal Ti alloying limit. Results have offered valuable experimental and theoretical insights into the growth routes as well as the structural, optical, and vibrational properties of typical pseudo-1D layered systems. The overall findings hope to shield lights to the understanding of this entire class of materials and benefit the design of 2D electronics and optoelectronics.
ContributorsWu, Kedi (Author) / Tongay, Sefaattin (Thesis advisor) / Zhuang, Houlong (Committee member) / Green, Matthew (Committee member) / Arizona State University (Publisher)
Created2018