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- Genre: Doctoral Dissertation
- Creators: Bakkaloglu, Bertan
- Creators: Yu, Hongbin
Description
This dissertation aims to study the electron and spin transport, scattering in two dimensional pseudospin-1 lattice systems, hybrid systems of topological insulator and magnetic insulators, and molecule chain systems. For pseudospin-1 systems, the energy band consists of a pair of Dirac cones and a flat band through the connecting point of the cones. First, contrary to the conditional wisdom that flatband can localize electrons, I find that in a non-equilibrium situation where a constant electric field is suddenly switched on, the flat band can enhance the resulting current in both the linear and nonlinear response regimes compared to spin-1/2 system. Second, in the setup of massive pseudospin-1 electron scattering over a gate potential scatterer, I discover the large resonant skew scattering called super skew scattering, which does not arise in the corresponding spin-1/2 system and massless pseudospin-1 system. Third, by applying an appropriate gate voltage to generate a cavity in an alpha-T3 lattice, I find the exponential decay of the quasiparticles from a chaotic cavity, with a one-to-one correspondence between the exponential decay rate and the Berry phase for the entire family of alpha-T3 materials. Based on the hybrid system of a ferromagnetic insulator on top of a topological insulator, I first investigate the magnetization dynamics of a pair of ferromagnetic insulators deposited on the surface of a topological insulator. The spin polarized current on the surface of topological insulator can affect the magnetization of the two ferromagnetic insulators through proximity effect, which in turn modulates the electron transport, giving rise to the robust phase locking between the two magnetization dynamics. Second, by putting a skyrmion structure on top of a topological insulator, I find robust electron skew scattering against skyrmion structure even with deformation, due to the emergence of resonant modes. The chirality of molecule can lead to spin polarized transport due to the spin orbit interaction. I investigate spin transport through a chiral polyacetylene molecule and uncover the emergence of spin Fano resonances as a manifestation of the chiral induced spin selectivity effect.
ContributorsWang, Chengzhen (Author) / Lai, Ying-Cheng (Thesis advisor) / Yu, Hongbin (Committee member) / Wang, Chao (Committee member) / Zhao, Yuji (Committee member) / Arizona State University (Publisher)
Created2021
Description
Wide bandgap semiconductors, also known as WBG semiconductors are materials which have larger bandgaps than conventional semiconductors such as Si or GaAs. They permit devices to operate at much higher voltages, frequencies and temperatures. They are the key material used to make LEDs, lasers, radio frequency applications, military applications, and power electronics. Their intrinsic qualities make them promising for next-generation devices for general semiconductor use. Their ability to handle higher power density is particularly attractive for attempts to sustain Moore's law, as conventional technologies appear to be reaching a bottleneck. Apart from WBG materials, ultra-wide bandgap (UWBG) materials, such as Ga2O3, AlN, diamond, or BN, are also attractive since they have even more extreme properties. Although this field is relatively new, which still remains a lot of effort to study and investigate, people can still expect that these materials could be the main characters for more advanced applications in the near future.
In the dissertation, three topics with power devices made by WBG or UWBG semiconductors were introduced. In chapter 1, a generally background knowledge introduction is given. This helps the reader to learn current research focuses. In chapter 2, a comprehensive study of temperature-dependent characteristics of Ga2O3 SBDs with highly-doped substrate is demonstrated. A modified thermionic emission model over an inhomogeneous barrier with a voltage-dependent barrier height is investigated. Besides, the mechanism of surface leakage current is also discussed. These results are beneficial for future developments of low-loss β-Ga2O3 electronics and optoelectronics. In chapter 3, vertical GaN Schottky barrier diodes (SBDs) with floating metal rings (FMRs) as edge termination structures on bulk GaN substrates was introduced. This work represents a useful reference for the FMR termination design for GaN power devices. In chapter 4, AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) fabricated on Si substrates with a 10 nm boron nitride (BN) layer as gate dielectric was demonstrated. The material characterization was investigated by X-ray photoelectric spectroscopy (XPS) and UV photoelectron spectroscopy (UPS). And the gate leakage current mechanisms were also investigated by temperature-dependent current-voltage measurements.
Although still in its infancy, past and projected future progress of electronic designs will ultimately achieve this very goal that WBG and UWBG semiconductors will be indispensable for today and future’s science, technologies and society.
ContributorsYang, Tsung-Han (Author) / Zhao, Yuji (Thesis advisor) / Vasileska, Dragica (Committee member) / Yu, Hongbin (Committee member) / Nemanich, Robert (Committee member) / Arizona State University (Publisher)
Created2021
Description
Wurtzite (B, Ga, Al) N semiconductors, especially (Ga, Al) N material systems, demonstrate immense promises to boost the economic growth in the semiconductor industry that is approaching the end of Moore’s law. At the material level, their high electric field strength, high saturation velocity, and unique heterojunction polarization charge have enabled tremendous potentials for high power, high frequency, and photonic applications. With the availability of large-area bulk GaN substrates and high-quality epilayer on foreign substrates, the power conversion applications of GaN are now at the cusp of commercialization.Despite these encouraging advances, there remain two critical hurdles in GaN-based technology: selective area doping and hole-based p-channel devices. Current selective area doping methods are still immature and lead to low-quality lateral p-n junctions, which prevent the realization of advanced power transistors and rectifiers. The missing of hole-based p-channel devices hinders the development of GaN complementary integrated circuits.
This thesis comprehensively studied these challenges. The first part (chapter 2) researched the selective area doping by etch-then-regrow. A GaN-based vertical-channel junction field-effect transistors (VC-JFETs) was experimentally demonstrated by blanket regrowth and self-planarization. The devices’ electrical performances were characterized to understand the regrowth quality. The non-ideal factors during p-GaN regrowth were also discussed. The second part (chapter 3-5) systematically studied the application of the hydrogen plasma treatment process to change the p-GaN properties selectively. A novel GaN-based metal-insulator-semiconductor junction was demonstrated. Then a novel edge termination design with avalanche breakdown capability achieved in GaN power rectifiers is proposed. The last part (Chapter 6) demonstrated a GaN-based p-channel heterojunction field-effect transistor, with record low leakage, subthreshold swing, and a record high on/off ratio. In the end, some outlook and future work have also been proposed.
Although in infancy, the demonstrated etch-then-regrow and the hydrogen plasma treatment methods have the potential to ultimately solve the challenges in GaN and benefit the development of the wide-ultra-wide bandgap industry, technology, and society.
ContributorsYang, Chen (Author) / Zhao, Yuji (Thesis advisor) / Goodnick, Stephen (Committee member) / Yu, Hongbin (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2021
Description
This thesis presents three novel studies. The first two works focus on galvanically isolated chip-to-chip communication, and the third research studies class-E pulse-width modulated power amplifiers. First, a common-mode resilient CMOS (complementary metal-oxide-semiconductor) galvanically isolated Radio Frequency (RF) chip-to-chip communication system is presented utilizing laterally resonant coupled circuits to increases maximum common-mode transient immunity and the isolation capability of galvanic isolators in a low-cost standard CMOS solution beyond the limits provided from the vertical coupling. The design provides the highest reported CMTI (common-mode transient immunity) of more than 600 kV/µs, 5 kVpk isolation, and a chip area of 0.95 mm2. In the second work, a bi-directional ultra-wideband transformer-coupled galvanic isolator is reported for the first time. The proposed design merges the functionality of two isolated channels into one magnetically coupled communication, enabling up to 50% form-factor and assembly cost reduction while achieving a simultaneously robust and state-of-art performance. This work achieves simultaneous robust, wideband, and energy-efficient performance of 300 Mb/s data rate, isolation of 7.8 kVrms, and power consumption and propagation delay of 200 pJ/b and 5 ns, respectively, in only 0.8 mm2 area. The third works studies class-E pulse-width modulated (PWM) Power amplifiers (PAs). For the first time, it presents a design technique to significantly extend the Power back-off (PBO) dynamic range of PWM PAs over the prior art. A proof-of-concept watt-level class-E PA is designed using a GaN HEMT and exhibits more than 6dB dynamic range for a 50 to 30 percent duty cycle variation. Moreover, in this work, the effects of non-idealities on performance and design of class-E power amplifiers for variable supply on and pulse-width operations are characterized and studied, including the effect of non-linear parasitic capacitances and its exploitation for enhancement of average efficiency and self-heating effects in class-E SMPAs using a new over dry-ice measurement technique was presented for this first time. The non-ideality study allows for capturing a full view of the design requirement and considerations of class-E power amplifiers and provides a window to the phenomena that lead to a mismatch between the ideal and actual performance of class-E power amplifiers and their root causes.
ContributorsJavidahmadabadi, Mahdi (Author) / Kitchen, Jennifer N (Thesis advisor) / Aberle, James (Committee member) / Bakkaloglu, Bertan (Committee member) / Burton, Richard (Committee member) / Arizona State University (Publisher)
Created2021
Description
A new class of electronic materials from food and foodstuff was developed to form a “toolkit” for edible electronics along with inorganic materials. Electrical components like resistors, capacitors and inductors were fabricated with such materials and tested. Applicable devices such as filters, microphones and pH sensors were built with edible materials. Among the applications, a wireless edible pH sensor was optimized in terms of form factor, fabrication process and cost. This dissertation discusses the material sciences of food industry, design and fabrication of electronics and biomedical engineering by demonstrating edible electronic materials, components and devices such as filters, microphones and pH sensors. pH sensors are optimized for two different generations of design and fabrication.
ContributorsYang, Haokai (Author) / Jiang, Hanqing (Thesis advisor) / Yu, Hongbin (Thesis advisor) / Yao, Yu (Committee member) / Nian, Qiong (Committee member) / Zhuang, Houlong (Committee member) / Arizona State University (Publisher)
Created2021
Description
In this dissertation, I described my research on the growth and characterization of various nanostructures, such as nanowires, nanobelts and nanosheets, of different semiconductors in a Chemical Vapor Deposition (CVD) system.
In the first part of my research, I selected chalcogenides (such as CdS and CdSe) for a comprehensive study in growing two-segment axial nanowires and radial nanobelts/sheets using the ternary CdSxSe1-x alloys. I demonstrated simultaneous red (from CdSe-rich) and green (from CdS-rich) light emission from a single monolithic heterostructure with a maximum wavelength separation of 160 nm. I also demonstrated the first simultaneous two-color lasing from a single nanosheet heterostructure with a wavelength separation of 91 nm under sufficiently strong pumping power.
In the second part, I considered several combinations of source materials with different growth methods in order to extend the spectral coverage of previously demonstrated structures towards shorter wavelengths to achieve full-color emissions. I achieved this with the growth of multisegment heterostructure nanosheets (MSHNs), using ZnS and CdSe chalcogenides, via our novel growth method. By utilizing this method, I demonstrated the first growth of ZnCdSSe MSHNs with an overall lattice mismatch of 6.6%, emitting red, green and blue light simultaneously, in a single furnace run using a simple CVD system. The key to this growth method is the dual ion exchange process which converts nanosheets rich in CdSe to nanosheets rich in ZnS, demonstrated for the first time in this work. Tri-chromatic white light emission with different correlated color temperature values was achieved under different growth conditions. We demonstrated multicolor (191 nm total wavelength separation) laser from a single monolithic semiconductor nanostructure for the first time. Due to the difficulties associated with growing semiconductor materials of differing composition on a given substrate using traditional planar epitaxial technology, our nanostructures and growth method are very promising for various device applications, including but not limited to: illumination, multicolor displays, photodetectors, spectrometers and monolithic multicolor lasers.
In the first part of my research, I selected chalcogenides (such as CdS and CdSe) for a comprehensive study in growing two-segment axial nanowires and radial nanobelts/sheets using the ternary CdSxSe1-x alloys. I demonstrated simultaneous red (from CdSe-rich) and green (from CdS-rich) light emission from a single monolithic heterostructure with a maximum wavelength separation of 160 nm. I also demonstrated the first simultaneous two-color lasing from a single nanosheet heterostructure with a wavelength separation of 91 nm under sufficiently strong pumping power.
In the second part, I considered several combinations of source materials with different growth methods in order to extend the spectral coverage of previously demonstrated structures towards shorter wavelengths to achieve full-color emissions. I achieved this with the growth of multisegment heterostructure nanosheets (MSHNs), using ZnS and CdSe chalcogenides, via our novel growth method. By utilizing this method, I demonstrated the first growth of ZnCdSSe MSHNs with an overall lattice mismatch of 6.6%, emitting red, green and blue light simultaneously, in a single furnace run using a simple CVD system. The key to this growth method is the dual ion exchange process which converts nanosheets rich in CdSe to nanosheets rich in ZnS, demonstrated for the first time in this work. Tri-chromatic white light emission with different correlated color temperature values was achieved under different growth conditions. We demonstrated multicolor (191 nm total wavelength separation) laser from a single monolithic semiconductor nanostructure for the first time. Due to the difficulties associated with growing semiconductor materials of differing composition on a given substrate using traditional planar epitaxial technology, our nanostructures and growth method are very promising for various device applications, including but not limited to: illumination, multicolor displays, photodetectors, spectrometers and monolithic multicolor lasers.
ContributorsTurkdogan, Sunay (Author) / Ning, Cun Zheng (Thesis advisor) / Palais, Joseph C. (Committee member) / Yu, Hongbin (Committee member) / Mardinly, A. John (Committee member) / Arizona State University (Publisher)
Created2015
Description
Few-layer black phosphorous (FLBP) is one of the most important two-dimensional (2D) materials due to its strongly layer-dependent quantized bandstructure, which leads to wavelength-tunable optical and electrical properties. This thesis focuses on the preparation of stable, high-quality FLBP, the characterization of its optical properties, and device applications.Part I presents an approach to preparing high-quality, stable FLBP samples by combining O2 plasma etching, boron nitride (BN) sandwiching, and subsequent rapid thermal annealing (RTA). Such a strategy has successfully produced FLBP samples with a record-long lifetime, with 80% of photoluminescence (PL) intensity remaining after 7 months. The improved material quality of FLBP allows the establishment of a more definitive relationship between the layer number and PL energies.
Part II presents the study of oxygen incorporation in FLBP. The natural oxidation formed in the air environment is dominated by the formation of interstitial oxygen and dangling oxygen. By the real-time PL and Raman spectroscopy, it is found that continuous laser excitation breaks the bonds of interstitial oxygen, and free oxygen atoms can diffuse around or form dangling oxygen under low heat. RTA at 450 °C can turn the interstitial oxygen into dangling oxygen more thoroughly. Such oxygen-containing samples show similar optical properties to the pristine BP samples. The bandgap of such FLBP samples increases with the concentration of the incorporated oxygen.
Part III deals with the investigation of emission natures of the prepared samples. The power- and temperature-dependent measurements demonstrate that PL emissions are dominated by excitons and trions, with a combined percentage larger than 80% at room temperature. Such measurements allow the determination of trion and exciton binding energies of 2-, 3-, and 4-layer BP, with values around 33, 23, 15 meV for trions and 297, 276, 179 meV for excitons at 77K, respectively.
Part IV presents the initial exploration of device applications of such FLBP samples. The coupling between photonic crystal cavity (PCC) modes and FLBP's emission is realized by integrating the prepared sandwich structure onto 2D PCC. Electroluminescence has also been achieved by integrating such materials onto interdigital electrodes driven by alternating electric fields.
ContributorsLi, Dongying (Author) / Ning, Cun-Zheng (Thesis advisor) / Vasileska, Dragica (Committee member) / Lai, Ying-Cheng (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2022
Description
Impedance is one of the fundamental properties of electrical components, materials, and waves. Therefore, impedance measurement and monitoring have a wide range of applications. The multi-port technique is a natural candidate for impedance measurement and monitoring due to its low overhead and ease of implementation for Built-in Self-Test (BIST) applications. The multi-port technique can measure complex reflection coefficients, thus impedance, by using scalar measurements provided by the power detectors. These power detectors are strategically placed on different points (ports) of a passive network to produce unique solution. Impedance measurement and monitoring is readily deployed on mobile phone radio-frequency (RF) front ends, and are combined with antenna tuners to boost the signal reception capabilities of phones. These sensors also can be used in self-healing circuits to improve their yield and performance under process, voltage, and temperature variations. Even though, this work is preliminary interested in low-overhead impedance measurement for RF circuit applications, the proposed methods can be used in a wide variety of metrology applications where impedance measurements are already used. Some examples of these applications include determining material properties, plasma generation, and moisture detection. Additionally, multi-port applications extend beyond the impedance measurement. There are applications where multi-ports are used as receivers for communication systems, RADARs, and remote sensing applications. The multi-port technique generally requires a careful design of the testing structure to produce a unique solution from power detector measurements. It also requires the use of nonlinear solvers during calibration, and depending on calibration procedure, measurement. The use of nonlinear solvers generates issues for convergence, computational complexity, and resources needed for carrying out calibrations and measurements in a timely manner. In this work, using periodic structures, a structure where a circuit block repeats itself, for multi-port measurements is proposed. The periodic structures introduce a new constraint that simplifies the multi-port theory and leads to an explicit calibration and measurement procedure. Unlike the existing calibration procedures which require at least five loads and various constraints on the load for explicit solution, the proposed method can use three loads for calibration. Multi-ports built with periodic structures will always produce a unique measurement result. This leads to increased bandwidth of operation and simplifies design procedure. The efficacy of the method demonstrated in two embodiments.
In the first embodiment, a multi-port is directly embedded into a matching network to measure impedance of the load.
In the second embodiment, periodic structures are used to compare two loads without requiring any calibration.
ContributorsAvci, Muslum Emir (Author) / Ozev, Sule (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Kitchen, Jennifer (Committee member) / Trichopoulos, Georgios (Committee member) / Arizona State University (Publisher)
Created2023
Description
The integration of Distributed Energy Resources (DER), including wind energy and photovoltaic (PV) panels, into power systems, increases the potential for events that could lead to outages and cascading failures. This risk is heightened by the limited dynamic information in energy grid datasets, primarily due to sparse Phasor Measurement Units (PMUs) placement. This data quality issue underscores the need for effective methodologies to manage these challenges. One significant challenge is the data gaps in low-resolution (LR) data from RTU and smart meters, hindering robust machine learning (ML) applications. To address this, a systematic approach involves preparing data effectively and designing efficient event detection methods, utilizing both intrinsic physics and extrinsic correlations from power systems. The process begins by interpolating LR data using high-resolution (HR) data, aiming to create virtual PMUs for improved grid management. Current interpolation methods often overlook extrinsic spatial-temporal correlations and intrinsic governing equations like Ordinary Differential Equations (ODEs) or Differential Algebraic Equations (DAEs). Physics-Informed Neural Networks (PINNs) are used for this purpose, though they face challenges with limited LR samples. The solution involves exploring the embedding space governed by ODEs/DAEs, generating extrinsic correlations for initial LR data imputation, and enforcing intrinsic physical constraints for refinement. After data preparation, event data dimensions such as spatial, temporal, and measurement categories are recovered in a tensor. To prevent overfitting, common in traditional ML methods, tensor decomposition is used. This technique merges intrinsic and physical information across dimensions, yielding informative and compact feature vectors for efficient feature extraction and learning in event detection. Lastly, in grids with insufficient data, knowledge transfer from grids with similar event patterns is a viable solution. This involves optimizing projected and transferred vectors from tensor decomposition to maximize common knowledge utilization across grids. This strategy identifies common features, enhancing the robustness and efficiency of ML event detection models, even in scenarios with limited event data.
ContributorsMa, Zhihao (Author) / Weng, Yang (Thesis advisor) / Wu, Meng (Committee member) / Yu, Hongbin (Committee member) / Matavalam, Amarsagar Reddy Ramapuram (Committee member) / Arizona State University (Publisher)
Created2023
Description
Recent advancements in communication standards, such as 5G demand transmitter hardware to support high data rates with high energy efficiency. With the revolution of communication standards, modulation schemes have become more complex and require high peak-to-average (PAPR) signals. In wireless transceiver hardware, the power amplifier (PA) consumes most of the transceiver’s DC power and is typically the bottleneck for transmitter linearity. Therefore, the transmitter’s performance directly depends on the PA. To support high PAPR signals, the PA must operate efficiently at its saturated and backoff output power. Maintaining high efficiency at both peak and backoff output power is challenging. One effective technique for addressing this problem is load modulation. Some of the prominent load-modulated PA architectures are outphasing PAs, load-modulated balanced amplifiers (LMBA), envelope elimination and restoration (EER), envelope tracking (ET), Doherty power amplifiers (DPA), and polar transmitters. Amongst them, the DPA is the most popular for infrastructure applications due to its simpler architecture compared to other techniques and linearizability with digital pre-distortion (DPD). Another crucial characteristic of progressing communication standards is wide signal bandwidths. High-efficiency power amplifiers like class J/F/F-1 and load-modulated PAs like the DPA exhibit narrowband performance because the amplifiers require precise output impedance terminations. Therefore, it is equally essential to develop adaptable PA solutions to process radio frequency (RF) signals with wide bandwidths. To support modern and future cellular infrastructure, RF PAs need to be innovated to increase the backoff power efficiency by two times or more and support ten times or more wider bandwidths than current state-of-the-art PAs. This work presents five RF PA analyses and implementations to support future wireless communications transmitter hardware. Chapter 2 presents an optimized output-matching network analysis and design to achieve extended output power backoff of the DPA. Chapters 3 and 4 unveil two bandwidth enhancement techniques for the DPA while maintaining extended output power backoff. Chapter 5 exhibits a dual-band hybrid mode PA design targeted for wideband applications. Chapter 6 presents a built-in self-test circuit integrated into a PA for output impedance monitoring. This can alleviate the PA performance degradation due to the variation in the PA's output load over frequency, process, and aging. All RF PAs in this dissertation are implemented using Gallium Nitride (GaN)-based high electron mobility transistors (HEMT), and the realized designs validate the proposed PAs' theories/architectures.
ContributorsRoychowdhury, Debatrayee (Author) / Kitchen, Jennifer (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Ozev, Sule (Committee member) / Aberle, James (Committee member) / Arizona State University (Publisher)
Created2024