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- Genre: Doctoral Dissertation
Description
As crystalline silicon solar cells continue to get thinner, the recombination of carriers at the surfaces of the cell plays an ever-important role in controlling the cell efficiency. One tool to minimize surface recombination is field effect passivation from the charges present in the thin films applied on the cell surfaces. The focus of this work is to understand the properties of charges present in the SiNx films and then to develop a mechanism to manipulate the polarity of charges to either negative or positive based on the end-application. Specific silicon-nitrogen dangling bonds (·Si-N), known as K center defects, are the primary charge trapping defects present in the SiNx films. A custom built corona charging tool was used to externally inject positive or negative charges in the SiNx film. Detailed Capacitance-Voltage (C-V) measurements taken on corona charged SiNx samples confirmed the presence of a net positive or negative charge density, as high as +/- 8 x 1012 cm-2, present in the SiNx film. High-energy (~ 4.9 eV) UV radiation was used to control and neutralize the charges in the SiNx films. Electron-Spin-Resonance (ESR) technique was used to detect and quantify the density of neutral K0 defects that are paramagnetically active. The density of the neutral K0 defects increased after UV treatment and decreased after high temperature annealing and charging treatments. Etch-back C-V measurements on SiNx films showed that the K centers are spread throughout the bulk of the SiNx film and not just near the SiNx-Si interface. It was also shown that the negative injected charges in the SiNx film were stable and present even after 1 year under indoor room-temperature conditions. Lastly, a stack of SiO2/SiNx dielectric layers applicable to standard commercial solar cells was developed using a low temperature (< 400 °C) PECVD process. Excellent surface passivation on FZ and CZ Si substrates for both n- and p-type samples was achieved by manipulating and controlling the charge in SiNx films.
ContributorsSharma, Vivek (Author) / Bowden, Stuart (Thesis advisor) / Schroder, Dieter (Committee member) / Honsberg, Christiana (Committee member) / Roedel, Ronald (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2013
Description
Ball Grid Array (BGA) using lead-free or lead-rich solder materials are widely used as Second Level Interconnects (SLI) in mounting packaged components to the printed circuit board (PCB). The reliability of these solder joints is of significant importance to the performance of microelectronics components and systems. Product design/form-factor, solder material, manufacturing process, use condition, as well as, the inherent variabilities present in the system, greatly influence product reliability. Accurate reliability analysis requires an integrated approach to concurrently account for all these factors and their synergistic effects. Such an integrated and robust methodology can be used in design and development of new and advanced microelectronics systems and can provide significant improvement in cycle-time, cost, and reliability. IMPRPK approach is based on a probabilistic methodology, focusing on three major tasks of (1) Characterization of BGA solder joints to identify failure mechanisms and obtain statistical data, (2) Finite Element analysis (FEM) to predict system response needed for life prediction, and (3) development of a probabilistic methodology to predict the reliability, as well as, the sensitivity of the system to various parameters and the variabilities. These tasks and the predictive capabilities of IMPRPK in microelectronic reliability analysis are discussed.
ContributorsFallah-Adl, Ali (Author) / Tasooji, Amaneh (Thesis advisor) / Krause, Stephen (Committee member) / Alford, Terry (Committee member) / Jiang, Hanqing (Committee member) / Mahajan, Ravi (Committee member) / Arizona State University (Publisher)
Created2013
Description
Silicon solar cells with heterojunction carrier collectors based on a-Si/c-Si heterojunction (SHJ) have a potential to overcome the limitations of the conventional diffused junction solar cells and become the next industry standard manufacturing technology of solar cells. A brand feature of SHJ technology is ultrapassivated surfaces with already demonstrated 750 mV open circuit voltages (Voc) and 24.7% efficiency on large area solar cell. Despite very good results achieved in research and development, large volume manufacturing of high efficiency SHJ cells remains a fundamental challenge. The main objectives of this work were to develop a SHJ solar cell fabrication flow using industry compatible tools and processes in a pilot production environment, study the interactions between the used fabrication steps, identify the minimum set of optimization parameters and characterization techniques needed to achieve 20% baseline efficiency, and analyze the losses of power in fabricated SHJ cells by numerical and analytical modeling. This manuscript presents a detailed description of a SHJ solar cell fabrication flow developed at ASU Solar Power Laboratory (SPL) which allows large area solar cells with >750 mV Voc. SHJ cells on 135 um thick 153 cm2 area wafers with 19.5% efficiency were fabricated. Passivation quality of (i)a-Si:H film, bulk conductivity of doped a-Si films, bulk conductivity of ITO, transmission of ITO and the thickness of all films were identified as the minimum set of optimization parameters necessary to set up a baseline high efficiency SHJ fabrication flow. The preparation of randomly textured wafers to minimize the concentration of surface impurities and to avoid epitaxial growth of a-Si films was found to be a key challenge in achieving a repeatable and uniform passivation. This work resolved this issue by using a multi-step cleaning process based on sequential oxidation in nitric/acetic acids, Piranha and RCA-b solutions. The developed process allowed state of the art surface passivation with perfect repeatability and negligible reflectance losses. Two additional studies demonstrated 750 mV local Voc on 50 micron thick SHJ solar cell and < 1 cm/s effective surface recombination velocity on n-type wafers passivated by a-Si/SiO2/SiNx stack.
ContributorsHerasimenka, Stanislau Yur'yevich (Author) / Honsberg, C. (Christiana B.) (Thesis advisor) / Bowden, Stuart G (Thesis advisor) / Tracy, Clarence (Committee member) / Vasileska, Dragica (Committee member) / Holman, Zachary (Committee member) / Sinton, Ron (Committee member) / Arizona State University (Publisher)
Created2013
Description
ABSTRACT Along with the fast development of science and technology, the studied materials are becoming more complicated and smaller. All these achievements have advanced with the fast development of powerful tools currently, such as Scanning electron microscopy (SEM), Focused Ion Beam (FIB), Transmission electron microscopy (TEM), Energy dispersive X-ray spectroscopy (EDX), Electron energy loss spectroscopy (EELS) and so on. SiTiO3 thin film, which is grown on Si (100) single crystals, attracts a lot of interest in its structural and electronic properties close to its interface. Valence EELS is used to investigate the Plasmon excitations of the ultrathin SrTiO3 thin film which is sandwiched between amorphous Si and crystalline Si layers. On the other hand, theoretical simulations based on dielectric functions have been done to interpret the experimental results. Our findings demonstrate the value of valence electron energy-loss spectroscopy in detecting a local change in the effective electron mass. Recently it is reported that ZnO-LiYbO2 hybrid phosphor is an efficient UV-infrared convertor for silicon solar cell but the mechanism is still not very clear. The microstructure of Li and Yb co-doped ZnO has been studied by SEM and EDX, and our results suggest that a reaction (or diffusion) zone is very likely to exist between LiYbO2 and ZnO. Such diffusion regions may be responsible for the enhanced infrared emission in the Yb and Li co-doped ZnO. Furthermore, to help us study the diffusion zone under TEM in future, the radiation damage on synthesized LiYbO2 has been studied at first, and then the electronic structure of the synthesized LiYbO2 is compared with Yb2O3 experimentally and theoretically, by EELS and FEFF8 respectively.
ContributorsYang, Bo (Author) / Alford, Terry (Thesis advisor) / Jiang, Nan (Committee member) / Theodore, N. David (Committee member) / Arizona State University (Publisher)
Created2013
Description
Organic optoelectronic devices have remained a research topic of great interest over the past two decades, particularly in the development of efficient organic photovoltaics (OPV) and organic light emitting diodes (OLED). In order to improve the efficiency, stability, and materials variety for organic optoelectronic devices a number of emitting materials, absorbing materials, and charge transport materials were developed and employed in a device setting. Optical, electrical, and photophysical studies of the organic materials and their corresponding devices were thoroughly carried out. Two major approaches were taken to enhance the efficiency of small molecule based OPVs: developing material with higher open circuit voltages or improved device structures which increased short circuit current. To explore the factors affecting the open circuit voltage (VOC) in OPVs, molecular structures were modified to bring VOC closer to the effective bandgap, ∆EDA, which allowed the achievement of 1V VOC for a heterojunction of a select Ir complex with estimated exciton energy of only 1.55eV. Furthermore, the development of anode interfacial layer for exciton blocking and molecular templating provide a general approach for enhancing the short circuit current. Ultimately, a 5.8% PCE was achieved in a single heterojunction of C60 and a ZnPc material prepared in a simple, one step, solvent free, synthesis. OLEDs employing newly developed deep blue emitters based on cyclometalated complexes were demonstrated. Ultimately, a peak EQE of 24.8% and nearly perfect blue emission of (0.148,0.079) was achieved from PtON7dtb, which approaches the maximum attainable performance from a blue OLED. Furthermore, utilizing the excimer formation properties of square-planar Pt complexes, highly efficient and stable white devices employing a single emissive material were demonstrated. A peak EQE of over 20% for pure white color (0.33,0.33) and 80 CRI was achieved with the tridentate Pt complex, Pt-16. Furthermore, the development of a series of tetradentate Pt complexes yielded highly efficient and stable single doped white devices due to their halogen free tetradentate design. In addition to these benchmark achievements, the systematic molecular modification of both emissive and absorbing materials provides valuable structure-property relationship information that should help guide further developments in the field.
ContributorsFleetham, Tyler Blain (Author) / Li, Jian (Thesis advisor) / Alford, Terry (Committee member) / Adams, James (Committee member) / Arizona State University (Publisher)
Created2014
Description
Organic light emitting diodes (OLEDs) are a promising approach for display and solid state lighting applications. However, further work is needed in establishing the availability of efficient and stable materials for OLEDs with high external quantum efficiency's (EQE) and high operational lifetimes. Recently, significant improvements in the internal quantum efficiency or ratio of generated photons to injected electrons have been achieved with the advent of phosphorescent complexes with the ability to harvest both singlet and triplet excitons. Since then, a variety of phosphorescent complexes containing heavy metal centers including Os, Ni, Ir, Pd, and Pt have been developed. Thus far, the majority of the work in the field has focused on iridium based complexes. Platinum based complexes, however, have received considerably less attention despite demonstrating efficiency's equal to or better than their iridium analogs. In this study, a series of OLEDs implementing newly developed platinum based complexes were demonstrated with efficiency's or operational lifetimes equal to or better than their iridium analogs for select cases.
In addition to demonstrating excellent device performance in OLEDs, platinum based complexes exhibit unique photophysical properties including the ability to form excimer emission capable of generating broad white light emission from a single emitter and the ability to form narrow band emission from a rigid, tetradentate molecular structure for select cases. These unique photophysical properties were exploited and their optical and electrical properties in a device setting were elucidated.
Utilizing the unique properties of a tridentate Pt complex, Pt-16, a highly efficient white device employing a single emissive layer exhibited a peak EQE of over 20% and high color quality with a CRI of 80 and color coordinates CIE(x=0.33, y=0.33). Furthermore, by employing a rigid, tetradentate platinum complex, PtN1N, with a narrow band emission into a microcavity organic light emitting diode (MOLED), significant enhancement in the external quantum efficiency was achieved. The optimized MOLED structure achieved a light out-coupling enhancement of 1.35 compared to the non-cavity structure with a peak EQE of 34.2%. In addition to demonstrating a high light out-coupling enhancement, the microcavity effect of a narrow band emitter in a MOLED was elucidated.
In addition to demonstrating excellent device performance in OLEDs, platinum based complexes exhibit unique photophysical properties including the ability to form excimer emission capable of generating broad white light emission from a single emitter and the ability to form narrow band emission from a rigid, tetradentate molecular structure for select cases. These unique photophysical properties were exploited and their optical and electrical properties in a device setting were elucidated.
Utilizing the unique properties of a tridentate Pt complex, Pt-16, a highly efficient white device employing a single emissive layer exhibited a peak EQE of over 20% and high color quality with a CRI of 80 and color coordinates CIE(x=0.33, y=0.33). Furthermore, by employing a rigid, tetradentate platinum complex, PtN1N, with a narrow band emission into a microcavity organic light emitting diode (MOLED), significant enhancement in the external quantum efficiency was achieved. The optimized MOLED structure achieved a light out-coupling enhancement of 1.35 compared to the non-cavity structure with a peak EQE of 34.2%. In addition to demonstrating a high light out-coupling enhancement, the microcavity effect of a narrow band emitter in a MOLED was elucidated.
ContributorsEcton, Jeremy David (Author) / Li, Jian (Thesis advisor) / Adams, James (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2014
Description
Organic light emitting diodes (OLEDs) is a rapidly emerging technology based on organic thin film semiconductors. Recently, there has been substantial investment in their use in displays. In less than a decade, OLEDs have grown from a promising academic curiosity into a multi-billion dollar global industry. At the heart of an OLED are emissive molecules that generate light in response to electrical stimulation. Ideal emitters are efficient, compatible with existing materials, long lived, and produce light predominantly at useful wavelengths. Developing an understanding of the photophysical processes that dictate the luminescent properties of emissive materials is vital to their continued development. Chapter 1 and Chapter 2 provide an introduction to the topics presented and the laboratory methods used to explore them. Chapter 3 discusses a series of tridentate platinum complexes. A synthetic method utilizing microwave irradiation was explored, as well as a study of the effects ligand structure had on the excited state properties. Results and techniques developed in this endeavor were used as a foundation for the work undertaken in later chapters. Chapter 4 introduces a series of tetradentate platinum complexes that share a phenoxy-pyridyl (popy) motif. The new molecular design improved efficiency through increased rigidity and modification of the excited state properties. This class of platinum complexes were markedly more efficient than those presented in Chapter 3, and devices employing a green emitting complex of the series achieved nearly 100% electron-to-photon conversion efficiency in an OLED device. Chapter 5 adapts the ligand structure developed in Chapter 4 to palladium. The resulting complexes exceed reported efficiencies of palladium complexes by an order of magnitude. This chapter also provides the first report of a palladium complex as an emitter in an OLED device. Chapter 6 discusses the continuation of development efforts to include carbazolyl components in the ligand. These complexes possess interesting luminescent properties including ultra-narrow emission and metal assisted delayed fluorescence (MADF) emission.
ContributorsTurner, Eric (Author) / Li, Jian (Thesis advisor) / Adams, James (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2014
Description
For decades, microelectronics manufacturing has been concerned with failures related to electromigration phenomena in conductors experiencing high current densities. The influence of interconnect microstructure on device failures related to electromigration in BGA and flip chip solder interconnects has become a significant interest with reduced individual solder interconnect volumes. A survey indicates that x-ray computed micro-tomography (µXCT) is an emerging, novel means for characterizing the microstructures' role in governing electromigration failures. This work details the design and construction of a lab-scale µXCT system to characterize electromigration in the Sn-0.7Cu lead-free solder system by leveraging in situ imaging.
In order to enhance the attenuation contrast observed in multi-phase material systems, a modeling approach has been developed to predict settings for the controllable imaging parameters which yield relatively high detection rates over the range of x-ray energies for which maximum attenuation contrast is expected in the polychromatic x-ray imaging system. In order to develop this predictive tool, a model has been constructed for the Bremsstrahlung spectrum of an x-ray tube, and calculations for the detector's efficiency over the relevant range of x-ray energies have been made, and the product of emitted and detected spectra has been used to calculate the effective x-ray imaging spectrum. An approach has also been established for filtering `zinger' noise in x-ray radiographs, which has proven problematic at high x-ray energies used for solder imaging. The performance of this filter has been compared with a known existing method and the results indicate a significant increase in the accuracy of zinger filtered radiographs.
The obtained results indicate the conception of a powerful means for the study of failure causing processes in solder systems used as interconnects in microelectronic packaging devices. These results include the volumetric quantification of parameters which are indicative of both electromigration tolerance of solders and the dominant mechanisms for atomic migration in response to current stressing. This work is aimed to further the community's understanding of failure-causing electromigration processes in industrially relevant material systems for microelectronic interconnect applications and to advance the capability of available characterization techniques for their interrogation.
In order to enhance the attenuation contrast observed in multi-phase material systems, a modeling approach has been developed to predict settings for the controllable imaging parameters which yield relatively high detection rates over the range of x-ray energies for which maximum attenuation contrast is expected in the polychromatic x-ray imaging system. In order to develop this predictive tool, a model has been constructed for the Bremsstrahlung spectrum of an x-ray tube, and calculations for the detector's efficiency over the relevant range of x-ray energies have been made, and the product of emitted and detected spectra has been used to calculate the effective x-ray imaging spectrum. An approach has also been established for filtering `zinger' noise in x-ray radiographs, which has proven problematic at high x-ray energies used for solder imaging. The performance of this filter has been compared with a known existing method and the results indicate a significant increase in the accuracy of zinger filtered radiographs.
The obtained results indicate the conception of a powerful means for the study of failure causing processes in solder systems used as interconnects in microelectronic packaging devices. These results include the volumetric quantification of parameters which are indicative of both electromigration tolerance of solders and the dominant mechanisms for atomic migration in response to current stressing. This work is aimed to further the community's understanding of failure-causing electromigration processes in industrially relevant material systems for microelectronic interconnect applications and to advance the capability of available characterization techniques for their interrogation.
ContributorsMertens, James Charles Edwin (Author) / Chawla, Nikhilesh (Thesis advisor) / Alford, Terry (Committee member) / Jiao, Yang (Committee member) / Neithalath, Narayanan (Committee member) / Arizona State University (Publisher)
Created2015
Description
In this thesis, a novel silica nanosphere (SNS) lithography technique has been developed to offer a fast, cost-effective, and large area applicable nano-lithography approach. The SNS can be easily deposited with a simple spin-coating process after introducing a N,N-dimethyl-formamide (DMF) solvent which can produce a highly close packed SNS monolayer over large silicon (Si) surface area, since DMF offers greatly improved wetting, capillary and convective forces in addition to slow solvent evaporation rate. Since the period and dimension of the surface pattern can be conveniently changed and controlled by introducing a desired size of SNS, and additional SNS size reduction with dry etching process, using SNS for lithography provides a highly effective nano-lithography approach for periodically arrayed nano-/micro-scale surface patterns with a desired dimension and period. Various Si nanostructures (i.e., nanopillar, nanotip, inverted pyramid, nanohole) are successfully fabricated with the SNS nano-lithography technique by using different etching technique like anisotropic alkaline solution (i.e., KOH) etching, reactive-ion etching (RIE), and metal-assisted chemical etching (MaCE).
In this research, computational optical modeling is also introduced to design the Si nanostructure, specifically nanopillars (NPs) with a desired period and dimension. The optical properties of Si NP are calculated with two different optical modeling techniques, which are the rigorous coupled wave analysis (RCWA) and finite-difference time-domain (FDTD) methods. By using these two different optical modeling techniques, the optical properties of Si NPs with different periods and dimensions have been investigated to design ideal Si NP which can be potentially used for thin c-Si solar cell applications. From the results of the computational and experimental work, it was observed that low aspect ratio Si NPs fabricated in a periodic hexagonal array can provide highly enhanced light absorption for the target spectral range (600 ~ 1100nm), which is attributed to (1) the effective confinement of resonant scattering within the Si NP and (2) increased high order diffraction of transmitted light providing an extended absorption length. From the research, therefore, it is successfully demonstrated that the nano-fabrication process with SNS lithography can offer enhanced lithographical accuracy to fabricate desired Si nanostructures which can realize enhanced light absorption for thin Si solar cell.
In this research, computational optical modeling is also introduced to design the Si nanostructure, specifically nanopillars (NPs) with a desired period and dimension. The optical properties of Si NP are calculated with two different optical modeling techniques, which are the rigorous coupled wave analysis (RCWA) and finite-difference time-domain (FDTD) methods. By using these two different optical modeling techniques, the optical properties of Si NPs with different periods and dimensions have been investigated to design ideal Si NP which can be potentially used for thin c-Si solar cell applications. From the results of the computational and experimental work, it was observed that low aspect ratio Si NPs fabricated in a periodic hexagonal array can provide highly enhanced light absorption for the target spectral range (600 ~ 1100nm), which is attributed to (1) the effective confinement of resonant scattering within the Si NP and (2) increased high order diffraction of transmitted light providing an extended absorption length. From the research, therefore, it is successfully demonstrated that the nano-fabrication process with SNS lithography can offer enhanced lithographical accuracy to fabricate desired Si nanostructures which can realize enhanced light absorption for thin Si solar cell.
ContributorsChoi, JeaYoung (Author) / Honsberg, Christiana (Thesis advisor) / Alford, Terry (Thesis advisor) / Goodnick, Stephen (Committee member) / Arizona State University (Publisher)
Created2015
Description
There has been recent interest in demonstrating solar cells which approach the detailed-balance or thermodynamic efficiency limit in order to establish a model system for which mass-produced solar cells can be designed. Polycrystalline CdS/CdTe heterostructures are currently one of many competing solar cell material systems. Despite being polycrystalline, efficiencies up to 21 % have been demonstrated by the company First Solar. However, this efficiency is still far from the detailed-balance limit of 32.1 % for CdTe. This work explores the use of monocrystalline CdTe/MgCdTe and ZnTe/CdTe/MgCdTe double heterostructures (DHs) grown on (001) InSb substrates by molecular beam epitaxy (MBE) for photovoltaic applications.
Undoped CdTe/MgCdTe DHs are first grown in order to determine the material quality of the CdTe epilayer and to optimize the growth conditions. DH samples show strong photoluminescence with over double the intensity as that of a GaAs/AlGaAs DH with an identical layer structure. Time-resolved photoluminescence of the CdTe/MgCdTe DH gives a carrier lifetime of up to 179 ns for a 2 µm thick CdTe layer, which is more than one order of magnitude longer than that of polycrystalline CdTe films. MgCdTe barrier layers are found to be effective at confining photogenerated carriers and have a relatively low interface recombination velocity of 461 cm/s. The optimal growth temperature and Cd/Te flux ratio is determined to be 265 °C and 1.5, respectively.
Monocrystalline ZnTe/CdTe/MgCdTe P-n-N DH solar cells are designed, grown, processed into solar cell devices, and characterized. A maximum efficiency of 6.11 % is demonstrated for samples without an anti-reflection coating. The low efficiency is mainly due to the low open-circuit voltage (Voc), which is attributed to high dark current caused by interface recombination at the ZnTe/CdTe interface. Low-temperature measurements show a linear increase in Voc with decreasing temperature down to 77 K, which suggests that the room-temperature operation is limited by non-radiative recombination. An open-circuit voltage of 1.22 V and an efficiency of 8.46 % is demonstrated at 77 K. It is expected that a coherently strained MgCdTe/CdTe/MgCdTe DH solar cell design will produce higher efficiency and Voc compared to the ZnTe/CdTe/MgCdTe design with relaxed ZnTe layer.
Undoped CdTe/MgCdTe DHs are first grown in order to determine the material quality of the CdTe epilayer and to optimize the growth conditions. DH samples show strong photoluminescence with over double the intensity as that of a GaAs/AlGaAs DH with an identical layer structure. Time-resolved photoluminescence of the CdTe/MgCdTe DH gives a carrier lifetime of up to 179 ns for a 2 µm thick CdTe layer, which is more than one order of magnitude longer than that of polycrystalline CdTe films. MgCdTe barrier layers are found to be effective at confining photogenerated carriers and have a relatively low interface recombination velocity of 461 cm/s. The optimal growth temperature and Cd/Te flux ratio is determined to be 265 °C and 1.5, respectively.
Monocrystalline ZnTe/CdTe/MgCdTe P-n-N DH solar cells are designed, grown, processed into solar cell devices, and characterized. A maximum efficiency of 6.11 % is demonstrated for samples without an anti-reflection coating. The low efficiency is mainly due to the low open-circuit voltage (Voc), which is attributed to high dark current caused by interface recombination at the ZnTe/CdTe interface. Low-temperature measurements show a linear increase in Voc with decreasing temperature down to 77 K, which suggests that the room-temperature operation is limited by non-radiative recombination. An open-circuit voltage of 1.22 V and an efficiency of 8.46 % is demonstrated at 77 K. It is expected that a coherently strained MgCdTe/CdTe/MgCdTe DH solar cell design will produce higher efficiency and Voc compared to the ZnTe/CdTe/MgCdTe design with relaxed ZnTe layer.
ContributorsDiNezza, Michael John (Author) / Zhang, Yong-Hang (Thesis advisor) / Johnson, Shane (Committee member) / Tao, Meng (Committee member) / Holman, Zachary (Committee member) / Arizona State University (Publisher)
Created2014