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- Genre: Academic theses
- Creators: Phelan, Patrick
- Creators: Yu, Hongbin
Description
In this work, a highly sensitive strain sensing technique is developed to realize in-plane strain mapping for microelectronic packages or emerging flexible or foldable devices, where mechanical or thermal strain is a major concern that could affect the performance of the working devices or even lead to the failure of the devices. Therefore strain sensing techniques to create a contour of the strain distribution is desired.
The developed highly sensitive micro-strain sensing technique differs from the existing strain mapping techniques, such as digital image correlation (DIC)/micro-Moiré techniques, in terms of working mechanism, by filling a technology gap that requires high spatial resolution while simultaneously maintaining a large field-of-view. The strain sensing mechanism relies on the scanning of a tightly focused laser beam onto the grating that is on the sample surface to detect the change in the diffracted beam angle as a result of the strain. Gratings are fabricated on the target substrates to serve as strain sensors, which carries the strain information in the form of variations in the grating period. The geometric structure of the optical system inherently ensures the high sensitivity for the strain sensing, where the nanoscale change of the grating period is amplified by almost six orders into a diffraction peak shift on the order of several hundred micrometers. It significantly amplifies the small signal measurements so that the desired sensitivity and accuracy can be achieved.
The important features, such as strain sensitivity and spatial resolution, for the strain sensing technique are investigated to evaluate the technique. The strain sensitivity has been validated by measurements on homogenous materials with well known reference values of CTE (coefficient of thermal expansion). 10 micro-strain has been successfully resolved from the silicon CTE extraction measurements. Furthermore, the spatial resolution has been studied on predefined grating patterns, which are assembled to mimic the uneven strain distribution across the sample surface. A resolvable feature size of 10 µm has been achieved with an incident laser spot size of 50 µm in diameter.
In addition, the strain sensing technique has been applied to a composite sample made of SU8 and silicon, as well as the microelectronic packages for thermal strain mappings.
The developed highly sensitive micro-strain sensing technique differs from the existing strain mapping techniques, such as digital image correlation (DIC)/micro-Moiré techniques, in terms of working mechanism, by filling a technology gap that requires high spatial resolution while simultaneously maintaining a large field-of-view. The strain sensing mechanism relies on the scanning of a tightly focused laser beam onto the grating that is on the sample surface to detect the change in the diffracted beam angle as a result of the strain. Gratings are fabricated on the target substrates to serve as strain sensors, which carries the strain information in the form of variations in the grating period. The geometric structure of the optical system inherently ensures the high sensitivity for the strain sensing, where the nanoscale change of the grating period is amplified by almost six orders into a diffraction peak shift on the order of several hundred micrometers. It significantly amplifies the small signal measurements so that the desired sensitivity and accuracy can be achieved.
The important features, such as strain sensitivity and spatial resolution, for the strain sensing technique are investigated to evaluate the technique. The strain sensitivity has been validated by measurements on homogenous materials with well known reference values of CTE (coefficient of thermal expansion). 10 micro-strain has been successfully resolved from the silicon CTE extraction measurements. Furthermore, the spatial resolution has been studied on predefined grating patterns, which are assembled to mimic the uneven strain distribution across the sample surface. A resolvable feature size of 10 µm has been achieved with an incident laser spot size of 50 µm in diameter.
In addition, the strain sensing technique has been applied to a composite sample made of SU8 and silicon, as well as the microelectronic packages for thermal strain mappings.
ContributorsLiang, Hanshuang (Author) / Yu, Hongbin (Thesis advisor) / Poon, Poh Chieh Benny (Committee member) / Jiang, Hanqing (Committee member) / Zhang, Yong-Hang (Committee member) / Arizona State University (Publisher)
Created2014
Description
As one of the most promising materials for high capacity electrode in next generation of lithium ion batteries, silicon has attracted a great deal of attention in recent years. Advanced characterization techniques and atomic simulations helped to depict that the lithiation/delithiation of silicon electrode involves processes including large volume change (anisotropic for the initial lithiation of crystal silicon), plastic flow or softening of material dependent on composition, electrochemically driven phase transformation between solid states, anisotropic or isotropic migration of atomic sharp interface, and mass diffusion of lithium atoms. Motivated by the promising prospect of the application and underlying interesting physics, mechanics coupled with multi-physics of silicon electrodes in lithium ion batteries is studied in this dissertation. For silicon electrodes with large size, diffusion controlled kinetics is assumed, and the coupled large deformation and mass transportation is studied. For crystal silicon with small size, interface controlled kinetics is assumed, and anisotropic interface reaction is studied, with a geometry design principle proposed. As a preliminary experimental validation, enhanced lithiation and fracture behavior of silicon pillars via atomic layer coatings and geometry design is studied, with results supporting the geometry design principle we proposed based on our simulations. Through the work documented here, a consistent description and understanding of the behavior of silicon electrode is given at continuum level and some insights for the future development of the silicon electrode are provided.
ContributorsAn, Yonghao (Author) / Jiang, Hanqing (Thesis advisor) / Chawla, Nikhilesh (Committee member) / Phelan, Patrick (Committee member) / Wang, Yinming (Committee member) / Yu, Hongyu (Committee member) / Arizona State University (Publisher)
Created2014
Description
Semiconductor devices are generally analyzed with relatively simple equations or with detailed computer simulations. Most text-books use these simple equations and show device diagrams that are frequently very simplified and occasionally incorrect. For example, the carrier densities near the pinch-off point in MOSFETs and JFETs and the minority carrier density in the base near the reverse-biased base-collector junction are frequently assumed to be zero or near zero. Also the channel thickness at the pinch-off point is often shown to approach zero. None of these assumptions can be correct. The research in thesis addresses these points. I simulated the carrier densities, potentials, electric fields etc. of MOSFETs, BJTs and JFETs at and near the pinch-off regions to determine exactly what happens there. I also simulated the behavior of the quasi-Fermi levels. For MOSFETs, the channel thickness expands slightly before the pinch-off point and then spreads out quickly in a triangular shape and the space-charge region under the channel actually shrinks as the potential increases from source to drain. For BJTs, with collector-base junction reverse biased, most minority carriers diffuse through the base from emitter to collector very fast, but the minority carrier concentration at the collector-base space-charge region is not zero. For JFETs, the boundaries of the space-charge region are difficult to determine, the channel does not disappear after pinch off, the shape of channel is always tapered, and the carrier concentration in the channel decreases progressively. After simulating traditional sized devices, I also simulated typical nano-scaled devices and show that they behave similarly to large devices. These simulation results provide a more complete understanding of device physics and device operation in those regions usually not addressed in semiconductor device physics books.
ContributorsYang, Xuan (Author) / Schroder, Dieter K. (Thesis advisor) / Vasileska, Dragica (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2011
Description
As the demand for power increases in populated areas, so will the demand for water. Current power plant technology relies heavily on the Rankine cycle in coal, nuclear and solar thermal power systems which ultimately use condensers to cool the steam in the system. In dry climates, the amount of water to cool off the condenser can be extremely large. Current wet cooling technologies such as cooling towers lose water from evaporation. One alternative to prevent this would be to implement a radiative cooling system. More specifically, a system that utilizes the volumetric radiation emission from water to the night sky could be implemented. This thesis analyzes the validity of a radiative cooling system that uses direct radiant emission to cool water. A brief study on potential infrared transparent cover materials such as polyethylene (PE) and polyvinyl carbonate (PVC) was performed. Also, two different experiments to determine the cooling power from radiation were developed and run. The results showed a minimum cooling power of 33.7 W/m2 for a vacuum insulated glass system and 37.57 W/m2 for a tray system with a maximum of 98.61 Wm-2 at a point when conduction and convection heat fluxes were considered to be zero. The results also showed that PE proved to be the best cover material. The minimum numerical results compared well with other studies performed in the field using similar techniques and materials. The results show that a radiative cooling system for a power plant could be feasible given that the cover material selection is narrowed down, an ample amount of land is available and an economic analysis is performed proving it to be cost competitive with conventional systems.
ContributorsOvermann, William (Author) / Phelan, Patrick (Thesis advisor) / Trimble, Steve (Committee member) / Taylor, Robert (Committee member) / Arizona State University (Publisher)
Created2011
Description
In this thesis the performance of a Hybrid AC System (HACS) is modeled and optimized. The HACS utilizes solar photovoltaic (PV) panels to help reduce the demand from the utility during peak hours. The system also includes an ice Thermal Energy Storage (TES) tank to accumulate cooling energy during off-peak hours. The AC runs continuously on grid power during off-peak hours to generate cooling for the house and to store thermal energy in the TES. During peak hours, the AC runs on the power supplied from the PV, and cools the house along with the energy stored in the TES. A higher initial cost is expected due to the additional components of the HACS (PV and TES), but a lower operational cost due to higher energy efficiency, energy storage and renewable energy utilization. A house cooled by the HACS will require a smaller size AC unit (about 48% less in the rated capacity), compared to a conventional AC system. To compare the cost effectiveness of the HACS with a regular AC system, time-of-use (TOU) utility rates are considered, as well as the cost of the system components and the annual maintenance. The model shows that the HACS pays back its initial cost of $28k in about 6 years with an 8% APR, and saves about $45k in total cost when compared to a regular AC system that cools the same house for the same period of 6 years.
ContributorsJubran, Sadiq (Author) / Phelan, Patrick (Thesis advisor) / Calhoun, Ronald (Committee member) / Trimble, Steve (Committee member) / Arizona State University (Publisher)
Created2011
Description
A low cost expander, combustor device that takes compressed air, adds thermal energy and then expands the gas to drive an electrical generator is to be designed by modifying an existing reciprocating spark ignition engine. The engine used is the 6.5 hp Briggs and Stratton series 122600 engine. Compressed air that is stored in a tank at a particular pressure will be introduced during the compression stage of the engine cycle to reduce pump work. In the modified design the intake and exhaust valve timings are modified to achieve this process. The time required to fill the combustion chamber with compressed air to the storage pressure immediately before spark and the state of the air with respect to crank angle is modeled numerically using a crank step energy and mass balance model. The results are used to complete the engine cycle analysis based on air standard assumptions and air to fuel ratio of 15 for gasoline. It is found that at the baseline storage conditions (280 psi, 70OF) the modified engine does not meet the imposed constraints of staying below the maximum pressure of the unmodified engine. A new storage pressure of 235 psi is recommended. This only provides a 7.7% increase in thermal efficiency for the same work output. The modification of this engine for this low efficiency gain is not recommended.
ContributorsJoy, Lijin (Author) / Trimble, Steve (Thesis advisor) / Davidson, Joseph (Committee member) / Phelan, Patrick (Committee member) / Arizona State University (Publisher)
Created2011
Description
Semiconductor nanowires are featured by their unique one-dimensional structure which makes them promising for small scale electronic and photonic device applications. Among them, III-V material nanowires are particularly outstanding due to their good electronic properties. In bulk, these materials reveal electron mobility much higher than conventional silicon based devices, for example at room temperature, InAs field effect transistor (FET) has electron mobility of 40,000 cm2/Vs more than 10 times of Si FET. This makes such materials promising for high speed nanowire FETs. With small bandgap, such as 0.354 eV for InAs and 1.52 eV for GaAs, it does not need high voltage to turn on such devices which leads to low power consumption devices. Another feature of direct bandgap allows their applications of optoelectronic devices such as avalanche photodiodes. However, there are challenges to face up. Due to their large surface to volume ratio, nanowire devices typically are strongly affected by the surface states. Although nanowires can be grown into single crystal structure, people observe crystal defects along the wires which can significantly affect the performance of devices. In this work, FETs made of two types of III-V nanowire, GaAs and InAs, are demonstrated. These nanowires are grown by catalyst-free MOCVD growth method. Vertically nanowires are transferred onto patterned substrates for coordinate calibration. Then electrodes are defined by e-beam lithography followed by deposition of contact metals. Prior to metal deposition, however, the substrates are dipped in ammonium hydroxide solution to remove native oxide layer formed on nanowire surface. Current vs. source-drain voltage with different gate bias are measured at room temperature. GaAs nanowire FETs show photo response while InAs nanowire FETs do not show that. Surface passivation is performed on GaAs FETs by using ammonium surfide solution. The best results on current increase is observed with around 20-30 minutes chemical treatment time. Gate response measurements are performed at room temperature, from which field effect mobility as high as 1490 cm2/Vs is extracted for InAs FETs. One major contributor for this is stacking faults defect existing along nanowires. For InAs FETs, thermal excitations observed from temperature dependent results which leads us to investigate potential barriers.
ContributorsLiang, Hanshuang (Author) / Yu, Hongbin (Thesis advisor) / Ferry, David (Committee member) / Tracy, Clarence (Committee member) / Arizona State University (Publisher)
Created2011
Description
Processed pyro-gel contains castor oil with solid component of boehmite (Al-OOH). The pyro-gel is synthesized by heat to convert boehmite to gamma-Al2O3 and to a certain extent alpha-Al2O3 nano-particles and castor oil into carbon residue. The effect of heat on pyro-gel is analyzed in a series of experiments using two burning chambers with the initial temperature as the main factor. The obtained temperature distribution profiles are studied and it is observed that the gel behaves very close to the theoretical prediction under heat. The carbon residue with Al2O3 is then processed for twelve hours and then analyzed to obtain the pore distribution of the Al2O3 nano-particles and the relation between the pore volume and the pre-heat temperature is analyzed. The obtained pore distribution shows the pore volume of Al2O3 nano-particles has direct relation to the pre-heat temperature. The experimental process involving the cylindrical reactor is simulated by using a finite rate chemistry eddy-dissipation model in a non-premixed and a porous mesh. The temperature distribution profile of the processed gel for both the meshes is obtained and a comparison is done with the data obtained in the experimental analysis. The temperature distribution obtained from the simulations show they follow a very similar profile to the temperature distribution obtained from experimental analysis, thus confirming the accuracy of both the models. The variation in numerical values between the experimental and simulation analysis is discussed. A physical model is proposed to determine the pore formation based on the temperature distribution obtained from experimental analysis and simulation.
ContributorsSagi, Varun (Author) / Lee, Taewoo (Thesis advisor) / Phelan, Patrick (Committee member) / Chen, Kangping (Committee member) / Arizona State University (Publisher)
Created2010
Description
Semiconductor nanowires (NWs) are one dimensional materials and have size quantization effect when the diameter is sufficiently small. They can serve as optical wave guides along the length direction and contain optically active gain at the same time. Due to these unique properties, NWs are now very promising and extensively studied for nanoscale optoelectronic applications. A systematic and comprehensive optical and microstructural study of several important infrared semiconductor NWs is presented in this thesis, which includes InAs, PbS, InGaAs, erbium chloride silicate and erbium silicate. Micro-photoluminescence (PL) and transmission electron microscope (TEM) were utilized in conjunction to characterize the optical and microstructure of these wires. The focus of this thesis is on optical study of semiconductor NWs in the mid-infrared wavelengths. First, differently structured InAs NWs grown using various methods were characterized and compared. Three main PL peaks which are below, near and above InAs bandgap, respectively, were observed. The octadecylthiol self-assembled monolayer was employed to passivate the surface of InAs NWs to eliminate or reduce the effects of the surface states. The band-edge emission from wurtzite-structured NWs was completely recovered after passivatoin. The passivated NWs showed very good stability in air and under heat. In the second part, mid-infrared optical study was conducted on PbS wires of subwavelength diameter and lasing was demonstrated under optical pumping. The PbS wires were grown on Si substrate using chemical vapor deposition and have a rock-salt cubic structure. Single-mode lasing at the wavelength of ~3000-4000 nm was obtained from single as-grown PbS wire up to the temperature of 115 K. PL characterization was also utilized to demonstrate the highest crystallinity of the vertical arrays of InP and InGaAs/InP composition-graded heterostructure NWs made by a top-down fabrication method. TEM-related measurements were performed to study the crystal structures and elemental compositions of the Er-compound core-shell NWs. The core-shell NWs consist of an orthorhombic-structured erbium chloride silicate shell and a cubic-structured silicon core. These NWs provide unique Si-compatible materials with emission at 1530 nm for optical communications and solid state lasers.
ContributorsSun, Minghua (Author) / Ning, Cun-Zheng (Thesis advisor) / Yu, Hongbin (Committee member) / Carpenter, Ray W. (Committee member) / Johnson, Shane (Committee member) / Arizona State University (Publisher)
Created2011
Description
While much effort in Stirling engine development is placed on making the high-temperature region of the Stirling engine warmer, this research explores methods to lower the temperature of the cold region by improving heat transfer in the cooler. This paper presents heat transfer coefficients obtained for a Stirling engine heat exchanger with oscillatory flow. The effects of oscillating frequency and input heat rate on the heat transfer coefficients are evaluated and details on the design and development of the heat exchanger test apparatus are also explained. Featured results include the relationship between overall heat transfer coefficients and oscillation frequency which increase from 21.5 to 46.1 Wm-2K-1 as the oscillation frequency increases from 6.0 to 19.3 Hz. A correlation for the Nusselt number on the inside of the heat exchange tubes in oscillatory flow is presented in a concise, dimensionless form in terms of the kinetic Reynolds number as a result of a statistical analysis. The test apparatus design is proven to be successful throughout its implementation due to the usefulness of data and clear trends observed. The author is not aware of any other publicly-available research on a Stirling engine cooler to the extent presented in this paper. Therefore, the present results are analyzed on a part-by-part basis and compared to segments of other research; however, strong correlations with data from other studies are not expected. The data presented in this paper are part of a continuing effort to better understand heat transfer properties in Stirling engines as well as other oscillating flow applications.
ContributorsEppard, Erin (Author) / Phelan, Patrick (Thesis advisor) / Trimble, Steve (Committee member) / Calhoun, Ronald (Committee member) / Arizona State University (Publisher)
Created2011