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- All Subjects: Phosphides
- Creators: Allen, James P.
- Creators: Ranga, Praneeth
Description
The molecular modification of semiconductors has applications in energy
conversion and storage, including artificial photosynthesis. In nature, the active sites of
enzymes are typically earth-abundant metal centers and the protein provides a unique
three-dimensional environment for effecting catalytic transformations. Inspired by this
biological architecture, a synthetic methodology using surface-grafted polymers with
discrete chemical recognition sites for assembling human-engineered catalysts in three-dimensional
environments is presented. The use of polymeric coatings to interface cobalt-containing
catalysts with semiconductors for solar fuel production is introduced in
Chapter 1. The following three chapters demonstrate the versatility of this modular
approach to interface cobalt-containing catalysts with semiconductors for solar fuel
production. The catalyst-containing coatings are characterized through a suite of
spectroscopic techniques, including ellipsometry, grazing angle attenuated total reflection
Fourier transform infrared spectroscopy (GATR-FTIR) and x-ray photoelectron (XP)
spectroscopy. It is demonstrated that the polymeric interface can be varied to control the
surface chemistry and photoelectrochemical response of gallium phosphide (GaP) (100)
electrodes by using thin-film coatings comprising surface-immobilized pyridyl or
imidazole ligands to coordinate cobaloximes, known catalysts for hydrogen evolution.
The polymer grafting chemistry and subsequent cobaloxime attachment is applicable to
both the (111)A and (111)B crystal face of the gallium phosphide (GaP) semiconductor,
providing insights into the surface connectivity of the hard/soft matter interface and
demonstrating the applicability of the UV-induced immobilization of vinyl monomers to
a range of GaP crystal indices. Finally, thin-film polypyridine surface coatings provide a
molecular interface to assemble cobalt porphyrin catalysts for hydrogen evolution onto
GaP. In all constructs, photoelectrochemical measurements confirm the hybrid
photocathode uses solar energy to power reductive fuel-forming transformations in
aqueous solutions without the use of organic acids, sacrificial chemical reductants, or
electrochemical forward biasing.
conversion and storage, including artificial photosynthesis. In nature, the active sites of
enzymes are typically earth-abundant metal centers and the protein provides a unique
three-dimensional environment for effecting catalytic transformations. Inspired by this
biological architecture, a synthetic methodology using surface-grafted polymers with
discrete chemical recognition sites for assembling human-engineered catalysts in three-dimensional
environments is presented. The use of polymeric coatings to interface cobalt-containing
catalysts with semiconductors for solar fuel production is introduced in
Chapter 1. The following three chapters demonstrate the versatility of this modular
approach to interface cobalt-containing catalysts with semiconductors for solar fuel
production. The catalyst-containing coatings are characterized through a suite of
spectroscopic techniques, including ellipsometry, grazing angle attenuated total reflection
Fourier transform infrared spectroscopy (GATR-FTIR) and x-ray photoelectron (XP)
spectroscopy. It is demonstrated that the polymeric interface can be varied to control the
surface chemistry and photoelectrochemical response of gallium phosphide (GaP) (100)
electrodes by using thin-film coatings comprising surface-immobilized pyridyl or
imidazole ligands to coordinate cobaloximes, known catalysts for hydrogen evolution.
The polymer grafting chemistry and subsequent cobaloxime attachment is applicable to
both the (111)A and (111)B crystal face of the gallium phosphide (GaP) semiconductor,
providing insights into the surface connectivity of the hard/soft matter interface and
demonstrating the applicability of the UV-induced immobilization of vinyl monomers to
a range of GaP crystal indices. Finally, thin-film polypyridine surface coatings provide a
molecular interface to assemble cobalt porphyrin catalysts for hydrogen evolution onto
GaP. In all constructs, photoelectrochemical measurements confirm the hybrid
photocathode uses solar energy to power reductive fuel-forming transformations in
aqueous solutions without the use of organic acids, sacrificial chemical reductants, or
electrochemical forward biasing.
ContributorsBeiler, Anna Mary (Author) / Moore, Gary F. (Thesis advisor) / Moore, Thomas A. (Thesis advisor) / Redding, Kevin E. (Committee member) / Allen, James P. (Committee member) / Arizona State University (Publisher)
Created2018
Description
Nanowires are 1D rod-like structures which are regarded as the basis for future technologies. III-V nanowires have attracted immense attention because of their stability, crystal quality and wide use. In this work, I focus on the growth and characterization of III-V semiconductor nanowires, in particular GaP, InP and InGaP alloys. These nanowires were grown using a hot wall CVD(Chemical Vapor Deposition) setup and are characterized using SEM (Scanning Electron Microscope), EDX (Energy Dispersive X-ray Spectroscopy) and PL (Photoluminescence) techniques.
In the first chapter, Indium Phosphide nanowires were grown using elemental sources (In and P powders). I consider the various kinds of InP morphologies grown using this method. The effect of source temperature on the stoichiometry and optical properties of nanowires is studied. Lasing behavior has been seen in InP nanostructures, showing superior material quality of InP.
InGaP alloy nanowires were grown using compound and elemental sources. Nanowires grown using compound sources have significant oxide incorporation and showed kinky morphology. Nanowires grown using elemental sources had no oxide and showed better optical quality. Also, these samples showed a tunable alloy composition across the entire substrate covering more than 50% of the InGaP alloy system. Integrated intensity showed that the bandgap of the nanowires changed from indirect to direct bandgap with increasing Indium composition. InGaP alloy nanowires were compared with Gallium Phosphide nanowires in terms of PL emission, using InGaP nanowires it is possible to grow nanowires free of defects and oxygen impurities, which are commonly encountered in GaP nanowires.
In the first chapter, Indium Phosphide nanowires were grown using elemental sources (In and P powders). I consider the various kinds of InP morphologies grown using this method. The effect of source temperature on the stoichiometry and optical properties of nanowires is studied. Lasing behavior has been seen in InP nanostructures, showing superior material quality of InP.
InGaP alloy nanowires were grown using compound and elemental sources. Nanowires grown using compound sources have significant oxide incorporation and showed kinky morphology. Nanowires grown using elemental sources had no oxide and showed better optical quality. Also, these samples showed a tunable alloy composition across the entire substrate covering more than 50% of the InGaP alloy system. Integrated intensity showed that the bandgap of the nanowires changed from indirect to direct bandgap with increasing Indium composition. InGaP alloy nanowires were compared with Gallium Phosphide nanowires in terms of PL emission, using InGaP nanowires it is possible to grow nanowires free of defects and oxygen impurities, which are commonly encountered in GaP nanowires.
ContributorsRanga, Praneeth (Author) / Ning, Cun-Zheng (Thesis advisor) / Palais, Joseph (Committee member) / Tao, Meng (Committee member) / Arizona State University (Publisher)
Created2016