Matching Items (19)
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- All Subjects: Power amplifiers
- All Subjects: Buck Converter
- Creators: Bakkaloglu, Bertan
Description
Distributed estimation uses many inexpensive sensors to compose an accurate estimate of a given parameter. It is frequently implemented using wireless sensor networks. There have been several studies on optimizing power allocation in wireless sensor networks used for distributed estimation, the vast majority of which assume linear radio-frequency amplifiers. Linear amplifiers are inherently inefficient, so in this dissertation nonlinear amplifiers are examined to gain efficiency while operating distributed sensor networks. This research presents a method to boost efficiency by operating the amplifiers in the nonlinear region of operation. Operating amplifiers nonlinearly presents new challenges. First, nonlinear amplifier characteristics change across manufacturing process variation, temperature, operating voltage, and aging. Secondly, the equations conventionally used for estimators and performance expectations in linear amplify-and-forward systems fail. To compensate for the first challenge, predistortion is utilized not to linearize amplifiers but rather to force them to fit a common nonlinear limiting amplifier model close to the inherent amplifier performance. This minimizes the power impact and the training requirements for predistortion. Second, new estimators are required that account for transmitter nonlinearity. This research derives analytically and confirms via simulation new estimators and performance expectation equations for use in nonlinear distributed estimation. An additional complication when operating nonlinear amplifiers in a wireless environment is the influence of varied and potentially unknown channel gains. The impact of these varied gains and both measurement and channel noise sources on estimation performance are analyzed in this paper. Techniques for minimizing the estimate variance are developed. It is shown that optimizing transmitter power allocation to minimize estimate variance for the most-compressed parameter measurement is equivalent to the problem for linear sensors. Finally, a method for operating distributed estimation in a multipath environment is presented that is capable of developing robust estimates for a wide range of Rician K-factors. This dissertation demonstrates that implementing distributed estimation using nonlinear sensors can boost system efficiency and is compatible with existing techniques from the literature for boosting efficiency at the system level via sensor power allocation. Nonlinear transmitters work best when channel gains are known and channel noise and receiver noise levels are low.
ContributorsSantucci, Robert (Author) / Spanias, Andreas (Thesis advisor) / Tepedelenlioðlu, Cihan (Committee member) / Bakkaloglu, Bertan (Committee member) / Tsakalis, Kostas (Committee member) / Arizona State University (Publisher)
Created2013
Description
Synchronous buck converters have become the obvious choice of design for high efficiency voltage down-conversion applications and find wide scale usage in today's IC industry. The use of digital control in synchronous buck converters is becoming increasingly popular because of its associated advantages over traditional analog counterparts in terms of design flexibility, reduced use of off-chip components, and better programmability to enable advanced controls. They also demonstrate better immunity to noise, enhances tolerance to the process, voltage and temperature (PVT) variations, low chip area and as a result low cost. It enables processing in digital domain requiring a need of analog-digital interfacing circuit viz. Analog to Digital Converter (ADC) and Digital to Analog Converter (DAC). A Digital to Pulse Width Modulator (DPWM) acts as time domain DAC required in the control loop to modulate the ON time of the Power-MOSFETs. The accuracy and efficiency of the DPWM creates the upper limit to the steady state voltage ripple of the DC - DC converter and efficiency in low load conditions. This thesis discusses the prevalent architectures for DPWM in switched mode DC - DC converters. The design of a Hybrid DPWM is presented. The DPWM is 9-bit accurate and is targeted for a Synchronous Buck Converter with a switching frequency of 1.0 MHz. The design supports low power mode(s) for the buck converter in the Pulse Frequency Modulation (PFM) mode as well as other fail-safe features. The design implementation is digital centric making it robust across PVT variations and portable to lower technology nodes. Key target of the design is to reduce design time. The design is tested across large Process (+/- 3σ), Voltage (1.8V +/- 10%) and Temperature (-55.0 °C to 125 °C) and is in the process of tape-out.
ContributorsKumar, Amit (Author) / Bakkaloglu, Bertan (Thesis advisor) / Song, Hongjiang (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2013
Description
Switch mode DC/DC converters are suited for battery powered applications, due to their high efficiency, which help in conserving the battery lifetime. Fixed Frequency PWM based converters, which are generally used for these applications offer good voltage regulation, low ripple and excellent efficiency at high load currents. However at light load currents, fixed frequency PWM converters suffer from poor efficiencies The PFM control offers higher efficiency at light loads at the cost of a higher ripple. The PWM has a poor efficiency at light loads but good voltage ripple characteristics, due to a high switching frequency. To get the best of both control modes, both loops are used together with the control switched from one loop to another based on the load current. Such architectures are referred to as hybrid converters. While transition from PFM to PWM loop can be made by estimating the average load current, transition from PFM to PWM requires voltage or peak current sensing. This theses implements a hysteretic PFM solution for a synchronous buck converter with external MOSFET's, to achieve efficiencies of about 80% at light loads. As the PFM loop operates independently of the PWM loop, a transition circuit for automatically transitioning from PFM to PWM is implemented. The transition circuit is implemented digitally without needing any external voltage or current sensing circuit.
ContributorsVivek, Parasuram (Author) / Bakkaloglu, Bertan (Thesis advisor) / Ogras, Umit Y. (Committee member) / Song, Hongjiang (Committee member) / Arizona State University (Publisher)
Created2014
Description
Sliding-Mode Control (SMC) has several benefits over traditional Proportional-Integral-Differential (PID) control in terms of fast transient response, robustness to parameter and component variations, and low sensitivity to loop disturbances. An All-Digital Sliding-Mode (ADSM) controlled DC-DC converter, utilizing single-bit oversampled frequency domain digitizers is proposed. In the proposed approach, feedback and reference digitizing Analog-to-Digital Converters (ADC) are based on a single-bit, first order Sigma-Delta frequency to digital converter, running at 32MHz over-sampling rate. The ADSM regulator achieves 1% settling time in less than 5uSec for a load variation of 600mA. The sliding-mode controller utilizes a high-bandwidth hysteretic differentiator and an integrator to perform the sliding control law in digital domain. The proposed approach overcomes the steady state error (or DC offset), and limits the switching frequency range, which are the two common problems associated with sliding-mode controllers. The IC is designed and fabricated on a 0.35um CMOS process occupying an active area of 2.72mm-squared. Measured peak efficiency is 83%.
ContributorsDashtestani, Ahmad (Author) / Bakkaloglu, Bertan (Thesis advisor) / Thornton, Trevor (Committee member) / Song, Hongjiang (Committee member) / Kiaei, Sayfe (Committee member) / Arizona State University (Publisher)
Created2013
Description
Digital to analog converters (DACs) find widespread use in communications equipment. Most commercially available DAC's which are intended to be used in transmitter applications come in a dual configuration for carrying the in phase (I) and quadrature (Q) data and feature on chip digital mixing. Digital mixing offers many benefits concerning I and Q matching but has one major drawback; the update rate of the DAC must be higher than the intermediate frequency (IF) which is most commonly a factor of 4. This drawback motivates the need for interpolation so that a low update rate can be used for components preceding the DACs. In this thesis the design of an interpolating DAC integrated circuit (IC) to be used in a transmitter application for generating a 100MHz IF is presented. Many of the transistor level implementations are provided. The tradeoffs in the design are analyzed and various options are discussed. This thesis provides a basic foundation for designing an IC of this nature and will give the reader insight into potential areas of further research. At the time of this writing the chip is in fabrication therefore this document does not contain test results.
ContributorsNixon, Cliff (Author) / Bakkaloglu, Bertan (Thesis advisor) / Arizona State University (Publisher)
Created2013
Description
High speed current-steering DACs with high linearity are needed in today's applications such as wired and wireless communications, instrumentation, radar, and other direct digital synthesis (DDS) applications. However, a trade-off exists between the speed and resolution of Nyquist rate current-steering DACs. As the resolution increases, more transistor area is required to meet matching requirements for optimal linearity and thus, the overall speed of the DAC is limited.
In this thesis work, a 12-bit current-steering DAC was designed with current sources scaled below the required matching size to decrease the area and increase the overall speed of the DAC. By scaling the current sources, however, errors due to random mismatch between current sources will arise and additional calibration hardware is necessary to ensure 12-bit linearity. This work presents how to implement a self-calibration DAC that works to fix amplitude errors while maintaining a lower overall area. Additionally, the DAC designed in this thesis investigates the implementation feasibility of a data-interleaved architecture. Data interleaving can increase the total bandwidth of the DACs by 2 with an increase in SQNR by an additional 3 dB.
The final results show that the calibration method can effectively improve the linearity of the DAC. The DAC is able to run up to 400 MSPS frequencies with a 75 dB SFDR performance and above 87 dB SFDR performance at update rates of 200 MSPS.
In this thesis work, a 12-bit current-steering DAC was designed with current sources scaled below the required matching size to decrease the area and increase the overall speed of the DAC. By scaling the current sources, however, errors due to random mismatch between current sources will arise and additional calibration hardware is necessary to ensure 12-bit linearity. This work presents how to implement a self-calibration DAC that works to fix amplitude errors while maintaining a lower overall area. Additionally, the DAC designed in this thesis investigates the implementation feasibility of a data-interleaved architecture. Data interleaving can increase the total bandwidth of the DACs by 2 with an increase in SQNR by an additional 3 dB.
The final results show that the calibration method can effectively improve the linearity of the DAC. The DAC is able to run up to 400 MSPS frequencies with a 75 dB SFDR performance and above 87 dB SFDR performance at update rates of 200 MSPS.
ContributorsJankunas, Benjamin (Author) / Bakkaloglu, Bertan (Thesis advisor) / Kitchen, Jennifer (Committee member) / Ozev, Sule (Committee member) / Arizona State University (Publisher)
Created2014
Description
The high cut-off frequency of deep sub-micron CMOS technologies has enabled the integration of radio frequency (RF) transceivers with digital circuits. However, the challenging point is the integration of RF power amplifiers, mainly due to the low breakdown voltage of CMOS transistors. Silicon-on-insulator (SOI) metal semiconductor field effect transistors (MESFETs) have been introduced to remedy the limited headroom concern in CMOS technologies. The MESFETs presented in this thesis have been fabricated on different SOI-CMOS processes without making any change to the standard fabrication steps and offer 2-30 times higher breakdown voltage than the MOSFETs on the same process. This thesis explains the design steps of high efficiency and wideband RF transmitters using the proposed SOI-CMOS compatible MESFETs. This task involves DC and RF characterization of MESFET devices, along with providing a compact Spice model for simulation purposes. This thesis presents the design of several SOI-MESFET RF power amplifiers operating at 433, 900 and 1800 MHz with ~40% bandwidth. Measurement results show a peak power added efficiency (PAE) of 55% and a peak output power of 22.5 dBm. The RF-PAs were designed to operate in Class-AB mode to minimize the linearity degradation. Class-AB power amplifiers lead to poor power added efficiency, especially when fed with signals with high peak to average power ratio (PAPR) such as wideband code division multiple access (W-CDMA). Polar transmitters have been introduced to improve the efficiency of RF-PAs at backed-off powers. A MESFET based envelope tracking (ET) polar transmitter was designed and measured. A low drop-out voltage regulator (LDO) was used as the supply modulator of this polar transmitter. MESFETs are depletion mode devices; therefore, they can be configured in a source follower configuration to have better stability and higher bandwidth that MOSFET based LDOs. Measurement results show 350 MHz bandwidth while driving a 10 pF capacitive load. A novel polar transmitter is introduced in this thesis to alleviate some of the limitations associated with polar transmitters. The proposed architecture uses the backgate terminal of a partially depleted transistor on SOI process, which relaxes the bandwidth and efficiency requirements of the envelope amplifier in a polar transmitter. The measurement results of the proposed transmitter demonstrate more than three times PAE improvement at 6-dB backed-off output power, compared to the traditional RF transmitters.
ContributorsGhajar, Mohammad Reza (Author) / Thornton, Trevor (Thesis advisor) / Aberle, James T., 1961- (Committee member) / Bakkaloglu, Bertan (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2012
Description
Semiconductor device scaling has kept up with Moore's law for the past decades and they have been scaling by a factor of half every one and half years. Every new generation of device technology opens up new opportunities and challenges and especially so for analog design. High speed and low gain is characteristic of these processes and hence a tradeoff that can enable to get back gain by trading speed is crucial. This thesis proposes a solution that increases the speed of sampling of a circuit by a factor of three while reducing the specifications on analog blocks and keeping the power nearly constant. The techniques are based on the switched capacitor technique called Correlated Level Shifting. A triple channel Cyclic ADC has been implemented, with each channel working at a sampling frequency of 3.33MS/s and a resolution of 14 bits. The specifications are compared with that based on a traditional architecture to show the superiority of the proposed technique.
ContributorsSivakumar, Balasubramanian (Author) / Farahani, Bahar Jalali (Thesis advisor) / Garrity, Douglas (Committee member) / Bakkaloglu, Bertan (Committee member) / Aberle, James T., 1961- (Committee member) / Arizona State University (Publisher)
Created2012
Description
The continuing advancement of modulation standards with newer generations of cellular technology, promises ever increasing data rate and bandwidth efficiency. However, these modulation schemes present high peak to average power ratio (PAPR) even after applying crest factor reduction. Being the most power-hungry component in the radio frequency (RF) transmitter, power amplifiers (PA) for infrastructure applications, need to operate efficiently at the presence of these high PAPR signals while maintaining reasonable linearity performance which could be improved by moderate digital pre-distortion (DPD) techniques. This strict requirement of operating efficiently at average power level while being capable of delivering the peak power, made the load modulated PAs such as Doherty PA, Outphasing PA, various Envelope Tracking PAs, Polar transmitters and most recently the load modulated balanced PA, the prime candidates for such application. However, due to its simpler architecture and ability to deliver RF power efficiently with good linearity performance has made Doherty PA (DPA) the most popular solution and has been deployed almost exclusively for wireless infrastructure application all over the world.
Although DPAs has been very successful at amplifying the high PAPR signals, most recent advancements in cellular technology has opted for higher PAPR based signals at wider bandwidth. This lead to increased research and development work to innovate advanced Doherty architectures which are more efficient at back-off (BO) power levels compared to traditional DPAs. In this dissertation, three such advanced Doherty architectures and/or techniques are proposed to achieve high efficiency at further BO power level compared to traditional architecture using symmetrical devices for carrier and peaking PAs. Gallium Nitride (GaN) based high-electron-mobility (HEMT) technology has been used to design and fabricate the DPAs to validate the proposed advanced techniques for higher efficiency with good linearity performance at BO power levels.
Although DPAs has been very successful at amplifying the high PAPR signals, most recent advancements in cellular technology has opted for higher PAPR based signals at wider bandwidth. This lead to increased research and development work to innovate advanced Doherty architectures which are more efficient at back-off (BO) power levels compared to traditional DPAs. In this dissertation, three such advanced Doherty architectures and/or techniques are proposed to achieve high efficiency at further BO power level compared to traditional architecture using symmetrical devices for carrier and peaking PAs. Gallium Nitride (GaN) based high-electron-mobility (HEMT) technology has been used to design and fabricate the DPAs to validate the proposed advanced techniques for higher efficiency with good linearity performance at BO power levels.
ContributorsRuhul Hasin, Muhammad (Author) / Kitchen, Jennifer (Thesis advisor) / Aberle, James T., 1961- (Committee member) / Bakkaloglu, Bertan (Committee member) / Kiaei, Sayfe (Committee member) / Arizona State University (Publisher)
Created2018
Description
There is an ever-increasing demand for higher bandwidth and data rate ensuing from exploding number of radio frequency integrated systems and devices. As stated in the Shannon-Hartley theorem, the maximum achievable data rate of a communication channel is linearly proportional to the system bandwidth. This is the main driving force behind pushing wireless systems towards millimeter-wave frequency range, where larger bandwidth is available at a higher carrier frequency. Observing the Moor’s law, highly scaled complementary metal–oxide–semiconductor (CMOS) technologies provide fast transistors with a high unity power gain frequency which enables operating at millimeter-wave frequency range. CMOS is the compelling choice for digital and signal processing modules which concurrently offers high computation speed, low power consumption, and mass integration at a high manufacturing yield. One of the main shortcomings of the sub-micron CMOS technologies is the low breakdown voltage of the transistors that limits the dynamic range of the radio frequency (RF) power blocks, especially with the power amplifiers. Low voltage swing restricts the achievable output power which translates into low signal to noise ratio and degraded linearity. Extensive research has been done on proposing new design and IC fabrication techniques with the goal of generating higher output power in CMOS technology. The prominent drawbacks of these solutions are an increased die area, higher cost per design, and lower overall efficiency due to lossy passive components. In this dissertation, CMOS compatible metal–semiconductor field-effect transistor (MESFETs) are utilized to put forward a new solution to enhance the power amplifier’s breakdown voltage, gain and maximum output power. Requiring no change to the conventional CMOS process flow, this low cost approach allows direct incorporation of high voltage power MESFETs into silicon. High voltage MESFETs were employed in a cascode structure to push the amplifier’s cutoff frequency and unity power gain frequency to the 5G and K-band frequency range. This dissertation begins with CMOS compatible MESFET modeling and fabrication steps, and culminates in the discussion of amplifier design and optimization methodology, parasitic de-embedding steps, simulation and measurement results, and high resistivity RF substrate characterization.
ContributorsHabibiMehr, Payam (Author) / Thornton, Trevor John (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Formicone, Gabriele (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2019