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Description
This work focuses on the existence of multiple resistance states in a type of emerging non-volatile resistive memory device known commonly as Programmable Metallization Cell (PMC) or Conductive Bridge Random Access Memory (CBRAM), which can be important for applications such as multi-bit memory as well as non-volatile logic and neuromorphic

This work focuses on the existence of multiple resistance states in a type of emerging non-volatile resistive memory device known commonly as Programmable Metallization Cell (PMC) or Conductive Bridge Random Access Memory (CBRAM), which can be important for applications such as multi-bit memory as well as non-volatile logic and neuromorphic computing. First, experimental data from small signal, quasi-static and pulsed mode electrical characterization of such devices are presented which clearly demonstrate the inherent multi-level resistance programmability property in CBRAM devices. A physics based analytical CBRAM compact model is then presented which simulates the ion-transport dynamics and filamentary growth mechanism that causes resistance change in such devices. Simulation results from the model are fitted to experimental dynamic resistance switching characteristics. The model designed using Verilog-a language is computation-efficient and can be integrated with industry standard circuit simulation tools for design and analysis of hybrid circuits involving both CMOS and CBRAM devices. Three main circuit applications for CBRAM devices are explored in this work. Firstly, the susceptibility of CBRAM memory arrays to single event induced upsets is analyzed via compact model simulation and experimental heavy ion testing data that show possibility of both high resistance to low resistance and low resistance to high resistance transitions due to ion strikes. Next, a non-volatile sense amplifier based flip-flop architecture is proposed which can help make leakage power consumption negligible by allowing complete shutdown of power supply while retaining its output data in CBRAM devices. Reliability and energy consumption of the flip-flop circuit for different CBRAM low resistance levels and supply voltage values are analyzed and compared to CMOS designs. Possible extension of this architecture for threshold logic function computation using the CBRAM devices as re-configurable resistive weights is also discussed. Lastly, Spike timing dependent plasticity (STDP) based gradual resistance change behavior in CBRAM device fabricated in back-end-of-line on a CMOS die containing integrate and fire CMOS neuron circuits is demonstrated for the first time which indicates the feasibility of using CBRAM devices as electronic synapses in spiking neural network hardware implementations for non-Boolean neuromorphic computing.
ContributorsMahalanabis, Debayan (Author) / Barnaby, Hugh J. (Thesis advisor) / Kozicki, Michael N. (Committee member) / Vrudhula, Sarma (Committee member) / Yu, Shimeng (Committee member) / Arizona State University (Publisher)
Created2015
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Description
Speech recognition and keyword detection are becoming increasingly popular applications for mobile systems. While deep neural network (DNN) implementation of these systems have very good performance,

they have large memory and compute resource requirements, making their implementation on a mobile device quite challenging. In this thesis, techniques to reduce the

Speech recognition and keyword detection are becoming increasingly popular applications for mobile systems. While deep neural network (DNN) implementation of these systems have very good performance,

they have large memory and compute resource requirements, making their implementation on a mobile device quite challenging. In this thesis, techniques to reduce the memory and computation cost

of keyword detection and speech recognition networks (or DNNs) are presented.

The first technique is based on representing all weights and biases by a small number of bits and mapping all nodal computations into fixed-point ones with minimal degradation in the

accuracy. Experiments conducted on the Resource Management (RM) database show that for the keyword detection neural network, representing the weights by 5 bits results in a 6 fold reduction in memory compared to a floating point implementation with very little loss in performance. Similarly, for the speech recognition neural network, representing the weights by 6 bits results in a 5 fold reduction in memory while maintaining an error rate similar to a floating point implementation. Additional reduction in memory is achieved by a technique called weight pruning,

where the weights are classified as sensitive and insensitive and the sensitive weights are represented with higher precision. A combination of these two techniques helps reduce the memory

footprint by 81 - 84% for speech recognition and keyword detection networks respectively.

Further reduction in memory size is achieved by judiciously dropping connections for large blocks of weights. The corresponding technique, termed coarse-grain sparsification, introduces

hardware-aware sparsity during DNN training, which leads to efficient weight memory compression and significant reduction in the number of computations during classification without

loss of accuracy. Keyword detection and speech recognition DNNs trained with 75% of the weights dropped and classified with 5-6 bit weight precision effectively reduced the weight memory

requirement by ~95% compared to a fully-connected network with double precision, while showing similar performance in keyword detection accuracy and word error rate.
ContributorsArunachalam, Sairam (Author) / Chakrabarti, Chaitali (Thesis advisor) / Seo, Jae-Sun (Thesis advisor) / Cao, Yu (Committee member) / Arizona State University (Publisher)
Created2016