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- Genre: Academic theses
- Creators: Kitchen, Jennifer
- Creators: Long, Yu
Description
A 4-phase, quasi-current-mode hysteretic buck converter with digital frequency synchronization, online comparator offset-calibration and digital current sharing control is presented. The switching frequency of the hysteretic converter is digitally synchronized to the input clock reference with less than ±1.5% error in the switching frequency range of 3-9.5MHz. The online offset calibration cancels the input-referred offset of the hysteretic comparator and enables ±1.1% voltage regulation accuracy. Maximum current-sharing error of ±3.6% is achieved by a duty-cycle-calibrated delay line based PWM generator, without affecting the phase synchronization timing sequence. In light load conditions, individual converter phases can be disabled, and the final stage power converter output stage is segmented for high efficiency. The DC-DC converter achieves 93% peak efficiency for Vi = 2V and Vo = 1.6V.
ContributorsSun, Ming (Author) / Bakkaloglu, Bertan (Thesis advisor) / Garrity, Douglas (Committee member) / Seo, Jae-Sun (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2017
Description
Readout Integrated Circuits(ROICs) are important components of infrared(IR) imag
ing systems. Performance of ROICs affect the quality of images obtained from IR
imaging systems. Contemporary infrared imaging applications demand ROICs that
can support large dynamic range, high frame rate, high output data rate, at low
cost, size and power. Some of these applications are military surveillance, remote
sensing in space and earth science missions and medical diagnosis. This work focuses
on developing a ROIC unit cell prototype for National Aeronautics and Space Ad
ministration(NASA), Jet Propulsion Laboratory’s(JPL’s) space applications. These
space applications also demand high sensitivity, longer integration times(large well
capacity), wide operating temperature range, wide input current range and immunity
to radiation events such as Single Event Latchup(SEL).
This work proposes a digital ROIC(DROIC) unit cell prototype of 30ux30u size,
to be used mainly with NASA JPL’s High Operating Temperature Barrier Infrared
Detectors(HOT BIRDs). Current state of the art DROICs achieve a dynamic range
of 16 bits using advanced 65-90nm CMOS processes which adds a lot of cost overhead.
The DROIC pixel proposed in this work uses a low cost 180nm CMOS process and
supports a dynamic range of 20 bits operating at a low frame rate of 100 frames per
second(fps), and a dynamic range of 12 bits operating at a high frame rate of 5kfps.
The total electron well capacity of this DROIC pixel is 1.27 billion electrons, enabling
integration times as long as 10ms, to achieve better dynamic range. The DROIC unit
cell uses an in-pixel 12-bit coarse ADC and an external 8-bit DAC based fine ADC.
The proposed DROIC uses layout techniques that make it immune to radiation up to
300krad(Si) of total ionizing dose(TID) and single event latch-up(SEL). It also has a
wide input current range from 10pA to 1uA and supports detectors operating from
Short-wave infrared (SWIR) to longwave infrared (LWIR) regions.
ing systems. Performance of ROICs affect the quality of images obtained from IR
imaging systems. Contemporary infrared imaging applications demand ROICs that
can support large dynamic range, high frame rate, high output data rate, at low
cost, size and power. Some of these applications are military surveillance, remote
sensing in space and earth science missions and medical diagnosis. This work focuses
on developing a ROIC unit cell prototype for National Aeronautics and Space Ad
ministration(NASA), Jet Propulsion Laboratory’s(JPL’s) space applications. These
space applications also demand high sensitivity, longer integration times(large well
capacity), wide operating temperature range, wide input current range and immunity
to radiation events such as Single Event Latchup(SEL).
This work proposes a digital ROIC(DROIC) unit cell prototype of 30ux30u size,
to be used mainly with NASA JPL’s High Operating Temperature Barrier Infrared
Detectors(HOT BIRDs). Current state of the art DROICs achieve a dynamic range
of 16 bits using advanced 65-90nm CMOS processes which adds a lot of cost overhead.
The DROIC pixel proposed in this work uses a low cost 180nm CMOS process and
supports a dynamic range of 20 bits operating at a low frame rate of 100 frames per
second(fps), and a dynamic range of 12 bits operating at a high frame rate of 5kfps.
The total electron well capacity of this DROIC pixel is 1.27 billion electrons, enabling
integration times as long as 10ms, to achieve better dynamic range. The DROIC unit
cell uses an in-pixel 12-bit coarse ADC and an external 8-bit DAC based fine ADC.
The proposed DROIC uses layout techniques that make it immune to radiation up to
300krad(Si) of total ionizing dose(TID) and single event latch-up(SEL). It also has a
wide input current range from 10pA to 1uA and supports detectors operating from
Short-wave infrared (SWIR) to longwave infrared (LWIR) regions.
ContributorsPraveen, Subramanya Chilukuri (Author) / Bakkaloglu, Bertan (Thesis advisor) / Kitchen, Jennifer (Committee member) / Long, Yu (Committee member) / Arizona State University (Publisher)
Created2019
Description
High-efficiency DC-DC converters make up one of the important blocks of state-of-the-art power supplies. The trend toward high level of transistor integration has caused load current demands to grow significantly. Supplying high output current and minimizing output current ripple has been a driving force behind the evolution of Multi-phase topologies. Ability to supply large output current with improved efficiency, reduction in the size of filter components, improved transient response make multi-phase topologies a preferred choice for low voltage-high current applications.
Current sensing capability inside a system is much sought after for applications which include Peak-current mode control, Current limiting, Overload protection. Current sensing is extremely important for current sharing in Multi-phase topologies. Existing approaches such as Series resistor, SenseFET, inductor DCR based current sensing are simple but their drawbacks such low efficiency, low accuracy, limited bandwidth demand a novel current sensing scheme.
This research presents a systematic design procedure of a 5V - 1.8V, 8A 4-Phase Buck regulator with a novel current sensing scheme based on replication of the inductor current. The proposed solution consists of detailed system modeling in PLECS which includes modification of the peak current mode model to accommodate the new current sensing element, derivation of power-stage and Plant transfer functions, Controller design. The proposed model has been verified through PLECS simulations and compared with a transistor-level implementation of the system. The time-domain parameters such as overshoot and settling-time simulated through transistor-level
implementation is in close agreement with the results obtained from the PLECS model.
Current sensing capability inside a system is much sought after for applications which include Peak-current mode control, Current limiting, Overload protection. Current sensing is extremely important for current sharing in Multi-phase topologies. Existing approaches such as Series resistor, SenseFET, inductor DCR based current sensing are simple but their drawbacks such low efficiency, low accuracy, limited bandwidth demand a novel current sensing scheme.
This research presents a systematic design procedure of a 5V - 1.8V, 8A 4-Phase Buck regulator with a novel current sensing scheme based on replication of the inductor current. The proposed solution consists of detailed system modeling in PLECS which includes modification of the peak current mode model to accommodate the new current sensing element, derivation of power-stage and Plant transfer functions, Controller design. The proposed model has been verified through PLECS simulations and compared with a transistor-level implementation of the system. The time-domain parameters such as overshoot and settling-time simulated through transistor-level
implementation is in close agreement with the results obtained from the PLECS model.
ContributorsBurli, Venkatesh (Author) / Bakkaloglu, Bertan (Thesis advisor) / Garrity, Douglas (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2017