Matching Items (2)
155143-Thumbnail Image.png
Description
The OLYMPUS experiment measured the two-photon exchange contribution to elastic electron-proton scattering, over a range of four-momentum transfer from \(0.6 < Q^2 < 2.2\) \((\mathrm{GeV/c})^2\). The motivation for the experiment stemmed from measurements of the electric-to-magnetic form factor ratio of the proton \(\mu G_E/G_M\) extracted from polarization observables in

The OLYMPUS experiment measured the two-photon exchange contribution to elastic electron-proton scattering, over a range of four-momentum transfer from \(0.6 < Q^2 < 2.2\) \((\mathrm{GeV/c})^2\). The motivation for the experiment stemmed from measurements of the electric-to-magnetic form factor ratio of the proton \(\mu G_E/G_M\) extracted from polarization observables in polarized electron-proton scattering. Polarized electron-proton scattering experiments have revealed a significant decrease in \(\mu G_E/G_M\) at large \(Q^2\), in contrast to previous measurements from unpolarized electron-proton scattering. The commonly accepted hypothesis is that the discrepancy in the form factor ratio is due to neglected higher-order terms in the elastic electron-proton scattering cross section, in particular the two-photon exchange amplitude.

The goal of OLYMPUS was to measure the two-photon exchange contribution by measuring the positron-proton to electron-proton elastic scattering cross section ratio, \(\sigma_{e^+p}/\sigma_{e^-p}\). The two-photon exchange contribution is correlated to the deviation of the cross section ratio from unity.

In 2012, the OLYMPUS experiment collected over 4 fb\(^{-1}\) of \(e^+p\) and \(e^-p\) scattering data using electron and positron beams incident on a hydrogen gas target. The scattered leptons and protons were measured exclusively with a large acceptance spectrometer. OLYMPUS observed a slight rise in \(\sigma_{e^+p}/\sigma_{e^-p}\) of at most 1-2\% over a \(Q^2\) range of \(0.6 < Q^2 < 2.2\) \((\mathrm{GeV/c})^2\). This work discusses the motivations, experiment, analysis method, and the preliminary results for the cross section ratio as measured by OLYMPUS.
ContributorsIce, Lauren (Author) / Alarcon, Ricardo O (Thesis advisor) / Dugger, Michael (Committee member) / Lebed, Richard (Committee member) / Ritchie, Barry (Committee member) / Arizona State University (Publisher)
Created2016
149431-Thumbnail Image.png
Description
Silicon carbide (SiC), long touted as a material that can satisfy the specific property requirements for high temperature and high power applications, was studied quantitatively using various techniques. The electronic band structure of 4H SiC is examined in the first half of this dissertation. A brief introduction to band structure

Silicon carbide (SiC), long touted as a material that can satisfy the specific property requirements for high temperature and high power applications, was studied quantitatively using various techniques. The electronic band structure of 4H SiC is examined in the first half of this dissertation. A brief introduction to band structure calculations, with particular emphasis on the empirical pseudopotential method, is given as a foundation for the subsequent work. Next, the crystal pseudopotential for 4H SiC is derived in detail, and a novel approach using a genetic algorithm search routine is employed to find the fitting parameters needed to generate the band structure. Using this technique, the band structure is fitted to experimentally measured energy band gaps giving an indirect band gap energy of 3.28 eV, and direct f¡, M, K and L energy transitions of 6.30, 4.42, 7.90 and 6.03 eV, respectively. The generated result is also shown to give effective mass values of mMf¡*=0.66m0, mMK*=0.31m0, mML*=0.34m0, in close agreement with experimental results. The second half of this dissertation discusses computational work in finding the electron Hall mobility and Hall scattering factor for 6H SiC. This disscussion begins with an introductory chapter that gives background on how scattering rates are dervied and the specific expressions for important mechanisms. The next chapter discusses mobility calculations for 6H SiC in particular, beginnning with Rode's method to solve the Boltzmann transport equation. Using this method and the transition rates of the previous chapter, an acoustic deformation potential DA value of 5.5 eV, an inter-valley phonon deformation potential Dif value of 1.25~1011 eV/m and inter-valley phonon energy ℏfÖif of 65 meV that simultaneously fit experimental data on electron Hall mobility and Hall scattering factor was found.
ContributorsNg, Garrick (Author) / Schroder, Dieter K. (Thesis advisor) / Vasileska, Dragica (Committee member) / Skromme, Brian (Committee member) / Alford, Terry (Committee member) / Marinella, Matthew (Committee member) / Arizona State University (Publisher)
Created2010