Matching Items (5)
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- All Subjects: Electronic noise
- All Subjects: Low Power
- Creators: Aberle, James T., 1961-
- Creators: Garrity, Douglas
- Creators: Ashraf, Nabil Shovon
Description
The medical industry has benefited greatly by electronic integration resulting in the explosive growth of active medical implants. These devices often treat and monitor chronic health conditions and require very minimal power usage. A key part of these medical implants is an ultra-low power two way wireless communication system. This enables both control of the implant as well as relay of information collected. This research has focused on a high performance receiver for medical implant applications. One commonly quoted specification to compare receivers is energy per bit required. This metric is useful, but incomplete in that it ignores Sensitivity level, bit error rate, and immunity to interferers. In this study exploration of receiver architectures and convergence upon a comprehensive solution is done. This analysis is used to design and build a system for validation. The Direct Conversion Receiver architecture implemented for the MICS standard in 0.18 µm CMOS process consumes approximately 2 mW is competitive with published research.
ContributorsStevens, Mark (Author) / Kiaei, Sayfe (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Aberle, James T., 1961- (Committee member) / Barnaby, Hugh (Committee member) / Arizona State University (Publisher)
Created2012
Description
Modern day deep sub-micron SOC architectures often demand very low supply noise levels. As supply voltage decreases with decreasing deep sub-micron gate length, noise on the power supply starts playing a dominant role in noise-sensitive analog blocks, especially high precision ADC, PLL, and RF SOC's. Most handheld and portable applications and highly sensitive medical instrumentation circuits tend to use low noise regulators as on-chip or on board power supply. Nonlinearities associated with LNA's, mixers and oscillators up-convert low frequency noise with the signal band. Specifically, synthesizer and TCXO phase noise, LNA and mixer noise figure, and adjacent channel power ratios of the PA are heavily influenced by the supply noise and ripple. This poses a stringent requirement on a very low noise power supply with high accuracy and fast transient response. Low Dropout (LDO) regulators are preferred over switching regulators for these applications due to their attractive low noise and low ripple features. LDO's shield sensitive blocks from high frequency fluctuations on the power supply while providing high accuracy, fast response supply regulation.
This research focuses on developing innovative techniques to reduce the noise of any generic wideband LDO, stable with or without load capacitor. The proposed techniques include Switched RC Filtering to reduce the Bandgap Reference noise, Current Mode Chopping to reduce the Error Amplifier noise & MOS-R based RC filter to reduce the noise due to bias current. The residual chopping ripple was reduced using a Switched Capacitor notch filter. Using these techniques, the integrated noise of a wideband LDO was brought down to 15µV in the integration band of 10Hz to 100kHz. These techniques can be integrated into any generic LDO without any significant area overhead.
This research focuses on developing innovative techniques to reduce the noise of any generic wideband LDO, stable with or without load capacitor. The proposed techniques include Switched RC Filtering to reduce the Bandgap Reference noise, Current Mode Chopping to reduce the Error Amplifier noise & MOS-R based RC filter to reduce the noise due to bias current. The residual chopping ripple was reduced using a Switched Capacitor notch filter. Using these techniques, the integrated noise of a wideband LDO was brought down to 15µV in the integration band of 10Hz to 100kHz. These techniques can be integrated into any generic LDO without any significant area overhead.
ContributorsMagod Ramakrishna, Raveesh (Author) / Bakkaloglu, Bertan (Thesis advisor) / Garrity, Douglas (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2014
Description
In very small electronic devices the alternate capture and emission of carriers at an individual defect site located at the interface of Si:SiO2 of a MOSFET generates discrete switching in the device conductance referred to as a random telegraph signal (RTS) or random telegraph noise (RTN). In this research work, the integration of random defects positioned across the channel at the Si:SiO2 interface from source end to the drain end in the presence of different random dopant distributions are used to conduct Ensemble Monte-Carlo ( EMC ) based numerical simulation of key device performance metrics for 45 nm gate length MOSFET device. The two main performance parameters that affect RTS based reliability measurements are percentage change in threshold voltage and percentage change in drain current fluctuation in the saturation region. It has been observed as a result of the simulation that changes in both and values moderately decrease as the defect position is gradually moved from source end to the drain end of the channel. Precise analytical device physics based model needs to be developed to explain and assess the EMC simulation based higher VT fluctuations as experienced for trap positions at the source side. A new analytical model has been developed that simultaneously takes account of dopant number variations in the channel and depletion region underneath and carrier mobility fluctuations resulting from fluctuations in surface potential barriers. Comparisons of this new analytical model along with existing analytical models are shown to correlate with 3D EMC simulation based model for assessment of VT fluctuations percentage induced by a single interface trap. With scaling of devices beyond 32 nm node, halo doping at the source and drain are routinely incorporated to combat the threshold voltage roll-off that takes place with effective channel length reduction. As a final study on this regard, 3D EMC simulation method based computations of threshold voltage fluctuations have been performed for varying source and drain halo pocket length to illustrate the threshold voltage fluctuations related reliability problems that have been aggravated by trap positions near the source at the interface compared to conventional 45 nm MOSFET.
ContributorsAshraf, Nabil Shovon (Author) / Vasileska, Dragica (Thesis advisor) / Schroder, Dieter (Committee member) / Goodnick, Stephen (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2011
Description
Semiconductor device scaling has kept up with Moore's law for the past decades and they have been scaling by a factor of half every one and half years. Every new generation of device technology opens up new opportunities and challenges and especially so for analog design. High speed and low gain is characteristic of these processes and hence a tradeoff that can enable to get back gain by trading speed is crucial. This thesis proposes a solution that increases the speed of sampling of a circuit by a factor of three while reducing the specifications on analog blocks and keeping the power nearly constant. The techniques are based on the switched capacitor technique called Correlated Level Shifting. A triple channel Cyclic ADC has been implemented, with each channel working at a sampling frequency of 3.33MS/s and a resolution of 14 bits. The specifications are compared with that based on a traditional architecture to show the superiority of the proposed technique.
ContributorsSivakumar, Balasubramanian (Author) / Farahani, Bahar Jalali (Thesis advisor) / Garrity, Douglas (Committee member) / Bakkaloglu, Bertan (Committee member) / Aberle, James T., 1961- (Committee member) / Arizona State University (Publisher)
Created2012
Description
A dual-channel directional digital hearing aid (DHA) front end using Micro Electro Mechanical System (MEMS) microphones and an adaptive-power analog processing signal chain is presented. The analog front end consists of a double differential amplifier (DDA) based capacitance to voltage conversion circuit, 40dB variable gain amplifier (VGA) and a continuous time sigma delta analog to digital converter (CT - ΣΔ ADC). Adaptive power scaling of the 4th order CT - ΣΔ achieves 68dB SNR at 120μW, which can be scaled down to 61dB SNR at 67μW. This power saving will increse the battery life of the DHA.
ContributorsDeligoz, Ilker (Author) / Kiaei, Sayfe (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Jalali-Farahani, Bahar (Committee member) / Aberle, James T., 1961- (Committee member) / Chae, Junseok (Committee member) / Arizona State University (Publisher)
Created2010