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- All Subjects: RF
- Genre: Doctoral Dissertation
- Creators: Aberle, James
- Creators: Kiaei, Sayfe
- Member of: ASU Electronic Theses and Dissertations
- Status: Published
Description
The continuing advancement of modulation standards with newer generations of cellular technology, promises ever increasing data rate and bandwidth efficiency. However, these modulation schemes present high peak to average power ratio (PAPR) even after applying crest factor reduction. Being the most power-hungry component in the radio frequency (RF) transmitter, power amplifiers (PA) for infrastructure applications, need to operate efficiently at the presence of these high PAPR signals while maintaining reasonable linearity performance which could be improved by moderate digital pre-distortion (DPD) techniques. This strict requirement of operating efficiently at average power level while being capable of delivering the peak power, made the load modulated PAs such as Doherty PA, Outphasing PA, various Envelope Tracking PAs, Polar transmitters and most recently the load modulated balanced PA, the prime candidates for such application. However, due to its simpler architecture and ability to deliver RF power efficiently with good linearity performance has made Doherty PA (DPA) the most popular solution and has been deployed almost exclusively for wireless infrastructure application all over the world.
Although DPAs has been very successful at amplifying the high PAPR signals, most recent advancements in cellular technology has opted for higher PAPR based signals at wider bandwidth. This lead to increased research and development work to innovate advanced Doherty architectures which are more efficient at back-off (BO) power levels compared to traditional DPAs. In this dissertation, three such advanced Doherty architectures and/or techniques are proposed to achieve high efficiency at further BO power level compared to traditional architecture using symmetrical devices for carrier and peaking PAs. Gallium Nitride (GaN) based high-electron-mobility (HEMT) technology has been used to design and fabricate the DPAs to validate the proposed advanced techniques for higher efficiency with good linearity performance at BO power levels.
Although DPAs has been very successful at amplifying the high PAPR signals, most recent advancements in cellular technology has opted for higher PAPR based signals at wider bandwidth. This lead to increased research and development work to innovate advanced Doherty architectures which are more efficient at back-off (BO) power levels compared to traditional DPAs. In this dissertation, three such advanced Doherty architectures and/or techniques are proposed to achieve high efficiency at further BO power level compared to traditional architecture using symmetrical devices for carrier and peaking PAs. Gallium Nitride (GaN) based high-electron-mobility (HEMT) technology has been used to design and fabricate the DPAs to validate the proposed advanced techniques for higher efficiency with good linearity performance at BO power levels.
ContributorsRuhul Hasin, Muhammad (Author) / Kitchen, Jennifer (Thesis advisor) / Aberle, James T., 1961- (Committee member) / Bakkaloglu, Bertan (Committee member) / Kiaei, Sayfe (Committee member) / Arizona State University (Publisher)
Created2018
Description
The world has seen a revolution in cellular communication with the advent of 5G, which enables gigabits per second data speed with low latency, massive capacity, and increased availability. Complex modulated signals are used in these moderncommunication systems to achieve high spectral efficiency, and these signals exhibit high peak to average power ratios (PAPR). Design of cellular infrastructure hardware to support these complex signals therefore becomes challenging, as the transmitter’s radio frequency power amplifier (RF PA) needs to remain highly efficient at both peak and backed off power conditions. Additionally, these PAs should exhibit high linearity and support continually increasing bandwidths. Many advanced PA configurations exhibit high efficiency for processing legacy communications signals. Some of the most popular architectures are Envelope Elimination and Restoration (EER), Envelope Tracking (ET), Linear Amplification using Non-linear Component (LINC), Doherty Power Amplifiers (DPA), and Polar Transmitters. Among these techniques,
the DPA is the most widely used architecture for base-station applications because of its simple configuration and ability to be linearized using simple digital pre-distortion (DPD) algorithms. To support the cellular infrastructure needs of 5G and beyond, RF PAs, specifically DPA architectures, must be further enhanced to support broader bandwidths as well as smaller form-factors with higher levels of integration. The following four novel works are presented in this dissertation to support RF PA requirements for future cellular infrastructure:
1. A mathematical analysis to analyze the effects of non-linear parasitic capacitance (Cds) on the operation of continuous class-F (CCF) mode power amplifiers and identify their optimum operating range for high power and efficiency.
2. A methodology to incorporate a class-J harmonic trapping network inside the PA package by considering the effect of non-linear Cds, thus reducing the DPA footprint while achieving high RF performance.
3. A novel method of synthesizing the DPA’s output combining network (OCN) to realize an integrated two-stage integrated LDMOS asymmetric DPA.
4. A novel extended back-off efficiency range DPA architecture that engineers the mutual interaction between combining load and peaking off-state impedance. The theory and architecture are verified through a GaN-based DPA design.
ContributorsAhmed, Maruf Newaz (Author) / Kitchen, Jennifer (Thesis advisor) / Aberle, James (Committee member) / Bakkaloglu, Bertan (Committee member) / Ozev, Sule (Committee member) / Arizona State University (Publisher)
Created2022
Description
This thesis presents three novel studies. The first two works focus on galvanically isolated chip-to-chip communication, and the third research studies class-E pulse-width modulated power amplifiers. First, a common-mode resilient CMOS (complementary metal-oxide-semiconductor) galvanically isolated Radio Frequency (RF) chip-to-chip communication system is presented utilizing laterally resonant coupled circuits to increases maximum common-mode transient immunity and the isolation capability of galvanic isolators in a low-cost standard CMOS solution beyond the limits provided from the vertical coupling. The design provides the highest reported CMTI (common-mode transient immunity) of more than 600 kV/µs, 5 kVpk isolation, and a chip area of 0.95 mm2. In the second work, a bi-directional ultra-wideband transformer-coupled galvanic isolator is reported for the first time. The proposed design merges the functionality of two isolated channels into one magnetically coupled communication, enabling up to 50% form-factor and assembly cost reduction while achieving a simultaneously robust and state-of-art performance. This work achieves simultaneous robust, wideband, and energy-efficient performance of 300 Mb/s data rate, isolation of 7.8 kVrms, and power consumption and propagation delay of 200 pJ/b and 5 ns, respectively, in only 0.8 mm2 area. The third works studies class-E pulse-width modulated (PWM) Power amplifiers (PAs). For the first time, it presents a design technique to significantly extend the Power back-off (PBO) dynamic range of PWM PAs over the prior art. A proof-of-concept watt-level class-E PA is designed using a GaN HEMT and exhibits more than 6dB dynamic range for a 50 to 30 percent duty cycle variation. Moreover, in this work, the effects of non-idealities on performance and design of class-E power amplifiers for variable supply on and pulse-width operations are characterized and studied, including the effect of non-linear parasitic capacitances and its exploitation for enhancement of average efficiency and self-heating effects in class-E SMPAs using a new over dry-ice measurement technique was presented for this first time. The non-ideality study allows for capturing a full view of the design requirement and considerations of class-E power amplifiers and provides a window to the phenomena that lead to a mismatch between the ideal and actual performance of class-E power amplifiers and their root causes.
ContributorsJavidahmadabadi, Mahdi (Author) / Kitchen, Jennifer N (Thesis advisor) / Aberle, James (Committee member) / Bakkaloglu, Bertan (Committee member) / Burton, Richard (Committee member) / Arizona State University (Publisher)
Created2021