Matching Items (6)
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- All Subjects: Computer storage devices
- Creators: Dasgupta, Partha
- Creators: Kozicki, Michael
Description
There is an ever growing need for larger memories which are reliable and fast. New technologies to implement non-volatile memories which are large, fast, compact and cost-efficient are being studied extensively. One of the most promising technologies being developed is the resistive RAM (ReRAM). In ReRAM the resistance of the device varies with the voltage applied across it. Programmable metallization cells (PMC) is one of the devices belonging to this category of non-volatile memories.
In order to advance the development of these devices, there is a need to develop simulation models which replicate the behavior of these devices in circuits. In this thesis, a verilogA model for the PMC has been developed. The behavior of the model has been tested using DC and transient simulations. Experimental data obtained from testing PMC devices fabricated at Arizona State University have been compared to results obtained from simulation.
A basic memory cell known as the 1T 1R cell built using the PMC has also been simulated and verified. These memory cells have the potential to be building blocks of large scale memories. I believe that the verilogA model developed in this thesis will prove to be a powerful tool for researchers and circuit developers looking to develop non-volatile memories using alternative technologies.
In order to advance the development of these devices, there is a need to develop simulation models which replicate the behavior of these devices in circuits. In this thesis, a verilogA model for the PMC has been developed. The behavior of the model has been tested using DC and transient simulations. Experimental data obtained from testing PMC devices fabricated at Arizona State University have been compared to results obtained from simulation.
A basic memory cell known as the 1T 1R cell built using the PMC has also been simulated and verified. These memory cells have the potential to be building blocks of large scale memories. I believe that the verilogA model developed in this thesis will prove to be a powerful tool for researchers and circuit developers looking to develop non-volatile memories using alternative technologies.
ContributorsBharadwaj, Vineeth (Author) / Barnaby, Hugh (Thesis advisor) / Kozicki, Michael (Committee member) / Mikkola, Esko (Committee member) / Arizona State University (Publisher)
Created2014
Description
Nonvolatile memory (NVM) technologies have been an integral part of electronic systems for the past 30 years. The ideal non-volatile memory have minimal physical size, energy usage, and cost while having maximal speed, capacity, retention time, and radiation hardness. A promising candidate for next-generation memory is ion-conducting bridging RAM which is referred to as programmable metallization cell (PMC), conductive bridge RAM (CBRAM), or electrochemical metallization memory (ECM), which is likely to surpass flash memory in all the ideal memory characteristics. A comprehensive physics-based model is needed to completely understand PMC operation and assist in design optimization.
To advance the PMC modeling effort, this thesis presents a precise physical model parameterizing materials associated with both ion-rich and ion-poor layers of the PMC's solid electrolyte, so that captures the static electrical behavior of the PMC in both its low-resistance on-state (LRS) and high resistance off-state (HRS). The experimental data is measured from a chalcogenide glass PMC designed and manufactured at ASU. The static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge30Se70 ChG film is characterized and modeled using three dimensional simulation code written in Silvaco Atlas finite element analysis software. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfunctions, density of states, carrier mobilities, dielectric constants, and affinities.
The sensitivity of our modeled PMC to the variation of its prominent achieved material parameters is examined on the HRS and LRS impedance behavior.
The obtained accurate set of material parameters for both Ag-rich and Ag-poor ChG systems and process variation verification on electrical characteristics enables greater fidelity in PMC device simulation, which significantly enhances our ability to understand the underlying physics of ChG-based resistive switching memory.
To advance the PMC modeling effort, this thesis presents a precise physical model parameterizing materials associated with both ion-rich and ion-poor layers of the PMC's solid electrolyte, so that captures the static electrical behavior of the PMC in both its low-resistance on-state (LRS) and high resistance off-state (HRS). The experimental data is measured from a chalcogenide glass PMC designed and manufactured at ASU. The static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge30Se70 ChG film is characterized and modeled using three dimensional simulation code written in Silvaco Atlas finite element analysis software. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfunctions, density of states, carrier mobilities, dielectric constants, and affinities.
The sensitivity of our modeled PMC to the variation of its prominent achieved material parameters is examined on the HRS and LRS impedance behavior.
The obtained accurate set of material parameters for both Ag-rich and Ag-poor ChG systems and process variation verification on electrical characteristics enables greater fidelity in PMC device simulation, which significantly enhances our ability to understand the underlying physics of ChG-based resistive switching memory.
ContributorsRajabi, Saba (Author) / Barnaby, Hugh (Thesis advisor) / Kozicki, Michael (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2014
Description
As the number of cores per chip increases, maintaining cache coherence becomes prohibitive for both power and performance. Non Coherent Cache (NCC) architectures do away with hardware-based cache coherence, but they become difficult to program. Some existing architectures provide a middle ground by providing some shared memory in the hardware. Specifically, the 48-core Intel Single-chip Cloud Computer (SCC) provides some off-chip (DRAM) shared memory some on-chip (SRAM) shared memory. We call such architectures Hybrid Shared Memory, or HSM, manycore architectures. However, how to efficiently execute multi-threaded programs on HSM architectures is an open problem. To be able to execute a multi-threaded program correctly on HSM architectures, the compiler must: i) identify all the shared data and map it to the shared memory, and ii) map the frequently accessed shared data to the on-chip shared memory. This work presents a source-to-source translator written using CETUS that identifies a conservative superset of all the shared data in a multi-threaded application and maps it to the shared memory such that it enables execution on HSM architectures.
ContributorsRawat, Tushar (Author) / Shrivastava, Aviral (Thesis advisor) / Dasgupta, Partha (Committee member) / Fainekos, Georgios (Committee member) / Arizona State University (Publisher)
Created2014
Description
This thesis proposed a novel approach to establish the trust model in a social network scenario based on users' emails. Email is one of the most important social connections nowadays. By analyzing email exchange activities among users, a social network trust model can be established to judge the trust rate between each two users. The whole trust checking process is divided into two steps: local checking and remote checking. Local checking directly contacts the email server to calculate the trust rate based on user's own email communication history. Remote checking is a distributed computing process to get help from user's social network friends and built the trust rate together. The email-based trust model is built upon a cloud computing framework called MobiCloud. Inside MobiCloud, each user occupies a virtual machine which can directly communicate with others. Based on this feature, the distributed trust model is implemented as a combination of local analysis and remote analysis in the cloud. Experiment results show that the trust evaluation model can give accurate trust rate even in a small scale social network which does not have lots of social connections. With this trust model, the security in both social network services and email communication could be improved.
ContributorsZhong, Yunji (Author) / Huang, Dijiang (Thesis advisor) / Dasgupta, Partha (Committee member) / Syrotiuk, Violet (Committee member) / Arizona State University (Publisher)
Created2011
Description
Limited Local Memory (LLM) multicore architectures are promising powerefficient architectures will scalable memory hierarchy. In LLM multicores, each core can access only a small local memory. Accesses to a large shared global memory can only be made explicitly through Direct Memory Access (DMA) operations. Standard Template Library (STL) is a powerful programming tool and is widely used for software development. STLs provide dynamic data structures, algorithms, and iterators for vector, deque (double-ended queue), list, map (red-black tree), etc. Since the size of the local memory is limited in the cores of the LLM architecture, and data transfer is not automatically supported by hardware cache or OS, the usage of current STL implementation on LLM multicores is limited. Specifically, there is a hard limitation on the amount of data they can handle. In this article, we propose and implement a framework which manages the STL container classes on the local memory of LLM multicore architecture. Our proposal removes the data size limitation of the STL, and therefore improves the programmability on LLM multicore architectures with little change to the original program. Our implementation results in only about 12%-17% increase in static library code size and reasonable runtime overheads.
ContributorsLu, Di (Author) / Shrivastava, Aviral (Thesis advisor) / Chatha, Karamvir (Committee member) / Dasgupta, Partha (Committee member) / Arizona State University (Publisher)
Created2012
Description
Non-volatile memory (NVM) has become a staple in the everyday life of consumers. NVM manifests inside cell phones, laptops, and most recently, wearable tech such as smart watches. NAND Flash has been an excellent solution to conditions requiring fast, compact NVM. Current technology nodes are nearing the physical limits of scaling, preventing flash from improving. To combat the limitations of flash and to appease consumer demand for progressively faster and denser NVM, new technologies are needed. One possible candidate for the replacement of NAND Flash is programmable metallization cells (PMC). PMC are a type of resistive memory, meaning that they do not rely on charge storage to maintain a logic state. Depending on their application, it is possible that devices containing NVM will be exposed to harsh radiation environments. As part of the process for developing a novel memory technology, it is important to characterize the effects irradiation has on the functionality of the devices.
This thesis characterizes the effects that ionizing γ-ray irradiation has on the retention of the programmed resistive state of a PMC. The PMC devices tested used Ge30Se70 doped with Ag as the solid electrolyte layer and were fabricated by the thesis author in a Class 100 clean room. Individual device tiles were wire bonded into ceramic packages and tested in a biased and floating contact scenario.
The first scenario presented shows that PMC devices are capable of retaining their programmed state up to the maximum exposed total ionizing dose (TID) of 3.1 Mrad(Si). In this first scenario, the contacts of the PMC devices were left floating during exposure. The second scenario tested shows that the PMC devices are capable of retaining their state until the maximum TID of 10.1 Mrad(Si) was reached. The contacts in the second scenario were biased, with a 50 mV read voltage applied to the anode contact. Analysis of the results show that Ge30Se70 PMC are ionizing radiation tolerant and can retain a programmed state to a higher TID than NAND Flash memory.
This thesis characterizes the effects that ionizing γ-ray irradiation has on the retention of the programmed resistive state of a PMC. The PMC devices tested used Ge30Se70 doped with Ag as the solid electrolyte layer and were fabricated by the thesis author in a Class 100 clean room. Individual device tiles were wire bonded into ceramic packages and tested in a biased and floating contact scenario.
The first scenario presented shows that PMC devices are capable of retaining their programmed state up to the maximum exposed total ionizing dose (TID) of 3.1 Mrad(Si). In this first scenario, the contacts of the PMC devices were left floating during exposure. The second scenario tested shows that the PMC devices are capable of retaining their state until the maximum TID of 10.1 Mrad(Si) was reached. The contacts in the second scenario were biased, with a 50 mV read voltage applied to the anode contact. Analysis of the results show that Ge30Se70 PMC are ionizing radiation tolerant and can retain a programmed state to a higher TID than NAND Flash memory.
ContributorsTaggart, Jennifer Lynn (Author) / Barnaby, Hugh (Thesis advisor) / Kozicki, Michael (Committee member) / Holbert, Keith E. (Committee member) / Arizona State University (Publisher)
Created2015