Matching Items (8)
Filtering by
- All Subjects: Integrated circuits
- Creators: Kitchen, Jennifer
- Creators: Benkert, Volker
Description
Isolated DC/DC converters are used to provide electrical isolation between two supply domain systems. A fully integrated isolated DC/DC converter having no board-level components and fabricated using standard integrated circuits (IC) process is highly desirable in order to increase the system reliability and reduce costs. The isolation between the low-voltage side and high-voltage side of the converter is realized by a transformer that transfers energy while blocking the DC loop. The resonant mode power oscillator is used to enable high efficiency power transfer. The on-chip transformer is expected to have high coil inductance, high quality factors and high coupling coefficient to reduce the loss in the oscillation. The performance of a transformer is highly dependent on the vertical structure, horizontal geometry and other indispensable structures that make it compatible with the IC process such as metal fills and patterned ground shield (PGS). With the help of three-dimensional (3-D) electro-magnetic (EM) simulation software, the 3-D transformer model is simulated and the simulation result is got with high accuracy.
In this thesis an on-chip transformer for a fully integrated DC/DC converter using standard IC process is developed. Different types of transformers are modeled and simulated in HFSS. The performances are compared to select the optimum design. The effects of the additional structures including PGS and metal fills are also simulated. The transformer is tested with a network analyzer and the testing results show a good consistency with the simulation results when taking the chip traces, printed circuit board (PCB) traces, bond wires and SMA connectors into account.
In this thesis an on-chip transformer for a fully integrated DC/DC converter using standard IC process is developed. Different types of transformers are modeled and simulated in HFSS. The performances are compared to select the optimum design. The effects of the additional structures including PGS and metal fills are also simulated. The transformer is tested with a network analyzer and the testing results show a good consistency with the simulation results when taking the chip traces, printed circuit board (PCB) traces, bond wires and SMA connectors into account.
ContributorsZhao, Yao (Author) / Bakkaloglu, Bertan (Thesis advisor) / Kiaei, Sayfe (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2014
Description
Negative Bias Temperature Instability (NBTI) is commonly seen in p-channel transistors under negative gate voltages at an elevated temperature. The interface traps, oxide traps and NBTI mechanisms are discussed and their effect on circuit degradation and results are discussed. This thesis focuses on developing a model for simulating impact of NBTI effects at circuit level. The model mimics the effects of degradation caused by the defects.
The NBTI model developed in this work is validated and sanity checked by using the simulation data from silvaco and gives excellent results. Furthermore the susceptibility of CMOS circuits such as the CMOS inverter, and a ring oscillator to NBTI is investigated. The results show that the oscillation frequency of a ring oscillator decreases and the SET pulse broadens with the NBTI.
The NBTI model developed in this work is validated and sanity checked by using the simulation data from silvaco and gives excellent results. Furthermore the susceptibility of CMOS circuits such as the CMOS inverter, and a ring oscillator to NBTI is investigated. The results show that the oscillation frequency of a ring oscillator decreases and the SET pulse broadens with the NBTI.
ContributorsPadala, Sudheer (Author) / Barnaby, Hugh (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2014
Description
Power Management circuits are employed in almost all electronic equipment and they have energy storage elements (capacitors and inductors) as building blocks along with other active circuitry. Power management circuits employ feedback to achieve good load and line regulation. The feedback loop is designed at an operating point and component values are chosen to meet that design requirements. But the capacitors and inductors are subject to variations due to temperature, aging and load stress. Due to these variations, the feedback loop can cross its robustness margins and can lead to degraded performance and potential instability. Another issue in power management circuits is the measurement of their frequency response for stability assessment. The standard techniques used in production test environment require expensive measurement equipment (Network Analyzer) and time. These two issues of component variations and frequency response measurement can be addressed if the frequency response of the power converter is used as measure of component (capacitor and inductor) variations. So, a single solution of frequency response measurement solves both the issues. This work examines system identification (frequency response measurement) of power management circuits based on cross correlation technique and proposes the use of switched capacitor correlator for this purpose. A switched capacitor correlator has been designed and used in the system identification of Linear and Switching regulators. The obtained results are compared with the standard frequency response measurement methods of power converters.
ContributorsMalladi, Venkata Naga Koushik (Author) / Bakkaloglu, Bertan (Thesis advisor) / Kitchen, Jennifer (Committee member) / Ogras, Umit Y. (Committee member) / Arizona State University (Publisher)
Created2015
Description
The increase in computing power has simultaneously increased the demand for input/output (I/O) bandwidth. Unfortunately, the speed of I/O and memory interconnects have not kept pace. Thus, processor-based systems are I/O and interconnect limited. The memory aggregated bandwidth is not scaling fast enough to keep up with increasing bandwidth demands. The term "memory wall" has been coined to describe this phenomenon.
A new memory bus concept that has the potential to push double data rate (DDR) memory speed to 30 Gbit/s is presented. We propose to map the conventional DDR bus to a microwave link using a multicarrier frequency division multiplexing scheme. The memory bus is formed using a microwave signal carried within a waveguide. We call this approach multicarrier memory channel architecture (MCMCA). In MCMCA, each memory signal is modulated onto an RF carrier using 64-QAM format or higher. The carriers are then routed using substrate integrated waveguide (SIW) interconnects. At the receiver, the memory signals are demodulated and then delivered to SDRAM devices. We pioneered the usage of SIW as memory channel interconnects and demonstrated that it alleviates the memory bandwidth bottleneck. We demonstrated SIW performance superiority over conventional transmission line in immunity to cross-talk and electromagnetic interference. We developed a methodology based on design of experiment (DOE) and response surface method techniques that optimizes the design of SIW interconnects and minimizes its performance fluctuations under material and manufacturing variations. Along with using SIW, we implemented a multicarrier architecture which enabled the aggregated DDR bandwidth to reach 30 Gbit/s. We developed an end-to-end system model in Simulink and demonstrated the MCMCA performance for ultra-high throughput memory channel.
Experimental characterization of the new channel shows that by using judicious frequency division multiplexing, as few as one SIW interconnect is sufficient to transmit the 64 DDR bits. Overall aggregated bus data rate achieves 240 GBytes/s data transfer with EVM not exceeding 2.26% and phase error of 1.07 degree or less.
A new memory bus concept that has the potential to push double data rate (DDR) memory speed to 30 Gbit/s is presented. We propose to map the conventional DDR bus to a microwave link using a multicarrier frequency division multiplexing scheme. The memory bus is formed using a microwave signal carried within a waveguide. We call this approach multicarrier memory channel architecture (MCMCA). In MCMCA, each memory signal is modulated onto an RF carrier using 64-QAM format or higher. The carriers are then routed using substrate integrated waveguide (SIW) interconnects. At the receiver, the memory signals are demodulated and then delivered to SDRAM devices. We pioneered the usage of SIW as memory channel interconnects and demonstrated that it alleviates the memory bandwidth bottleneck. We demonstrated SIW performance superiority over conventional transmission line in immunity to cross-talk and electromagnetic interference. We developed a methodology based on design of experiment (DOE) and response surface method techniques that optimizes the design of SIW interconnects and minimizes its performance fluctuations under material and manufacturing variations. Along with using SIW, we implemented a multicarrier architecture which enabled the aggregated DDR bandwidth to reach 30 Gbit/s. We developed an end-to-end system model in Simulink and demonstrated the MCMCA performance for ultra-high throughput memory channel.
Experimental characterization of the new channel shows that by using judicious frequency division multiplexing, as few as one SIW interconnect is sufficient to transmit the 64 DDR bits. Overall aggregated bus data rate achieves 240 GBytes/s data transfer with EVM not exceeding 2.26% and phase error of 1.07 degree or less.
ContributorsBensalem, Brahim (Author) / Aberle, James T. (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Tirkas, Panayiotis A. (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2018
Description
A single solar cell provides close to 0.5 V output at its maximum power point, which is very
low for any electronic circuit to operate. To get rid of this problem, traditionally multiple
solar cells are connected in series to get higher voltage. The disadvantage of this approach
is the efficiency loss for partial shading or mismatch. Even as low as 6-7% of shading can
result in more than 90% power loss. Therefore, Maximum Power Point Tracking (MPPT)
at single solar cell level is the most efficient way to extract power from solar cell.
Power Management IC (MPIC) used to extract power from single solar cell, needs to
start at 0.3 V input. MPPT circuitry should be implemented with minimal power and area
overhead. To start the PMIC at 0.3 V, a switch capacitor charge pump is utilized as an
auxiliary start up circuit for generating a regulated 1.8 V auxiliary supply from 0.3 V input.
The auxiliary supply powers up a MPPT converter followed by a regulated converter. At
the start up both the converters operate at 100 kHz clock with 80% duty cycle and system
output voltage starts rising. When the system output crosses 2.7 V, the auxiliary start up
circuit is turned off and the supply voltage for both the converters is derived from the system
output itself. In steady-state condition the system output is regulated to 3.0 V.
A fully integrated analog MPPT technique is proposed to extract maximum power from
the solar cell. This technique does not require Analog to Digital Converter (ADC) and
Digital Signal Processor (DSP), thus reduces area and power overhead. The proposed
MPPT techniques includes a switch capacitor based power sensor which senses current of
boost converter without using any sense resistor. A complete system is designed which
starts from 0.3 V solar cell voltage and provides regulated 3.0 V system output.
low for any electronic circuit to operate. To get rid of this problem, traditionally multiple
solar cells are connected in series to get higher voltage. The disadvantage of this approach
is the efficiency loss for partial shading or mismatch. Even as low as 6-7% of shading can
result in more than 90% power loss. Therefore, Maximum Power Point Tracking (MPPT)
at single solar cell level is the most efficient way to extract power from solar cell.
Power Management IC (MPIC) used to extract power from single solar cell, needs to
start at 0.3 V input. MPPT circuitry should be implemented with minimal power and area
overhead. To start the PMIC at 0.3 V, a switch capacitor charge pump is utilized as an
auxiliary start up circuit for generating a regulated 1.8 V auxiliary supply from 0.3 V input.
The auxiliary supply powers up a MPPT converter followed by a regulated converter. At
the start up both the converters operate at 100 kHz clock with 80% duty cycle and system
output voltage starts rising. When the system output crosses 2.7 V, the auxiliary start up
circuit is turned off and the supply voltage for both the converters is derived from the system
output itself. In steady-state condition the system output is regulated to 3.0 V.
A fully integrated analog MPPT technique is proposed to extract maximum power from
the solar cell. This technique does not require Analog to Digital Converter (ADC) and
Digital Signal Processor (DSP), thus reduces area and power overhead. The proposed
MPPT techniques includes a switch capacitor based power sensor which senses current of
boost converter without using any sense resistor. A complete system is designed which
starts from 0.3 V solar cell voltage and provides regulated 3.0 V system output.
ContributorsSingh, Shrikant (Author) / Kiaei, Sayfe (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2015
Description
ABSTRACT
German history during the 20th century was extremely complex—containing numerous events that can be labelled horrific and traumatic. The horrors and traumas of WWII forced Germans to actively address their country’s National Socialist pasts by taking responsibility for their roles, creating a national memory about the Nazi atrocities and implementing the reparations program, the Wiedergutmachungsabkommen, with the newly formed nation of Israel. The social theorist Theodor Adorno wrote in his 1959 essay “Was bedeutet: Aufarbeitung der Vergangenheit?” about three subtly nuanced terms: Aufarbeitung der Vergangenheit, Verarbeitung der Vergangenheit and Vergangensheitbewältigung, in which he addresses the various ways that Germany was dealing with traumatic events from this National Socialist past. Adorno specifically demanded a constant renegotiation of the past or Verarbeitung der Vergangenheit because it is the only way forward, through which people remember the horrors and atrocities of the past and work towards not allowing those events to occur again.
This thesis applies the theoretical framework set forth by Adorno to explore efforts to engage the DDR and Stasi past after the Fall of the Wall and reunification. Specifically, it examines the concept of Verarbeitung der Vergangenheit and demonstrates how Thomas Brussig’s satirical novel Helden wie wir, and two documentary films Aus Liebe zum Volk and Das Wunder von Leipzig are examples of working upon this DDR and Stasi past. More specifically, the utilization of humor in the novel and the paralanguage modifications in the films provide insight to the feelings and emotions that individuals had about their pasts in the DDR. It is through this expression of emotion and feelings while writing and speaking about the past, which serves as the immediate moment when individuals actively working upon their pasts.
German history during the 20th century was extremely complex—containing numerous events that can be labelled horrific and traumatic. The horrors and traumas of WWII forced Germans to actively address their country’s National Socialist pasts by taking responsibility for their roles, creating a national memory about the Nazi atrocities and implementing the reparations program, the Wiedergutmachungsabkommen, with the newly formed nation of Israel. The social theorist Theodor Adorno wrote in his 1959 essay “Was bedeutet: Aufarbeitung der Vergangenheit?” about three subtly nuanced terms: Aufarbeitung der Vergangenheit, Verarbeitung der Vergangenheit and Vergangensheitbewältigung, in which he addresses the various ways that Germany was dealing with traumatic events from this National Socialist past. Adorno specifically demanded a constant renegotiation of the past or Verarbeitung der Vergangenheit because it is the only way forward, through which people remember the horrors and atrocities of the past and work towards not allowing those events to occur again.
This thesis applies the theoretical framework set forth by Adorno to explore efforts to engage the DDR and Stasi past after the Fall of the Wall and reunification. Specifically, it examines the concept of Verarbeitung der Vergangenheit and demonstrates how Thomas Brussig’s satirical novel Helden wie wir, and two documentary films Aus Liebe zum Volk and Das Wunder von Leipzig are examples of working upon this DDR and Stasi past. More specifically, the utilization of humor in the novel and the paralanguage modifications in the films provide insight to the feelings and emotions that individuals had about their pasts in the DDR. It is through this expression of emotion and feelings while writing and speaking about the past, which serves as the immediate moment when individuals actively working upon their pasts.
ContributorsDietz, Dominik (Author) / Gilfillan, Daniel (Thesis advisor) / Alexander, John (Committee member) / Benkert, Volker (Committee member) / Arizona State University (Publisher)
Created2016
Description
In the sixty-seven years following the end of World War II, West Germany and Japan underwent a remarkable series of economic and social changes that irrevocably altered their respective ways of life. Formerly xenophobic, militaristic and highly socially stratified societies, both emerged from the 20th Century as liberal, prosperous and free. Both made great strides well beyond the expectations of their occupiers, and rebounded from the overwhelming destruction of their national economies within a few short decades. While these changes have yielded dramatic results, the wartime period still looms large in their respective collective memories. Therefore, an ongoing and diverse dialectical process would engage the considerable popular, official, and intellectual energy of their post-war generations. In West Germany, the term Vergangenheitsbewältigung (VGB) emerged to describe a process of coming to terms with the past, while the Japanese chose kako no kokufuku to describe their similar historical sojourns. Although intellectuals of widely varying backgrounds in both nations made great strides toward making Japanese and German citizens cognizant of the roles that their militaries played in gruesome atrocities, popular cinematic productions served to reiterate older, discredited assertions of the fundamental honor and innocence of the average soldier, thereby nurturing a historically revisionist line of reasoning that continues to compete for public attention. All forms of media would play an important role in sustaining this “apologetic narrative,” and cinema, among the most popular and visible of these mediums, was not excluded from this. Indeed, films would play a unique recurring role, like rhetorical time capsules, in offering a sanitized historical image of Japanese and German soldiers that continues to endure in modern times. Nevertheless, even as West Germany and Japan regained their sovereignty and re-examined their pasts with ever greater resolution and insight, their respective film industries continued to “reset” the clock, and accentuated the visibility and relevancy of apologetic forces still in existence within both societies. However, it is important to note that, when speaking of “Germans” and “Japanese,” that they are not meant to be thought of as being uniformly of one mind or another. Rather, the use of these words is meant as convenient shorthand to refer to the dominant forces in Japanese and German civil society at any given time over the course of their respective post- war histories. Furthermore, references to “Germany” during the Cold War period are to be understood to mean the Federal Republic of Germany, rather than their socialist counterpart, the German Democratic Republic, a nation that undertook its own coming to terms with the past in an entirely distinct fashion.
ContributorsPiscopo, Michael (Author) / Benkert, Volker (Thesis director) / Moore, Aaron (Committee member) / Machander, Sina (Committee member) / Barrett, The Honors College (Contributor) / College of Liberal Arts and Sciences (Contributor)
Created2012-12
Description
This dissertation focuses on three different efficiency enhancement methods that are applicable to handset applications. These proposed designs are based on three critical requirements for handset application: 1) Small form factor, 2) CMOS compatibility and 3) high power handling. The three presented methodologies are listed below:
1) A transformer-based power combiner architecture for out-phasing transmitters
2) A current steering DAC-based average power tracking circuit for on-chip power amplifiers (PA)
3) A CMOS-based driver stage for GaN-based switched-mode power amplifiers applicable to fully digital transmitters
This thesis highlights the trends in wireless handsets, the motivates the need for fully-integrated CMOS power amplifier solutions and presents the three novel techniques for reconfigurable and digital CMOS-based PAs. Chapter 3, presents the transformer-based power combiner for out-phasing transmitters. The simulation results reveal that this technique is able to shrink the power combiner area, which is one of the largest parts of the transmitter, by about 50% and as a result, enhances the output power density by 3dB.
The average power tracking technique (APT) integrated with an on-chip CMOS-based power amplifier is explained in Chapter 4. This system is able to achieve up to 32dBm saturated output power with a linear power gain of 20dB in a 45nm CMOS SOI process. The maximum efficiency improvement is about ∆η=15% compared to the same PA without APT. Measurement results show that the proposed method is able to amplify an enhanced-EDGE modulated input signal with a data rate of 70.83kb/sec and generate more than 27dBm of average output power with EVM<5%.
Although small form factor, high battery lifetime, and high volume integration motivate the need for fully digital CMOS transmitters, the output power generated by this type of transmitter is not high enough to satisfy the communication standards. As a result, compound materials such as GaN or GaAs are usually being used in handset applications to increase the output power. Chapter 5 focuses on the analysis and design of two CMOS based driver architectures (cascode and house of cards) for driving a GaN power amplifier. The presented results show that the drivers are able to generate ∆Vout=5V, which is required by the compound transistor, and operate up to 2GHz. Since the CMOS driver is expected to drive an off-chip capacitive load, the interface components, such as bond wires, and decoupling and pad capacitors, play a critical role in the output transient response. Therefore, extensive analysis and simulation results have been done on the interface circuits to investigate their effects on RF transmitter performance. The presented results show that the maximum operating frequency when the driver is connected to a 4pF capacitive load is about 2GHz, which is perfectly matched with the reported values in prior literature.
1) A transformer-based power combiner architecture for out-phasing transmitters
2) A current steering DAC-based average power tracking circuit for on-chip power amplifiers (PA)
3) A CMOS-based driver stage for GaN-based switched-mode power amplifiers applicable to fully digital transmitters
This thesis highlights the trends in wireless handsets, the motivates the need for fully-integrated CMOS power amplifier solutions and presents the three novel techniques for reconfigurable and digital CMOS-based PAs. Chapter 3, presents the transformer-based power combiner for out-phasing transmitters. The simulation results reveal that this technique is able to shrink the power combiner area, which is one of the largest parts of the transmitter, by about 50% and as a result, enhances the output power density by 3dB.
The average power tracking technique (APT) integrated with an on-chip CMOS-based power amplifier is explained in Chapter 4. This system is able to achieve up to 32dBm saturated output power with a linear power gain of 20dB in a 45nm CMOS SOI process. The maximum efficiency improvement is about ∆η=15% compared to the same PA without APT. Measurement results show that the proposed method is able to amplify an enhanced-EDGE modulated input signal with a data rate of 70.83kb/sec and generate more than 27dBm of average output power with EVM<5%.
Although small form factor, high battery lifetime, and high volume integration motivate the need for fully digital CMOS transmitters, the output power generated by this type of transmitter is not high enough to satisfy the communication standards. As a result, compound materials such as GaN or GaAs are usually being used in handset applications to increase the output power. Chapter 5 focuses on the analysis and design of two CMOS based driver architectures (cascode and house of cards) for driving a GaN power amplifier. The presented results show that the drivers are able to generate ∆Vout=5V, which is required by the compound transistor, and operate up to 2GHz. Since the CMOS driver is expected to drive an off-chip capacitive load, the interface components, such as bond wires, and decoupling and pad capacitors, play a critical role in the output transient response. Therefore, extensive analysis and simulation results have been done on the interface circuits to investigate their effects on RF transmitter performance. The presented results show that the maximum operating frequency when the driver is connected to a 4pF capacitive load is about 2GHz, which is perfectly matched with the reported values in prior literature.
ContributorsMoallemi, Soroush (Author) / Kitchen, Jennifer (Thesis advisor) / Kiaei, Sayfe (Committee member) / Bakkaloglu, Bertan (Committee member) / Thornton, Trevor (Committee member) / Arizona State University (Publisher)
Created2019