Matching Items (8)
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- All Subjects: Ionizing Radiation
- All Subjects: Electric transformers
- Genre: Academic theses
- Creators: Holbert, Keith E.
- Member of: ASU Electronic Theses and Dissertations
- Resource Type: Text
- Status: Published
Description
Radiation-induced gain degradation in bipolar devices is considered to be the primary threat to linear bipolar circuits operating in the space environment. The damage is primarily caused by charged particles trapped in the Earth's magnetosphere, the solar wind, and cosmic rays. This constant radiation exposure leads to early end-of-life expectancies for many electronic parts. Exposure to ionizing radiation increases the density of oxide and interfacial defects in bipolar oxides leading to an increase in base current in bipolar junction transistors. Radiation-induced excess base current is the primary cause of current gain degradation. Analysis of base current response can enable the measurement of defects generated by radiation exposure. In addition to radiation, the space environment is also characterized by extreme temperature fluctuations. Temperature, like radiation, also has a very strong impact on base current. Thus, a technique for separating the effects of radiation from thermal effects is necessary in order to accurately measure radiation-induced damage in space. This thesis focuses on the extraction of radiation damage in lateral PNP bipolar junction transistors and the space environment. It also describes the measurement techniques used and provides a quantitative analysis methodology for separating radiation and thermal effects on the bipolar base current.
ContributorsCampola, Michael J (Author) / Barnaby, Hugh J (Thesis advisor) / Holbert, Keith E. (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2011
Description
The increased use of commercial complementary metal-oxide-semiconductor (CMOS) technologies in harsh radiation environments has resulted in a new approach to radiation effects mitigation. This approach utilizes simulation to support the design of integrated circuits (ICs) to meet targeted tolerance specifications. Modeling the deleterious impact of ionizing radiation on ICs fabricated in advanced CMOS technologies requires understanding and analyzing the basic mechanisms that result in buildup of radiation-induced defects in specific sensitive regions. Extensive experimental studies have demonstrated that the sensitive regions are shallow trench isolation (STI) oxides. Nevertheless, very little work has been done to model the physical mechanisms that result in the buildup of radiation-induced defects and the radiation response of devices fabricated in these technologies. A comprehensive study of the physical mechanisms contributing to the buildup of radiation-induced oxide trapped charges and the generation of interface traps in advanced CMOS devices is presented in this dissertation. The basic mechanisms contributing to the buildup of radiation-induced defects are explored using a physical model that utilizes kinetic equations that captures total ionizing dose (TID) and dose rate effects in silicon dioxide (SiO2). These mechanisms are formulated into analytical models that calculate oxide trapped charge density (Not) and interface trap density (Nit) in sensitive regions of deep-submicron devices. Experiments performed on field-oxide-field-effect-transistors (FOXFETs) and metal-oxide-semiconductor (MOS) capacitors permit investigating TID effects and provide a comparison for the radiation response of advanced CMOS devices. When used in conjunction with closed-form expressions for surface potential, the analytical models enable an accurate description of radiation-induced degradation of transistor electrical characteristics. In this dissertation, the incorporation of TID effects in advanced CMOS devices into surface potential based compact models is also presented. The incorporation of TID effects into surface potential based compact models is accomplished through modifications of the corresponding surface potential equations (SPE), allowing the inclusion of radiation-induced defects (i.e., Not and Nit) into the calculations of surface potential. Verification of the compact modeling approach is achieved via comparison with experimental data obtained from FOXFETs fabricated in a 90 nm low-standby power commercial bulk CMOS technology and numerical simulations of fully-depleted (FD) silicon-on-insulator (SOI) n-channel transistors.
ContributorsSanchez Esqueda, Ivan (Author) / Barnaby, Hugh J (Committee member) / Schroder, Dieter (Thesis advisor) / Schroder, Dieter K. (Committee member) / Holbert, Keith E. (Committee member) / Gildenblat, Gennady (Committee member) / Arizona State University (Publisher)
Created2011
Description
Recent trends in the electric power industry have led to more attention to optimal operation of power transformers. In a deregulated environment, optimal operation means minimizing the maintenance and extending the life of this critical and costly equipment for the purpose of maximizing profits. Optimal utilization of a transformer can be achieved through the use of dynamic loading. A benefit of dynamic loading is that it allows better utilization of the transformer capacity, thus increasing the flexibility and reliability of the power system. This document presents the progress on a software application which can estimate the maximum time-varying loading capability of transformers. This information can be used to load devices closer to their limits without exceeding the manufacturer specified operating limits. The maximally efficient dynamic loading of transformers requires a model that can accurately predict both top-oil temperatures (TOTs) and hottest-spot temperatures (HSTs). In the previous work, two kinds of thermal TOT and HST models have been studied and used in the application: the IEEE TOT/HST models and the ASU TOT/HST models. And, several metrics have been applied to evaluate the model acceptability and determine the most appropriate models for using in the dynamic loading calculations. In this work, an investigation to improve the existing transformer thermal models performance is presented. Some factors that may affect the model performance such as improper fan status and the error caused by the poor performance of IEEE models are discussed. Additional methods to determine the reliability of transformer thermal models using metrics such as time constant and the model parameters are also provided. A new production grade application for real-time dynamic loading operating purpose is introduced. This application is developed by using an existing planning application, TTeMP, as a start point, which is designed for the dispatchers and load specialists. To overcome the limitations of TTeMP, the new application can perform dynamic loading under emergency conditions, such as loss-of transformer loading. It also has the capability to determine the emergency rating of the transformers for a real-time estimation.
ContributorsZhang, Ming (Author) / Tylavsky, Daniel J (Thesis advisor) / Ayyanar, Raja (Committee member) / Holbert, Keith E. (Committee member) / Arizona State University (Publisher)
Created2013
Description
Flash memories are critical for embedded devices to operate properly but are susceptible to radiation effects, which make flash memory a key factor to improve the reliability of circuitry. This thesis describes the simulation techniques used to analyze and predict total ionizing dose (TID) effects on 90-nm technology Silicon Storage Technology (SST) SuperFlash Generation 3 devices. Silvaco Atlas is used for both device level design and simulation purposes.
The simulations consist of no radiation and radiation modeling. The no radiation modeling details the cell structure development and characterizes basic operations (read, erase and program) of a flash memory cell. The program time is observed to be approximately 10 μs while the erase time is approximately 0.1 ms.
The radiation modeling uses the fixed oxide charge method to analyze the TID effects on the same flash memory cell. After irradiation, a threshold voltage shift of the flash memory cell is observed. The threshold voltages of a programmed cell and an erased cell are reduced at an average rate of 0.025 V/krad.
The use of simulation techniques allows designers to better understand the TID response of a SST flash memory cell and to predict cell level TID effects without performing the costly in-situ irradiation experiments. The simulation and experimental results agree qualitatively. In particular, simulation results reveal that ‘0’ to ‘1’ errors but not ‘1’ to ‘0’ retention errors occur; likewise, ‘0’ to ‘1’ errors dominate experimental testing, which also includes circuitry effects that can cause ‘1’ to ‘0’ failures. Both simulation and experimental results reveal flash memory cell TID resilience to about 200 krad.
The simulations consist of no radiation and radiation modeling. The no radiation modeling details the cell structure development and characterizes basic operations (read, erase and program) of a flash memory cell. The program time is observed to be approximately 10 μs while the erase time is approximately 0.1 ms.
The radiation modeling uses the fixed oxide charge method to analyze the TID effects on the same flash memory cell. After irradiation, a threshold voltage shift of the flash memory cell is observed. The threshold voltages of a programmed cell and an erased cell are reduced at an average rate of 0.025 V/krad.
The use of simulation techniques allows designers to better understand the TID response of a SST flash memory cell and to predict cell level TID effects without performing the costly in-situ irradiation experiments. The simulation and experimental results agree qualitatively. In particular, simulation results reveal that ‘0’ to ‘1’ errors but not ‘1’ to ‘0’ retention errors occur; likewise, ‘0’ to ‘1’ errors dominate experimental testing, which also includes circuitry effects that can cause ‘1’ to ‘0’ failures. Both simulation and experimental results reveal flash memory cell TID resilience to about 200 krad.
ContributorsChen, Yitao (Author) / Holbert, Keith E. (Thesis advisor) / Clark, Lawrence T. (Committee member) / Allee, David R. (Committee member) / Arizona State University (Publisher)
Created2016
Description
The Solid State Transformer (SST) is an essential component in the FREEDM system. This research focuses on the modeling of the SST and the controller hardware in the loop (CHIL) implementation of the SST for the support of the FREEDM system demonstration. The energy based control strategy for a three-stage SST is analyzed and applied. A simplified average model of the three-stage SST that is suitable for simulation in real time digital simulator (RTDS) has been developed in this study. The model is also useful for general time-domain power system analysis and simulation. The proposed simplified av-erage model has been validated in MATLAB and PLECS. The accuracy of the model has been verified through comparison with the cycle-by-cycle average (CCA) model and de-tailed switching model. These models are also implemented in PSCAD, and a special strategy to implement the phase shift modulation has been proposed to enable the switching model simulation in PSCAD. The implementation of the CHIL test environment of the SST in RTDS is described in this report. The parameter setup of the model has been discussed in detail. One of the dif-ficulties is the choice of the damping factor, which is revealed in this paper. Also the grounding of the system has large impact on the RTDS simulation. Another problem is that the performance of the system is highly dependent on the switch parameters such as voltage and current ratings. Finally, the functionalities of the SST have been realized on the platform. The distributed energy storage interface power injection and reverse power flow have been validated. Some limitations are noticed and discussed through the simulation on RTDS.
ContributorsJiang, Youyuan (Author) / Ayyanar, Raja (Thesis advisor) / Holbert, Keith E. (Committee member) / Chowdhury, Srabanti (Committee member) / Arizona State University (Publisher)
Created2014
Description
t temperature (HST) and top-oil temperature (TOT) are reliable indicators of the insulation temperature. The objective of this project is to use thermal models to estimate the transformer's maximum dynamic loading capacity without violating the HST and TOT thermal limits set by the operator. In order to ensure the optimal loading, the temperature predictions of the thermal models need to be accurate. A number of transformer thermal models are available in the literature. In present practice, the IEEE Clause 7 model is used by the industry to make these predictions. However, a linear regression based thermal model has been observed to be more accurate than the IEEE model. These two models have been studied in this work.
This document presents the research conducted to discriminate between reliable and unreliable models with the help of certain metrics. This was done by first eyeballing the prediction performance and then evaluating a number of mathematical metrics. Efforts were made to recognize the cause behind an unreliable model. Also research was conducted to improve the accuracy of the performance of the existing models.
A new application, described in this document, has been developed to automate the process of building thermal models for multiple transformers. These thermal models can then be used for transformer dynamic loading.
This document presents the research conducted to discriminate between reliable and unreliable models with the help of certain metrics. This was done by first eyeballing the prediction performance and then evaluating a number of mathematical metrics. Efforts were made to recognize the cause behind an unreliable model. Also research was conducted to improve the accuracy of the performance of the existing models.
A new application, described in this document, has been developed to automate the process of building thermal models for multiple transformers. These thermal models can then be used for transformer dynamic loading.
ContributorsRao, Shruti Dwarkanath (Author) / Tylavsky, Daniel J (Thesis advisor) / Holbert, Keith E. (Committee member) / Karady, George G. (Committee member) / Arizona State University (Publisher)
Created2014
Description
Non-volatile memory (NVM) has become a staple in the everyday life of consumers. NVM manifests inside cell phones, laptops, and most recently, wearable tech such as smart watches. NAND Flash has been an excellent solution to conditions requiring fast, compact NVM. Current technology nodes are nearing the physical limits of scaling, preventing flash from improving. To combat the limitations of flash and to appease consumer demand for progressively faster and denser NVM, new technologies are needed. One possible candidate for the replacement of NAND Flash is programmable metallization cells (PMC). PMC are a type of resistive memory, meaning that they do not rely on charge storage to maintain a logic state. Depending on their application, it is possible that devices containing NVM will be exposed to harsh radiation environments. As part of the process for developing a novel memory technology, it is important to characterize the effects irradiation has on the functionality of the devices.
This thesis characterizes the effects that ionizing γ-ray irradiation has on the retention of the programmed resistive state of a PMC. The PMC devices tested used Ge30Se70 doped with Ag as the solid electrolyte layer and were fabricated by the thesis author in a Class 100 clean room. Individual device tiles were wire bonded into ceramic packages and tested in a biased and floating contact scenario.
The first scenario presented shows that PMC devices are capable of retaining their programmed state up to the maximum exposed total ionizing dose (TID) of 3.1 Mrad(Si). In this first scenario, the contacts of the PMC devices were left floating during exposure. The second scenario tested shows that the PMC devices are capable of retaining their state until the maximum TID of 10.1 Mrad(Si) was reached. The contacts in the second scenario were biased, with a 50 mV read voltage applied to the anode contact. Analysis of the results show that Ge30Se70 PMC are ionizing radiation tolerant and can retain a programmed state to a higher TID than NAND Flash memory.
This thesis characterizes the effects that ionizing γ-ray irradiation has on the retention of the programmed resistive state of a PMC. The PMC devices tested used Ge30Se70 doped with Ag as the solid electrolyte layer and were fabricated by the thesis author in a Class 100 clean room. Individual device tiles were wire bonded into ceramic packages and tested in a biased and floating contact scenario.
The first scenario presented shows that PMC devices are capable of retaining their programmed state up to the maximum exposed total ionizing dose (TID) of 3.1 Mrad(Si). In this first scenario, the contacts of the PMC devices were left floating during exposure. The second scenario tested shows that the PMC devices are capable of retaining their state until the maximum TID of 10.1 Mrad(Si) was reached. The contacts in the second scenario were biased, with a 50 mV read voltage applied to the anode contact. Analysis of the results show that Ge30Se70 PMC are ionizing radiation tolerant and can retain a programmed state to a higher TID than NAND Flash memory.
ContributorsTaggart, Jennifer Lynn (Author) / Barnaby, Hugh (Thesis advisor) / Kozicki, Michael (Committee member) / Holbert, Keith E. (Committee member) / Arizona State University (Publisher)
Created2015
Description
Total dose sensing systems (or radiation detection systems) have many applications,
ranging from survey monitors used to supervise the generated radioactive waste at
nuclear power plants to personal dosimeters which measure the radiation dose
accumulated in individuals. This dissertation work will present two different types of
novel devices developed at Arizona State University for total dose sensing applications.
The first detector technology is a mechanically flexible metal-chalcogenide glass (ChG)
based system which is fabricated on low cost substrates and are intended as disposable
total dose sensors. Compared to existing commercial technologies, these thin film
radiation sensors are simpler in form and function, and cheaper to produce and operate.
The sensors measure dose through resistance change and are suitable for applications
such as reactor dosimetry, radiation chemistry, and clinical dosimetry. They are ideal for
wearable devices due to the lightweight construction, inherent robustness to resist
breaking when mechanically stressed, and ability to attach to non-flat objects. Moreover,
their performance can be easily controlled by tuning design variables and changing
incorporated materials. The second detector technology is a wireless dosimeter intended
for remote total dose sensing. They are based on a capacitively loaded folded patch
antenna resonating in the range of 3 GHz to 8 GHz for which the load capacitance varies
as a function of total dose. The dosimeter does not need power to operate thus enabling
its use and implementation in the field without requiring a battery for its read-out. As a
result, the dosimeter is suitable for applications such as unattended detection systems
destined for covert monitoring of merchandise crossing borders, where nuclear material
tracking is a concern. The sensitive element can be any device exhibiting a known
variation of capacitance with total ionizing dose. The sensitivity of the dosimeter is
related to the capacitance variation of the radiation sensitive device as well as the high
frequency system used for reading. Both technologies come with the advantage that they
are easy to manufacture with reasonably low cost and sensing can be readily read-out.
ranging from survey monitors used to supervise the generated radioactive waste at
nuclear power plants to personal dosimeters which measure the radiation dose
accumulated in individuals. This dissertation work will present two different types of
novel devices developed at Arizona State University for total dose sensing applications.
The first detector technology is a mechanically flexible metal-chalcogenide glass (ChG)
based system which is fabricated on low cost substrates and are intended as disposable
total dose sensors. Compared to existing commercial technologies, these thin film
radiation sensors are simpler in form and function, and cheaper to produce and operate.
The sensors measure dose through resistance change and are suitable for applications
such as reactor dosimetry, radiation chemistry, and clinical dosimetry. They are ideal for
wearable devices due to the lightweight construction, inherent robustness to resist
breaking when mechanically stressed, and ability to attach to non-flat objects. Moreover,
their performance can be easily controlled by tuning design variables and changing
incorporated materials. The second detector technology is a wireless dosimeter intended
for remote total dose sensing. They are based on a capacitively loaded folded patch
antenna resonating in the range of 3 GHz to 8 GHz for which the load capacitance varies
as a function of total dose. The dosimeter does not need power to operate thus enabling
its use and implementation in the field without requiring a battery for its read-out. As a
result, the dosimeter is suitable for applications such as unattended detection systems
destined for covert monitoring of merchandise crossing borders, where nuclear material
tracking is a concern. The sensitive element can be any device exhibiting a known
variation of capacitance with total ionizing dose. The sensitivity of the dosimeter is
related to the capacitance variation of the radiation sensitive device as well as the high
frequency system used for reading. Both technologies come with the advantage that they
are easy to manufacture with reasonably low cost and sensing can be readily read-out.
ContributorsMahmud, Adnan, Ph.D (Author) / Barnaby, Hugh J. (Thesis advisor) / Kozicki, Michael N (Committee member) / Gonzalez-Velo, Yago (Committee member) / Goryll, Michael (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2017