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Description
Class D Amplifiers are widely used in portable systems such as mobile phones to achieve high efficiency. The demands of portable electronics for low power consumption to extend battery life and reduce heat dissipation mandate efficient, high-performance audio amplifiers. The high efficiency of Class D amplifiers (CDAs) makes them particularly

Class D Amplifiers are widely used in portable systems such as mobile phones to achieve high efficiency. The demands of portable electronics for low power consumption to extend battery life and reduce heat dissipation mandate efficient, high-performance audio amplifiers. The high efficiency of Class D amplifiers (CDAs) makes them particularly attractive for portable applications. The Digital class D amplifier is an interesting solution to increase the efficiency of embedded systems. However, this solution is not good enough in terms of PWM stage linearity and power supply rejection. An efficient control is needed to correct the error sources in order to get a high fidelity sound quality in the whole audio range of frequencies. A fundamental analysis on various error sources due to non idealities in the power stage have been discussed here with key focus on Power supply perturbations driving the Power stage of a Class D Audio Amplifier. Two types of closed loop Digital Class D architecture for PSRR improvement have been proposed and modeled. Double sided uniform sampling modulation has been used. One of the architecture uses feedback around the power stage and the second architecture uses feedback into digital domain. Simulation & experimental results confirm that the closed loop PSRR & PS-IMD improve by around 30-40 dB and 25 dB respectively.
ContributorsChakraborty, Bijeta (Author) / Bakkaloglu, Bertan (Thesis advisor) / Garrity, Douglas (Committee member) / Ozev, Sule (Committee member) / Arizona State University (Publisher)
Created2012
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Description
Due to high level of integration in RF System on Chip (SOC), the test access points are limited to the baseband and RF inputs/outputs of the system. This limited access poses a big challenge particularly for advanced RF architectures where calibration of internal parameters is necessary and ensure proper operation.

Due to high level of integration in RF System on Chip (SOC), the test access points are limited to the baseband and RF inputs/outputs of the system. This limited access poses a big challenge particularly for advanced RF architectures where calibration of internal parameters is necessary and ensure proper operation. Therefore low-overhead built-in Self-Test (BIST) solution for advanced RF transceiver is proposed. In this dissertation. Firstly, comprehensive BIST solution for RF polar transceivers using on-chip resources is presented. In the receiver, phase and gain mismatches degrade sensitivity and error vector magnitude (EVM). In the transmitter, delay skew between the envelope and phase signals and the finite envelope bandwidth can create intermodulation distortion (IMD) that leads to violation of spectral mask requirements. Characterization and calibration of these parameters with analytical model would reduce the test time and cost considerably. Hence, a technique to measure and calibrate impairments of the polar transceiver in the loop-back mode is proposed.

Secondly, robust amplitude measurement technique for RF BIST application and BIST circuits for loop-back connection are discussed. Test techniques using analytical model are explained and BIST circuits are introduced.

Next, a self-compensating built-in self-test solution for RF Phased Array Mismatch is proposed. In the proposed method, a sinusoidal test signal with unknown amplitude is applied to the inputs of two adjacent phased array elements and measure the baseband output signal after down-conversion. Mathematical modeling of the circuit impairments and phased array behavior indicates that by using two distinct input amplitudes, both of which can remain unknown, it is possible to measure the important parameters of the phased array, such as gain and phase mismatch. In addition, proposed BIST system is designed and fabricated using IBM 180nm process and a prototype four-element phased-array PCB is also designed and fabricated for verifying the proposed method.

Finally, process independent gain measurement via BIST/DUT co-design is explained. Design methodology how to reduce performance impact significantly is discussed.

Simulation and hardware measurements results for the proposed techniques show that the proposed technique can characterize the targeted impairments accurately.
ContributorsJeong, Jae Woong (Author) / Ozev, Sule (Thesis advisor) / Kitchen, Jennifer (Committee member) / Cao, Yu (Committee member) / Ogras, Umit Y. (Committee member) / Arizona State University (Publisher)
Created2015
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Description
As integrated technologies are scaling down, there is an increasing trend in the

process,voltage and temperature (PVT) variations of highly integrated RF systems.

Accounting for these variations during the design phase requires tremendous amount

of time for prediction of RF performance and optimizing it accordingly. Thus, there

is an increasing gap between the need

As integrated technologies are scaling down, there is an increasing trend in the

process,voltage and temperature (PVT) variations of highly integrated RF systems.

Accounting for these variations during the design phase requires tremendous amount

of time for prediction of RF performance and optimizing it accordingly. Thus, there

is an increasing gap between the need to relax the RF performance requirements at

the design phase for rapid development and the need to provide high performance

and low cost RF circuits that function with PVT variations. No matter how care-

fully designed, RF integrated circuits (ICs) manufactured with advanced technology

nodes necessitate lengthy post-production calibration and test cycles with expensive

RF test instruments. Hence design-for-test (DFT) is proposed for low-cost and fast

measurement of performance parameters during both post-production and in-eld op-

eration. For example, built-in self-test (BIST) is a DFT solution for low-cost on-chip

measurement of RF performance parameters. In this dissertation, three aspects of

automated test and calibration, including DFT mathematical model, BIST hardware

and built-in calibration are covered for RF front-end blocks.

First, the theoretical foundation of a post-production test of RF integrated phased

array antennas is proposed by developing the mathematical model to measure gain

and phase mismatches between antenna elements without any electrical contact. The

proposed technique is fast, cost-efficient and uses near-field measurement of radiated

power from antennas hence, it requires single test setup, it has easy implementation

and it is short in time which makes it viable for industrialized high volume integrated

IC production test.

Second, a BIST model intended for the characterization of I/Q offset, gain and

phase mismatch of IQ transmitters without relying on external equipment is intro-

duced. The proposed BIST method is based on on-chip amplitude measurement as

in prior works however,here the variations in the BIST circuit do not affect the target

parameter estimation accuracy since measurements are designed to be relative. The

BIST circuit is implemented in 130nm technology and can be used for post-production

and in-field calibration.

Third, a programmable low noise amplifier (LNA) is proposed which is adaptable

to different application scenarios depending on the specification requirements. Its

performance is optimized with regards to required specifications e.g. distance, power

consumption, BER, data rate, etc.The statistical modeling is used to capture the

correlations among measured performance parameters and calibration modes for fast

adaptation. Machine learning technique is used to capture these non-linear correlations and build the probability distribution of a target parameter based on measurement results of the correlated parameters. The proposed concept is demonstrated by

embedding built-in tuning knobs in LNA design in 130nm technology. The tuning

knobs are carefully designed to provide independent combinations of important per-

formance parameters such as gain and linearity. Minimum number of switches are

used to provide the desired tuning range without a need for an external analog input.
ContributorsShafiee, Maryam (Author) / Ozev, Sule (Thesis advisor) / Diaz, Rodolfo (Committee member) / Ogras, Umit Y. (Committee member) / Bakkaloglu, Bertan (Committee member) / Arizona State University (Publisher)
Created2018
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Description
Testing and calibration constitute a significant part of the overall manufacturing cost of microelectromechanical system (MEMS) devices. Developing a low-cost testing and calibration scheme applicable at the user side that ensures the continuous reliability and accuracy is a crucial need. The main purpose of testing is to eliminate defective devices

Testing and calibration constitute a significant part of the overall manufacturing cost of microelectromechanical system (MEMS) devices. Developing a low-cost testing and calibration scheme applicable at the user side that ensures the continuous reliability and accuracy is a crucial need. The main purpose of testing is to eliminate defective devices and to verify the qualifications of a product is met. The calibration process for capacitive MEMS devices, for the most part, entails the determination of the mechanical sensitivity. In this work, a physical-stimulus-free built-in-self-test (BIST) integrated circuit (IC) design characterizing the sensitivity of capacitive MEMS accelerometers is presented. The BIST circuity can extract the amplitude and phase response of the acceleration sensor's mechanics under electrical excitation within 0.55% of error with respect to its mechanical sensitivity under the physical stimulus. Sensitivity characterization is performed using a low computation complexity multivariate linear regression model. The BIST circuitry maximizes the use of existing analog and mixed-signal readout signal chain and the host processor core, without the need for computationally expensive Fast Fourier Transform (FFT)-based approaches. The BIST IC is designed and fabricated using the 0.18-µm CMOS technology. The sensor analog front-end and BIST circuitry are integrated with a three-axis, low-g capacitive MEMS accelerometer in a single hermetically sealed package. The BIST circuitry occupies 0.3 mm2 with a total readout IC area of 1.0 mm2 and consumes 8.9 mW during self-test operation.
ContributorsOzel, Muhlis Kenan (Author) / Bakkaloglu, Bertan (Thesis advisor) / Ozev, Sule (Thesis advisor) / Kiaei, Sayfe (Committee member) / Ogras, Umit Y. (Committee member) / Arizona State University (Publisher)
Created2017
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Description
Micro Electro Mechanical Systems (MEMS) based accelerometers are one of the most commonly used sensors out there. They are used in devices such as, airbags, smartphones, airplanes, and many more. Although they are very accurate, they degrade with time or get offset due to some damage. To fix this, they

Micro Electro Mechanical Systems (MEMS) based accelerometers are one of the most commonly used sensors out there. They are used in devices such as, airbags, smartphones, airplanes, and many more. Although they are very accurate, they degrade with time or get offset due to some damage. To fix this, they must be calibrated again using physical calibration technique, which is an expensive process to conduct. However, these sensors can also be calibrated infield by applying an on-chip electrical stimulus to the sensor. Electrical stimulus-based calibration could bring the cost of testing and calibration significantly down as compared to factory testing. In this thesis, simulations are presented to formulate a statistical prediction model based on an electrical stimulus. Results from two different approaches of electrical calibration have been discussed. A prediction model with a root mean square error of 1% has been presented in this work. Experiments were conducted on commercially available accelerometers to test the techniques used for simulations.
ContributorsBassi, Ishaan (Author) / Ozev, Sule (Thesis advisor) / Christen, Jennifer Blain (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2020
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Description
Recent advancements in communication standards, such as 5G demand transmitter hardware to support high data rates with high energy efficiency. With the revolution of communication standards, modulation schemes have become more complex and require high peak-to-average (PAPR) signals. In wireless transceiver hardware, the power amplifier (PA) consumes most of the

Recent advancements in communication standards, such as 5G demand transmitter hardware to support high data rates with high energy efficiency. With the revolution of communication standards, modulation schemes have become more complex and require high peak-to-average (PAPR) signals. In wireless transceiver hardware, the power amplifier (PA) consumes most of the transceiver’s DC power and is typically the bottleneck for transmitter linearity. Therefore, the transmitter’s performance directly depends on the PA. To support high PAPR signals, the PA must operate efficiently at its saturated and backoff output power. Maintaining high efficiency at both peak and backoff output power is challenging. One effective technique for addressing this problem is load modulation. Some of the prominent load-modulated PA architectures are outphasing PAs, load-modulated balanced amplifiers (LMBA), envelope elimination and restoration (EER), envelope tracking (ET), Doherty power amplifiers (DPA), and polar transmitters. Amongst them, the DPA is the most popular for infrastructure applications due to its simpler architecture compared to other techniques and linearizability with digital pre-distortion (DPD). Another crucial characteristic of progressing communication standards is wide signal bandwidths. High-efficiency power amplifiers like class J/F/F-1 and load-modulated PAs like the DPA exhibit narrowband performance because the amplifiers require precise output impedance terminations. Therefore, it is equally essential to develop adaptable PA solutions to process radio frequency (RF) signals with wide bandwidths. To support modern and future cellular infrastructure, RF PAs need to be innovated to increase the backoff power efficiency by two times or more and support ten times or more wider bandwidths than current state-of-the-art PAs. This work presents five RF PA analyses and implementations to support future wireless communications transmitter hardware. Chapter 2 presents an optimized output-matching network analysis and design to achieve extended output power backoff of the DPA. Chapters 3 and 4 unveil two bandwidth enhancement techniques for the DPA while maintaining extended output power backoff. Chapter 5 exhibits a dual-band hybrid mode PA design targeted for wideband applications. Chapter 6 presents a built-in self-test circuit integrated into a PA for output impedance monitoring. This can alleviate the PA performance degradation due to the variation in the PA's output load over frequency, process, and aging. All RF PAs in this dissertation are implemented using Gallium Nitride (GaN)-based high electron mobility transistors (HEMT), and the realized designs validate the proposed PAs' theories/architectures.
ContributorsRoychowdhury, Debatrayee (Author) / Kitchen, Jennifer (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Ozev, Sule (Committee member) / Aberle, James (Committee member) / Arizona State University (Publisher)
Created2024