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- All Subjects: Power Electronics
- Creators: Ayyanar, Raja
- Creators: Ponce, Fernando A.
Description
This dissertation presents a new hybrid fault current limiter (FCL) topology that is primarily intended to protect single-phase power equipment. It can however be extended to protect three phase systems but would need three devices to protect each individual phase. In comparison against the existing fault current limiter technology, the salient fea-tures of the proposed topology are: a) provides variable impedance that provides a 50% reduction in prospective fault current; b) near instantaneous response time which is with-in the first half cycle (1-4 ms); c) the use of semiconductor switches as the commutating switch which produces reduced leakage current, reduced losses, improved reliability, and a faster switch time (ns-µs); d) zero losses in steady-state operation; e) use of a Neodym-ium (NdFeB) permanent magnet as the limiting impedance which reduces size, cost, weight, eliminates DC biasing and cooling costs; f) use of Pulse Width Modulation (PWM) to control the magnitude of the fault current to a user's desired level. g) experi-mental test system is developed and tested to prove the concepts of the proposed FCL. This dissertation presents the proposed topology and its working principle backed up with numerical verifications, simulation results, and hardware implementation results. Conclu-sions and future work are also presented.
ContributorsPrigmore, Jay (Author) / Karady, George G. (Thesis advisor) / Ayyanar, Raja (Committee member) / Holbert, Keith E. (Committee member) / Hedman, Kory (Committee member) / Arizona State University (Publisher)
Created2013
Description
A new photovoltaic (PV) array power converter circuit is presented. The salient features of this inverter are: transformerless topology, grounded PV array, and only film capacitors. The motivations are to reduce cost, eliminate leakage ground currents, and improve reliability. The use of Silicon Carbide (SiC) transistors is the key enabling technology for this particular circuit to attain good efficiency.
Traditionally, grid connected PV inverters required a transformer for isolation and safety. The disadvantage of high frequency transformer based inverters is complexity and cost. Transformerless inverters have become more popular recently, although they can be challenging to implement because of possible high frequency currents through the PV array's stay capacitance to earth ground. Conventional PV inverters also typically utilize electrolytic capacitors for bulk power buffering. However such capacitors can be prone to decreased reliability.
The solution proposed here to solve these problems is a bi directional buck boost converter combined with half bridge inverters. This configuration enables grounding of the array's negative terminal and passive power decoupling with only film capacitors.
Several aspects of the proposed converter are discussed. First a literature review is presented on the issues to be addressed. The proposed circuit is then presented and examined in detail. This includes theory of operation, component selection, and control systems. An efficiency analysis is also conducted. Simulation results are then presented that show correct functionality. A hardware prototype is built and experiment results also prove the concept. Finally some further developments are mentioned.
As a summary of the research a new topology and control technique were developed. The resultant circuit is a high performance transformerless PV inverter with upwards of 97% efficiency.
Traditionally, grid connected PV inverters required a transformer for isolation and safety. The disadvantage of high frequency transformer based inverters is complexity and cost. Transformerless inverters have become more popular recently, although they can be challenging to implement because of possible high frequency currents through the PV array's stay capacitance to earth ground. Conventional PV inverters also typically utilize electrolytic capacitors for bulk power buffering. However such capacitors can be prone to decreased reliability.
The solution proposed here to solve these problems is a bi directional buck boost converter combined with half bridge inverters. This configuration enables grounding of the array's negative terminal and passive power decoupling with only film capacitors.
Several aspects of the proposed converter are discussed. First a literature review is presented on the issues to be addressed. The proposed circuit is then presented and examined in detail. This includes theory of operation, component selection, and control systems. An efficiency analysis is also conducted. Simulation results are then presented that show correct functionality. A hardware prototype is built and experiment results also prove the concept. Finally some further developments are mentioned.
As a summary of the research a new topology and control technique were developed. The resultant circuit is a high performance transformerless PV inverter with upwards of 97% efficiency.
ContributorsBreazeale, Lloyd C (Author) / Ayyanar, Raja (Thesis advisor) / Karady, George G. (Committee member) / Tylavsky, Daniel (Committee member) / Tsakalis, Konstantinos (Committee member) / Arizona State University (Publisher)
Created2014
Description
After a major disturbance, the power system response is highly dependent on protection schemes and system dynamics. Improving power systems situational awareness requires proper and simultaneous modeling of both protection schemes and dynamic characteristics in power systems analysis tools. Historical information and ex-post analysis of blackouts reaffirm the critical role of protective devices in cascading events, thereby confirming the necessity to represent protective functions in transient stability studies. This dissertation is aimed at studying the importance of representing protective relays in power system dynamic studies. Although modeling all of the protective relays within transient stability studies may result in a better estimation of system behavior, representing, updating, and maintaining the protection system data becomes an insurmountable task. Inappropriate or outdated representation of the relays may result in incorrect assessment of the system behavior. This dissertation presents a systematic method to determine essential relays to be modeled in transient stability studies. The desired approach should identify protective relays that are critical for various operating conditions and contingencies. The results of the transient stability studies confirm that modeling only the identified critical protective relays is sufficient to capture system behavior for various operating conditions and precludes the need to model all of the protective relays. Moreover, this dissertation proposes a method that can be implemented to determine the appropriate location of out-of-step blocking relays. During unstable power swings, a generator or group of generators may accelerate or decelerate leading to voltage depression at the electrical center along with generator tripping. This voltage depression may cause protective relay mis-operation and unintentional separation of the system. In order to avoid unintentional islanding, the potentially mis-operating relays should be blocked from tripping with the use of out-of-step blocking schemes. Blocking these mis-operating relays, combined with an appropriate islanding scheme, help avoid a system wide collapse. The proposed method is tested on data from the Western Electricity Coordinating Council. A triple line outage of the California-Oregon Intertie is studied. The results show that the proposed method is able to successfully identify proper locations of out-of-step blocking scheme.
ContributorsHedman, Mojdeh Khorsand (Author) / Vittal, Vijay (Thesis advisor) / Ayyanar, Raja (Committee member) / Pal, Anamitra (Committee member) / Qin, Jiangchao (Committee member) / Arizona State University (Publisher)
Created2017
Description
This thesis investigates different unidirectional topologies for the on-board charger in an electric vehicle and proposes soft-switching solutions in both the AC/DC and DC/DC stage of the converter with a power rating of 3.3 kW. With an overview on different charger topologies and their applicability with respect to the target specification a soft-switching technique to reduce the switching losses of a single phase boost-type PFC is proposed. This work is followed by a modification to the popular soft-switching topology, the dual active bridge (DAB) converter for application requiring unidirectional power flow. The topology named as the semi-dual active bridge (S-DAB) is obtained by replacing the fully active (four switches) bridge on the load side of a DAB by a semi-active (two switches and two diodes) bridge. The operating principles, waveforms in different intervals and expression for power transfer, which differ significantly from the basic DAB topology, are presented in detail. The zero-voltage switching (ZVS) characteristics and requirements are analyzed in detail and compared to those of DAB. A small-signal model of the new configuration is also derived. The analysis and performance of S-DAB are validated through extensive simulation and experimental results from a hardware prototype.
Secondly, a low-loss auxiliary circuit for a power factor correction (PFC) circuit to achieve zero voltage transition is also proposed to improve the efficiency and operating frequency of the converter. The high dynamic energy generated in the switching node during turn-on is diverted by providing a parallel path through an auxiliary inductor and a transistor placed across the main inductor. The paper discusses the operating principles, design, and merits of the proposed scheme with hardware validation on a 3.3 kW/ 500 kHz PFC prototype. Modifications to the proposed zero voltage transition (ZVT) circuit is also investigated by implementing two topological variations. Firstly, an integrated magnetic structure is built combining the main inductor and auxiliary inductor in a single core reducing the total footprint of the circuit board. This improvement also reduces the size of the auxiliary capacitor required in the ZVT operation. The second modification redirects the ZVT energy from the input end to the DC link through additional half-bridge circuit and inductor. The half-bridge operating at constant 50% duty cycle simulates a switching leg of the following DC/DC stage of the converter. A hardware prototype of the above-mentioned PFC and DC/DC stage was developed and the operating principles were verified using the same.
Secondly, a low-loss auxiliary circuit for a power factor correction (PFC) circuit to achieve zero voltage transition is also proposed to improve the efficiency and operating frequency of the converter. The high dynamic energy generated in the switching node during turn-on is diverted by providing a parallel path through an auxiliary inductor and a transistor placed across the main inductor. The paper discusses the operating principles, design, and merits of the proposed scheme with hardware validation on a 3.3 kW/ 500 kHz PFC prototype. Modifications to the proposed zero voltage transition (ZVT) circuit is also investigated by implementing two topological variations. Firstly, an integrated magnetic structure is built combining the main inductor and auxiliary inductor in a single core reducing the total footprint of the circuit board. This improvement also reduces the size of the auxiliary capacitor required in the ZVT operation. The second modification redirects the ZVT energy from the input end to the DC link through additional half-bridge circuit and inductor. The half-bridge operating at constant 50% duty cycle simulates a switching leg of the following DC/DC stage of the converter. A hardware prototype of the above-mentioned PFC and DC/DC stage was developed and the operating principles were verified using the same.
ContributorsKulasekaran, Siddharth (Author) / Ayyanar, Raja (Thesis advisor) / Karady, George G. (Committee member) / Qin, Jiangchao (Committee member) / Lei, Qin (Committee member) / Arizona State University (Publisher)
Created2017
Description
Alternate sources of energy such as wind, solar photovoltaic and fuel cells are coupled to the power grid with the help of solid state converters. Continued deregulation of the power sector coupled with favorable government incentives has resulted in the rapid growth of renewable energy sources connected to the distribution system at a voltage level of 34.5kV or below. Of late, many utilities are also investing in these alternate sources of energy with the point of interconnection with the power grid being at the transmission level. These converter interfaced generation along with their associated control have the ability to provide the advantage of fast control of frequency, voltage, active, and reactive power. However, their ability to provide stability in a large system is yet to be investigated in detail. This is the primary objective of this research.
In the future, along with an increase in the percentage of converter interfaced renewable energy sources connected to the transmission network, there exists a possibility of even connecting synchronous machines to the grid through converters. Thus, all sources of energy can be expected to be coupled to the grid through converters. The control and operation of such a grid will be unlike anything that has been encountered till now. In this dissertation, the operation and behavior of such a grid will be investigated. The first step in such an analysis will be to build an accurate and simple mathematical model to represent the corresponding components in commercial software. Once this bridge has been crossed, conventional machines will be replaced with their solid state interfaced counterparts in a phased manner. At each stage, attention will be devoted to the control of these sources and also on the stability performance of the large power system.
This dissertation addresses various concerns regarding the control and operation of a futuristic power grid. In addition, this dissertation also aims to address the issue of whether a requirement may arise to redefine operational reliability criteria based on the results obtained.
In the future, along with an increase in the percentage of converter interfaced renewable energy sources connected to the transmission network, there exists a possibility of even connecting synchronous machines to the grid through converters. Thus, all sources of energy can be expected to be coupled to the grid through converters. The control and operation of such a grid will be unlike anything that has been encountered till now. In this dissertation, the operation and behavior of such a grid will be investigated. The first step in such an analysis will be to build an accurate and simple mathematical model to represent the corresponding components in commercial software. Once this bridge has been crossed, conventional machines will be replaced with their solid state interfaced counterparts in a phased manner. At each stage, attention will be devoted to the control of these sources and also on the stability performance of the large power system.
This dissertation addresses various concerns regarding the control and operation of a futuristic power grid. In addition, this dissertation also aims to address the issue of whether a requirement may arise to redefine operational reliability criteria based on the results obtained.
ContributorsRamasubramanian, Deepak (Author) / Vittal, Vijay (Thesis advisor) / Undrill, John (Committee member) / Ayyanar, Raja (Committee member) / Qin, Jiangchao (Committee member) / Arizona State University (Publisher)
Created2017
Description
Optical Instrument Transformers (OIT) have been developed as an alternative to traditional instrument transformers (IT). The question "Can optical instrument transformers substitute for the traditional transformers?" is the main motivation of this study. Finding the answer for this question and developing complete models are the contributions of this work. Dedicated test facilities are developed so that the steady state and transient performances of analog outputs of a magnetic current transformer (CT) and a magnetic voltage transformer (VT) are compared with that of an optical current transformer (OCT) and an optical voltage transformer (OVT) respectively. Frequency response characteristics of OIT outputs are obtained. Comparison results show that OITs have a specified accuracy of 0.3% in all cases. They are linear, and DC offset does not saturate the systems. The OIT output signal has a 40~60 μs time delay, but this is typically less than the equivalent phase difference permitted by the IEEE and IEC standards for protection applications. Analog outputs have significantly higher bandwidths (adjustable to 20 to 40 kHz) than the IT. The digital output signal bandwidth (2.4 kHz) of an OCT is significantly lower than the analog signal bandwidth (20 kHz) due to the sampling rates involved. The OIT analog outputs may have significant white noise of 6%, but the white noise does not affect accuracy or protection performance. Temperatures up to 50oC do not adversely affect the performance of the OITs. Three types of models are developed for analog outputs: analog, digital, and complete models. Well-known mathematical methods, such as network synthesis and Jones calculus methods are applied. The developed models are compared with experiment results and are verified with simulation programs. Results show less than 1.5% for OCT and 2% for OVT difference and that the developed models can be used for power system simulations and the method used for the development can be used to develop models for all other brands of optical systems. The communication and data transfer between the all-digital protection systems is investigated by developing a test facility for all digital protection systems. Test results show that different manufacturers' relays and transformers based on the IEC standard can serve the power system successfully.
ContributorsKucuksari, Sadik (Author) / Karady, George G. (Thesis advisor) / Heydt, Gerald T (Committee member) / Holbert, Keith E. (Committee member) / Ayyanar, Raja (Committee member) / Farmer, Richard (Committee member) / Arizona State University (Publisher)
Created2010
Description
DC-DC converters are widely employed to interface one voltage level with another through step-up or step-down operation. In recent years, step-up DC-DC converters have been a key component in harnessing energy through renewable sources by providing an interface to integrate low voltage systems to DC-AC converters or microgrids. They find increasing applications in battery and fuel cell electric vehicles which can benefit from high and variable DC link voltage. It is important to optimize these converters for higher efficiency while achieving high gain and high power density. Non-isolated DC-DC converters are an attractive option due to the reduced complexity of magnetic design, smaller size, and lower cost. However, in these topologies, achieving a very high gain along with high efficiency has been a challenge. This work encompasses different non-isolated high gain DC-DC converters for electric vehicle and renewable energy applications. The converter topologies proposed in this work can easily achieve a conversion ratio above 20 with lower voltage and current stress across devices. For applications requiring wide input or output voltage range, different control schemes, as well as modified converter configurations, are proposed. Moreover, the converter performance is optimized by employing wide band-gap devices-based hardware prototypes. It enables higher switching frequency operation with lower switching losses. In recent times, multiple soft-switching techniques have been introduced which enable higher switching frequency operation by minimizing the switching loss. This work also discusses different soft-switching mechanisms for the high conversion ratio converter and the proposed mechanism improves the converter efficiency significantly while reducing the inductor size. Further, a novel electric vehicle traction architecture with low voltage battery and multi-input high gain DC-DC converter is introduced in this work. The proposed architecture with multiple 48 V battery packs and integrated, multi-input, high conversion ratio DC-DC converters, can reduce the maximum voltage in the vehicle during emergencies to 48 V, mitigate cell balancing issues in battery, and provide a wide variable DC link voltage. The implementation of high conversion ratio converter in multiple configurations for the proposed architecture has been discussed in detail and the proposed converter operation is validated experimentally through a scaled hardware prototype.
ContributorsGupta, Ankul (Author) / Ayyanar, Raja (Thesis advisor) / Lei, Qin (Committee member) / Bakkaloglu, Bertan (Committee member) / Ranjram, Mike (Committee member) / Arizona State University (Publisher)
Created2022
Description
As the world becomes more electronic, power electronics designers have continuously designed more efficient converters. However, with the rising number of nonlinear loads (i.e. electronics) attached to the grid, power quality concerns, and emerging legislation, converters that intake alternating current (AC) and output direct current (DC) known as rectifiers are increasingly implementing power factor correction (PFC) by controlling the input current. For a properly designed PFC-stage inductor, the major design goals include exceeding minimum inductance, remaining below the saturation flux density, high power density, and high efficiency. In meeting these goals, loss calculation is critical in evaluating designs. This input current from PFC circuitry leads to a DC bias through the filter inductor that makes accurate core loss estimation exceedingly difficult as most modern loss estimation techniques neglect the effects of a DC bias. This thesis explores prior loss estimation and design methods, investigates finite element analysis (FEA) design tools, and builds a magnetics test bed setup to empirically determine a magnetic core’s loss under any electrical excitation. In the end, the magnetics test bed hardware results are compared and future work needed to improve the test bed is outlined.
ContributorsMeyers, Tobin (Author) / Ayyanar, Raja (Thesis advisor) / Qin, Jiangchao (Committee member) / Lei, Qin (Committee member) / Arizona State University (Publisher)
Created2019
Description
This dissertation focuses on the structural and optical properties of III-V semiconductor materials. Transmission electron microscopy and atomic force microscopy are used to study at the nanometer scale, the structural properties of defects, interfaces, and surfaces. A correlation with optical properties has been performed using cathodoluminescence.
The dissertation consists of four parts. The first part focuses on InAs quantum dots (QDs) embedded in a GaInP matrix for applications into intermediate band solar cells. The CuPt ordering of the group-III elements in Ga0.5In0.5P has been found to vary during growth of InAs QDs capped with GaAs. The degree of ordering depends on the deposition time of the QDs and on the thickness of the capping layer. The results indicate that disordered GaInP occurs in the presence of excess indium at the growth front.
The second part focuses on the effects of low-angle off-axis GaN substrate orientation and growth rates on the surface morphology of Mg-doped GaN epilayers. Mg doping produces periodic steps and a tendency to cover pinholes associated with threading dislocations. With increasing miscut angle, the steps are observed to increase in height from single to double basal planes, with the coexistence of surfaces with different inclinations. The structural properties are correlated with the electronic properties of GaN epilayers, indicating step bunching reduces the p-type doping efficiency. It is also found that the slower growth rates can enhance step-flow growth and suppress step bunching.
The third part focuses on the effects of inductively-coupled plasma etching on GaN epilayers. The results show that ion energy rather than ion density plays the key role in the etching process, in terms of structural and optical properties of the GaN films. Cathodoluminescence depth-profiling indicates that the band-edge emission of etched GaN is significantly quenched.
The fourth part focuses on growth of Mg-doped GaN on trench patterns. Anisotropic growth and nonuniform acceptor incorporation in p-GaN films have been observed. The results indicate that growth along the sidewall has a faster growth rate and therefore a lower acceptor incorporation efficiency, compared to the region grown on the basal plane.
The dissertation consists of four parts. The first part focuses on InAs quantum dots (QDs) embedded in a GaInP matrix for applications into intermediate band solar cells. The CuPt ordering of the group-III elements in Ga0.5In0.5P has been found to vary during growth of InAs QDs capped with GaAs. The degree of ordering depends on the deposition time of the QDs and on the thickness of the capping layer. The results indicate that disordered GaInP occurs in the presence of excess indium at the growth front.
The second part focuses on the effects of low-angle off-axis GaN substrate orientation and growth rates on the surface morphology of Mg-doped GaN epilayers. Mg doping produces periodic steps and a tendency to cover pinholes associated with threading dislocations. With increasing miscut angle, the steps are observed to increase in height from single to double basal planes, with the coexistence of surfaces with different inclinations. The structural properties are correlated with the electronic properties of GaN epilayers, indicating step bunching reduces the p-type doping efficiency. It is also found that the slower growth rates can enhance step-flow growth and suppress step bunching.
The third part focuses on the effects of inductively-coupled plasma etching on GaN epilayers. The results show that ion energy rather than ion density plays the key role in the etching process, in terms of structural and optical properties of the GaN films. Cathodoluminescence depth-profiling indicates that the band-edge emission of etched GaN is significantly quenched.
The fourth part focuses on growth of Mg-doped GaN on trench patterns. Anisotropic growth and nonuniform acceptor incorporation in p-GaN films have been observed. The results indicate that growth along the sidewall has a faster growth rate and therefore a lower acceptor incorporation efficiency, compared to the region grown on the basal plane.
ContributorsSU, PO-YI (Author) / Ponce, Fernando A. (Thesis advisor) / Smith, David J. (Committee member) / Crozier, Peter A. (Committee member) / Zhao, Yuji (Committee member) / Arizona State University (Publisher)
Created2020
Description
This dissertation covers my doctoral research on the cathodoluminescence (CL) study of the optical properties of III-niride semiconductors.
The first part of this thesis focuses on the optical properties of Mg-doped gallium nitride (GaN:Mg) epitaxial films. GaN is an emerging material for power electronics, especially for high power and high frequency applications. Compared to traditional Si-based devices, GaN-based devices offer superior breakdown properties, faster switching speed, and reduced system size. Some of the current device designs involve lateral p-n junctions which require selective-area doping. Dopant distribution in the selectively-doped regions is a critical issue that can impact the device performance. While most studies on Mg doping in GaN have been reported for epitaxial grown on flat c-plane substrates, questions arise regarding the Mg doping efficiency and uniformity in selectively-doped regions, where growth on surfaces etched away from the exact c-plane orientation is involved. Characterization of doping concentration distribution in lateral structures using secondary ion mass spectroscopy lacks the required spatial resolution. In this work, visualization of acceptor distribution in GaN:Mg epilayers grown by metalorganic chemical vapor deposition (MOCVD) was achieved at sub-micron scale using CL imaging. This was enabled by establishing a correlation among the luminescence characteristics, acceptor concentration, and electrical conductivity of GaN:Mg epilayers. Non-uniformity in acceptor distribution has been observed in epilayers grown on mesa structures and on miscut substrates. It is shown that non-basal-plane surfaces, such as mesa sidewalls and surface step clusters, promotes lateral growth along the GaN basal planes with a reduced Mg doping efficiency. The influence of surface morphology on the Mg doping efficiency in GaN has been studied.
The second part of this thesis focuses on the optical properties of InGaN for photovoltaic applications. The effects of thermal annealing and low energy electron beam irradiation (LEEBI) on the optical properties of MOCVD-grown In0.14Ga0.86N films were studied. A multi-fold increase in luminescence intensity was observed after 800 °C thermal annealing or LEEBI treatment. The mechanism leading to the luminescence intensity increase has been discussed. This study shows procedures that significantly improve the luminescence efficiency of InGaN, which is important for InGaN-based optoelectronic devices.
The first part of this thesis focuses on the optical properties of Mg-doped gallium nitride (GaN:Mg) epitaxial films. GaN is an emerging material for power electronics, especially for high power and high frequency applications. Compared to traditional Si-based devices, GaN-based devices offer superior breakdown properties, faster switching speed, and reduced system size. Some of the current device designs involve lateral p-n junctions which require selective-area doping. Dopant distribution in the selectively-doped regions is a critical issue that can impact the device performance. While most studies on Mg doping in GaN have been reported for epitaxial grown on flat c-plane substrates, questions arise regarding the Mg doping efficiency and uniformity in selectively-doped regions, where growth on surfaces etched away from the exact c-plane orientation is involved. Characterization of doping concentration distribution in lateral structures using secondary ion mass spectroscopy lacks the required spatial resolution. In this work, visualization of acceptor distribution in GaN:Mg epilayers grown by metalorganic chemical vapor deposition (MOCVD) was achieved at sub-micron scale using CL imaging. This was enabled by establishing a correlation among the luminescence characteristics, acceptor concentration, and electrical conductivity of GaN:Mg epilayers. Non-uniformity in acceptor distribution has been observed in epilayers grown on mesa structures and on miscut substrates. It is shown that non-basal-plane surfaces, such as mesa sidewalls and surface step clusters, promotes lateral growth along the GaN basal planes with a reduced Mg doping efficiency. The influence of surface morphology on the Mg doping efficiency in GaN has been studied.
The second part of this thesis focuses on the optical properties of InGaN for photovoltaic applications. The effects of thermal annealing and low energy electron beam irradiation (LEEBI) on the optical properties of MOCVD-grown In0.14Ga0.86N films were studied. A multi-fold increase in luminescence intensity was observed after 800 °C thermal annealing or LEEBI treatment. The mechanism leading to the luminescence intensity increase has been discussed. This study shows procedures that significantly improve the luminescence efficiency of InGaN, which is important for InGaN-based optoelectronic devices.
ContributorsLiu, Hanxiao (Author) / Ponce, Fernando A. (Thesis advisor) / Zhao, Yuji (Committee member) / Newman, Nathan (Committee member) / Fischer, Alec M (Committee member) / Arizona State University (Publisher)
Created2020