Matching Items (9)
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- All Subjects: Reliability
- Creators: Schroder, Dieter
- Creators: Shrivastava, Aviral
Description
Electromigration in metal interconnects is the most pernicious failure mechanism in semiconductor integrated circuits (ICs). Early electromigration investigations were primarily focused on aluminum interconnects for silicon-based ICs. An alternative metallization compatible with gallium arsenide (GaAs) was required in the development of high-powered radio frequency (RF) compound semiconductor devices operating at higher current densities and elevated temperatures. Gold-based metallization was implemented on GaAs devices because it uniquely forms a very low resistance ohmic contact and gold interconnects have superior electrical and thermal conductivity properties. Gold (Au) was also believed to have improved resistance to electromigration due to its higher melting temperature, yet electromigration reliability data on passivated Au interconnects is scarce and inadequate in the literature. Therefore, the objective of this research was to characterize the electromigration lifetimes of passivated Au interconnects under precisely controlled stress conditions with statistically relevant quantities to obtain accurate model parameters essential for extrapolation to normal operational conditions. This research objective was accomplished through measurement of electromigration lifetimes of large quantities of passivated electroplated Au interconnects utilizing high-resolution in-situ resistance monitoring equipment. Application of moderate accelerated stress conditions with a current density limited to 2 MA/cm2 and oven temperatures in the range of 300°C to 375°C avoided electrical overstress and severe Joule-heated temperature gradients. Temperature coefficients of resistance (TCRs) were measured to determine accurate Joule-heated Au interconnect film temperatures. A failure criterion of 50% resistance degradation was selected to prevent thermal runaway and catastrophic metal ruptures that are problematic of open circuit failure tests. Test structure design was optimized to reduce resistance variation and facilitate failure analysis. Characterization of the Au microstructure yielded a median grain size of 0.91 ìm. All Au lifetime distributions followed log-normal distributions and Black's model was found to be applicable. An activation energy of 0.80 ± 0.05 eV was measured from constant current electromigration tests at multiple temperatures. A current density exponent of 1.91 was extracted from multiple current densities at a constant temperature. Electromigration-induced void morphology along with these model parameters indicated grain boundary diffusion is dominant and the void nucleation mechanism controlled the failure time.
ContributorsKilgore, Stephen (Author) / Adams, James (Thesis advisor) / Schroder, Dieter (Thesis advisor) / Krause, Stephen (Committee member) / Gaw, Craig (Committee member) / Arizona State University (Publisher)
Created2013
Description
The increased use of commercial complementary metal-oxide-semiconductor (CMOS) technologies in harsh radiation environments has resulted in a new approach to radiation effects mitigation. This approach utilizes simulation to support the design of integrated circuits (ICs) to meet targeted tolerance specifications. Modeling the deleterious impact of ionizing radiation on ICs fabricated in advanced CMOS technologies requires understanding and analyzing the basic mechanisms that result in buildup of radiation-induced defects in specific sensitive regions. Extensive experimental studies have demonstrated that the sensitive regions are shallow trench isolation (STI) oxides. Nevertheless, very little work has been done to model the physical mechanisms that result in the buildup of radiation-induced defects and the radiation response of devices fabricated in these technologies. A comprehensive study of the physical mechanisms contributing to the buildup of radiation-induced oxide trapped charges and the generation of interface traps in advanced CMOS devices is presented in this dissertation. The basic mechanisms contributing to the buildup of radiation-induced defects are explored using a physical model that utilizes kinetic equations that captures total ionizing dose (TID) and dose rate effects in silicon dioxide (SiO2). These mechanisms are formulated into analytical models that calculate oxide trapped charge density (Not) and interface trap density (Nit) in sensitive regions of deep-submicron devices. Experiments performed on field-oxide-field-effect-transistors (FOXFETs) and metal-oxide-semiconductor (MOS) capacitors permit investigating TID effects and provide a comparison for the radiation response of advanced CMOS devices. When used in conjunction with closed-form expressions for surface potential, the analytical models enable an accurate description of radiation-induced degradation of transistor electrical characteristics. In this dissertation, the incorporation of TID effects in advanced CMOS devices into surface potential based compact models is also presented. The incorporation of TID effects into surface potential based compact models is accomplished through modifications of the corresponding surface potential equations (SPE), allowing the inclusion of radiation-induced defects (i.e., Not and Nit) into the calculations of surface potential. Verification of the compact modeling approach is achieved via comparison with experimental data obtained from FOXFETs fabricated in a 90 nm low-standby power commercial bulk CMOS technology and numerical simulations of fully-depleted (FD) silicon-on-insulator (SOI) n-channel transistors.
ContributorsSanchez Esqueda, Ivan (Author) / Barnaby, Hugh J (Committee member) / Schroder, Dieter (Thesis advisor) / Schroder, Dieter K. (Committee member) / Holbert, Keith E. (Committee member) / Gildenblat, Gennady (Committee member) / Arizona State University (Publisher)
Created2011
Description
Thanks to continuous technology scaling, intelligent, fast and smaller digital systems are now available at affordable costs. As a result, digital systems have found use in a wide range of application areas that were not even imagined before, including medical (e.g., MRI, remote or post-operative monitoring devices, etc.), automotive (e.g., adaptive cruise control, anti-lock brakes, etc.), security systems (e.g., residential security gateways, surveillance devices, etc.), and in- and out-of-body sensing (e.g., capsule swallowed by patients measuring digestive system pH, heart monitors, etc.). Such computing systems, which are completely embedded within the application, are called embedded systems, as opposed to general purpose computing systems. In the design of such embedded systems, power consumption and reliability are indispensable system requirements. In battery operated portable devices, the battery is the single largest factor contributing to device cost, weight, recharging time, frequency and ultimately its usability. For example, in the Apple iPhone 4 smart-phone, the battery is $40\%$ of the device weight, occupies $36\%$ of its volume and allows only $7$ hours (over 3G) of talk time. As embedded systems find use in a range of sensitive applications, from bio-medical applications to safety and security systems, the reliability of the computations performed becomes a crucial factor. At our current technology-node, portable embedded systems are prone to expect failures due to soft errors at the rate of once-per-year; but with aggressive technology scaling, the rate is predicted to increase exponentially to once-per-hour. Over the years, researchers have been successful in developing techniques, implemented at different layers of the design-spectrum, to improve system power efficiency and reliability. Among the layers of design abstraction, I observe that the interface between the compiler and processor micro-architecture possesses a unique potential for efficient design optimizations. A compiler designer is able to observe and analyze the application software at a finer granularity; while the processor architect analyzes the system output (power, performance, etc.) for each executed instruction. At the compiler micro-architecture interface, if the system knowledge at the two design layers can be integrated, design optimizations at the two layers can be modified to efficiently utilize available resources and thereby achieve appreciable system-level benefits. To this effect, the thesis statement is that, ``by merging system design information at the compiler and micro-architecture design layers, smart compilers can be developed, that achieve reliable and power-efficient embedded computing through: i) Pure compiler techniques, ii) Hybrid compiler micro-architecture techniques, and iii) Compiler-aware architectures''. In this dissertation demonstrates, through contributions in each of the three compiler-based techniques, the effectiveness of smart compilers in achieving power-efficiency and reliability in embedded systems.
ContributorsJeyapaul, Reiley (Author) / Shrivastava, Aviral (Thesis advisor) / Vrudhula, Sarma (Committee member) / Clark, Lawrence (Committee member) / Colbourn, Charles (Committee member) / Arizona State University (Publisher)
Created2012
Description
This dissertation addresses challenges pertaining to multi-junction (MJ) solar cells from material development to device design and characterization. Firstly, among the various methods to improve the energy conversion efficiency of MJ solar cells using, a novel approach proposed recently is to use II-VI (MgZnCd)(SeTe) and III-V (AlGaIn)(AsSb) semiconductors lattice-matched on GaSb or InAs substrates for current-matched subcells with minimal defect densities. CdSe/CdTe superlattices are proposed as a potential candidate for a subcell in the MJ solar cell designs using this material system, and therefore the material properties of the superlattices are studied. The high structural qualities of the superlattices are obtained from high resolution X-ray diffraction measurements and cross-sectional transmission electron microscopy images. The effective bandgap energies of the superlattices obtained from the photoluminescence (PL) measurements vary with the layer thicknesses, and are smaller than the bandgap energies of either the constituent material. Furthermore, The PL peak position measured at the steady state exhibits a blue shift that increases with the excess carrier concentration. These results confirm a strong type-II band edge alignment between CdSe and CdTe. The valence band offset between unstrained CdSe and CdTe is determined as 0.63 eV±0.06 eV by fitting the measured PL peak positions using the Kronig-Penney model. The blue shift in PL peak position is found to be primarily caused by the band bending effect based on self-consistent solutions of the Schrödinger and Poisson equations. Secondly, the design of the contact grid layout is studied to maximize the power output and energy conversion efficiency for concentrator solar cells. Because the conventional minimum power loss method used for the contact design is not accurate in determining the series resistance loss, a method of using a distributed series resistance model to maximize the power output is proposed for the contact design. It is found that the junction recombination loss in addition to the series resistance loss and shadowing loss can significantly affect the contact layout. The optimal finger spacing and maximum efficiency calculated by the two methods are close, and the differences are dependent on the series resistance and saturation currents of solar cells. Lastly, the accurate measurements of external quantum efficiency (EQE) are important for the design and development of MJ solar cells. However, the electrical and optical couplings between the subcells have caused EQE measurement artifacts. In order to interpret the measurement artifacts, DC and small signal models are built for the bias condition and the scan of chopped monochromatic light in the EQE measurements. Characterization methods are developed for the device parameters used in the models. The EQE measurement artifacts are found to be caused by the shunt and luminescence coupling effects, and can be minimized using proper voltage and light biases. Novel measurement methods using a pulse voltage bias or a pulse light bias are invented to eliminate the EQE measurement artifacts. These measurement methods are nondestructive and easy to implement. The pulse voltage bias or pulse light bias is superimposed on the conventional DC voltage and light biases, in order to control the operating points of the subcells and counterbalance the effects of shunt and luminescence coupling. The methods are demonstrated for the first time to effectively eliminate the measurement artifacts.
ContributorsLi, Jingjing (Author) / Zhang, Yong-Hang (Thesis advisor) / Tao, Meng (Committee member) / Schroder, Dieter (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2012
Description
Advances in semiconductor technology have brought computer-based systems intovirtually all aspects of human life. This unprecedented integration of semiconductor based systems in our lives has significantly increased the domain and the number
of safety-critical applications – application with unacceptable consequences of failure. Software-level error resilience schemes are attractive because they can provide commercial-off-the-shelf microprocessors with adaptive and scalable reliability.
Among all software-level error resilience solutions, in-application instruction replication based approaches have been widely used and are deemed to be the most effective. However, existing instruction-based replication schemes only protect some part of computations i.e. arithmetic and logical instructions and leave the rest as unprotected. To improve the efficacy of instruction-level redundancy-based approaches, we developed several error detection and error correction schemes. nZDC (near Zero silent
Data Corruption) is an instruction duplication scheme which protects the execution of whole application. Rather than detecting errors on register operands of memory and control flow operations, nZDC checks the results of such operations. nZDC en
sures the correct execution of memory write instruction by reloading stored value and checking it against redundantly computed value. nZDC also introduces a novel control flow checking mechanism which replicates compare and branch instructions and
detects both wrong direction branches as well as unwanted jumps. Fault injection experiments show that nZDC can improve the error coverage of the state-of-the-art schemes by more than 10x, without incurring any more performance penalty. Further
more, we introduced two error recovery solutions. InCheck is our backward recovery solution which makes light-weighted error-free checkpoints at the basic block granularity. In the case of error, InCheck reverts the program execution to the beginning of last executed basic block and resumes the execution by the aid of preserved in formation. NEMESIS is our forward recovery scheme which runs three versions of computation and detects errors by checking the results of all memory write and branch
operations. In the case of a mismatch, NEMESIS diagnosis routine decides if the error is recoverable. If yes, NEMESIS recovery routine reverts the effect of error from the program state and resumes program normal execution from the error detection
point.
of safety-critical applications – application with unacceptable consequences of failure. Software-level error resilience schemes are attractive because they can provide commercial-off-the-shelf microprocessors with adaptive and scalable reliability.
Among all software-level error resilience solutions, in-application instruction replication based approaches have been widely used and are deemed to be the most effective. However, existing instruction-based replication schemes only protect some part of computations i.e. arithmetic and logical instructions and leave the rest as unprotected. To improve the efficacy of instruction-level redundancy-based approaches, we developed several error detection and error correction schemes. nZDC (near Zero silent
Data Corruption) is an instruction duplication scheme which protects the execution of whole application. Rather than detecting errors on register operands of memory and control flow operations, nZDC checks the results of such operations. nZDC en
sures the correct execution of memory write instruction by reloading stored value and checking it against redundantly computed value. nZDC also introduces a novel control flow checking mechanism which replicates compare and branch instructions and
detects both wrong direction branches as well as unwanted jumps. Fault injection experiments show that nZDC can improve the error coverage of the state-of-the-art schemes by more than 10x, without incurring any more performance penalty. Further
more, we introduced two error recovery solutions. InCheck is our backward recovery solution which makes light-weighted error-free checkpoints at the basic block granularity. In the case of error, InCheck reverts the program execution to the beginning of last executed basic block and resumes the execution by the aid of preserved in formation. NEMESIS is our forward recovery scheme which runs three versions of computation and detects errors by checking the results of all memory write and branch
operations. In the case of a mismatch, NEMESIS diagnosis routine decides if the error is recoverable. If yes, NEMESIS recovery routine reverts the effect of error from the program state and resumes program normal execution from the error detection
point.
ContributorsDidehban, Moslem (Author) / Shrivastava, Aviral (Thesis advisor) / Wu, Carole-Jean (Committee member) / Clark, Lawrence (Committee member) / Mahlke, Scott (Committee member) / Arizona State University (Publisher)
Created2018
Description
Several decades of transistor technology scaling has brought the threat of soft errors to modern embedded processors. Several techniques have been proposed to protect these systems from soft errors. However, their effectiveness in protecting the computation cannot be ascertained without accurate and quantitative estimation of system reliability. Vulnerability -- a metric that defines the probability of system-failure (reliability) through analytical models -- is the most effective mechanism for our current estimation and early design space exploration needs. Previous vulnerability estimation tools are based around the Sim-Alpha simulator which has been to shown to have several limitations. In this thesis, I present gemV: an accurate and comprehensive vulnerability estimation tool based on gem5. Gem5 is a popular cycle-accurate micro-architectural simulator that can model several different processor models in close to real hardware form. GemV can be used for fast and early design space exploration and also evaluate the protection afforded by commodity processors. gemV is comprehensive, since it models almost all sequential components of the processor. gemV is accurate because of fine-grain vulnerability tracking, accurate vulnerability modeling of squashed instructions, and accurate vulnerability modeling of shared data structures in gem5. gemV has been thoroughly validated against extensive fault injection experiments and achieves a 97\% accuracy with 95\% confidence. A micro-architect can use gemV to discover micro-architectural variants of a processor that minimize vulnerability for allowed performance penalty. A software developer can use gemV to explore the performance-vulnerability trade-off by choosing different algorithms and compiler optimizations, while the system designer can use gemV to explore the performance-vulnerability trade-offs of choosing different Insruction Set Architectures (ISA).
ContributorsTanikella, Srinivas Karthik (Author) / Shrivastava, Aviral (Thesis advisor) / Bazzi, Rida (Committee member) / Wu, Carole-Jean (Committee member) / Arizona State University (Publisher)
Created2016
Description
Soft errors are considered as a key reliability challenge for sub-nano scale transistors. An ideal solution for such a challenge should ultimately eliminate the effect of soft errors from the microprocessor. While forward recovery techniques achieve fast recovery from errors by simply voting out the wrong values, they incur the overhead of three copies execution. Backward recovery techniques only need two copies of execution, but suffer from check-pointing overhead.
In this work I explored the efficiency of integrating check-pointing into the application and the effectiveness of recovery that can be performed upon it. After evaluating the available fine-grained approaches to perform recovery, I am introducing InCheck, an in-application recovery scheme that can be integrated into instruction-duplication based techniques, thus providing a fast error recovery. The proposed technique makes light-weight checkpoints at the basic-block granularity, and uses them for recovery purposes.
To evaluate the effectiveness of the proposed technique, 10,000 fault injection experiments were performed on different hardware components of a modern ARM in-order simulated processor. InCheck was able to recover from all detected errors by replaying about 20 instructions, however, the state of the art recovery scheme failed more than 200 times.
In this work I explored the efficiency of integrating check-pointing into the application and the effectiveness of recovery that can be performed upon it. After evaluating the available fine-grained approaches to perform recovery, I am introducing InCheck, an in-application recovery scheme that can be integrated into instruction-duplication based techniques, thus providing a fast error recovery. The proposed technique makes light-weight checkpoints at the basic-block granularity, and uses them for recovery purposes.
To evaluate the effectiveness of the proposed technique, 10,000 fault injection experiments were performed on different hardware components of a modern ARM in-order simulated processor. InCheck was able to recover from all detected errors by replaying about 20 instructions, however, the state of the art recovery scheme failed more than 200 times.
ContributorsLokam, Sai Ram Dheeraj (Author) / Shrivastava, Aviral (Thesis advisor) / Clark, Lawrence T (Committee member) / Mubayi, Anuj (Committee member) / Arizona State University (Publisher)
Created2016
Description
Potential-Induced Degradation (PID) is an extremely serious photovoltaic (PV) durability issue significantly observed in crystalline silicon PV modules due to its rapid power degradation, particularly when compared to other PV degradation modes. The focus of this dissertation is to understand PID mechanisms and to develop PID-free cells and modules. PID-affected modules have been claimed to be fully recovered by high temperature and reverse potential treatments. However, the results obtained in this work indicate that the near-full recovery of efficiency can be achieved only at high irradiance conditions, but the full recovery of efficiency at low irradiance levels, of shunt resistance, and of quantum efficiency (QE) at short wavelengths could not be achieved. The QE loss observed at short wavelengths was modeled by changing the front surface recombination velocity. The QE scaling error due to a measurement on a PID shunted cell was addressed by developing a very low input impedance accessory applicable to an existing QE system. The impacts of silicon nitride (SiNx) anti-reflection coating (ARC) refractive index (RI) and emitter sheet resistance on PID are presented. Low RI ARC cells (1.87) were observed to be PID-susceptible whereas high RI ARC cells (2.05) were determined to be PID-resistant using a method employing high dose corona charging followed by time-resolved measurement of surface voltage. It has been demonstrated that the PID could be prevented by deploying an emitter having a low sheet resistance (~ 60 /sq) even if a PID-susceptible ARC is used in a cell. Secondary ion mass spectroscopy (SIMS) results suggest that a high phosphorous emitter layer hinders sodium transport, which is responsible for the PID. Cells can be screened for PID susceptibility by illuminated lock-in thermography (ILIT) during the cell fabrication process, and the sample structure for this can advantageously be simplified as long as the sample has the SiNx ARC and an aluminum back surface field. Finally, this dissertation presents a prospective method for eliminating or minimizing the PID issue either in the factory during manufacturing or in the field after system installation. The method uses commercially available, thin, and flexible Corning® Willow® Glass sheets or strips on the PV module glass superstrates, disrupting the current leakage path from the cells to the grounded frame.
ContributorsOh, Jaewon (Author) / Bowden, Stuart (Thesis advisor) / Tamizhmani, Govindasamy (Thesis advisor) / Honsberg, Christiana (Committee member) / Hacke, Peter (Committee member) / Schroder, Dieter (Committee member) / Arizona State University (Publisher)
Created2016
Description
As the world energy demand increases, semiconductor devices with high energy conversion efficiency become more and more desirable. The energy conversion consists of two distinct processes, namely energy generation and usage. In this dissertation, novel multi-junction solar cells and light emitting diodes (LEDs) are proposed and studied for high energy conversion efficiency in both processes, respectively. The first half of this dissertation discusses the practically achievable energy conversion efficiency limit of solar cells. Since the demonstration of the Si solar cell in 1954, the performance of solar cells has been improved tremendously and recently reached 41.6% energy conversion efficiency. However, it seems rather challenging to further increase the solar cell efficiency. The state-of-the-art triple junction solar cells are analyzed to help understand the limiting factors. To address these issues, the monolithically integrated II-VI and III-V material system is proposed for solar cell applications. This material system covers the entire solar spectrum with a continuous selection of energy bandgaps and can be grown lattice matched on a GaSb substrate. Moreover, six four-junction solar cells are designed for AM0 and AM1.5D solar spectra based on this material system, and new design rules are proposed. The achievable conversion efficiencies for these designs are calculated using the commercial software package Silvaco with real material parameters. The second half of this dissertation studies the semiconductor luminescence refrigeration, which corresponds to over 100% energy usage efficiency. Although cooling has been realized in rare-earth doped glass by laser pumping, semiconductor based cooling is yet to be realized. In this work, a device structure that monolithically integrates a GaAs hemisphere with an InGaAs/GaAs quantum-well thin slab LED is proposed to realize cooling in semiconductor. The device electrical and optical performance is calculated. The proposed device then is fabricated using nine times photolithography and eight masks. The critical process steps, such as photoresist reflow and dry etch, are simulated to insure successful processing. Optical testing is done with the devices at various laser injection levels and the internal quantum efficiency, external quantum efficiency and extraction efficiency are measured.
ContributorsWu, Songnan (Author) / Zhang, Yong-Hang (Thesis advisor) / Menéndez, Jose (Committee member) / Ponce, Fernando (Committee member) / Belitsky, Andrei (Committee member) / Schroder, Dieter (Committee member) / Arizona State University (Publisher)
Created2010