Matching Items (7)
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- All Subjects: Computational Chemistry
- All Subjects: Origami
- Creators: Zhuang, Houlong
Description
Stiffness and flexibility are essential in many fields, including robotics, aerospace, bioengineering, etc. In recent years, origami-based mechanical metamaterials were designed for better mechanical properties including tunable stiffness and tunable collapsibility. However, in existing studies, the tunable stiffness is only with limited range and limited controllability. To overcome these challenges, two objectives were proposed and achieved in this dissertation: first, to design mechanical metamaterials with metamaterials with selective stiffness and collapsibility; second, to design mechanical metamaterials with in-situ tunable stiffness among positive, zero, and negative.In the first part, triangulated cylinder origami was employed to build deployable mechanical metamaterials through folding and unfolding along the crease lines. These deployable structures are flexible in the deploy direction so that it can be easily collapsed along the same way as it was deployed. An origami-inspired mechanical metamaterial was designed for on-demand deployability and selective collapsibility: autonomous deployability from the collapsed state and selective collapsibility along two different paths, with low stiffness for one path and substantially high stiffness for another path. The created mechanical metamaterial yields unprecedented load bearing capability in the deploy direction while possessing great deployability and collapsibility. The principle in this prospectus can be utilized to design and create versatile origami-inspired mechanical metamaterials that can find many applications.
In the second part, curved origami patterns were designed to accomplish in situ stiffness manipulation covering positive, zero, and negative stiffness by activating predefined creases on one curved origami pattern. This elegant design enables in situ stiffness switching in lightweight and space-saving applications, as demonstrated through three robotic-related components. Under a uniform load, the curved origami can provide universal gripping, controlled force transmissibility, and multistage stiffness response. This work illustrates an unexplored and unprecedented capability of curved origami, which opens new applications in robotics for this particular family of origami patterns.
ContributorsZhai, Zirui (Author) / Nian, Qiong (Thesis advisor) / Zhuang, Houlong (Committee member) / Huang, Huei-Ping (Committee member) / Zhang, Wenlong (Committee member) / Liu, Yongming (Committee member) / Arizona State University (Publisher)
Created2021
Description
The goal of this experiment was to examine the energy absorption properties of origami-inspired honeycomb and standard honeycomb structures. These structures were 3D printed with two different materials: thermoplastic polyurethane (TPU) and acrylonitrile butadiene styrene (ABS). Quasi-static compression testing was performed on these structures for both types and materials at various wall thicknesses. The energy absorption and other material properties were analyzed for each structure. Overall, the results indicate that origami-inspired structures perform best at energy absorption at a higher wall thickness with a rigid material. The results also indicated that standard honeycomb structures perform better with lower wall thickness, and also perform better with a rigid, rather than a flexible material. Additionally, it was observed that a flexible material, like TPU, better demonstrates the folding and recovery properties of origami-inspired structures. The results of this experiment have applications wherever honeycomb structures are used, mostly on aircraft and spacecraft. In vehicles with structures of a sufficiently high wall thickness with a rigid material, origami-inspired honeycomb structures could be used instead of current honeycomb structures in order to better protect the passengers or payload through improved energy absorption.
ContributorsBuessing, Robert (Author) / Nian, Qiong (Thesis director) / Zhuang, Houlong (Committee member) / Barrett, The Honors College (Contributor) / Mechanical and Aerospace Engineering Program (Contributor) / Watts College of Public Service & Community Solut (Contributor)
Created2022-05
Description
High-entropy alloys (HEAs) is a new class of materials which have been studied heavily due to their special mechanical properties. HEAs refers to alloys with multiple equimolar or nearly equimolar elements. HEAs show exceptional and attractive properties currently absent from conventional alloys, which make them the center of intense investigation. HEAs obtain their properties from four core effects that they exhibit and most of the work on them have been dedicated to study their mechanical properties. In contrast, little or no research have gone into studying the functional or even thermal properties of HEAs. Some HEAs have also shown exceptional or very high melting points. According to the definition of HEAs, Si-Ge-Sn alloys with equal or comparable concentrations of the three group IV elements belong to the category of HEAs. Thus, the equimolar components of Si-Ge-Sn alloys probably allow their atomic structures to display the same fundamental effects of metallic HEAs. The experimental fabrication of such alloys has been proven to be very difficult, which is mainly due to differences between the properties of their constituent elements, as indicated from their binary phase diagrams. However, previous computational studies have shown that SiGeSn HEAs have some very interesting properties, such as high electrical conductivity, low thermal conductivity and semiconducting properties. In this work, going for a complete characterization of the SiGeSn HEA properties, the melting point of this alloy is studied using classical molecular dynamics (MD) simulations and density functional theory (DFT) calculations. The aim is to investigate the effects of high Sn content in this alloy on the melting point compared with the traditional SiGe alloys. Classical MD simulations results strongly indicates that none of the available empirical potentials is able to predict accurate or reasonable melting points for SiGeSn HEAs and most of its subsystems. DFT calculations results show that SiGeSn HEA have a melting point which represent the mean value of its constituent elements and that no special deviations are found. This work contributes to the study of SiGeSn HEA properties, which can serve as guidance before the successful experimental fabrication of this alloy.
ContributorsAlqaisi, Ahmad Madhat Odeh (Author) / Hong, Qi-Jun (Thesis advisor) / Zhuang, Houlong (Thesis advisor) / Jiao, Yang (Committee member) / Arizona State University (Publisher)
Created2023
Description
Advanced material systems refer to materials that are comprised of multiple traditional constituents but complex microstructure morphologies, which lead to their superior properties over conventional materials. This dissertation is motivated by the grand challenge in accelerating the design of advanced material systems through systematic optimization with respect to material microstructures or processing settings. While optimization techniques have mature applications to a large range of engineering systems, their application to material design meets unique challenges due to the high dimensionality of microstructures and the high costs in computing process-structure-property (PSP) mappings. The key to addressing these challenges is the learning of material representations and predictive PSP mappings while managing a small data acquisition budget. This dissertation thus focuses on developing learning mechanisms that leverage context-specific meta-data and physics-based theories. Two research tasks will be conducted: In the first, we develop a statistical generative model that learns to characterize high-dimensional microstructure samples using low-dimensional features. We improve the data efficiency of a variational autoencoder by introducing a morphology loss to the training. We demonstrate that the resultant microstructure generator is morphology-aware when trained on a small set of material samples, and can effectively constrain the microstructure space during material design. In the second task, we investigate an active learning mechanism where new samples are acquired based on their violation to a theory-driven constraint on the physics-based model. We demonstrate using a topology optimization case that while data acquisition through the physics-based model is often expensive (e.g., obtaining microstructures through simulation or optimization processes), the evaluation of the constraint can be far more affordable (e.g., checking whether a solution is optimal or equilibrium). We show that this theory-driven learning algorithm can lead to much improved learning efficiency and generalization performance when such constraints can be derived. The outcomes of this research is a better understanding of how physics knowledge about material systems can be integrated into machine learning frameworks, in order to achieve more cost-effective and reliable learning of material representations and predictive models, which are essential to accelerate computational material design.
ContributorsCang, Ruijin (Author) / Ren, Yi (Thesis advisor) / Liu, Yongming (Committee member) / Jiao, Yang (Committee member) / Nian, Qiong (Committee member) / Zhuang, Houlong (Committee member) / Arizona State University (Publisher)
Created2018
Description
The structural and electronic properties of compositionally complex semiconductors have long been of both theoretical interest and engineering importance. As a new class of materials with an intrinsic compositional complexity, medium entropy alloys (MEAs) are immensely studied mainly for their excellent mechanical properties. The electronic properties of MEAs, however, are less well investigated. In this thesis, various properties such as electronic, spin, and thermal properties of two three-dimensional (3D) and two two-dimensional (2D) compositionally complex semiconductors are demonstrated to have promising various applications in photovoltaic, thermoelectric, and spin quantum bits (qubits).3D semiconducting Si-Ge-Sn and C3BN alloys is firstly introduced. Density functional theory (DFT) calculations and Monte Carlo simulations show that the Si1/3Ge1/3Sn1/3 MEA exhibits a large local distortion effect yet no chemical short-range order. Single vacancies in this MEA can be stabilized by bond reformations while the alloy retains semiconducting. DFT and molecular dynamics calculations predict that increasing the compositional disorder in SiyGeySnx MEAs enhances their electrical conductivity while weakens the thermal conductivity at room temperature, making the SiyGeySnx MEAs promising functional materials for thermoelectric devices. Furthermore, the nitrogen-vacancy (NV) center analog in C3BN (NV-C3BN) is studied to explore its applications in quantum computers. This analog possesses similar properties to the NV center in diamond such as a highly localized spin density and strong hyperfine interactions, making C3BN suitable for hosting spin qubits. The analog also displays two zero-phonon-line energies corresponding to wavelengths close to the ideal telecommunication band width, useful for quantum communications.
2D semiconducting transition metal chalcogenides (TMCs) and PtPN are also investigated. The quaternary compositionally complex TMCs show tunable properties such as in-plane lattice constants, band gaps, and band alignment, using a high through-put workflow from DFT calculations in conjunction with the virtual crystal approximation. A novel 2D semiconductor PtPN of direct bandgap is also predicted, based on pentagonal tessellation.
The work in the thesis offers guidance to the experimental realization of these novel semiconductors, which serve as valuable prototypes of other compositionally complex systems from other elements.
2D semiconducting transition metal chalcogenides (TMCs) and PtPN are also investigated. The quaternary compositionally complex TMCs show tunable properties such as in-plane lattice constants, band gaps, and band alignment, using a high through-put workflow from DFT calculations in conjunction with the virtual crystal approximation. A novel 2D semiconductor PtPN of direct bandgap is also predicted, based on pentagonal tessellation.
The work in the thesis offers guidance to the experimental realization of these novel semiconductors, which serve as valuable prototypes of other compositionally complex systems from other elements.
ContributorsWang, Duo (Author) / Zhuang, Houlong (Thesis advisor) / Singh, Arunima (Committee member) / Jiao, Yang (Committee member) / Arizona State University (Publisher)
Created2020
Description
Single-layer pentagonal materials have received limited attention compared with their counterparts with hexagonal structures. They are two-dimensional (2D) materials with pentagonal structures, that exhibit novel electronic, optical, or magnetic properties. There are 15 types of pentagonal tessellations which allow plenty of options for constructing 2D pentagonal lattices. Few of them have been explored theoretically or experimentally. Studying this new type of 2D materials with density functional theory (DFT) will inspire the discovery of new 2D materials and open up applications of these materials in electronic and magnetic devices.In this dissertation, DFT is applied to discover novel 2D materials with pentagonal structures. Firstly, I examine the possibility of forming a 2D nanosheet with the vertices of type 15 pentagons occupied by boron, silicon, phosphorous, sulfur, gallium, germanium or tin atoms. I obtain different rearranged structures such as a single-layer gallium sheet with triangular patterns. Then the exploration expands to other 14 types of pentagons, leading to the discoveries of carbon nanosheets with Cairo tessellation (type 2/4 pentagons) and other patterns. The resulting 2D structures exhibit diverse electrical properties. Then I reveal the hidden Cairo tessellations in the pyrite structures and discover a family of planar 2D materials (such as PtP2), with a chemical formula of AB2 and space group pa ̄3. The combination of DFT and geometries opens up a novel route for the discovery of new 2D materials. Following this path, a series of 2D pentagonal materials such as 2D CoS2 are revealed with promising electronic and magnetic applications. Specifically, the DFT calculations show that CoS2 is an antiferromagnetic semiconductor with a band gap of 2.24 eV, and a N ́eel temperature of about 20 K. In order to enhance the superexchange interactions between the ions in this binary compound, I explore the ternary 2D pentagonal material CoAsS, that lacks the inversion symmetry. I find out CoAsS exhibits a higher Curie temperature of 95 K and a sizable piezoelectricity (d11=-3.52 pm/V). In addition to CoAsS, 34 ternary 2D pentagonal materials are discovered, among which I focus on FeAsS, that is a semiconductor showing strong magnetocrystalline anisotropy and sizable Berry curvature. Its magnetocrystalline anisotropy energy is 440 μeV/Fe ion, higher than many other 2D magnets that have been found.
Overall, this work not only provides insights into the structure-property relationship of 2D pentagonal materials and opens up a new route of studying 2D materials by combining geometry and computational materials science, but also shows the potential applications of 2D pentagonal materials in electronic and magnetic devices.
Overall, this work not only provides insights into the structure-property relationship of 2D pentagonal materials and opens up a new route of studying 2D materials by combining geometry and computational materials science, but also shows the potential applications of 2D pentagonal materials in electronic and magnetic devices.
ContributorsLiu, Lei (Author) / Zhuang, Houlong (Thesis advisor) / Singh, Arunima (Committee member) / Jiao, Yang (Committee member) / Arizona State University (Publisher)
Created2020
Description
Functional materials can be characterized as materials that have tunable properties and are attractive solutions to the improvement and optimization of processes that require specific physiochemical characteristics. Through tailoring and altering these materials, their characteristics can be fine-tuned for specific applications. Computational modeling proves to be a crucial methodology in the design and optimization of such materials. This dissertation encompasses the utilization of molecular dynamics simulations and quantum calculations in two fields of functional materials: electrolytes and semiconductors. Molecular dynamics (MD) simulations were performed on ionic liquid-based electrolyte systems to identify molecular interactions, structural changes, and transport properties that are often reflected in experimental results. The simulations aid in the development process of the electrolyte systems in terms of concentrations of the constituents and can be invoked as a complementary or predictive tool to laboratory experiments. The theme of this study stretches further to include computational studies of the reactivity of atomic layer deposition (ALD) precursors. Selected aminosilane-based precursors were chosen to undergo density functional theory (DFT) calculations to determine surface reactivity and viability in an industrial setting. The calculations were expanded to include the testing of a semi-empirical tight binding program to predict growth per cycle and precursor reactivity with a high surface coverage model. Overall, the implementation of computational methodologies and techniques within these applications improves materials design and process efficiency while streamlining the development of new functional materials.
ContributorsGliege, Marisa Elise (Author) / Dai, Lenore (Thesis advisor) / Derecskei-Kovacs, Agnes (Thesis advisor) / Muhich, Christopher (Committee member) / Emady, Heather (Committee member) / Zhuang, Houlong (Committee member) / Arizona State University (Publisher)
Created2021