Matching Items (17)
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- All Subjects: Computer storage devices
- All Subjects: Radiation
- Creators: Holbert, Keith E.
- Creators: Shrivastava, Aviral
- Creators: Chakrabarti, Chaitali
Description
Radiation-induced gain degradation in bipolar devices is considered to be the primary threat to linear bipolar circuits operating in the space environment. The damage is primarily caused by charged particles trapped in the Earth's magnetosphere, the solar wind, and cosmic rays. This constant radiation exposure leads to early end-of-life expectancies for many electronic parts. Exposure to ionizing radiation increases the density of oxide and interfacial defects in bipolar oxides leading to an increase in base current in bipolar junction transistors. Radiation-induced excess base current is the primary cause of current gain degradation. Analysis of base current response can enable the measurement of defects generated by radiation exposure. In addition to radiation, the space environment is also characterized by extreme temperature fluctuations. Temperature, like radiation, also has a very strong impact on base current. Thus, a technique for separating the effects of radiation from thermal effects is necessary in order to accurately measure radiation-induced damage in space. This thesis focuses on the extraction of radiation damage in lateral PNP bipolar junction transistors and the space environment. It also describes the measurement techniques used and provides a quantitative analysis methodology for separating radiation and thermal effects on the bipolar base current.
ContributorsCampola, Michael J (Author) / Barnaby, Hugh J (Thesis advisor) / Holbert, Keith E. (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2011
Description
The increased use of commercial complementary metal-oxide-semiconductor (CMOS) technologies in harsh radiation environments has resulted in a new approach to radiation effects mitigation. This approach utilizes simulation to support the design of integrated circuits (ICs) to meet targeted tolerance specifications. Modeling the deleterious impact of ionizing radiation on ICs fabricated in advanced CMOS technologies requires understanding and analyzing the basic mechanisms that result in buildup of radiation-induced defects in specific sensitive regions. Extensive experimental studies have demonstrated that the sensitive regions are shallow trench isolation (STI) oxides. Nevertheless, very little work has been done to model the physical mechanisms that result in the buildup of radiation-induced defects and the radiation response of devices fabricated in these technologies. A comprehensive study of the physical mechanisms contributing to the buildup of radiation-induced oxide trapped charges and the generation of interface traps in advanced CMOS devices is presented in this dissertation. The basic mechanisms contributing to the buildup of radiation-induced defects are explored using a physical model that utilizes kinetic equations that captures total ionizing dose (TID) and dose rate effects in silicon dioxide (SiO2). These mechanisms are formulated into analytical models that calculate oxide trapped charge density (Not) and interface trap density (Nit) in sensitive regions of deep-submicron devices. Experiments performed on field-oxide-field-effect-transistors (FOXFETs) and metal-oxide-semiconductor (MOS) capacitors permit investigating TID effects and provide a comparison for the radiation response of advanced CMOS devices. When used in conjunction with closed-form expressions for surface potential, the analytical models enable an accurate description of radiation-induced degradation of transistor electrical characteristics. In this dissertation, the incorporation of TID effects in advanced CMOS devices into surface potential based compact models is also presented. The incorporation of TID effects into surface potential based compact models is accomplished through modifications of the corresponding surface potential equations (SPE), allowing the inclusion of radiation-induced defects (i.e., Not and Nit) into the calculations of surface potential. Verification of the compact modeling approach is achieved via comparison with experimental data obtained from FOXFETs fabricated in a 90 nm low-standby power commercial bulk CMOS technology and numerical simulations of fully-depleted (FD) silicon-on-insulator (SOI) n-channel transistors.
ContributorsSanchez Esqueda, Ivan (Author) / Barnaby, Hugh J (Committee member) / Schroder, Dieter (Thesis advisor) / Schroder, Dieter K. (Committee member) / Holbert, Keith E. (Committee member) / Gildenblat, Gennady (Committee member) / Arizona State University (Publisher)
Created2011
Description
Chalcogenide glass (ChG) materials have gained wide attention because of their applications in conductive bridge random access memory (CBRAM), phase change memories (PC-RAM), optical rewritable disks (CD-RW and DVD-RW), microelectromechanical systems (MEMS), microfluidics, and optical communications. One of the significant properties of ChG materials is the change in the resistivity of the material when a metal such as Ag or Cu is added to it by diffusion. This study demonstrates the potential radiation-sensing capabilities of two metal/chalcogenide glass device configurations. Lateral and vertical device configurations sense the radiation-induced migration of Ag+ ions in germanium selenide glasses via changes in electrical resistance between electrodes on the ChG. Before irradiation, these devices exhibit a high-resistance `OFF-state' (in the order of 10E12) but following irradiation, with either 60-Co gamma-rays or UV light, their resistance drops to a low-resistance `ON-state' (around 10E3). Lateral devices have exhibited cyclical recovery with room temperature annealing of the Ag doped ChG, which suggests potential uses in reusable radiation sensor applications. The feasibility of producing inexpensive flexible radiation sensors has been demonstrated by studying the effects of mechanical strain and temperature stress on sensors formed on flexible polymer substrate. The mechanisms of radiation-induced Ag/Ag+ transport and reactions in ChG have been modeled using a finite element device simulator, ATLAS. The essential reactions captured by the simulator are radiation-induced carrier generation, combined with reduction/oxidation for Ag species in the chalcogenide film. Metal-doped ChGs are solid electrolytes that have both ionic and electronic conductivity. The ChG based Programmable Metallization Cell (PMC) is a technology platform that offers electric field dependent resistance switching mechanisms by formation and dissolution of nano sized conductive filaments in a ChG solid electrolyte between oxidizable and inert electrodes. This study identifies silver anode agglomeration in PMC devices following large radiation dose exposure and considers device failure mechanisms via electrical and material characterization. The results demonstrate that by changing device structural parameters, silver agglomeration in PMC devices can be suppressed and reliable resistance switching may be maintained for extremely high doses ranging from 4 Mrad(GeSe) to more than 10 Mrad (ChG).
ContributorsDandamudi, Pradeep (Author) / Kozicki, Michael N (Thesis advisor) / Barnaby, Hugh J (Committee member) / Holbert, Keith E. (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
We are expecting hundreds of cores per chip in the near future. However, scaling the memory architecture in manycore architectures becomes a major challenge. Cache coherence provides a single image of memory at any time in execution to all the cores, yet coherent cache architectures are believed will not scale to hundreds and thousands of cores. In addition, caches and coherence logic already take 20-50% of the total power consumption of the processor and 30-60% of die area. Therefore, a more scalable architecture is needed for manycore architectures. Software Managed Manycore (SMM) architectures emerge as a solution. They have scalable memory design in which each core has direct access to only its local scratchpad memory, and any data transfers to/from other memories must be done explicitly in the application using Direct Memory Access (DMA) commands. Lack of automatic memory management in the hardware makes such architectures extremely power-efficient, but they also become difficult to program. If the code/data of the task mapped onto a core cannot fit in the local scratchpad memory, then DMA calls must be added to bring in the code/data before it is required, and it may need to be evicted after its use. However, doing this adds a lot of complexity to the programmer's job. Now programmers must worry about data management, on top of worrying about the functional correctness of the program - which is already quite complex. This dissertation presents a comprehensive compiler and runtime integration to automatically manage the code and data of each task in the limited local memory of the core. We firstly developed a Complete Circular Stack Management. It manages stack frames between the local memory and the main memory, and addresses the stack pointer problem as well. Though it works, we found we could further optimize the management for most cases. Thus a Smart Stack Data Management (SSDM) is provided. In this work, we formulate the stack data management problem and propose a greedy algorithm for the same. Later on, we propose a general cost estimation algorithm, based on which CMSM heuristic for code mapping problem is developed. Finally, heap data is dynamic in nature and therefore it is hard to manage it. We provide two schemes to manage unlimited amount of heap data in constant sized region in the local memory. In addition to those separate schemes for different kinds of data, we also provide a memory partition methodology.
ContributorsBai, Ke (Author) / Shrivastava, Aviral (Thesis advisor) / Chatha, Karamvir (Committee member) / Xue, Guoliang (Committee member) / Chakrabarti, Chaitali (Committee member) / Arizona State University (Publisher)
Created2014
Description
Limited Local Memory (LLM) multicore architectures are promising powerefficient architectures will scalable memory hierarchy. In LLM multicores, each core can access only a small local memory. Accesses to a large shared global memory can only be made explicitly through Direct Memory Access (DMA) operations. Standard Template Library (STL) is a powerful programming tool and is widely used for software development. STLs provide dynamic data structures, algorithms, and iterators for vector, deque (double-ended queue), list, map (red-black tree), etc. Since the size of the local memory is limited in the cores of the LLM architecture, and data transfer is not automatically supported by hardware cache or OS, the usage of current STL implementation on LLM multicores is limited. Specifically, there is a hard limitation on the amount of data they can handle. In this article, we propose and implement a framework which manages the STL container classes on the local memory of LLM multicore architecture. Our proposal removes the data size limitation of the STL, and therefore improves the programmability on LLM multicore architectures with little change to the original program. Our implementation results in only about 12%-17% increase in static library code size and reasonable runtime overheads.
ContributorsLu, Di (Author) / Shrivastava, Aviral (Thesis advisor) / Chatha, Karamvir (Committee member) / Dasgupta, Partha (Committee member) / Arizona State University (Publisher)
Created2012
Description
Multidimensional (MD) discrete Fourier transform (DFT) is a key kernel algorithm in many signal processing applications, such as radar imaging and medical imaging. Traditionally, a two-dimensional (2-D) DFT is computed using Row-Column (RC) decomposition, where one-dimensional (1-D) DFTs are computed along the rows followed by 1-D DFTs along the columns. However, architectures based on RC decomposition are not efficient for large input size data which have to be stored in external memories based Synchronous Dynamic RAM (SDRAM). In this dissertation, first an efficient architecture to implement 2-D DFT for large-sized input data is proposed. This architecture achieves very high throughput by exploiting the inherent parallelism due to a novel 2-D decomposition and by utilizing the row-wise burst access pattern of the SDRAM external memory. In addition, an automatic IP generator is provided for mapping this architecture onto a reconfigurable platform of Xilinx Virtex-5 devices. For a 2048x2048 input size, the proposed architecture is 1.96 times faster than RC decomposition based implementation under the same memory constraints, and also outperforms other existing implementations. While the proposed 2-D DFT IP can achieve high performance, its output is bit-reversed. For systems where the output is required to be in natural order, use of this DFT IP would result in timing overhead. To solve this problem, a new bandwidth-efficient MD DFT IP that is transpose-free and produces outputs in natural order is proposed. It is based on a novel decomposition algorithm that takes into account the output order, FPGA resources, and the characteristics of off-chip memory access. An IP generator is designed and integrated into an in-house FPGA development platform, AlgoFLEX, for easy verification and fast integration. The corresponding 2-D and 3-D DFT architectures are ported onto the BEE3 board and their performance measured and analyzed. The results shows that the architecture can maintain the maximum memory bandwidth throughout the whole procedure while avoiding matrix transpose operations used in most other MD DFT implementations. The proposed architecture has also been ported onto the Xilinx ML605 board. When clocked at 100 MHz, 2048x2048 images with complex single-precision can be processed in less than 27 ms. Finally, transpose-free imaging flows for range-Doppler algorithm (RDA) and chirp-scaling algorithm (CSA) in SAR imaging are proposed. The corresponding implementations take advantage of the memory access patterns designed for the MD DFT IP and have superior timing performance. The RDA and CSA flows are mapped onto a unified architecture which is implemented on an FPGA platform. When clocked at 100MHz, the RDA and CSA computations with data size 4096x4096 can be completed in 323ms and 162ms, respectively. This implementation outperforms existing SAR image accelerators based on FPGA and GPU.
ContributorsYu, Chi-Li (Author) / Chakrabarti, Chaitali (Thesis advisor) / Papandreou-Suppappola, Antonia (Committee member) / Karam, Lina (Committee member) / Cao, Yu (Committee member) / Arizona State University (Publisher)
Created2012
Description
In recent years, we have observed the prevalence of stream applications in many embedded domains. Stream programs distinguish themselves from traditional sequential programming languages through well defined independent actors, explicit data communication, and stable code/data access patterns. In order to achieve high performance and low power, scratch pad memory (SPM) has been introduced in today's embedded multicore processors. Current design frameworks for developing stream applications on SPM enhanced embedded architectures typically do not include a compiler that can perform automatic partitioning, mapping and scheduling under limited on-chip SPM capacities and memory access delays. Consequently, many designs are implemented manually, which leads to lengthy tasks and inferior designs. In this work, optimization techniques that automatically compile stream programs onto embedded multi-core architectures are proposed. As an initial case study, we implemented an automatic target recognition (ATR) algorithm on the IBM Cell Broadband Engine (BE). Then integer linear programming (ILP) and heuristic approaches were proposed to schedule stream programs on a single core embedded processor that has an SPM with code overlay. Later, ILP and heuristic approaches for Compiling Stream programs on SPM enhanced Multicore Processors (CSMP) were studied. The proposed CSMP ILP and heuristic approaches do not optimize for cycles in stream applications. Further, the number of software pipeline stages in the implementation is dependent on actor to processing engine (PE) mapping and is uncontrollable. We next presented a Retiming technique for Throughput optimization on Embedded Multi-core processors (RTEM). RTEM approach inherently handles cycles and can accept an upper bound on the number of software pipeline stages to be generated. We further enhanced RTEM by incorporating unrolling (URSTEM) that preserves all the beneficial properties of RTEM heuristic and also scales with the number of PEs through unrolling.
ContributorsChe, Weijia (Author) / Chatha, Karam Singh (Thesis advisor) / Vrudhula, Sarma (Committee member) / Chakrabarti, Chaitali (Committee member) / Shrivastava, Aviral (Committee member) / Arizona State University (Publisher)
Created2012
Description
The RADiation sensitive Field Effect Transistor (RADFET) has been conventionally used to measure radiation dose levels. These dose sensors are calibrated in such a way that a shift in threshold voltage, due to a build-up of oxide-trapped charge, can be used to estimate the radiation dose. In order to estimate the radiation dose level using RADFET, a wired readout circuit is necessary. Using the same principle of oxide-trapped charge build-up, but by monitoring the change in capacitance instead of threshold voltage, a wireless dose sensor can be developed. This RADiation sensitive CAPacitor (RADCAP) mounted on a resonant patch antenna can then become a wireless dose sensor. From the resonant frequency, the capacitance can be extracted which can be mapped back to estimate the radiation dose level. The capacitor acts as both radiation dose sensor and resonator element in the passive antenna loop. Since the MOS capacitor is used in passive state, characterizing various parameters that affect the radiation sensitivity is essential. Oxide processing technique, choice of insulator material, and thickness of the insulator, critically affect the dose response of the sensor. A thicker oxide improves the radiation sensitivity but reduces the dynamic range of dose levels for which the sensor can be used. The oxide processing scheme primarily determines the interface trap charge and oxide-trapped charge development; controlling this parameter is critical to building a better dose sensor.
ContributorsSrinivasan Gopalan, Madusudanan (Author) / Barnaby, Hugh (Thesis advisor) / Holbert, Keith E. (Committee member) / Yu, Hongyu (Committee member) / Arizona State University (Publisher)
Created2010
Description
The availability of a wide range of general purpose as well as accelerator cores on
modern smartphones means that a significant number of applications can be executed
on a smartphone simultaneously, resulting in an ever increasing demand on the memory
subsystem. While the increased computation capability is intended for improving
user experience, memory requests from each concurrent application exhibit unique
memory access patterns as well as specific timing constraints. If not considered, this
could lead to significant memory contention and result in lowered user experience.
This work first analyzes the impact of memory degradation caused by the interference
at the memory system for a broad range of commonly-used smartphone applications.
The real system characterization results show that smartphone applications,
such as web browsing and media playback, suffer significant performance degradation.
This is caused by shared resource contention at the application processor’s last-level
cache, the communication fabric, and the main memory.
Based on the detailed characterization results, rest of this thesis focuses on the
design of an effective memory interference mitigation technique. Since web browsing,
being one of the most commonly-used smartphone applications and represents many
html-based smartphone applications, my thesis focuses on meeting the performance
requirement of a web browser on a smartphone in the presence of background processes
and co-scheduled applications. My thesis proposes a light-weight user space frequency
governor to mitigate the degradation caused by interfering applications, by predicting
the performance and power consumption of web browsing. The governor selects an
optimal energy-efficient frequency setting periodically by using the statically-trained
performance and power models with dynamically-varying architecture and system
conditions, such as the memory access intensity of background processes and/or coscheduled applications, and temperature of cores. The governor has been extensively evaluated on a Nexus 5 smartphone over a diverse range of mobile workloads. By
operating at the most energy-efficient frequency setting in the presence of interference,
energy efficiency is improved by as much as 35% and with an average of 18% compared
to the existing interactive governor, while maintaining the satisfactory performance
of web page loading under 3 seconds.
modern smartphones means that a significant number of applications can be executed
on a smartphone simultaneously, resulting in an ever increasing demand on the memory
subsystem. While the increased computation capability is intended for improving
user experience, memory requests from each concurrent application exhibit unique
memory access patterns as well as specific timing constraints. If not considered, this
could lead to significant memory contention and result in lowered user experience.
This work first analyzes the impact of memory degradation caused by the interference
at the memory system for a broad range of commonly-used smartphone applications.
The real system characterization results show that smartphone applications,
such as web browsing and media playback, suffer significant performance degradation.
This is caused by shared resource contention at the application processor’s last-level
cache, the communication fabric, and the main memory.
Based on the detailed characterization results, rest of this thesis focuses on the
design of an effective memory interference mitigation technique. Since web browsing,
being one of the most commonly-used smartphone applications and represents many
html-based smartphone applications, my thesis focuses on meeting the performance
requirement of a web browser on a smartphone in the presence of background processes
and co-scheduled applications. My thesis proposes a light-weight user space frequency
governor to mitigate the degradation caused by interfering applications, by predicting
the performance and power consumption of web browsing. The governor selects an
optimal energy-efficient frequency setting periodically by using the statically-trained
performance and power models with dynamically-varying architecture and system
conditions, such as the memory access intensity of background processes and/or coscheduled applications, and temperature of cores. The governor has been extensively evaluated on a Nexus 5 smartphone over a diverse range of mobile workloads. By
operating at the most energy-efficient frequency setting in the presence of interference,
energy efficiency is improved by as much as 35% and with an average of 18% compared
to the existing interactive governor, while maintaining the satisfactory performance
of web page loading under 3 seconds.
ContributorsShingari, Davesh (Author) / Wu, Carole-Jean (Thesis advisor) / Vrudhula, Sarma (Committee member) / Shrivastava, Aviral (Committee member) / Arizona State University (Publisher)
Created2016
Description
Flash memories are critical for embedded devices to operate properly but are susceptible to radiation effects, which make flash memory a key factor to improve the reliability of circuitry. This thesis describes the simulation techniques used to analyze and predict total ionizing dose (TID) effects on 90-nm technology Silicon Storage Technology (SST) SuperFlash Generation 3 devices. Silvaco Atlas is used for both device level design and simulation purposes.
The simulations consist of no radiation and radiation modeling. The no radiation modeling details the cell structure development and characterizes basic operations (read, erase and program) of a flash memory cell. The program time is observed to be approximately 10 μs while the erase time is approximately 0.1 ms.
The radiation modeling uses the fixed oxide charge method to analyze the TID effects on the same flash memory cell. After irradiation, a threshold voltage shift of the flash memory cell is observed. The threshold voltages of a programmed cell and an erased cell are reduced at an average rate of 0.025 V/krad.
The use of simulation techniques allows designers to better understand the TID response of a SST flash memory cell and to predict cell level TID effects without performing the costly in-situ irradiation experiments. The simulation and experimental results agree qualitatively. In particular, simulation results reveal that ‘0’ to ‘1’ errors but not ‘1’ to ‘0’ retention errors occur; likewise, ‘0’ to ‘1’ errors dominate experimental testing, which also includes circuitry effects that can cause ‘1’ to ‘0’ failures. Both simulation and experimental results reveal flash memory cell TID resilience to about 200 krad.
The simulations consist of no radiation and radiation modeling. The no radiation modeling details the cell structure development and characterizes basic operations (read, erase and program) of a flash memory cell. The program time is observed to be approximately 10 μs while the erase time is approximately 0.1 ms.
The radiation modeling uses the fixed oxide charge method to analyze the TID effects on the same flash memory cell. After irradiation, a threshold voltage shift of the flash memory cell is observed. The threshold voltages of a programmed cell and an erased cell are reduced at an average rate of 0.025 V/krad.
The use of simulation techniques allows designers to better understand the TID response of a SST flash memory cell and to predict cell level TID effects without performing the costly in-situ irradiation experiments. The simulation and experimental results agree qualitatively. In particular, simulation results reveal that ‘0’ to ‘1’ errors but not ‘1’ to ‘0’ retention errors occur; likewise, ‘0’ to ‘1’ errors dominate experimental testing, which also includes circuitry effects that can cause ‘1’ to ‘0’ failures. Both simulation and experimental results reveal flash memory cell TID resilience to about 200 krad.
ContributorsChen, Yitao (Author) / Holbert, Keith E. (Thesis advisor) / Clark, Lawrence T. (Committee member) / Allee, David R. (Committee member) / Arizona State University (Publisher)
Created2016