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Description
In-band full-duplex relays are envisioned as promising solution to increase the throughput of next generation wireless communications. Full-duplex relays, being able to transmit and receive at same carrier frequency, offers increased spectral efficiency compared to half-duplex relays that transmit and receive at different frequencies or times. The practical implementation of

In-band full-duplex relays are envisioned as promising solution to increase the throughput of next generation wireless communications. Full-duplex relays, being able to transmit and receive at same carrier frequency, offers increased spectral efficiency compared to half-duplex relays that transmit and receive at different frequencies or times. The practical implementation of full-duplex relays is limited by the strong self-interference caused by the coupling of relay's own transit signals to its desired received signals. Several techniques have been proposed in literature to mitigate the relay self-interference. In this thesis, the performance of in-band full-duplex multiple-input multiple-output (MIMO) relays is considered in the context of simultaneous communications and channel estimation. In particular, adaptive spatial transmit techniques is considered to protect the full-duplex radio's receive array. It is assumed that relay's transmit and receive antenna phase centers are physically distinct. This allows the radio to employ adaptive spatial transmit and receive processing to mitigate self-interference.

The performance of this protection is dependent upon numerous factors, including channel estimation accuracy, which is the focus of this thesis. In particular, the concentration is on estimating the self-interference channel. A novel approach of simultaneous signaling to estimate the self-interference channel in MIMO full-duplex relays is proposed. To achieve this simultaneous communications

and channel estimation, a full-rank pilot signal at a reduced relative power is transmitted simultaneously with a low rank communication waveform. The self-interference mitigation is investigated in the context of eigenvalue spread of spatial relay receive co-variance matrix. Performance is demonstrated by using simulations,

in which orthogonal-frequency division-multiplexing communications and pilot sequences are employed.
ContributorsSekhar, Kishore Kumar (Author) / Bliss, Daniel W (Thesis advisor) / Kitchen, Jennifer (Committee member) / Zhang, Junshan (Committee member) / Arizona State University (Publisher)
Created2014
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Description
Carbon nanomaterials have caught tremendous attention in the last few decades due to their unique physical and chemical properties. Tremendous effort has been made to develop new synthesis techniques for carbon nanomaterials and investigate their properties for different applications. In this work, carbon nanospheres (CNSs), carbon foams (CF), and single-walled

Carbon nanomaterials have caught tremendous attention in the last few decades due to their unique physical and chemical properties. Tremendous effort has been made to develop new synthesis techniques for carbon nanomaterials and investigate their properties for different applications. In this work, carbon nanospheres (CNSs), carbon foams (CF), and single-walled carbon nanotubes (SWNTs) were studied for various applications, including water treatment, energy storage, actuators, and sensors.

A facile spray pyrolysis synthesis technique was developed to synthesize individual CNSs with specific surface area (SSA) up to 1106 m2/g. The hollow CNSs showed adsorption of up to 300 mg rhodamine B dye per gram carbon, which is more than 15 times higher than that observed for conventional carbon black. They were also evaluated as adsorbents for removal of arsenate and selenate from water and displayed good binding to both species, outperforming commercial activated carbons for arsenate removal in pH > 8. When evaluated as supercapacitor electrode materials, specific capacitances of up to 112 F/g at a current density of 0.1 A/g were observed. When used as Li-ion battery anode materials, the CNSs achieved a discharge capacity of 270 mAh/g at a current density of 372 mA/g (1C), which is 4-fold higher than that of commercial graphite anode.

Carbon foams were synthesized using direct pyrolysis and had SSA up to 2340 m2/g. When used as supercapacitor electrode materials, a specific capacitance up to 280 F/g was achieved at current density of 0.1 A/g and remained as high as 207 F/g, even at a high current density of 10 A/g.

A printed walking robot was made from common plastic films and coatings of SWNTs. The solid-state thermal bimorph actuators were multifunctional energy transducers powered by heat, light, or electricity. The actuators were also investigated for photo/thermal detection. Electrochemical actuators based on MnO2 were also studied for potential underwater applications.

SWNTs were also used to fabricate printable electrodes for trace Cr(VI) detection, which displayed sensitivity up to 500 nA/ppb for Cr(VI). The limit of detection was shown to be as low as 5 ppb. A flow detection system based on CNT/printed electrodes was also demonstrated.
ContributorsWang, Chengwei, Ph.D (Author) / Chan, Candace K. (Thesis advisor) / Tongay, Sefaattin (Committee member) / Wang, Qing Hua (Committee member) / Seo, Dong (Committee member) / Arizona State University (Publisher)
Created2015
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Description
This dissertation proposes and presents two different passive sigma-delta

modulator zoom Analog to Digital Converter (ADC) architectures. The first ADC is fullydifferential, synthesizable zoom-ADC architecture with a passive loop filter for lowfrequency Built in Self-Test (BIST) applications. The detailed ADC architecture and a step

by step process designing the zoom-ADC along with

This dissertation proposes and presents two different passive sigma-delta

modulator zoom Analog to Digital Converter (ADC) architectures. The first ADC is fullydifferential, synthesizable zoom-ADC architecture with a passive loop filter for lowfrequency Built in Self-Test (BIST) applications. The detailed ADC architecture and a step

by step process designing the zoom-ADC along with a synthesis tool that can target various

design specifications are presented. The design flow does not rely on extensive knowledge

of an experienced ADC designer. Two example set of BIST ADCs have been synthesized

with different performance requirements in 65nm CMOS process. The first ADC achieves

90.4dB Signal to Noise Ratio (SNR) in 512µs measurement time and consumes 17µW

power. Another example achieves 78.2dB SNR in 31.25µs measurement time and

consumes 63µW power. The second ADC architecture is a multi-mode, dynamically

zooming passive sigma-delta modulator. The architecture is based on a 5b interpolating

flash ADC as the zooming unit, and a passive discrete time sigma delta modulator as the

fine conversion unit. The proposed ADC provides an Oversampling Ratio (OSR)-

independent, dynamic zooming technique, employing an interpolating zooming front-end.

The modulator covers between 0.1 MHz and 10 MHz signal bandwidth which makes it

suitable for cellular applications including 4G radio systems. By reconfiguring the OSR,

bias current, and component parameters, optimal power consumption can be achieved for

every mode. The ADC is implemented in 0.13 µm CMOS technology and it achieves an

SNDR of 82.2/77.1/74.2/68 dB for 0.1/1.92/5/10MHz bandwidth with 1.3/5.7/9.6/11.9mW

power consumption from a 1.2 V supply.
ContributorsEROL, OSMAN EMIR (Author) / Ozev, Sule (Thesis advisor) / Kitchen, Jennifer (Committee member) / Ogras, Umit Y. (Committee member) / Blain-Christen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2018
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Description
There is an ever-increasing demand for higher bandwidth and data rate ensuing from exploding number of radio frequency integrated systems and devices. As stated in the Shannon-Hartley theorem, the maximum achievable data rate of a communication channel is linearly proportional to the system bandwidth. This is the main driving force

There is an ever-increasing demand for higher bandwidth and data rate ensuing from exploding number of radio frequency integrated systems and devices. As stated in the Shannon-Hartley theorem, the maximum achievable data rate of a communication channel is linearly proportional to the system bandwidth. This is the main driving force behind pushing wireless systems towards millimeter-wave frequency range, where larger bandwidth is available at a higher carrier frequency. Observing the Moor’s law, highly scaled complementary metal–oxide–semiconductor (CMOS) technologies provide fast transistors with a high unity power gain frequency which enables operating at millimeter-wave frequency range. CMOS is the compelling choice for digital and signal processing modules which concurrently offers high computation speed, low power consumption, and mass integration at a high manufacturing yield. One of the main shortcomings of the sub-micron CMOS technologies is the low breakdown voltage of the transistors that limits the dynamic range of the radio frequency (RF) power blocks, especially with the power amplifiers. Low voltage swing restricts the achievable output power which translates into low signal to noise ratio and degraded linearity. Extensive research has been done on proposing new design and IC fabrication techniques with the goal of generating higher output power in CMOS technology. The prominent drawbacks of these solutions are an increased die area, higher cost per design, and lower overall efficiency due to lossy passive components. In this dissertation, CMOS compatible metal–semiconductor field-effect transistor (MESFETs) are utilized to put forward a new solution to enhance the power amplifier’s breakdown voltage, gain and maximum output power. Requiring no change to the conventional CMOS process flow, this low cost approach allows direct incorporation of high voltage power MESFETs into silicon. High voltage MESFETs were employed in a cascode structure to push the amplifier’s cutoff frequency and unity power gain frequency to the 5G and K-band frequency range. This dissertation begins with CMOS compatible MESFET modeling and fabrication steps, and culminates in the discussion of amplifier design and optimization methodology, parasitic de-embedding steps, simulation and measurement results, and high resistivity RF substrate characterization.
ContributorsHabibiMehr, Payam (Author) / Thornton, Trevor John (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Formicone, Gabriele (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2019
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Description
Graphene is a very strong two-dimensional material with a lot of potential applications in microelectromechanical systems (MEMS). In this research, graphene is being optimized for use in a 5 m x 5 m graphene resonator. To work properly, this graphene resonator must have a uniform strain across all manufactured devices.

Graphene is a very strong two-dimensional material with a lot of potential applications in microelectromechanical systems (MEMS). In this research, graphene is being optimized for use in a 5 m x 5 m graphene resonator. To work properly, this graphene resonator must have a uniform strain across all manufactured devices. To reduce strain induced in graphene sheets grown for use in these resonators, evaporated platinum has been used in this investigation due to its relatively lower surface roughness compared to copper films. The final goal is to have the layer of ultrathin platinum (<=200 nm) deposited on the MEMS graphene resonator and used to grow graphene directly onto the devices to remove the manual transfer step due to its inscalability. After growth, graphene is coated with polymer and the platinum is then etched. This investigation concentrated on the transfer process of graphene onto Si/SiO2 substrate from the platinum films. It was determined that the ideal platinum etchant was aqua regia at a volumetric ratio of 6:3:1 (H2O:HCl:HNO3). This concentration was dilute enough to preserve the polymer and graphene layer, but strong enough to etch within a day. Type and thickness of polymer support layers were also investigated. PMMA at a thickness of 200 nm was ideal because it was easy to remove with acetone and strong enough to support the graphene during the etch process. A reference growth recipe was used in this investigation, but now that the transfer has been demonstrated, growth can be optimized for even thinner films.
ContributorsCayll, David Richard (Author) / Tongay, Sefaattin (Thesis director) / Lee, Hyunglae (Committee member) / Mechanical and Aerospace Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2016-12
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Description
The proposed research mainly focuses on employing tunable materials to achieve dynamic control of radiative heat transfer in both far and near fields for thermal management. Vanadium dioxide (VO2), which undergoes a phase transition from insulator to metal at the temperature of 341 K, is one tunable material being applied.

The proposed research mainly focuses on employing tunable materials to achieve dynamic control of radiative heat transfer in both far and near fields for thermal management. Vanadium dioxide (VO2), which undergoes a phase transition from insulator to metal at the temperature of 341 K, is one tunable material being applied. The other one is graphene, whose optical properties can be tuned by chemical potential through external bias or chemical doping.

In the far field, a VO2-based metamaterial thermal emitter with switchable emittance in the mid-infrared has been theoretically studied. When VO2 is in the insulating phase, high emittance is observed at the resonance frequency of magnetic polaritons (MPs), while the structure becomes highly reflective when VO2 turns metallic. A VO2-based thermal emitter with tunable emittance is also demonstrated due to the excitation of MP at different resonance frequencies when VO2 changes phase. Moreover, an infrared thermal emitter made of graphene-covered SiC grating could achieve frequency-tunable emittance peak via the change of the graphene chemical potential.

In the near field, a radiation-based thermal rectifier is constructed by investigating radiative transfer between VO2 and SiO2 separated by nanometer vacuum gap distances. Compared to the case where VO2 is set as the emitter at 400 K as a metal, when VO2 is considered as the receiver at 300 K as an insulator, the energy transfer is greatly enhanced due to the strong surface phonon polariton (SPhP) coupling between insulating VO2 and SiO2. A radiation-based thermal switch is also explored by setting VO2 as both the emitter and the receiver. When both VO2 emitter and receiver are at the insulating phase, the switch is at the “on” mode with a much enhanced heat flux due to strong SPhP coupling, while the near-field radiative transfer is greatly suppressed when the emitting VO2 becomes metallic at temperatures higher than 341K during the “off” mode. In addition, an electrically-gated thermal modulator made of graphene covered SiC plates is theoretically studied with modulated radiative transport by varying graphene chemical potential. Moreover, the MP effect on near-field radiative transport has been investigated by spectrally enhancing radiative heat transfer between two metal gratings.
ContributorsYang, Yue (Author) / Wang, Liping (Thesis advisor) / Phelan, Patrick (Committee member) / Wang, Robert (Committee member) / Tongay, Sefaattin (Committee member) / Rykaczewski, Konrad (Committee member) / Arizona State University (Publisher)
Created2016
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Description
A Fundamental study of bulk, layered, and monolayers bromide lead perovskites structural, optical, and electrical properties have been studied as thickness changes. X-Ray Diffraction (XRD) and Raman spectroscopy measures the structural parameter showing how the difference in the thicknesses changes the crystal structures through observing changes in average lattice constant,

A Fundamental study of bulk, layered, and monolayers bromide lead perovskites structural, optical, and electrical properties have been studied as thickness changes. X-Ray Diffraction (XRD) and Raman spectroscopy measures the structural parameter showing how the difference in the thicknesses changes the crystal structures through observing changes in average lattice constant, atomic spacing, and lattice vibrations.

Optical and electrical properties have also been studied mainly focusing on the thickness effect on different properties where the Photoluminescence (PL) and exciton binding energies show energy shift as thickness of the material changes. Temperature dependent PL has shown different characteristics when comparing methylammonium lead bromide (MAPbBr3) to butylammonium lead bromide (BA2PbBr4) and comparing the two layered n=1 materials butylammonium lead bromide (BA2PbBr4) to butylammonium lead iodide (BA2PbI4). Time-resolved spectroscopy displays different lifetimes as thickness of bromide-based perovskite changes. Finally, thickness dependence (starting from monolayers) Kelvin Probe Force Microscopy (KPFM) of the layered materials BA2PbBr4, Butylammonium(methylammonium)lead bromide (BA2MAPb2Br7), and molybdenum sulfide (MoS2) were studied showing an exponential relation between the thickness of the materials and their surface potentials.
ContributorsAlenezi, Omar (Author) / Tongay, Sefaattin (Thesis advisor) / King, Richard (Thesis advisor) / Yao, Yu (Committee member) / Arizona State University (Publisher)
Created2019
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Description
More recently there have been a tremendous advancement in theoretical studies showing remarkable properties that could be exploited from transition metal dichalcogenide (TMDC) Janus crystals through various applications. These Janus crystals are having a proven intrinsic electrical field due to breaking of out-of-plane inversion symmetry in a conventional TMDC when

More recently there have been a tremendous advancement in theoretical studies showing remarkable properties that could be exploited from transition metal dichalcogenide (TMDC) Janus crystals through various applications. These Janus crystals are having a proven intrinsic electrical field due to breaking of out-of-plane inversion symmetry in a conventional TMDC when one of the chalcogenides atomic layer is being completely replaced by a layer of different chalcogen element. However, due to lack of accurate processing control at nanometer scales, key for creating a highly crystalline Janus structure has not yet been familiarized. Thus, experimental characterization and implication of these Janus crystals are still in a state of stagnation. This work presents a new advanced methodology that could prove to be highly efficient and effective for selective replacement of top layer atomic sites at room temperature conditions.

This is specifically more focused on proving an easy repeatability for replacement of top atomic layer chalcogenide from a parent structure of already grown TMDC monolayer (via CVD) by a post plasma processing technique. Though this developed technique is not limited to only chalcogen atom replacement but can be extended to any type of surface functionalization requirements.

Basic characterization has been performed on the Janus crystal of SeMoS and SeWS where, creation and characterization of SeWS has been done for the very first time, evidencing a repeatable nature of the developed methodology.
ContributorsTrivedi, Dipesh (Author) / Tongay, Sefaattin (Thesis advisor) / Green, Matthew (Committee member) / Zhuang, Houlong (Committee member) / Arizona State University (Publisher)
Created2019