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- All Subjects: Metal semiconductor field-effect transistors
- All Subjects: nanotechnology
- Genre: Academic theses
- Genre: Masters Thesis
- Creators: Goryll, Michael
- Status: Published
Description
Biogenic silica nanostructures, derived from diatoms, possess highly ordered porous hierarchical nanostructures and afford flexibility in design in large part due to the availability of a great variety of shapes, sizes, and symmetries. These advantages have been exploited for study of transport phenomena of ions and molecules towards the goal of developing ultrasensitive and selective filters and biosensors. Diatom frustules give researchers many inspiration and ideas for the design and production of novel nanostructured materials. In this doctoral research will focus on the following three aspects of biogenic silica: 1) Using diatom frustule as protein sensor. 2) Using diatom nanostructures as template to fabricate nano metal materials. 3) Using diatom nanostructures to fabricate hybrid platform.
Nanoscale confinement biogenetic silica template-based electrical biosensor assay offers the user the ability to detect and quantify the biomolecules. Diatoms have been demonstrated as part of a sensor. The sensor works on the principle of electrochemical impedance spectroscopy. When specific protein biomarkers from a test sample bind to corresponding antibodies conjugated to the surface of the gold surface at the base of each nanowell, a perturbation of electrical double layer occurs resulting in a change in the impedance.
Diatoms are also a new source of inspiration for the design and fabrication of nanostructured materials. Template-directed deposition within cylindrical nanopores of a porous membrane represents an attractive and reproducible approach for preparing metal nanopatterns or nanorods of a variety of aspect ratios. The nanopatterns fabricated from diatom have the potential of the metal-enhanced fluorescence to detect dye-conjugated molecules.
Another approach presents a platform integrating biogenic silica nanostructures with micromachined silicon substrates in a micro
ano hybrid device. In this study, one can take advantages of the unique properties of a marine diatom that exhibits nanopores on the order of 40 nm in diameter and a hierarchical structure. This device can be used to several applications, such as nano particles separation and detection. This platform is also a good substrate to study cell growth that one can observe the reaction of cell growing on the nanostructure of frustule.
Nanoscale confinement biogenetic silica template-based electrical biosensor assay offers the user the ability to detect and quantify the biomolecules. Diatoms have been demonstrated as part of a sensor. The sensor works on the principle of electrochemical impedance spectroscopy. When specific protein biomarkers from a test sample bind to corresponding antibodies conjugated to the surface of the gold surface at the base of each nanowell, a perturbation of electrical double layer occurs resulting in a change in the impedance.
Diatoms are also a new source of inspiration for the design and fabrication of nanostructured materials. Template-directed deposition within cylindrical nanopores of a porous membrane represents an attractive and reproducible approach for preparing metal nanopatterns or nanorods of a variety of aspect ratios. The nanopatterns fabricated from diatom have the potential of the metal-enhanced fluorescence to detect dye-conjugated molecules.
Another approach presents a platform integrating biogenic silica nanostructures with micromachined silicon substrates in a micro
ano hybrid device. In this study, one can take advantages of the unique properties of a marine diatom that exhibits nanopores on the order of 40 nm in diameter and a hierarchical structure. This device can be used to several applications, such as nano particles separation and detection. This platform is also a good substrate to study cell growth that one can observe the reaction of cell growing on the nanostructure of frustule.
ContributorsLin, Kai-Chun (Author) / Ramakrishna, B.L. (Thesis advisor) / Goryll, Michael (Thesis advisor) / Dey, Sandwip (Committee member) / Prasad, Shalini (Committee member) / Arizona State University (Publisher)
Created2014
Description
There will always be a need for high current/voltage transistors. A transistor that has the ability to be both or either of these things is the silicon metal-silicon field effect transistor (MESFET). An additional perk that silicon MESFET transistors have is the ability to be integrated into the standard silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) process flow. This makes a silicon MESFET transistor a very valuable device for use in any standard CMOS circuit that may usually need a separate integrated circuit (IC) in order to switch power on or from a high current/voltage because it allows this function to be performed with a single chip thereby cutting costs. The ability for the MESFET to cost effectively satisfy the needs of this any many other high current/voltage device application markets is what drives the study of MESFET optimization. Silicon MESFETs that are integrated into standard SOI CMOS processes often receive dopings during fabrication that would not ideally be there in a process made exclusively for MESFETs. Since these remnants of SOI CMOS processing effect the operation of a MESFET device, their effect can be seen in the current-voltage characteristics of a measured MESFET device. Device simulations are done and compared to measured silicon MESFET data in order to deduce the cause and effect of many of these SOI CMOS remnants. MESFET devices can be made in both fully depleted (FD) and partially depleted (PD) SOI CMOS technologies. Device simulations are used to do a comparison of FD and PD MESFETs in order to show the advantages and disadvantages of MESFETs fabricated in different technologies. It is shown that PD MESFET have the highest current per area capability. Since the PD MESFET is shown to have the highest current capability, a layout optimization method to further increase the current per area capability of the PD silicon MESFET is presented, derived, and proven to a first order.
ContributorsSochacki, John (Author) / Thornton, Trevor J (Thesis advisor) / Schroder, Dieter (Committee member) / Vasileska, Dragica (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2011
Description
In the last few years, significant advances in nanofabrication have allowed tailoring of structures and materials at a molecular level enabling nanofabrication with precise control of dimensions and organization at molecular length scales, a development leading to significant advances in nanoscale systems. Although, the direction of progress seems to follow the path of microelectronics, the fundamental physics in a nanoscale system changes more rapidly compared to microelectronics, as the size scale is decreased. The changes in length, area, and volume ratios due to reduction in size alter the relative influence of various physical effects determining the overall operation of a system in unexpected ways. One such category of nanofluidic structures demonstrating unique ionic and molecular transport characteristics are nanopores. Nanopores derive their unique transport characteristics from the electrostatic interaction of nanopore surface charge with aqueous ionic solutions. In this doctoral research cylindrical nanopores, in single and array configuration, were fabricated in silicon-on-insulator (SOI) using a combination of electron beam lithography (EBL) and reactive ion etching (RIE). The fabrication method presented is compatible with standard semiconductor foundries and allows fabrication of nanopores with desired geometries and precise dimensional control, providing near ideal and isolated physical modeling systems to study ion transport at the nanometer level. Ion transport through nanopores was characterized by measuring ionic conductances of arrays of nanopores of various diameters for a wide range of concentration of aqueous hydrochloric acid (HCl) ionic solutions. Measured ionic conductances demonstrated two distinct regimes based on surface charge interactions at low ionic concentrations and nanopore geometry at high ionic concentrations. Field effect modulation of ion transport through nanopore arrays, in a fashion similar to semiconductor transistors, was also studied. Using ionic conductance measurements, it was shown that the concentration of ions in the nanopore volume was significantly changed when a gate voltage on nanopore arrays was applied, hence controlling their transport. Based on the ion transport results, single nanopores were used to demonstrate their application as nanoscale particle counters by using polystyrene nanobeads, monodispersed in aqueous HCl solutions of different molarities. Effects of field effect modulation on particle transition events were also demonstrated.
ContributorsJoshi, Punarvasu (Author) / Thornton, Trevor J (Thesis advisor) / Goryll, Michael (Thesis advisor) / Spanias, Andreas (Committee member) / Saraniti, Marco (Committee member) / Arizona State University (Publisher)
Created2011
Description
The high cut-off frequency of deep sub-micron CMOS technologies has enabled the integration of radio frequency (RF) transceivers with digital circuits. However, the challenging point is the integration of RF power amplifiers, mainly due to the low breakdown voltage of CMOS transistors. Silicon-on-insulator (SOI) metal semiconductor field effect transistors (MESFETs) have been introduced to remedy the limited headroom concern in CMOS technologies. The MESFETs presented in this thesis have been fabricated on different SOI-CMOS processes without making any change to the standard fabrication steps and offer 2-30 times higher breakdown voltage than the MOSFETs on the same process. This thesis explains the design steps of high efficiency and wideband RF transmitters using the proposed SOI-CMOS compatible MESFETs. This task involves DC and RF characterization of MESFET devices, along with providing a compact Spice model for simulation purposes. This thesis presents the design of several SOI-MESFET RF power amplifiers operating at 433, 900 and 1800 MHz with ~40% bandwidth. Measurement results show a peak power added efficiency (PAE) of 55% and a peak output power of 22.5 dBm. The RF-PAs were designed to operate in Class-AB mode to minimize the linearity degradation. Class-AB power amplifiers lead to poor power added efficiency, especially when fed with signals with high peak to average power ratio (PAPR) such as wideband code division multiple access (W-CDMA). Polar transmitters have been introduced to improve the efficiency of RF-PAs at backed-off powers. A MESFET based envelope tracking (ET) polar transmitter was designed and measured. A low drop-out voltage regulator (LDO) was used as the supply modulator of this polar transmitter. MESFETs are depletion mode devices; therefore, they can be configured in a source follower configuration to have better stability and higher bandwidth that MOSFET based LDOs. Measurement results show 350 MHz bandwidth while driving a 10 pF capacitive load. A novel polar transmitter is introduced in this thesis to alleviate some of the limitations associated with polar transmitters. The proposed architecture uses the backgate terminal of a partially depleted transistor on SOI process, which relaxes the bandwidth and efficiency requirements of the envelope amplifier in a polar transmitter. The measurement results of the proposed transmitter demonstrate more than three times PAE improvement at 6-dB backed-off output power, compared to the traditional RF transmitters.
ContributorsGhajar, Mohammad Reza (Author) / Thornton, Trevor (Thesis advisor) / Aberle, James T., 1961- (Committee member) / Bakkaloglu, Bertan (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2012
Description
In the nano-regime many materials exhibit properties that are quite different from their bulk counterparts. These nano-properties have been shown to be useful in a wide range of applications with nanomaterials being used for catalysts, in energy production, as protective coatings, and in medical treatment. While there is no shortage of exciting and novel applications, the world of nanomaterials suffers from a lack of large scale manufacturing techniques. The current methods and equipment used for manufacturing nanomaterials are generally slow, expensive, potentially dangerous, and material specific. The research and widespread use of nanomaterials has undoubtedly been hindered by this lack of appropriate tooling. This work details the effort to create a novel nanomaterial synthesis and deposition platform capable of operating at industrial level rates and reliability.
The tool, referred to as Deppy, deposits material via hypersonic impaction, a two chamber process that takes advantage of compressible fluids operating in the choked flow regime to accelerate particles to up several thousand meters per second before they impact and stick to the substrate. This allows for the energetic separation of the synthesis and deposition processes while still behaving as a continuous flow reactor giving Deppy the unique ability to independently control the particle properties and the deposited film properties. While the ultimate goal is to design a tool capable of producing a broad range of nanomaterial films, this work will showcase Deppy's ability to produce silicon nano-particle films as a proof of concept.
By adjusting parameters in the upstream chamber the particle composition was varied from completely amorphous to highly crystalline as confirmed by Raman spectroscopy. By adjusting parameters in the downstream chamber significant variation of the film's density was achieved. Further it was shown that the system is capable of making these adjustments in each chamber without affecting the operation of the other.
The tool, referred to as Deppy, deposits material via hypersonic impaction, a two chamber process that takes advantage of compressible fluids operating in the choked flow regime to accelerate particles to up several thousand meters per second before they impact and stick to the substrate. This allows for the energetic separation of the synthesis and deposition processes while still behaving as a continuous flow reactor giving Deppy the unique ability to independently control the particle properties and the deposited film properties. While the ultimate goal is to design a tool capable of producing a broad range of nanomaterial films, this work will showcase Deppy's ability to produce silicon nano-particle films as a proof of concept.
By adjusting parameters in the upstream chamber the particle composition was varied from completely amorphous to highly crystalline as confirmed by Raman spectroscopy. By adjusting parameters in the downstream chamber significant variation of the film's density was achieved. Further it was shown that the system is capable of making these adjustments in each chamber without affecting the operation of the other.
ContributorsFirth, Peter (Author) / Holman, Zachary C (Thesis advisor) / Kozicki, Michael (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2015
Description
The partially-depleted (PD) silicon Metal Semiconductor Field Effect Transistor (MESFET) is becoming more and more attractive for analog and RF applications due to its high breakdown voltage. Compared to conventional CMOS high voltage transistors, the silicon MESFET can be fabricated in commercial standard Silicon-on-Insulator (SOI) CMOS foundries without any change to the process. The transition frequency of the device is demonstrated to be 45GHz, which makes the MESFET suitable for applications in high power RF power amplifier designs. Also, high breakdown voltage and low turn-on resistance make it the ideal choice for switches in the switching regulator designs. One of the anticipated applications of the MESFET is for the pass device for a low dropout linear regulator. Conventional NMOS and PMOS linear regulators suffer from high dropout voltage, low bandwidth and poor stability issues. In contrast, the N-MESFET pass transistor can provide an ultra-low dropout voltage and high bandwidth without the need for an external compensation capacitor to ensure stability. In this thesis, the design theory and problems of the conventional linear regulators are discussed. N-MESFET low dropout regulators are evaluated and characterized. The error amplifier used a folded cascode architecture with gain boosting. The source follower topology is utilized as the buffer to sink the gate leakage current from the MESFET. A shunt-feedback transistor is added to reduce the output impedance and provide the current adaptively. Measurement results show that the dropout voltage is less than 150 mV for a 1A load current at 1.8V output. Radiation measurements were done for discrete MESFET and fully integrated LDO regulators, which demonstrate their radiation tolerance ability for aerospace applications.
ContributorsChen, Bo (Author) / Thornton, Trevor (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
The constant scaling of supply voltages in state-of-the-art CMOS processes has led to severe limitations for many analog circuit applications. Some CMOS processes have addressed this issue by adding high voltage MOSFETs to their process. Although it can be a completely viable solution, it usually requires a changing of the process flow or adding additional steps, which in turn, leads to an increase in fabrication costs. Si-MESFETs (silicon-metal-semiconductor-field-effect-transistors) from Arizona State University (ASU) on the other hand, have an inherent high voltage capability and can be added to any silicon-on-insulator (SOI) or silicon-on-sapphire (SOS) CMOS process free of cost. This has been proved at five different commercial foundries on technologies ranging from 0.5 to 0.15 μm. Another critical issue facing CMOS processes on insulated substrates is the scaling of the thin silicon channel. Consequently, the future direction of SOI/SOS CMOS transistors may trend away from partially depleted (PD) transistors and towards fully depleted (FD) devices. FD-CMOS are already being implemented in multiple applications due to their very low power capability. Since the FD-CMOS market only figures to grow, it is appropriate that MESFETs also be developed for these processes. The beginning of this thesis will focus on the device aspects of both PD and FD-MESFETs including their layout structure, DC and RF characteristics, and breakdown voltage. The second half will then shift the focus towards implementing both types of MESFETs in an analog circuit application. Aside from their high breakdown ability, MESFETs also feature depletion mode operation, easy to adjust but well controlled threshold voltages, and fT's up to 45 GHz. Those unique characteristics can allow certain designs that were previously difficult to implement or prohibitively expensive using conventional technologies to now be achieved. One such application which benefits is low dropout regulators (LDO). By utilizing an n-channel MESFET as the pass transistor, a LDO featuring very low dropout voltage, fast transient response, and stable operation can be achieved without an external capacitance. With the focus of this thesis being MESFET based LDOs, the device discussion will be mostly tailored towards optimally designing MESFETs for this particular application.
ContributorsLepkowski, William (Author) / Thornton, Trevor (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Goryll, Michael (Committee member) / Ayyanar, Raja (Committee member) / Arizona State University (Publisher)
Created2010
Description
Silicon Carbide (SiC) junction field effect transistors (JFETs) are ideal for switching high current, high voltage loads in high temperature environments. These devices require external drive circuits to generate pulse width modulated (PWM) signals switching from 0V to approximately 10V. Advanced CMOS microcontrollers are ideal for generating the PWM signals but are limited in output voltage due to their low breakdown voltage within the CMOS drive circuits. As a result, an intermediate buffer stage is required between the CMOS circuitry and the JFET. In this thesis, a discrete silicon-on-insulator (SOI) metal semiconductor field effect transistor (MESFET) was used to drive the gate of a SiC power JFET switching a 120V RMS AC supply into a 30Ω load. The wide operating temperature range and high breakdown voltage of up to 50V make the SOI MESFET ideal for power electronics in extreme environments. Characteristic curves for the MESFET were measured up to 250°C.; To drive the JFET, the MESFET was DC biased and then driven by a 1.2V square wave PWM signal to switch the JFET gate from 0 to 10V at frequencies up to 20kHz. For simplicity, the 1.2V PWM square wave signal was provided by a 555 timer. The JFET gate drive circuit was measured at high temperatures up to 235°C.; The circuit operated well at the high temperatures without any damage to the SOI MESFET or SiC JFET. The drive current of the JFET was limited by the duty cycle range of the 555 timer used. The SiC JFET drain current decreased with increased temperature. Due to the easy integration of MESFETs into SOI CMOS processes, MESFETs can be fabricated alongside MOSFETs without any changes in the process flow. This thesis demonstrates the feasibility of integrating a MESFET with CMOS PWM circuitry for a completely integrated SiC driver thus eliminating the need for the intermediate buffer stage.
ContributorsSummers, Nicholas, M.S (Author) / Thornton, Trevor J (Thesis advisor) / Goryll, Michael (Committee member) / Schroder, Dieter (Committee member) / Arizona State University (Publisher)
Created2010
Description
Design and development of optical sensors for the detection of specific targets, e.g., ions, molecules, proteins, light polarizations, is one of the most essential research topics in the field of nanophotonics that paves the way for significant technological progressions in chemical and biomarker detections, polarimetric imaging and other sensing related applications. In this dissertation, three designs of optical sensors based on plasmonic and dielectric nanostructures are thoroughly studied for the applications in chemicals, biomarkers and light polarization detection. Firstly, a plasmonic nanoantenna structure, which is composed of complementary anisotropic nanobars and nanoapertures featuring strong localized electric field enhancement at nanogap region, demonstrates both high sensitivity refractometric detection and specific infrared fingerprint detection for chemical sensing. Specifically, the sensor can probe monolayer thin octadecanethiol with a large resonance shift of 136 nm and all four characteristic infrared fingerprints detected. Secondly, a bio-inspired double-layered metasurface structure, which is made of dielectric nanoantenna and plasmonic nanogratings, mediates strong optical chirality and enables the selection of circularly polarized light handedness (extinction ratio ≥ 35) with high transmission efficiency (≥ 80%). The structure can be further integrated on-chip with linear polarizers for highly precise full-Stokes polarimetric detection with minimum transmission loss. Lastly, a gold nanoparticle based colorimetric assay is designed for high sensitivity, specificity and rapid detection of infectious diseases related biomarkers. The complete design workflows from critical reagents productions, rapid detection protocol to assay characterizations are extensively studied. Detection of Ebola virus disease biomarker, secreted glycoprotein, within 20 minutes are experimentally demonstrated with limit of detection down to ~40 pM and a broad detection range from 10 pM to 1 µM.
The designs of the three sensors propose novel and versatile design concepts for the development of sensing devices in the detection of chemicals, biomarkers and light polarization. The efforts in the fundamental theoretical analysis and experimental demonstrations are expected to provide valuable contents to the optical sensor researches and to potentially inspire new sensor designs for broad sensing applications in the future.
ContributorsChen, Xiahui (Author) / Wang, Chao (Thesis advisor) / Zhao, Yuji (Committee member) / Wang, Liping (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2021