Matching Items (11)
Filtering by

Clear all filters

153545-Thumbnail Image.png
Description
For decades, microelectronics manufacturing has been concerned with failures related to electromigration phenomena in conductors experiencing high current densities. The influence of interconnect microstructure on device failures related to electromigration in BGA and flip chip solder interconnects has become a significant interest with reduced individual solder interconnect volumes. A survey

For decades, microelectronics manufacturing has been concerned with failures related to electromigration phenomena in conductors experiencing high current densities. The influence of interconnect microstructure on device failures related to electromigration in BGA and flip chip solder interconnects has become a significant interest with reduced individual solder interconnect volumes. A survey indicates that x-ray computed micro-tomography (µXCT) is an emerging, novel means for characterizing the microstructures' role in governing electromigration failures. This work details the design and construction of a lab-scale µXCT system to characterize electromigration in the Sn-0.7Cu lead-free solder system by leveraging in situ imaging.

In order to enhance the attenuation contrast observed in multi-phase material systems, a modeling approach has been developed to predict settings for the controllable imaging parameters which yield relatively high detection rates over the range of x-ray energies for which maximum attenuation contrast is expected in the polychromatic x-ray imaging system. In order to develop this predictive tool, a model has been constructed for the Bremsstrahlung spectrum of an x-ray tube, and calculations for the detector's efficiency over the relevant range of x-ray energies have been made, and the product of emitted and detected spectra has been used to calculate the effective x-ray imaging spectrum. An approach has also been established for filtering `zinger' noise in x-ray radiographs, which has proven problematic at high x-ray energies used for solder imaging. The performance of this filter has been compared with a known existing method and the results indicate a significant increase in the accuracy of zinger filtered radiographs.

The obtained results indicate the conception of a powerful means for the study of failure causing processes in solder systems used as interconnects in microelectronic packaging devices. These results include the volumetric quantification of parameters which are indicative of both electromigration tolerance of solders and the dominant mechanisms for atomic migration in response to current stressing. This work is aimed to further the community's understanding of failure-causing electromigration processes in industrially relevant material systems for microelectronic interconnect applications and to advance the capability of available characterization techniques for their interrogation.
ContributorsMertens, James Charles Edwin (Author) / Chawla, Nikhilesh (Thesis advisor) / Alford, Terry (Committee member) / Jiao, Yang (Committee member) / Neithalath, Narayanan (Committee member) / Arizona State University (Publisher)
Created2015
152439-Thumbnail Image.png
Description
As one of the most promising materials for high capacity electrode in next generation of lithium ion batteries, silicon has attracted a great deal of attention in recent years. Advanced characterization techniques and atomic simulations helped to depict that the lithiation/delithiation of silicon electrode involves processes including large volume change

As one of the most promising materials for high capacity electrode in next generation of lithium ion batteries, silicon has attracted a great deal of attention in recent years. Advanced characterization techniques and atomic simulations helped to depict that the lithiation/delithiation of silicon electrode involves processes including large volume change (anisotropic for the initial lithiation of crystal silicon), plastic flow or softening of material dependent on composition, electrochemically driven phase transformation between solid states, anisotropic or isotropic migration of atomic sharp interface, and mass diffusion of lithium atoms. Motivated by the promising prospect of the application and underlying interesting physics, mechanics coupled with multi-physics of silicon electrodes in lithium ion batteries is studied in this dissertation. For silicon electrodes with large size, diffusion controlled kinetics is assumed, and the coupled large deformation and mass transportation is studied. For crystal silicon with small size, interface controlled kinetics is assumed, and anisotropic interface reaction is studied, with a geometry design principle proposed. As a preliminary experimental validation, enhanced lithiation and fracture behavior of silicon pillars via atomic layer coatings and geometry design is studied, with results supporting the geometry design principle we proposed based on our simulations. Through the work documented here, a consistent description and understanding of the behavior of silicon electrode is given at continuum level and some insights for the future development of the silicon electrode are provided.
ContributorsAn, Yonghao (Author) / Jiang, Hanqing (Thesis advisor) / Chawla, Nikhilesh (Committee member) / Phelan, Patrick (Committee member) / Wang, Yinming (Committee member) / Yu, Hongyu (Committee member) / Arizona State University (Publisher)
Created2014
150889-Thumbnail Image.png
Description
Pb-free solder joints are commonly used as interconnects in semiconductor packaging. One of the major defects affecting the mechanical performance of solder joints are reflow pores that form during processing. These pores exhibit significant variability in size and distribution, and understanding the effects of pore geometry on failure is an

Pb-free solder joints are commonly used as interconnects in semiconductor packaging. One of the major defects affecting the mechanical performance of solder joints are reflow pores that form during processing. These pores exhibit significant variability in size and distribution, and understanding the effects of pore geometry on failure is an important reliability concern. In this thesis, the pore microstructures of solder joint samples and the localized plastic deformation around individual pores was characterized in 3D using lab scale X-ray Microtomography. To observe the deformation of a solder joint in 3D, a solder joint was imaged with Microtomography after reflow and then deformed in shear in several loading steps with additional tomography data taken between each. The 3D tomography datasets were then segmented using the 3D Livewire technique into regions corresponding to solder and pores, and used to generate 3D models of the joint at each strain value using Mimics software. The extent of deformation of individual pores in the joint as a function of strain was quantified using sphericity measurements, and correlated with the observed cracking in the joint. In addition, the error inherent in the data acquisition and 3D modeling process was also quantified. The progression of damage observed with X-ray Microtomography was then used to validate the deformation and failure predicted by a Finite Element (FE) simulation. The FE model was based on the as-reflowed tomography data, and incorporated a ductile damage failure model to simulate fracture. Using the measured sphericity change and cracking information obtained from the tomography data, the FE model is shown to correctly capture the broad plastic deformation and strain localization seen in the actual joint, as well as the crack propagation. Lastly, Digital Image Correlation was investigated as a method of obtaining improved local strain measurements in 3D. This technique measures the displacement of the inherent microstructural features of the joint, and can give localized strain measurements that can be directly comparable to that predicted by modeling. The technique is demonstrated in 2D on Pb-Sn solder, and example 3D data is presented for future analysis.
ContributorsPadilla, Erick (Author) / Chawla, Nikhilesh (Thesis advisor) / Alford, Terry (Committee member) / Krause, Stephen (Committee member) / Arizona State University (Publisher)
Created2012
151236-Thumbnail Image.png
Description
With increasing concerns of the intrinsic toxicity of lead (Pb) in electronics, a series of tin (Sn) based alloys involving silver (Ag) and copper (Cu) have been proposed as replacements for Pb-Sn solder and widely accepted by industry. However, they have a higher melting point and often exhibit poorer damage

With increasing concerns of the intrinsic toxicity of lead (Pb) in electronics, a series of tin (Sn) based alloys involving silver (Ag) and copper (Cu) have been proposed as replacements for Pb-Sn solder and widely accepted by industry. However, they have a higher melting point and often exhibit poorer damage tolerance than Pb-Sn alloys. Recently, a new class of alloys with trace amount of rare-earth (RE) elements has been discovered and investigated. In previous work from Prof. Chawla's group, it has been shown that cerium (Ce)-based Pb-free solder are less prone to oxidation and Sn whiskering, and exhibit desirable attributes of microstructural refinement and enhanced ductility relative to lanthanum (La)-based Sn-3.9Ag-0.7Cu (SAC) alloy. Although the formation of RESn3 was believed to be directly responsible for the enhanced ductility in RE-containing SAC solder by allowing microscopic voids to nucleate throughout the solder volume, this cavitation-based mechanism needs to be validated experimentally and numerically. Additionally, since the previous study has exhibited the realistic feasibility of Ce-based SAC lead-free solder alloy as a replacement to conventional SAC alloys, in this study, the proposed objective focuses on the in in-depth understanding of mechanism of enhanced ductility in Ce-based SAC alloy and possible issues associated with integration of this new class of solder into electronic industry, including: (a) study of long-term thermal and mechanical stability on industrial metallization, (b) examine the role of solder volume and wetting behavior of the new solder, relative to Sn-3.9Ag-0.7Cu alloys, (c) conduct experiments of new solder alloys in the form of mechanical shock and electromigration. The research of this new class alloys will be conducted in industrially relevant conditions, and the results would serve as the first step toward integration of these new, next generation solders into the industry.
ContributorsXie, Huxiao (Author) / Chawla, Nikhilesh (Thesis advisor) / Krause, Stephen (Committee member) / Solanki, Kiran (Committee member) / Mirpuri, Kabir (Committee member) / Arizona State University (Publisher)
Created2012
154124-Thumbnail Image.png
Description
The objective of this research is to develop robust, accurate, and adaptive algorithms in the framework of the extended finite element method (XFEM) for fracture analysis of highly heterogeneous materials with complex internal geometries. A key contribution of this work is the creation of novel methods designed to automate the

The objective of this research is to develop robust, accurate, and adaptive algorithms in the framework of the extended finite element method (XFEM) for fracture analysis of highly heterogeneous materials with complex internal geometries. A key contribution of this work is the creation of novel methods designed to automate the incorporation of high-resolution data, e.g. from X-ray tomography, that can be used to better interpret the enormous volume of data generated in modern in-situ experimental testing. Thus new algorithms were developed for automating analysis of complex microstructures characterized by segmented tomographic images.

A centrality-based geometry segmentation algorithm was developed to accurately identify discrete inclusions and particles in composite materials where limitations in imaging resolution leads to spurious connections between particles in close contact.To allow for this algorithm to successfully segment geometry independently of particle size and shape, a relative centrality metric was defined to allow for a threshold centrality criterion for removal of voxels that spuriously connect distinct geometries.

To automate incorporation of microstructural information from high-resolution images, two methods were developed that initialize signed distance fields on adaptively-refined finite element meshes. The first method utilizes a level set evolution equation that is directly solved on the finite element mesh through Galerkins method. The evolution equation is formulated to produce a signed distance field that matches geometry defined by a set of voxels segmented from tomographic images. The method achieves optimal convergence for the order of elements used. In a second approach, the fast marching method is employed to initialize a distance field on a uniform grid which is then projected by least squares onto a finite element mesh. This latter approach is shown to be superior in speed and accuracy.

Lastly, extended finite element method simulations are performed for the analysis of particle fracture in metal matrix composites with realistic particle geometries initialized from X-ray tomographic data. In the simulations, particles fracture probabilistically through a Weibull strength distribution. The model is verified through comparisons with the experimentally-measured stress-strain response of the material as well as analysis of the fracture. Further, simulations are then performed to analyze the effect of mesh sensitivity, the effect of fracture of particles on their neighbors, and the role of a particles shape on its fracture probability.
ContributorsYuan, Rui (Author) / Oswald, Jay (Thesis advisor) / Chawla, Nikhilesh (Committee member) / Liu, Yongming (Committee member) / Solanki, Kiran (Committee member) / Chen, Kangping (Committee member) / Arizona State University (Publisher)
Created2015
153941-Thumbnail Image.png
Description
Hydrogen embrittlement (HE) is a phenomenon that affects both the physical and chemical properties of several intrinsically ductile metals. Consequently, understanding the mechanisms behind HE has been of particular interest in both experimental and modeling research. Discrepancies between experimental observations and modeling results have led to various proposals for HE

Hydrogen embrittlement (HE) is a phenomenon that affects both the physical and chemical properties of several intrinsically ductile metals. Consequently, understanding the mechanisms behind HE has been of particular interest in both experimental and modeling research. Discrepancies between experimental observations and modeling results have led to various proposals for HE mechanisms. Therefore, to gain insights into HE mechanisms in iron, this dissertation aims to investigate several key issues involving HE such as: a) the incipient crack tip events; b) the cohesive strength of grain boundaries (GBs); c) the dislocation-GB interactions and d) the dislocation mobility.

The crack tip, which presents a preferential trap site for hydrogen segregation, was examined using atomistic methods and the continuum based Rice-Thompson criterion as sufficient concentration of hydrogen can alter the crack tip deformation mechanism. Results suggest that there is a plausible co-existence of the adsorption induced dislocation emission and hydrogen enhanced decohesion mechanisms. In the case of GB-hydrogen interaction, we observed that the segregation of hydrogen along the interface leads to a reduction in cohesive strength resulting in intergranular failure. A methodology was further developed to quantify the role of the GB structure on this behavior.

GBs play a fundamental role in determining the strengthening mechanisms acting as an impediment to the dislocation motion; however, the presence of an unsurmountable barrier for a dislocation can generate slip localization that could further lead to intergranular crack initiation. It was found that the presence of hydrogen increases the strain energy stored within the GB which could lead to a transition in failure mode. Finally, in the case of body centered cubic metals, understanding the complex screw dislocation motion is critical to the development of an accurate continuum description of the plastic behavior. Further, the presence of hydrogen has been shown to drastically alter the plastic deformation, but the precise role of hydrogen is still unclear. Thus, the role of hydrogen on the dislocation mobility was examined using density functional theory and atomistic simulations. Overall, this dissertation provides a novel atomic-scale understanding of the HE mechanism and development of multiscale tools for future endeavors.
ContributorsAdlakha, Ilaksh (Author) / Solanki, Kiran (Thesis advisor) / Mignolet, Marc (Committee member) / Chawla, Nikhilesh (Committee member) / Jiang, Hanqing (Committee member) / Liu, Yongming (Committee member) / Arizona State University (Publisher)
Created2015
156024-Thumbnail Image.png
Description
7XXX Aluminum alloys have high strength to weight ratio and low cost. They are used in many critical structural applications including automotive and aerospace components. These applications frequently subject the alloys to static and cyclic loading in service. Additionally, the alloys are often subjected to aggressive corrosive environments such as

7XXX Aluminum alloys have high strength to weight ratio and low cost. They are used in many critical structural applications including automotive and aerospace components. These applications frequently subject the alloys to static and cyclic loading in service. Additionally, the alloys are often subjected to aggressive corrosive environments such as saltwater spray. These chemical and mechanical exposures have been known to cause premature failure in critical applications. Hence, the microstructural behavior of the alloys under combined chemical attack and mechanical loading must be characterized further. Most studies to date have analyzed the microstructure of the 7XXX alloys using two dimensional (2D) techniques. While 2D studies yield valuable insights about the properties of the alloys, they do not provide sufficiently accurate results because the microstructure is three dimensional and hence its response to external stimuli is also three dimensional (3D). Relevant features of the alloys include the grains, subgrains, intermetallic inclusion particles, and intermetallic precipitate particles. The effects of microstructural features on corrosion pitting and corrosion fatigue of aluminum alloys has primarily been studied using 2D techniques such as scanning electron microscopy (SEM) surface analysis along with post-mortem SEM fracture surface analysis to estimate the corrosion pit size and fatigue crack initiation site. These studies often limited the corrosion-fatigue testing to samples in air or specialized solutions, because samples tested in NaCl solution typically have fracture surfaces covered in corrosion product. Recent technological advancements allow observation of the microstructure, corrosion and crack behavior of aluminum alloys in solution in three dimensions over time (4D). In situ synchrotron X-Ray microtomography was used to analyze the corrosion and cracking behavior of the alloy in four dimensions to elucidate crack initiation at corrosion pits for samples of multiple aging conditions and impurity concentrations. Additionally, chemical reactions between the 3.5 wt% NaCl solution and the crack surfaces were quantified by observing the evolution of hydrogen bubbles from the crack. The effects of the impurity particles and age-hardening particles on the corrosion and fatigue properties were examined in 4D.
ContributorsStannard, Tyler (Author) / Chawla, Nikhilesh (Thesis advisor) / Solanki, Kiran N (Committee member) / Goswami, Ramasis (Committee member) / Liu, Yongming (Committee member) / Arizona State University (Publisher)
Created2017
171769-Thumbnail Image.png
Description
Electromigration, the net atomic diffusion associated with the momentum transfer from electrons moving through a material, is a major cause of device and component failure in microelectronics. The deleterious effects from electromigration rise with increased current density, a parameter that will only continue to increase as our electronic devices get

Electromigration, the net atomic diffusion associated with the momentum transfer from electrons moving through a material, is a major cause of device and component failure in microelectronics. The deleterious effects from electromigration rise with increased current density, a parameter that will only continue to increase as our electronic devices get smaller and more compact. Understanding the dynamic diffusional pathways and mechanisms of these electromigration-induced and propagated defects can further our attempts at mitigating these failure modes. This dissertation provides insight into the relationships between these defects and parameters of electric field strength, grain boundary misorientation, grain size, void size, eigenstrain, varied atomic mobilities, and microstructure.First, an existing phase-field model was modified to investigate the various defect modes associated with electromigration in an equiaxed non-columnar microstructure. Of specific interest was the effect of grain boundary misalignment with respect to current flow and the mechanisms responsible for the changes in defect kinetics. Grain size, magnitude of externally applied electric field, and the utilization of locally distinct atomic mobilities were other parameters investigated. Networks of randomly distributed grains, a common microstructure of interconnects, were simulated in both 2- and 3-dimensions displaying the effects of 3-D capillarity on diffusional dynamics. Also, a numerical model was developed to study the effect of electromigration on void migration and coalescence. Void migration rates were found to be slowed from compressive forces and the nature of the deformation concurrent with migration was examined through the lens of chemical potential. Void migration was also validated with previously reported theoretical explanations. Void coalescence and void budding were investigated and found to be dependent on the magnitude of interfacial energy and electric field strength. A grasp on the mechanistic pathways of electromigration-induced defect evolution is imperative to the development of reliable electronics, especially as electronic devices continue to miniaturize. This dissertation displays a working understanding of the mechanistic pathways interconnects can fail due to electromigration, as well as provide direction for future research and understanding.
ContributorsFarmer, William McHann (Author) / Ankit, Kumar (Thesis advisor) / Chawla, Nikhilesh (Committee member) / Jiao, Yang (Committee member) / McCue, Ian (Committee member) / Arizona State University (Publisher)
Created2022
157730-Thumbnail Image.png
Description
As the microelectronics industry continues to decrease the size of solder joints, each joint will have to carry a greater current density, making atom diffusion due to current flow, electromigration (EM), a problem of ever-increasing severity. The rate of EM damage depends on current density, operating temperature, and the original

As the microelectronics industry continues to decrease the size of solder joints, each joint will have to carry a greater current density, making atom diffusion due to current flow, electromigration (EM), a problem of ever-increasing severity. The rate of EM damage depends on current density, operating temperature, and the original microstructure of the solder joint, including void volume, grain orientation, and grain size. While numerous studies have investigated the post-mortem effects of EM and have tested a range of current densities and temperatures, none have been able to analyze how the same joint evolves from its initial to final microstructure. This thesis focuses on the study of EM, thermal aging, and thermal cycling in Sn-rich solder joints. Solder joints were either of controlled microstructure and orientation or had trace alloying element additions. Sn grain orientation has been linked to a solder joints’ susceptibility to EM damage, but the precise relationship between orientation and intermetallic (IMC) and void growth has not been deduced. In this research x-ray microtomography was used to nondestructively scan samples and generate 3D reconstructions of both surface and internal features such as interfaces, IMC particles, and voids within a solder joint. Combined with controlled fabrication techniques to create comparable samples and electron backscatter diffraction (EBSD) and energy-dispersive spectroscopy (EDS) analysis for grain orientation and composition analysis, this work shows how grain structure plays a critical role in EM damage and how it differs from damage accrued from thermal effects that occur simultaneously. Unique IMC growth and voiding behaviors are characterized and explained in relation to the solder microstructures that cause their formation and the possible IMC-suppression effects of trace alloying element addition are discussed.
ContributorsBranch Kelly, Marion (Author) / Chawla, Nikhilesh (Thesis advisor) / Ankit, Kumar (Committee member) / Antoniswamy, Aravindha (Committee member) / Arizona State University (Publisher)
Created2019
158157-Thumbnail Image.png
Description
Miniaturization of microdevices comes at the cost of increased circuit complexity and operating current densities. At high current densities, the resulting electron wind imparts a large momentum to metal ions triggering electromigration which leads to degradation of interconnects and solder, ultimately resulting in circuit failure. Although electromigration-induced defects in electronic

Miniaturization of microdevices comes at the cost of increased circuit complexity and operating current densities. At high current densities, the resulting electron wind imparts a large momentum to metal ions triggering electromigration which leads to degradation of interconnects and solder, ultimately resulting in circuit failure. Although electromigration-induced defects in electronic materials can manifest in several forms, the formation of voids is a common occurrence. This research aims at understanding the morphological evolution of voids under electromigration by formulating a diffuse interface approach that accounts for anisotropic mobility in the metallic interconnect. Based on an extensive parametric study, this study reports the conditions under which pancaking of voids or the novel void ‘swimming’ regimes are observed. Finally, inferences are drawn to formulate strategies using which the reliability of interconnects can be improved.
ContributorsVemulapalli, Sree Shivani (Author) / Ankit, Kumar (Thesis advisor) / Chawla, Nikhilesh (Committee member) / Singh, Arunima (Committee member) / Arizona State University (Publisher)
Created2020