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Description
Carrier lifetime is one of the few parameters which can give information about the low defect densities in today's semiconductors. In principle there is no lower limit to the defect density determined by lifetime measurements. No other technique can easily detect defect densities as low as 10-9 - 10-10 cm-3 in a simple, contactless room temperature measurement. However in practice, recombination lifetime τr measurements such as photoconductance decay (PCD) and surface photovoltage (SPV) that are widely used for characterization of bulk wafers face serious limitations when applied to thin epitaxial layers, where the layer thickness is smaller than the minority carrier diffusion length Ln. Other methods such as microwave photoconductance decay (µ-PCD), photoluminescence (PL), and frequency-dependent SPV, where the generated excess carriers are confined to the epitaxial layer width by using short excitation wavelengths, require complicated configuration and extensive surface passivation processes that make them time-consuming and not suitable for process screening purposes. Generation lifetime τg, typically measured with pulsed MOS capacitors (MOS-C) as test structures, has been shown to be an eminently suitable technique for characterization of thin epitaxial layers. It is for these reasons that the IC community, largely concerned with unipolar MOS devices, uses lifetime measurements as a "process cleanliness monitor." However when dealing with ultraclean epitaxial wafers, the classic MOS-C technique measures an effective generation lifetime τg eff which is dominated by the surface generation and hence cannot be used for screening impurity densities. I have developed a modified pulsed MOS technique for measuring generation lifetime in ultraclean thin p/p+ epitaxial layers which can be used to detect metallic impurities with densities as low as 10-10 cm-3. The widely used classic version has been shown to be unable to effectively detect such low impurity densities due to the domination of surface generation; whereas, the modified version can be used suitably as a metallic impurity density monitoring tool for such cases.
ContributorsElhami Khorasani, Arash (Author) / Alford, Terry (Thesis advisor) / Goryll, Michael (Committee member) / Bertoni, Mariana (Committee member) / Arizona State University (Publisher)
Created2013
Description
Photodetectors in the 1.7 to 4.0 μm range are being commercially developed on InP substrates to meet the needs of longer wavelength applications such as thermal and medical sensing. Currently, these devices utilize high indium content metamorphic Ga1-xInxAs (x > 0.53) layers to extend the wavelength range beyond the 1.7 μm achievable using lattice matched GaInAs. The large lattice mismatch required to reach the extended wavelengths results in photodetector materials that contain a large number of misfit dislocations. The low quality of these materials results in a large nonradiative Shockley Read Hall generation/recombination rate that is manifested as an undesirable large thermal noise level in these photodetectors. This work focuses on utilizing the different band structure engineering methods to design more efficient devices on InP substrates. One prospective way to improve photodetector performance at the extended wavelengths is to utilize lattice matched GaInAs/GaAsSb structures that have a type-II band alignment, where the ground state transition energy of the superlattice is smaller than the bandgap of either constituent material. Over the extended wavelength range of 2 to 3 μm this superlattice structure has an optimal period thickness of 3.4 to 5.2 nm and a wavefunction overlap of 0.8 to 0.4, respectively. In using a type-II superlattice to extend the cutoff wavelength there is a tradeoff between the wavelength reached and the electron-hole wavefunction overlap realized, and hence absorption coefficient achieved. This tradeoff and the subsequent reduction in performance can be overcome by two methods: adding bismuth to this type-II material system; applying strain on both layers in the system to attain strain-balanced condition. These allow the valance band alignment and hence the wavefunction overlap to be tuned independently of the wavelength cutoff. Adding 3% bismuth to the GaInAs constituent material, the resulting lattice matched Ga0.516In0.484As0.970Bi0.030/GaAs0.511Sb0.489superlattice realizes a 50% larger absorption coefficient. While as, similar results can be achieved with strain-balanced condition with strain limited to 1.9% on either layer. The optimal design rules derived from the different possibilities make it feasible to extract superlattice period thickness with the best absorption coefficient for any cutoff wavelength in the range.
ContributorsSharma, Ankur R (Author) / Johnson, Shane (Thesis advisor) / Goryll, Michael (Committee member) / Roedel, Ronald (Committee member) / Arizona State University (Publisher)
Created2013
Description
This research emphasizes the use of low energy and low temperature post processing to improve the performance and lifetime of thin films and thin film transistors, by applying the fundamentals of interaction of materials with conductive heating and electromagnetic radiation. Single frequency microwave anneal is used to rapidly recrystallize the damage induced during ion implantation in Si substrates. Volumetric heating of the sample in the presence of the microwave field facilitates quick absorption of radiation to promote recrystallization at the amorphous-crystalline interface, apart from electrical activation of the dopants due to relocation to the substitutional sites. Structural and electrical characterization confirm recrystallization of heavily implanted Si within 40 seconds anneal time with minimum dopant diffusion compared to rapid thermal annealed samples. The use of microwave anneal to improve performance of multilayer thin film devices, e.g. thin film transistors (TFTs) requires extensive study of interaction of individual layers with electromagnetic radiation. This issue has been addressed by developing detail understanding of thin films and interfaces in TFTs by studying reliability and failure mechanisms upon extensive stress test. Electrical and ambient stresses such as illumination, thermal, and mechanical stresses are inflicted on the mixed oxide based thin film transistors, which are explored due to high mobilities of the mixed oxide (indium zinc oxide, indium gallium zinc oxide) channel layer material. Semiconductor parameter analyzer is employed to extract transfer characteristics, useful to derive mobility, subthreshold, and threshold voltage parameters of the transistors. Low temperature post processing anneals compatible with polymer substrates are performed in several ambients (oxygen, forming gas and vacuum) at 150 °C as a preliminary step. The analysis of the results pre and post low temperature anneals using device physics fundamentals assists in categorizing defects leading to failure/degradation as: oxygen vacancies, thermally activated defects within the bandgap, channel-dielectric interface defects, and acceptor-like or donor-like trap states. Microwave anneal has been confirmed to enhance the quality of thin films, however future work entails extending the use of electromagnetic radiation in controlled ambient to facilitate quick post fabrication anneal to improve the functionality and lifetime of these low temperature fabricated TFTs.
ContributorsVemuri, Rajitha (Author) / Alford, Terry L. (Thesis advisor) / Theodore, N David (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
Highly reflective back surfaces are critical for reaching the detailed balance efficiency limits of photovoltaics. In addition to being highly reflective, the back surface and contact of the cell must have low resistance. A traditional approach to balance reflectance and contact resistance has been to use point contact geometries, which are process intensive. This work considers using a transparent conductive oxide and metal mirror, which, due to being two planar layers, can be fabricated much more easily. To study the tradeoff between resistance and absorptance for this contact, the oxide doping concentration is varied. Test structures to measure the doping concentration, contact resistance, and parasitic absorptance were fabricated. Using measured parameters, the performance of high-quality GaAs photonic power converters is modeled. Measurements show that although the contact resistance is comparatively high, it can be controlled through doping in the oxide and semiconductor composition. Furthermore, modeling shows the contact resistance is not prohibitively high for one-sun or lower illumination level devices. The hemispheric reflectance of the experimental oxide/metal back contact is modeled to be 96.7%, which is quite high considering that it is a conductive back contact. Although the oxide/metal contact structure does not perform electrically or optically as well as more complex point contact structures, this work indicates the advantages of the planar transparent conductive oxide/metal contact structure near one-sun equivalent current densities for solar cells and photonic power converters, where it is desirable to avoid the device fabrication costs of back contact patterning.
ContributorsGregory, Christopher Thomas (Author) / King, Richard R (Thesis advisor) / Goryll, Michael (Committee member) / Rolston, Nicholas (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2024
Description
The silicon-based solar cell has been extensively deployed in photovoltaic industry and plays an important role in renewable energy industries. A more energy-efficient, environment-harmless and eco-friendly silicon production technique is required for price-competitive solar energy harvesting. Silicon electrorefining in molten salt is promising for the ultrapure solar-grade Si production. To avoid using highly corrosive fluoride salt, CaCl2-based salt is widely employed for silicon electroreduction. For Si electroreduction in CaCl2-based salt, CaO is usually added to enhance the solubility of SiO2. However, the existence of oxygen in molten salt could result in system corrosion, anode passivation and the co-deposition of secondary phases such as CaSiO3 and SiO2 at the cathode. This research focuses on the development of reusable oxygen-free CaCl2-based molten salt for solar-grade silicon electrorefining. A new multi-potential electropurification process has been proposed and proven to be more effective in impurities removal. The as-received salt and the salt after electrorefining have been electropurified. The inductively-coupled plasma mass spectrometry and cyclic voltammetry have been utilized to determine the impurities removal of electropurification. The salt after silicon electrorefining has been regenerated to its original purity level before by the multi-potential electropurification process, demonstrating the feasibility of a reusable salt by electropurification. In an oxygen-free CaCl2-based salt without silicon precursor, the silicon dissolved from the silicon anode can be successfully deposited at the cathode. The silicon anode has been operated for more than 50 hours without passivation in the oxygen-free system. Silicon ions start to be deposited after 0.17 g of silicon has been dissolved into the salt from the silicon anode. A 180 µm deposit with a silver-luster surface was obtained at the cathode. The main impurities in the silicon anode such as aluminum, iron and titanium were not found in the silicon deposits. No oxygen-containing secondary phases are detected in the silicon deposits. These results confirm the feasibility of silicon electrorefining in the oxygen-free CaCl2-based salt.
ContributorsTseng, Mao-Feng (Author) / Tao, Meng (Thesis advisor) / Kannan, Arunachala Mada (Committee member) / Mu, Linqin (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2023
Description
In this project, current-voltage (I-V) and Deep Level Transient Spectroscopy (DLTS) measurements are used to (a) characterize the electrical properties of Nb/p-type Si Schottky barriers, (b) identify the concentration and physical character of the electrically active defects present in the depletion region, and (c) use thermal processing to reduce the concentration or eliminate the defects. Barrier height determinations using temperature-dependent I-V measurements indicate that the barrier height decreases from 0.50 eV to 0.48 eV for anneals above 200 C. The electrically-active defect concentration measured using DLTS (deep level transient spectroscopy) drops markedly after anneals at 250 C.
A significant increase in leakage currents is almost always observed in near-ideal devices upon annealing. In contrast, non-ideal devices dominated by leakage currents annealed at 150 C to 250 C exhibit a significant decrease in such currents.
A significant increase in leakage currents is almost always observed in near-ideal devices upon annealing. In contrast, non-ideal devices dominated by leakage currents annealed at 150 C to 250 C exhibit a significant decrease in such currents.
ContributorsKrishna Murthy, Madhu (Author) / Newman, Nathan (Thesis advisor) / Goryll, Michael (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2018
Description
This work describes efforts made toward the development of a compact, quantitative fluorescence-based multiplexed detection platform for point-of-care diagnostics. This includes the development of a microfluidic delivery and actuation system for multistep detection assays. Early detection of infectious diseases requires high sensitivity dependent on the precise actuation of fluids.
Methods of fluid actuation were explored to allow delayed delivery of fluidic reagents in multistep detection lateral flow assays (LFAs). Certain hydrophobic materials such as wax were successfully implemented in the LFA with the use of precision dispensed valves. Sublimating materials such as naphthalene were also characterized along with the implementation of a heating system for precision printing of the valves.
Various techniques of blood fractionation were also investigated and this work demonstrates successful blood fractionation in an LFA. The fluid flow of reagents was also characterized and validated with the use of mathematical models and multiphysics modeling software. Lastly intuitive, user-friendly mobile and desktop applications were developed to interface the underlying Arduino software. The work advances the development of a system which successfully integrates all components of fluid separation and delivery along with highly sensitive detection and a user-friendly interface; the system will ultimately provide clinically significant diagnostics in a of point-of-care device.
Methods of fluid actuation were explored to allow delayed delivery of fluidic reagents in multistep detection lateral flow assays (LFAs). Certain hydrophobic materials such as wax were successfully implemented in the LFA with the use of precision dispensed valves. Sublimating materials such as naphthalene were also characterized along with the implementation of a heating system for precision printing of the valves.
Various techniques of blood fractionation were also investigated and this work demonstrates successful blood fractionation in an LFA. The fluid flow of reagents was also characterized and validated with the use of mathematical models and multiphysics modeling software. Lastly intuitive, user-friendly mobile and desktop applications were developed to interface the underlying Arduino software. The work advances the development of a system which successfully integrates all components of fluid separation and delivery along with highly sensitive detection and a user-friendly interface; the system will ultimately provide clinically significant diagnostics in a of point-of-care device.
ContributorsArafa, Hany M (Author) / Blain Christen, Jennifer M (Thesis advisor) / Goryll, Michael (Committee member) / Smith, Barbara (Committee member) / Arizona State University (Publisher)
Created2018
Description
Photovoltaics (PV) is one of the promising options for maintaining sustainable energy supply because it is environmentally friendly, a non-polluting and low-maintenance energy source. Despite the many advantages of PV, solar energy currently accounts for only 1% of the global energy portfolio for electricity generation. This is because the cost of electricity from PV remains about a factor of two higher than the fossil fuel (10¢/kWh). Widely-used commercial methods employed to generate PV energy, such as silicon or thin film-based technologies, are still expensive as they are processed through vacuum-based techniques. Therefore, it is desirable to find an alternative method that is open-air and continuous process for the mass production of solar cells.
The objective of the research in this thesis is to develop low-cost spray pyrolysis technique to synthesize oxides thin films for applications in solar cells. Chapter 4 and 5 discuss spray-deposited dielectric oxides for their applications in Si solar cells. In Chapter 4, a successful deposition of Al2O3 is demonstrated using water as the solvent which ensures a lower cost and safer process environment. Optical, electrical, and structural properties of spray-deposited Al2O3 are investigated and compared to the industrial standard Atomic Layer Deposition (ALD) Al2O3/Plasma Enhanced Chemical Vapor Deposition (PECVD) SiNx stack, to reveal the suitability of spray-deposited Al2O3 for rear passivation and optical trapping in p-type Si Passivated Emitter and Rear Cell (PERC) solar cells. In Chapter 5, The possibility of using low-cost spray-deposited ZrO2 as the antireflection coating for Si solar cells is investigated. Optical, electrical and structural properties of spray-deposited ZrO2 films are studied and compared to the industrial standard antireflection coating PECVD SiNx. In Chapter 6, spray-deposited hematite Fe2O3 and sol-gel prepared anatase TiO2 thin films are sulfurized by annealing in H2S to investigate the band gap narrowing by sulfur doping and explore the possibility of using ternary semiconductors for their application as solar absorbers.
The objective of the research in this thesis is to develop low-cost spray pyrolysis technique to synthesize oxides thin films for applications in solar cells. Chapter 4 and 5 discuss spray-deposited dielectric oxides for their applications in Si solar cells. In Chapter 4, a successful deposition of Al2O3 is demonstrated using water as the solvent which ensures a lower cost and safer process environment. Optical, electrical, and structural properties of spray-deposited Al2O3 are investigated and compared to the industrial standard Atomic Layer Deposition (ALD) Al2O3/Plasma Enhanced Chemical Vapor Deposition (PECVD) SiNx stack, to reveal the suitability of spray-deposited Al2O3 for rear passivation and optical trapping in p-type Si Passivated Emitter and Rear Cell (PERC) solar cells. In Chapter 5, The possibility of using low-cost spray-deposited ZrO2 as the antireflection coating for Si solar cells is investigated. Optical, electrical and structural properties of spray-deposited ZrO2 films are studied and compared to the industrial standard antireflection coating PECVD SiNx. In Chapter 6, spray-deposited hematite Fe2O3 and sol-gel prepared anatase TiO2 thin films are sulfurized by annealing in H2S to investigate the band gap narrowing by sulfur doping and explore the possibility of using ternary semiconductors for their application as solar absorbers.
ContributorsShin, Woo Jung (Author) / Tao, Meng (Thesis advisor) / Goryll, Michael (Committee member) / Wang, Qing Hua (Committee member) / Arizona State University (Publisher)
Created2019
Description
InAsBi is a narrow direct gap III-V semiconductor that has recently attracted considerable attention because its bandgap is tunable over a wide range of mid- and long-wave infrared wavelengths for optoelectronic applications. Furthermore, InAsBi can be integrated with other III-V materials and is potentially an alternative to commercial II-VI photodetector materials such as HgCdTe.
Several 1 μm thick, nearly lattice-matched InAsBi layers grown on GaSb are examined using Rutherford backscattering spectrometry and X-ray diffraction. Random Rutherford backscattering measurements indicate that the average Bi mole fraction ranges from 0.0503 to 0.0645 for the sample set, and ion channeling measurements indicate that the Bi atoms are substitutional. The X-ray diffraction measurements show a diffraction sideband near the main (004) diffraction peak, indicating that the Bi mole fraction is not laterally uniform in the layer. The average out of plane tetragonal distortion is determined by modeling the main and sideband diffraction peaks, from which the average unstrained lattice constant of each sample is determined. By comparing the Bi mole fraction measured by random Rutherford backscattering with the InAsBi lattice constant for the sample set, the lattice constant of zinc blende InBi is determined to be 6.6107 Å.
Several InAsBi quantum wells tensilely strained to the GaSb lattice constant with dilute quantities of Bi are characterized using photoluminescence spectroscopy. Investigation of the integrated intensity as a function of carrier excitation density spanning 5×1025 to 5×1026 cm-3 s-1 indicates radiative dominated recombination and high quantum efficiency over the 12 to 250 K temperature range. The bandgap of InAsBi is ascertained from the photoluminescence spectra and parameterized as a function of temperature using the Einstein single oscillator model. The dilute Bi mole fraction of the InAsBi quantum wells is determined by comparing the measured bandgap energy to that predicted by the valence band anticrossing model. The Bi mole fraction determined by photoluminescence agrees reasonably well with that estimated using secondary ion mass spectrometry.
Several 1 μm thick, nearly lattice-matched InAsBi layers grown on GaSb are examined using Rutherford backscattering spectrometry and X-ray diffraction. Random Rutherford backscattering measurements indicate that the average Bi mole fraction ranges from 0.0503 to 0.0645 for the sample set, and ion channeling measurements indicate that the Bi atoms are substitutional. The X-ray diffraction measurements show a diffraction sideband near the main (004) diffraction peak, indicating that the Bi mole fraction is not laterally uniform in the layer. The average out of plane tetragonal distortion is determined by modeling the main and sideband diffraction peaks, from which the average unstrained lattice constant of each sample is determined. By comparing the Bi mole fraction measured by random Rutherford backscattering with the InAsBi lattice constant for the sample set, the lattice constant of zinc blende InBi is determined to be 6.6107 Å.
Several InAsBi quantum wells tensilely strained to the GaSb lattice constant with dilute quantities of Bi are characterized using photoluminescence spectroscopy. Investigation of the integrated intensity as a function of carrier excitation density spanning 5×1025 to 5×1026 cm-3 s-1 indicates radiative dominated recombination and high quantum efficiency over the 12 to 250 K temperature range. The bandgap of InAsBi is ascertained from the photoluminescence spectra and parameterized as a function of temperature using the Einstein single oscillator model. The dilute Bi mole fraction of the InAsBi quantum wells is determined by comparing the measured bandgap energy to that predicted by the valence band anticrossing model. The Bi mole fraction determined by photoluminescence agrees reasonably well with that estimated using secondary ion mass spectrometry.
ContributorsShalindar Christraj, Arvind Joshua Jaydev (Author) / Johnson, Shane R (Thesis advisor) / Alford, Terry L. (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2016
Description
This work demonstrates novel nBn photodetectors including mid-wave infrared (MWIR) nBn photodetectors based on InAs/InAsSb type-II superlattices (T2SLs) with charge as the output signal, and visible nBn photodetectors based on CdTe with current output. Furthermore, visible/MWIR two-color photodetectors (2CPDs) are fabricated through monolithic integration of the CdTe nBn photodetector and an InSb photodiode.
The MWIR nBn photodetectors have a potential well for holes present in the barrier layer. At low voltages of < −0.2 V, which ensure low dark current <10-5 A/cm2 at 77 K, photogenerated holes are collected in this well with a storage lifetime of 40 s. This charge collection process is an in-device signal integration process that reduces the random noise significantly. Since the stored holes can be readout laterally as in charge-coupled devices, it is therefore possible to make charge-output nBn with much lower noise than conventional current-output nBn photodetectors.
The visible nBn photodetectors have a CdTe absorber layer and a ZnTe barrier layer with an aligned valence band edge. By using a novel ITO/undoped-CdTe top contact design, it has achieved a high specific detectivity of 3×1013 cm-Hz1/2/W at room temperature. Particularly, this CdTe nBn photodetector grown on InSb substrates enables the monolithic integration of CdTe and InSb photodetectors, and provides a platform to study in-depth device physics of nBn photodetectors at room temperature.
Furthermore, the visible/MWIR 2CPD has been developed by the monolithic integration of the CdTe nBn and an InSb photodiode through an n-CdTe/p-InSb tunnel junction. At 77 K, the photoresponse of the 2CPD can be switched between a 1-5.5 μm MWIR band and a 350-780 nm visible band by illuminating the device with an external light source or not, and applying with proper voltages. Under optimum conditions, the 2CPD has achieved a MWIR peak responsivity of 0.75 A/W with a band rejection ratio (BRR) of 52 dB, and a visible peak responsivity of 0.3 A/W with a BRR of 18 dB. This 2CPD has enabled future compact image sensors with high fill-factor and responsivity switchable between visible and MWIR colors.
The MWIR nBn photodetectors have a potential well for holes present in the barrier layer. At low voltages of < −0.2 V, which ensure low dark current <10-5 A/cm2 at 77 K, photogenerated holes are collected in this well with a storage lifetime of 40 s. This charge collection process is an in-device signal integration process that reduces the random noise significantly. Since the stored holes can be readout laterally as in charge-coupled devices, it is therefore possible to make charge-output nBn with much lower noise than conventional current-output nBn photodetectors.
The visible nBn photodetectors have a CdTe absorber layer and a ZnTe barrier layer with an aligned valence band edge. By using a novel ITO/undoped-CdTe top contact design, it has achieved a high specific detectivity of 3×1013 cm-Hz1/2/W at room temperature. Particularly, this CdTe nBn photodetector grown on InSb substrates enables the monolithic integration of CdTe and InSb photodetectors, and provides a platform to study in-depth device physics of nBn photodetectors at room temperature.
Furthermore, the visible/MWIR 2CPD has been developed by the monolithic integration of the CdTe nBn and an InSb photodiode through an n-CdTe/p-InSb tunnel junction. At 77 K, the photoresponse of the 2CPD can be switched between a 1-5.5 μm MWIR band and a 350-780 nm visible band by illuminating the device with an external light source or not, and applying with proper voltages. Under optimum conditions, the 2CPD has achieved a MWIR peak responsivity of 0.75 A/W with a band rejection ratio (BRR) of 52 dB, and a visible peak responsivity of 0.3 A/W with a BRR of 18 dB. This 2CPD has enabled future compact image sensors with high fill-factor and responsivity switchable between visible and MWIR colors.
ContributorsHe, Zhaoyu (Author) / Zhang, Yong-Hang (Thesis advisor) / Vasileska, Dragica (Committee member) / Goryll, Michael (Committee member) / Johnson, Shane (Committee member) / Arizona State University (Publisher)
Created2016