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- All Subjects: Protons
Description
The nucleon resonance spectrum consists of many overlapping excitations. Polarization observables are an important tool for understanding and clarifying these spectra. While there is a large data base of differential cross sections for the process, very few data exist for polarization observables. A program of double polarization experiments has been conducted at Jefferson Lab using a tagged polarized photon beam and a frozen spin polarized target (FROST). The results presented here were taken during the first running period of FROST using the CLAS detector at Jefferson Lab with photon energies ranging from 329 MeV to 2.35 GeV. Data are presented for the E polarization observable for eta meson photoproduction on the proton from threshold (W=1500 MeV) to W=1900 MeV. Comparisons to the partial wave analyses of SAID and Bonn-Gatchina along with the isobar analysis of eta-MAID are made. These results will help distinguish between current theoretical predictions and refine future theories.
ContributorsMorrison, Brian (Author) / Ritchie, Barry (Thesis advisor) / Dugger, Michael (Committee member) / Shovkovy, Igor (Committee member) / Davies, Paul (Committee member) / Alarcon, Ricardo (Committee member) / Arizona State University (Publisher)
Created2011
Description
As the world energy demand increases, semiconductor devices with high energy conversion efficiency become more and more desirable. The energy conversion consists of two distinct processes, namely energy generation and usage. In this dissertation, novel multi-junction solar cells and light emitting diodes (LEDs) are proposed and studied for high energy conversion efficiency in both processes, respectively. The first half of this dissertation discusses the practically achievable energy conversion efficiency limit of solar cells. Since the demonstration of the Si solar cell in 1954, the performance of solar cells has been improved tremendously and recently reached 41.6% energy conversion efficiency. However, it seems rather challenging to further increase the solar cell efficiency. The state-of-the-art triple junction solar cells are analyzed to help understand the limiting factors. To address these issues, the monolithically integrated II-VI and III-V material system is proposed for solar cell applications. This material system covers the entire solar spectrum with a continuous selection of energy bandgaps and can be grown lattice matched on a GaSb substrate. Moreover, six four-junction solar cells are designed for AM0 and AM1.5D solar spectra based on this material system, and new design rules are proposed. The achievable conversion efficiencies for these designs are calculated using the commercial software package Silvaco with real material parameters. The second half of this dissertation studies the semiconductor luminescence refrigeration, which corresponds to over 100% energy usage efficiency. Although cooling has been realized in rare-earth doped glass by laser pumping, semiconductor based cooling is yet to be realized. In this work, a device structure that monolithically integrates a GaAs hemisphere with an InGaAs/GaAs quantum-well thin slab LED is proposed to realize cooling in semiconductor. The device electrical and optical performance is calculated. The proposed device then is fabricated using nine times photolithography and eight masks. The critical process steps, such as photoresist reflow and dry etch, are simulated to insure successful processing. Optical testing is done with the devices at various laser injection levels and the internal quantum efficiency, external quantum efficiency and extraction efficiency are measured.
ContributorsWu, Songnan (Author) / Zhang, Yong-Hang (Thesis advisor) / Menéndez, Jose (Committee member) / Ponce, Fernando (Committee member) / Belitsky, Andrei (Committee member) / Schroder, Dieter (Committee member) / Arizona State University (Publisher)
Created2010
Description
Cubic boron nitride (c-BN), hexagonal boron nitride (h-BN), and semiconducting diamond all have physical properties that make them ideal materials for applications in high power and high frequency electronics, as well as radiation detectors. However, there is limited research on the unique properties and growth of c-BN or h-BN thin films. This dissertation addresses the deposition of c-BN via plasma enhanced chemical vapor deposition (PECVD) on boron doped diamond substrates. In-Situ X-ray photoelectron spectroscopy (XPS) is used to characterize the thickness and hexagonal to cubic ratio of boron nitride thin films. The effects of hydrogen concentration during the deposition of boron nitride are investigated. The boron nitride deposition rate is found to be dependent on the hydrogen gas flow. The sp2 to sp3 bonding is also found to be dependent on the hydrogen gas flow. Preferential growth of h-BN is observed when an excess of hydrogen is supplied to the reaction, while h-BN growth is suppressed when hydrogen flow is reduced to be the limiting reactant. Reduced hydrogen flow is also observed to promote preferential growth of c-BN.
The hydrogen limited reaction is used to deposit c-BN on single crystal (100) boron-doped diamond substrates. In-situ ultra-violet photoelectron spectroscopy (UPS) and XPS are used to deduce the valence band offset of the diamond/c-BN interface. A valence band offset of -0.3 eV is measured with the diamond VBM above the VBM of c-BN. This value is then discussed in context of previous experimental results and theoretical calculations.
Finally, UPS and XPS are used to characterize the surface states of phosphorus-doped diamond. Variations within the processing parameters for surface preparation and the effects on the electronic surface states are presented and discussed.
ContributorsBrown, Jesse (Author) / Nemanich, Robert J (Thesis advisor) / Alarcon, Ricardo (Committee member) / Lindsay, Stuart (Committee member) / Zaniewski, Anna (Committee member) / Arizona State University (Publisher)
Created2021
Description
A series of experiments using a polarized beam incident on a polarized frozen spin target
(FROST) was conducted at Jefferson Lab in 2010. Results presented here were taken
during the second running period with the FROST target using the CEBAF Large Acceptance
Spectrometer (CLAS) detector at Jefferson Lab, which used transversely-polarized
protons in a butanol target and a circularly-polarized incident tagged photon beam with
energies between 0.62 and 2.93 GeV. Data are presented for the F and T polarization observables
for h meson photoproduction on the proton from W = 1.55 GeV to 1.80 GeV.
The data presented here will improve the world database and refine theoretical approaches
of nucleon structure.
(FROST) was conducted at Jefferson Lab in 2010. Results presented here were taken
during the second running period with the FROST target using the CEBAF Large Acceptance
Spectrometer (CLAS) detector at Jefferson Lab, which used transversely-polarized
protons in a butanol target and a circularly-polarized incident tagged photon beam with
energies between 0.62 and 2.93 GeV. Data are presented for the F and T polarization observables
for h meson photoproduction on the proton from W = 1.55 GeV to 1.80 GeV.
The data presented here will improve the world database and refine theoretical approaches
of nucleon structure.
ContributorsTucker, Ross (Author) / Ritchie, Barry (Thesis advisor) / Dugger, Michael (Committee member) / Alarcon, Ricardo (Committee member) / Lebed, Richard (Committee member) / Arizona State University (Publisher)
Created2016