Matching Items (18)
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- All Subjects: Materials Science
- Genre: Masters Thesis
- Creators: Jiao, Yang
- Creators: Kozicki, Michael
- Status: Published
Description
Microwave (MW), thermal, and ultraviolet (UV) annealing were used to explore the response of Ag structures on a Ge-Se chalcogenide glass (ChG) thin film as flexible radiation sensors, and Te-Ti chalcogenide thin films as a material for diffusion barriers in microelectronics devices and processing of metallized Cu. Flexible resistive radiation sensors consisting of Ag electrodes on a Ge20Se80 ChG thin film and polyethylene naphthalate substrate were exposed to UV radiation. The sensors were mounted on PVC tubes of varying radii to induce bending strains and annealed under ambient conditions up to 150 oC. Initial sensor resistance was measured to be ~1012 Ω; after exposure to UV radiation, the resistance was ~104 Ω. Bending strain and low temperature annealing had no significant effect on the resistance of the sensors. Samples of Cu on Te-Ti thin films were annealed in vacuum for up to 30 minutes and were stable up to 500 oC as revealed using Rutherford backscattering spectrometry (RBS) and four-point-probe analysis. X-ray diffractometry (XRD) indicates Cu grain growth up to 500 oC and phase instability of the Te-Ti barrier at 600 oC. MW processing was performed in a 2.45-GHz microwave cavity on Cu/Te-Ti films for up to 30 seconds to induce oxide growth. Using a calibrated pyrometer above the sample, the temperature of the MW process was measured to be below a maximum of 186 oC. Four-point-probe analysis shows an increase in resistance with an increase in MW time. XRD indicates growth of CuO on the sample surface. RBS suggests oxidation throughout the Te-Ti film. Additional samples were exposed to 907 J/cm2 UV radiation in order to ensure other possible electromagnetically induced mechanisms were not active. There were no changes observed using XRD, RBS or four point probing.
ContributorsRoos, Benjamin, 1990- (Author) / Alford, Terry L. (Thesis advisor) / Theodore, David (Committee member) / Kozicki, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
Nonvolatile memory (NVM) technologies have been an integral part of electronic systems for the past 30 years. The ideal non-volatile memory have minimal physical size, energy usage, and cost while having maximal speed, capacity, retention time, and radiation hardness. A promising candidate for next-generation memory is ion-conducting bridging RAM which is referred to as programmable metallization cell (PMC), conductive bridge RAM (CBRAM), or electrochemical metallization memory (ECM), which is likely to surpass flash memory in all the ideal memory characteristics. A comprehensive physics-based model is needed to completely understand PMC operation and assist in design optimization.
To advance the PMC modeling effort, this thesis presents a precise physical model parameterizing materials associated with both ion-rich and ion-poor layers of the PMC's solid electrolyte, so that captures the static electrical behavior of the PMC in both its low-resistance on-state (LRS) and high resistance off-state (HRS). The experimental data is measured from a chalcogenide glass PMC designed and manufactured at ASU. The static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge30Se70 ChG film is characterized and modeled using three dimensional simulation code written in Silvaco Atlas finite element analysis software. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfunctions, density of states, carrier mobilities, dielectric constants, and affinities.
The sensitivity of our modeled PMC to the variation of its prominent achieved material parameters is examined on the HRS and LRS impedance behavior.
The obtained accurate set of material parameters for both Ag-rich and Ag-poor ChG systems and process variation verification on electrical characteristics enables greater fidelity in PMC device simulation, which significantly enhances our ability to understand the underlying physics of ChG-based resistive switching memory.
To advance the PMC modeling effort, this thesis presents a precise physical model parameterizing materials associated with both ion-rich and ion-poor layers of the PMC's solid electrolyte, so that captures the static electrical behavior of the PMC in both its low-resistance on-state (LRS) and high resistance off-state (HRS). The experimental data is measured from a chalcogenide glass PMC designed and manufactured at ASU. The static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge30Se70 ChG film is characterized and modeled using three dimensional simulation code written in Silvaco Atlas finite element analysis software. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfunctions, density of states, carrier mobilities, dielectric constants, and affinities.
The sensitivity of our modeled PMC to the variation of its prominent achieved material parameters is examined on the HRS and LRS impedance behavior.
The obtained accurate set of material parameters for both Ag-rich and Ag-poor ChG systems and process variation verification on electrical characteristics enables greater fidelity in PMC device simulation, which significantly enhances our ability to understand the underlying physics of ChG-based resistive switching memory.
ContributorsRajabi, Saba (Author) / Barnaby, Hugh (Thesis advisor) / Kozicki, Michael (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2014
Description
Metal Organic Frameworks(MOFs) have been used in various applications, including
sensors. The unique crystalline structure of MOFs in addition to controllability of
their pore size and their intake selectivity makes them a promising method of detection.
Detection of metal ions in water using a binary mixture of luminescent MOFs
has been reported. 3 MOFs(ZrPDA, UiO-66 and UiO-66-NH2) as detectors and 4
metal ions(Pb2+, Ni2+, Ba2+ and Cu2+) as the target species were chosen based on
cost, water stability, application and end goals.
It is possible to detect metal ions such as Pb2+ at concentrations at low as 0.005
molar using MOFs. Also, based on the luminescence responses, a method of distinguishing
between similar metal ions has been proposed. It is shown that using a
mixture of MOFs with dierent reaction to metal ions can lead to unique and specic
3D luminescence maps, which can be used to identify the present metal ions in water
and their amount.
In addition to the response of a single MOF to addition of a single metal ion,
luminescence response of ZrPDA + UiO-66 mixture to increasing concentration of
each of 4 metal ions was studied, and summarized. A new peak is observed in the
mixture, that did not exist before, and it is proposed that this peak requires metal
ions to activate
sensors. The unique crystalline structure of MOFs in addition to controllability of
their pore size and their intake selectivity makes them a promising method of detection.
Detection of metal ions in water using a binary mixture of luminescent MOFs
has been reported. 3 MOFs(ZrPDA, UiO-66 and UiO-66-NH2) as detectors and 4
metal ions(Pb2+, Ni2+, Ba2+ and Cu2+) as the target species were chosen based on
cost, water stability, application and end goals.
It is possible to detect metal ions such as Pb2+ at concentrations at low as 0.005
molar using MOFs. Also, based on the luminescence responses, a method of distinguishing
between similar metal ions has been proposed. It is shown that using a
mixture of MOFs with dierent reaction to metal ions can lead to unique and specic
3D luminescence maps, which can be used to identify the present metal ions in water
and their amount.
In addition to the response of a single MOF to addition of a single metal ion,
luminescence response of ZrPDA + UiO-66 mixture to increasing concentration of
each of 4 metal ions was studied, and summarized. A new peak is observed in the
mixture, that did not exist before, and it is proposed that this peak requires metal
ions to activate
ContributorsSirous, Peyman (Author) / Mu, Bin (Thesis advisor) / Alford, Terry (Thesis advisor) / Jiao, Yang (Committee member) / Arizona State University (Publisher)
Created2018
Description
Fatigue is a degradation process of materials that would lead to failure when materials are subjected to cyclic loadings. During past centuries, various of approaches have been proposed and utilized to help researchers understand the underlying theories of fatigue behavior of materials, as well as design engineering structures so that catastrophic disasters that arise from fatigue failure could be avoided. The stress-life approach is the most classical way that academia applies to analyze fatigue data, which correlates the fatigue lifetime with stress amplitudes during cyclic loadings. Fracture mechanics approach is another well-established way, by which people regard the cyclic stress intensity factor as the driving force during fatigue crack nucleation and propagation, and numerous models (such as the well-known Paris’ law) are developed by researchers.
The significant drawback of currently widely-used fatigue analysis approaches, nevertheless, is that they are all cycle-based, limiting researchers from digging into sub-cycle regime and acquiring real-time fatigue behavior data. The missing of such data further impedes academia from validating hypotheses that are related to real-time observations of fatigue crack nucleation and growth, thus the existence of various phenomena, such as crack closure, remains controversial.
In this thesis, both classical stress-life approach and fracture-mechanics-based approach are utilized to study the fatigue behavior of alloys. Distinctive material characterization instruments are harnessed to help collect and interpret key data during fatigue crack growth. Specifically, an investigation on the sub-cycle fatigue crack growth behavior is enabled by in-situ SEM mechanical testing, and a non-uniform growth mechanism within one loading cycle is confirmed by direct observation as well as image interpretation. Predictions based on proposed experimental procedure and observations show good match with cycle-based data from references, which indicates the credibility of proposed methodology and model, as well as their capability of being applied to a wide range of materials.
The significant drawback of currently widely-used fatigue analysis approaches, nevertheless, is that they are all cycle-based, limiting researchers from digging into sub-cycle regime and acquiring real-time fatigue behavior data. The missing of such data further impedes academia from validating hypotheses that are related to real-time observations of fatigue crack nucleation and growth, thus the existence of various phenomena, such as crack closure, remains controversial.
In this thesis, both classical stress-life approach and fracture-mechanics-based approach are utilized to study the fatigue behavior of alloys. Distinctive material characterization instruments are harnessed to help collect and interpret key data during fatigue crack growth. Specifically, an investigation on the sub-cycle fatigue crack growth behavior is enabled by in-situ SEM mechanical testing, and a non-uniform growth mechanism within one loading cycle is confirmed by direct observation as well as image interpretation. Predictions based on proposed experimental procedure and observations show good match with cycle-based data from references, which indicates the credibility of proposed methodology and model, as well as their capability of being applied to a wide range of materials.
ContributorsLiu, Siying (Author) / Liu, Yongming (Thesis advisor) / Jiao, Yang (Committee member) / Nian, Qiong (Committee member) / Arizona State University (Publisher)
Created2018
Description
Non-volatile memory (NVM) has become a staple in the everyday life of consumers. NVM manifests inside cell phones, laptops, and most recently, wearable tech such as smart watches. NAND Flash has been an excellent solution to conditions requiring fast, compact NVM. Current technology nodes are nearing the physical limits of scaling, preventing flash from improving. To combat the limitations of flash and to appease consumer demand for progressively faster and denser NVM, new technologies are needed. One possible candidate for the replacement of NAND Flash is programmable metallization cells (PMC). PMC are a type of resistive memory, meaning that they do not rely on charge storage to maintain a logic state. Depending on their application, it is possible that devices containing NVM will be exposed to harsh radiation environments. As part of the process for developing a novel memory technology, it is important to characterize the effects irradiation has on the functionality of the devices.
This thesis characterizes the effects that ionizing γ-ray irradiation has on the retention of the programmed resistive state of a PMC. The PMC devices tested used Ge30Se70 doped with Ag as the solid electrolyte layer and were fabricated by the thesis author in a Class 100 clean room. Individual device tiles were wire bonded into ceramic packages and tested in a biased and floating contact scenario.
The first scenario presented shows that PMC devices are capable of retaining their programmed state up to the maximum exposed total ionizing dose (TID) of 3.1 Mrad(Si). In this first scenario, the contacts of the PMC devices were left floating during exposure. The second scenario tested shows that the PMC devices are capable of retaining their state until the maximum TID of 10.1 Mrad(Si) was reached. The contacts in the second scenario were biased, with a 50 mV read voltage applied to the anode contact. Analysis of the results show that Ge30Se70 PMC are ionizing radiation tolerant and can retain a programmed state to a higher TID than NAND Flash memory.
This thesis characterizes the effects that ionizing γ-ray irradiation has on the retention of the programmed resistive state of a PMC. The PMC devices tested used Ge30Se70 doped with Ag as the solid electrolyte layer and were fabricated by the thesis author in a Class 100 clean room. Individual device tiles were wire bonded into ceramic packages and tested in a biased and floating contact scenario.
The first scenario presented shows that PMC devices are capable of retaining their programmed state up to the maximum exposed total ionizing dose (TID) of 3.1 Mrad(Si). In this first scenario, the contacts of the PMC devices were left floating during exposure. The second scenario tested shows that the PMC devices are capable of retaining their state until the maximum TID of 10.1 Mrad(Si) was reached. The contacts in the second scenario were biased, with a 50 mV read voltage applied to the anode contact. Analysis of the results show that Ge30Se70 PMC are ionizing radiation tolerant and can retain a programmed state to a higher TID than NAND Flash memory.
ContributorsTaggart, Jennifer Lynn (Author) / Barnaby, Hugh (Thesis advisor) / Kozicki, Michael (Committee member) / Holbert, Keith E. (Committee member) / Arizona State University (Publisher)
Created2015
Description
Mechanical behavior of metallic thin films at room temperature (RT) is relatively well characterized. However, measuring the high temperature mechanical properties of thin films poses several challenges. These include ensuring uniformity in sample temperature and minimizing temporal fluctuations due to ambient heat loss, in addition to difficulties involved in mechanical testing of microscale samples. To address these issues, we designed and analyzed a MEMS-based high temperature tensile testing stage made from single crystal silicon. The freestanding thin film specimens were co-fabricated with the stage to ensure uniaxial loading. Multi-physics simulations of Joule heating, incorporating both radiation and convection heat transfer, were carried out using COMSOL to map the temperature distribution across the stage and the specimen. The simulations were validated using temperature measurements from a thermoreflectance microscope.
ContributorsEswarappa Prameela, Suhas (Author) / Rajagopalan, Jagannathan (Thesis advisor) / Wang, Liping (Committee member) / Jiao, Yang (Committee member) / Arizona State University (Publisher)
Created2016
Description
Layers of intrinsic hydrogenated amorphous silicon and amorphous silicon carbide
were prepared on a polished, intrinsic crystalline silicon substrate via plasma-enhanced chemical vapor deposition to simulate heterojunction device relevant stacks of various materials. The minority carrier lifetime, optical band gap and FTIR spectra were observed at incremental stages of thermal annealing. By observing the changes in the lifetimes the sample structure responsible for the most thermally robust surface passivation could be determined. These results were correlated to the optical band gap and the position and relative area of peaks in the FTIR spectra related to to silicon-hydrogen bonds in the layers. It was found that due to an increased presence of hydrogen bonded to silicon at voids within the passivating layer, hydrogenated amorphous silicon carbide at the interface of the substrate coupled with a hydrogenated amorphous silicon top layer provides better passivation after high temperature annealing than other device structures.
were prepared on a polished, intrinsic crystalline silicon substrate via plasma-enhanced chemical vapor deposition to simulate heterojunction device relevant stacks of various materials. The minority carrier lifetime, optical band gap and FTIR spectra were observed at incremental stages of thermal annealing. By observing the changes in the lifetimes the sample structure responsible for the most thermally robust surface passivation could be determined. These results were correlated to the optical band gap and the position and relative area of peaks in the FTIR spectra related to to silicon-hydrogen bonds in the layers. It was found that due to an increased presence of hydrogen bonded to silicon at voids within the passivating layer, hydrogenated amorphous silicon carbide at the interface of the substrate coupled with a hydrogenated amorphous silicon top layer provides better passivation after high temperature annealing than other device structures.
ContributorsJackson, Alec James (Author) / Holman, Zachary (Thesis advisor) / Bertoni, Mariana (Committee member) / Kozicki, Michael (Committee member) / Arizona State University (Publisher)
Created2016
Description
Electromigration (EM) has been a serious reliability concern in microelectronics packaging for close to half a century now. Whenever the challenges of EM are overcome newer complications arise such as the demand for better performance due to increased miniaturization of semiconductor devices or the problems faced due to undesirable properties of lead-free solders. The motivation for the work is that there exists no fully computational modeling study on EM damage in lead-free solders (and also in lead-based solders). Modeling techniques such as one developed here can give new insights on effects of different grain features and offer high flexibility in varying parameters and study the corresponding effects. In this work, a new computational approach has been developed to study void nucleation and initial void growth in solders due to metal atom diffusion. It involves the creation of a 3D stochastic mesoscale model of the microstructure of a polycrystalline Tin structure. The next step was to identify regions of current crowding or ‘hot-spots’. This was done through solving a finite difference scheme on top of the 3D structure. The nucleation of voids due to atomic diffusion from the regions of current crowding was modeled by diffusion from the identified hot-spot through a rejection free kinetic Monte-Carlo scheme. This resulted in the net movement of atoms from the cathode to the anode. The above steps of identifying the hotspot and diffusing the atoms at the hot-spot were repeated and this lead to the initial growth of the void. This procedure was studied varying different grain parameters. In the future, the goal is to explore the effect of more grain parameters and consider other mechanisms of failure such as the formation of intermetallic compounds due to interstitial diffusion and dissolution of underbump metallurgy.
ContributorsKarunakaran, Deepak (Thesis advisor) / Jiao, Yang (Committee member) / Chawla, Nikhilesh (Committee member) / Rajagopalan, Jagannathan (Committee member) / Arizona State University (Publisher)
Created2016
Description
Nanomaterials exhibit unique properties that are substantially different from their bulk counterparts. These unique properties have gained recognition and application for various fields and products including sensors, displays, photovoltaics, and energy storage devices. Aerosol Deposition (AD) is a relatively new method for depositing nanomaterials. AD utilizes a nozzle to accelerate the nanomaterial into a deposition chamber under near-vacuum conditions towards a substrate with which the nanomaterial collides and adheres. Traditional methods for designing nozzles at atmospheric conditions are not well suited for nozzle design for AD methods.
Computational Fluid Dynamics (CFD) software, ANSYS Fluent, is utilized to simulate two-phase flows consisting of a carrier gas (Helium) and silicon nanoparticles. The Cunningham Correction Factor is used to account for non-continuous effects at the relatively low pressures utilized in AD.
The nozzle, referred to herein as a boundary layer compensation (BLC) nozzle, comprises an area-ratio which is larger than traditionally designed nozzles to compensate for the thick boundary layer which forms within the viscosity-affected carrier gas flow. As a result, nanoparticles impact the substrate at velocities up to 300 times faster than the baseline nozzle.
Computational Fluid Dynamics (CFD) software, ANSYS Fluent, is utilized to simulate two-phase flows consisting of a carrier gas (Helium) and silicon nanoparticles. The Cunningham Correction Factor is used to account for non-continuous effects at the relatively low pressures utilized in AD.
The nozzle, referred to herein as a boundary layer compensation (BLC) nozzle, comprises an area-ratio which is larger than traditionally designed nozzles to compensate for the thick boundary layer which forms within the viscosity-affected carrier gas flow. As a result, nanoparticles impact the substrate at velocities up to 300 times faster than the baseline nozzle.
ContributorsHoffman, Trent (Author) / Holman, Zachary C (Thesis advisor) / Herrmann, Marcus (Committee member) / Kozicki, Michael (Committee member) / Arizona State University (Publisher)
Created2017
Description
Counterfeiting of goods is a widespread epidemic that is affecting the world economy. The conventional labeling techniques are proving inadequate to thwart determined counterfeiters equipped with sophisticated technologies. There is a growing need of a secure labeling that is easy to manufacture and analyze but extremely difficult to copy. Programmable metallization cell technology operates on a principle of controllable reduction of a metal ions to an electrodeposit in a solid electrolyte by application of bias. The nature of metallic electrodeposit is unique for each instance of growth, moreover it has a treelike, bifurcating fractal structure with high information capacity. These qualities of the electrodeposit can be exploited to use it as a physical unclonable function. The secure labels made from the electrodeposits grown in radial structure can provide enhanced authentication and protection from counterfeiting and tampering.
So far only microscale radial structures and electrodeposits have been fabricated which limits their use to labeling only high value items due to high cost associated with their fabrication and analysis. Therefore, there is a need for a simple recipe for fabrication of macroscale structure that does not need sophisticated lithography tools and cleanroom environment. Moreover, the growth kinetics and material characteristics of such macroscale electrodeposits need to be investigated. In this thesis, a recipe for fabrication of centimeter scale radial structure for growing Ag electrodeposits using simple fabrication techniques was proposed. Fractal analysis of an electrodeposit suggested information capacity of 1.27 x 1019. The kinetics of growth were investigated by electrical characterization of the full cell and only solid electrolyte at different temperatures. It was found that mass transport of ions is the rate limiting process in the growth. Materials and optical characterization techniques revealed that the subtle relief like structure and consequently distinct optical response of the electrodeposit provides an added layer of security. Thus, the enormous information capacity, ease of fabrication and simplicity of analysis make macroscale fractal electrodeposits grown in radial programmable metallization cells excellent candidates for application as physical unclonable functions.
So far only microscale radial structures and electrodeposits have been fabricated which limits their use to labeling only high value items due to high cost associated with their fabrication and analysis. Therefore, there is a need for a simple recipe for fabrication of macroscale structure that does not need sophisticated lithography tools and cleanroom environment. Moreover, the growth kinetics and material characteristics of such macroscale electrodeposits need to be investigated. In this thesis, a recipe for fabrication of centimeter scale radial structure for growing Ag electrodeposits using simple fabrication techniques was proposed. Fractal analysis of an electrodeposit suggested information capacity of 1.27 x 1019. The kinetics of growth were investigated by electrical characterization of the full cell and only solid electrolyte at different temperatures. It was found that mass transport of ions is the rate limiting process in the growth. Materials and optical characterization techniques revealed that the subtle relief like structure and consequently distinct optical response of the electrodeposit provides an added layer of security. Thus, the enormous information capacity, ease of fabrication and simplicity of analysis make macroscale fractal electrodeposits grown in radial programmable metallization cells excellent candidates for application as physical unclonable functions.
ContributorsChamele, Ninad (Author) / Kozicki, Michael (Thesis advisor) / Barnaby, Hugh (Thesis advisor) / Newman, Nathan (Committee member) / Arizona State University (Publisher)
Created2017