Matching Items (29)
Filtering by
- All Subjects: Materials Science
- Genre: Masters Thesis
- Creators: Alford, Terry
- Creators: Kozicki, Michael
- Status: Published
Description
Microwave (MW), thermal, and ultraviolet (UV) annealing were used to explore the response of Ag structures on a Ge-Se chalcogenide glass (ChG) thin film as flexible radiation sensors, and Te-Ti chalcogenide thin films as a material for diffusion barriers in microelectronics devices and processing of metallized Cu. Flexible resistive radiation sensors consisting of Ag electrodes on a Ge20Se80 ChG thin film and polyethylene naphthalate substrate were exposed to UV radiation. The sensors were mounted on PVC tubes of varying radii to induce bending strains and annealed under ambient conditions up to 150 oC. Initial sensor resistance was measured to be ~1012 Ω; after exposure to UV radiation, the resistance was ~104 Ω. Bending strain and low temperature annealing had no significant effect on the resistance of the sensors. Samples of Cu on Te-Ti thin films were annealed in vacuum for up to 30 minutes and were stable up to 500 oC as revealed using Rutherford backscattering spectrometry (RBS) and four-point-probe analysis. X-ray diffractometry (XRD) indicates Cu grain growth up to 500 oC and phase instability of the Te-Ti barrier at 600 oC. MW processing was performed in a 2.45-GHz microwave cavity on Cu/Te-Ti films for up to 30 seconds to induce oxide growth. Using a calibrated pyrometer above the sample, the temperature of the MW process was measured to be below a maximum of 186 oC. Four-point-probe analysis shows an increase in resistance with an increase in MW time. XRD indicates growth of CuO on the sample surface. RBS suggests oxidation throughout the Te-Ti film. Additional samples were exposed to 907 J/cm2 UV radiation in order to ensure other possible electromagnetically induced mechanisms were not active. There were no changes observed using XRD, RBS or four point probing.
ContributorsRoos, Benjamin, 1990- (Author) / Alford, Terry L. (Thesis advisor) / Theodore, David (Committee member) / Kozicki, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
Microwave dielectrics are widely used to make resonators and filters in telecommunication systems. The production of thin films with high dielectric constant and low loss could potentially enable a marked reduction in the size of devices and systems. However, studies of these materials in thin film form are very sparse. In this research, experiments were carried out on practical high-performance dielectrics including ZrTiO4-ZnNb2O6 (ZTZN) and Ba(Co,Zn)1/3Nb2/3O3 (BCZN) with high dielectric constant and low loss tangent. Thin films were deposited by laser ablation on various substrates, with a systematical study of growth conditions like substrate temperature, oxygen pressure and annealing to optimize the film quality, and the compositional, microstructural, optical and electric properties were characterized. The deposited ZTZN films were randomly oriented polycrystalline on Si substrate and textured on MgO substrate with a tetragonal lattice change at elevated temperature. The BCZN films deposited on MgO substrate showed superior film quality relative to that on other substrates, which grow epitaxially with an orientation of (001) // MgO (001) and (100) // MgO (100) when substrate temperature was above 500 oC. In-situ annealing at growth temperature in 200 mTorr oxygen pressure was found to enhance the quality of the films, reducing the peak width of the X-ray Diffraction (XRD) rocking curve to 0.53o and the χmin of channeling Rutherford Backscattering Spectrometry (RBS) to 8.8% when grown at 800oC. Atomic Force Microscopy (AFM) was used to study the topography and found a monotonic decrease in the surface roughness when the growth temperature increased. Optical absorption and transmission measurements were used to determine the energy bandgap and the refractive index respectively. A low-frequency dielectric constant of 34 was measured using a planar interdigital measurement structure. The resistivity of the film is ~3×1010 ohm·cm at room temperature and has an activation energy of thermal activated current of 0.66 eV.
ContributorsLi, You (Author) / Newman, Nathan (Thesis advisor) / Alford, Terry (Committee member) / Singh, Rakesh (Committee member) / Arizona State University (Publisher)
Created2013
Description
Carrier lifetime is one of the few parameters which can give information about the low defect densities in today's semiconductors. In principle there is no lower limit to the defect density determined by lifetime measurements. No other technique can easily detect defect densities as low as 10-9 - 10-10 cm-3 in a simple, contactless room temperature measurement. However in practice, recombination lifetime τr measurements such as photoconductance decay (PCD) and surface photovoltage (SPV) that are widely used for characterization of bulk wafers face serious limitations when applied to thin epitaxial layers, where the layer thickness is smaller than the minority carrier diffusion length Ln. Other methods such as microwave photoconductance decay (µ-PCD), photoluminescence (PL), and frequency-dependent SPV, where the generated excess carriers are confined to the epitaxial layer width by using short excitation wavelengths, require complicated configuration and extensive surface passivation processes that make them time-consuming and not suitable for process screening purposes. Generation lifetime τg, typically measured with pulsed MOS capacitors (MOS-C) as test structures, has been shown to be an eminently suitable technique for characterization of thin epitaxial layers. It is for these reasons that the IC community, largely concerned with unipolar MOS devices, uses lifetime measurements as a "process cleanliness monitor." However when dealing with ultraclean epitaxial wafers, the classic MOS-C technique measures an effective generation lifetime τg eff which is dominated by the surface generation and hence cannot be used for screening impurity densities. I have developed a modified pulsed MOS technique for measuring generation lifetime in ultraclean thin p/p+ epitaxial layers which can be used to detect metallic impurities with densities as low as 10-10 cm-3. The widely used classic version has been shown to be unable to effectively detect such low impurity densities due to the domination of surface generation; whereas, the modified version can be used suitably as a metallic impurity density monitoring tool for such cases.
ContributorsElhami Khorasani, Arash (Author) / Alford, Terry (Thesis advisor) / Goryll, Michael (Committee member) / Bertoni, Mariana (Committee member) / Arizona State University (Publisher)
Created2013
Description
Nonvolatile memory (NVM) technologies have been an integral part of electronic systems for the past 30 years. The ideal non-volatile memory have minimal physical size, energy usage, and cost while having maximal speed, capacity, retention time, and radiation hardness. A promising candidate for next-generation memory is ion-conducting bridging RAM which is referred to as programmable metallization cell (PMC), conductive bridge RAM (CBRAM), or electrochemical metallization memory (ECM), which is likely to surpass flash memory in all the ideal memory characteristics. A comprehensive physics-based model is needed to completely understand PMC operation and assist in design optimization.
To advance the PMC modeling effort, this thesis presents a precise physical model parameterizing materials associated with both ion-rich and ion-poor layers of the PMC's solid electrolyte, so that captures the static electrical behavior of the PMC in both its low-resistance on-state (LRS) and high resistance off-state (HRS). The experimental data is measured from a chalcogenide glass PMC designed and manufactured at ASU. The static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge30Se70 ChG film is characterized and modeled using three dimensional simulation code written in Silvaco Atlas finite element analysis software. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfunctions, density of states, carrier mobilities, dielectric constants, and affinities.
The sensitivity of our modeled PMC to the variation of its prominent achieved material parameters is examined on the HRS and LRS impedance behavior.
The obtained accurate set of material parameters for both Ag-rich and Ag-poor ChG systems and process variation verification on electrical characteristics enables greater fidelity in PMC device simulation, which significantly enhances our ability to understand the underlying physics of ChG-based resistive switching memory.
To advance the PMC modeling effort, this thesis presents a precise physical model parameterizing materials associated with both ion-rich and ion-poor layers of the PMC's solid electrolyte, so that captures the static electrical behavior of the PMC in both its low-resistance on-state (LRS) and high resistance off-state (HRS). The experimental data is measured from a chalcogenide glass PMC designed and manufactured at ASU. The static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge30Se70 ChG film is characterized and modeled using three dimensional simulation code written in Silvaco Atlas finite element analysis software. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfunctions, density of states, carrier mobilities, dielectric constants, and affinities.
The sensitivity of our modeled PMC to the variation of its prominent achieved material parameters is examined on the HRS and LRS impedance behavior.
The obtained accurate set of material parameters for both Ag-rich and Ag-poor ChG systems and process variation verification on electrical characteristics enables greater fidelity in PMC device simulation, which significantly enhances our ability to understand the underlying physics of ChG-based resistive switching memory.
ContributorsRajabi, Saba (Author) / Barnaby, Hugh (Thesis advisor) / Kozicki, Michael (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2014
Description
Gallium-based liquid metals are of interest for a variety of applications including flexible electronics, soft robotics, and biomedical devices. Still, nano- to microscale device fabrication with these materials is challenging because of their strong adhesion to a majority of substrates. This unusual high adhesion is attributed to the formation of a thin oxide shell; however, its role in the adhesion process has not yet been established. In the first part of the thesis, we described a multiscale study aiming at understanding the fundamental mechanisms governing wetting and adhesion of gallium-based liquid metals. In particular, macroscale dynamic contact angle measurements were coupled with Scanning Electron Microscope (SEM) imaging to relate macroscopic drop adhesion to morphology of the liquid metal-surface interface. In addition, room temperature liquid-metal microfluidic devices are also attractive systems for hyperelastic strain sensing. Currently two types of liquid metal-based strain sensors exist for inplane measurements: single-microchannel resistive and two-microchannel capacitive devices. However, with a winding serpentine channel geometry, these sensors typically have a footprint of about a square centimeter, limiting the number of sensors that can be embedded into. In the second part of the thesis, firstly, simulations and an experimental setup consisting of two GaInSn filled tubes submerged within a dielectric liquid bath are used to quantify the effects of the cylindrical electrode geometry including diameter, spacing, and meniscus shape as well as dielectric constant of the insulating liquid and the presence of tubing on the overall system's capacitance. Furthermore, a procedure for fabricating the two-liquid capacitor within a single straight polydiemethylsiloxane channel is developed. Lastly, capacitance and response of this compact device to strain and operational issues arising from complex hydrodynamics near liquid-liquid and liquid-elastomer interfaces are described.
ContributorsLiu, Shanliangzi (Author) / Rykaczewski, Konrad (Thesis advisor) / Alford, Terry (Committee member) / Herrmann, Marcus (Committee member) / Hildreth, Owen (Committee member) / Arizona State University (Publisher)
Created2015
Description
Pb-free solder joints are commonly used as interconnects in semiconductor packaging. One of the major defects affecting the mechanical performance of solder joints are reflow pores that form during processing. These pores exhibit significant variability in size and distribution, and understanding the effects of pore geometry on failure is an important reliability concern. In this thesis, the pore microstructures of solder joint samples and the localized plastic deformation around individual pores was characterized in 3D using lab scale X-ray Microtomography. To observe the deformation of a solder joint in 3D, a solder joint was imaged with Microtomography after reflow and then deformed in shear in several loading steps with additional tomography data taken between each. The 3D tomography datasets were then segmented using the 3D Livewire technique into regions corresponding to solder and pores, and used to generate 3D models of the joint at each strain value using Mimics software. The extent of deformation of individual pores in the joint as a function of strain was quantified using sphericity measurements, and correlated with the observed cracking in the joint. In addition, the error inherent in the data acquisition and 3D modeling process was also quantified. The progression of damage observed with X-ray Microtomography was then used to validate the deformation and failure predicted by a Finite Element (FE) simulation. The FE model was based on the as-reflowed tomography data, and incorporated a ductile damage failure model to simulate fracture. Using the measured sphericity change and cracking information obtained from the tomography data, the FE model is shown to correctly capture the broad plastic deformation and strain localization seen in the actual joint, as well as the crack propagation. Lastly, Digital Image Correlation was investigated as a method of obtaining improved local strain measurements in 3D. This technique measures the displacement of the inherent microstructural features of the joint, and can give localized strain measurements that can be directly comparable to that predicted by modeling. The technique is demonstrated in 2D on Pb-Sn solder, and example 3D data is presented for future analysis.
ContributorsPadilla, Erick (Author) / Chawla, Nikhilesh (Thesis advisor) / Alford, Terry (Committee member) / Krause, Stephen (Committee member) / Arizona State University (Publisher)
Created2012
Description
Metal Organic Frameworks(MOFs) have been used in various applications, including
sensors. The unique crystalline structure of MOFs in addition to controllability of
their pore size and their intake selectivity makes them a promising method of detection.
Detection of metal ions in water using a binary mixture of luminescent MOFs
has been reported. 3 MOFs(ZrPDA, UiO-66 and UiO-66-NH2) as detectors and 4
metal ions(Pb2+, Ni2+, Ba2+ and Cu2+) as the target species were chosen based on
cost, water stability, application and end goals.
It is possible to detect metal ions such as Pb2+ at concentrations at low as 0.005
molar using MOFs. Also, based on the luminescence responses, a method of distinguishing
between similar metal ions has been proposed. It is shown that using a
mixture of MOFs with dierent reaction to metal ions can lead to unique and specic
3D luminescence maps, which can be used to identify the present metal ions in water
and their amount.
In addition to the response of a single MOF to addition of a single metal ion,
luminescence response of ZrPDA + UiO-66 mixture to increasing concentration of
each of 4 metal ions was studied, and summarized. A new peak is observed in the
mixture, that did not exist before, and it is proposed that this peak requires metal
ions to activate
sensors. The unique crystalline structure of MOFs in addition to controllability of
their pore size and their intake selectivity makes them a promising method of detection.
Detection of metal ions in water using a binary mixture of luminescent MOFs
has been reported. 3 MOFs(ZrPDA, UiO-66 and UiO-66-NH2) as detectors and 4
metal ions(Pb2+, Ni2+, Ba2+ and Cu2+) as the target species were chosen based on
cost, water stability, application and end goals.
It is possible to detect metal ions such as Pb2+ at concentrations at low as 0.005
molar using MOFs. Also, based on the luminescence responses, a method of distinguishing
between similar metal ions has been proposed. It is shown that using a
mixture of MOFs with dierent reaction to metal ions can lead to unique and specic
3D luminescence maps, which can be used to identify the present metal ions in water
and their amount.
In addition to the response of a single MOF to addition of a single metal ion,
luminescence response of ZrPDA + UiO-66 mixture to increasing concentration of
each of 4 metal ions was studied, and summarized. A new peak is observed in the
mixture, that did not exist before, and it is proposed that this peak requires metal
ions to activate
ContributorsSirous, Peyman (Author) / Mu, Bin (Thesis advisor) / Alford, Terry (Thesis advisor) / Jiao, Yang (Committee member) / Arizona State University (Publisher)
Created2018
Description
The hierarchical silica structure of the Coscinodiscus wailesii diatom was studied due to its intriguing optical properties. To bring the diatom into light harvesting applications, three crucial factors were investigated, including closely-packed diatom monolayer formation, bonding of the diatoms on a substrate, and conversion of silica diatom shells into silicon.
The closely-packed monolayer formation of diatom valves on silicon substrates was accomplished using their hydrodynamic properties and the surface tension of water. Valves dispersed on a hydrophobic surface were able to float-up with a preferential orientation (convex side facing the water surface) when water was added. The floating diatom monolayer was subsequently transferred to a silicon substrate. A closely-packed diatom monolayer on the silicon substrate was obtained after the water evaporated at room temperature.
The diatom monolayer was then directly bonded onto the substrate via a sintering process at high temperature in air. The percentage of bonded valves increased as the temperature increased. The valves started to sinter into the substrate at 1100°C. The sintering process caused shrinkage of the nanopores at temperatures above 1100°C. The more delicate structure was more sensitive to the elevated temperature. The cribellum, the most intricate nanostructure of the diatom (~50 nm), disappeared at 1125°C. The cribrum, consisting of approximated 100-300 nm diameter pores, disappeared at 1150°C. The areola, the micro-chamber-liked structure, can survive up to 1150°C. At 1200°C, the complete nanostructure was destroyed. In addition, cross-section images revealed that the valves fused into the thermally-grown oxide layer that was generated on the substrate at high temperatures.
The silica-sintered diatom close-packed monolayer, processed at 1125°C, was magnesiothermically converted into porous silicon using magnesium silicide. X-ray diffraction, infrared absorption, energy dispersive X-say spectra and secondary electron images confirmed the formation of a Si layer with preserved diatom nano-microstructure. The conversion process and subsequent application of a PEDOT:PSS coating both decreased the light reflection from the sample. The photocurrent and reflectance spectra revealed that the Si-diatom dominantly enhanced light absorption between 414 to 586 nm and 730 to 800 nm. Though some of the structural features disappeared during the sintering process, the diatom is still able to improve light absorption. Therefore, the sintering process can be used for diatom direct bonding in light harvesting applications.
The closely-packed monolayer formation of diatom valves on silicon substrates was accomplished using their hydrodynamic properties and the surface tension of water. Valves dispersed on a hydrophobic surface were able to float-up with a preferential orientation (convex side facing the water surface) when water was added. The floating diatom monolayer was subsequently transferred to a silicon substrate. A closely-packed diatom monolayer on the silicon substrate was obtained after the water evaporated at room temperature.
The diatom monolayer was then directly bonded onto the substrate via a sintering process at high temperature in air. The percentage of bonded valves increased as the temperature increased. The valves started to sinter into the substrate at 1100°C. The sintering process caused shrinkage of the nanopores at temperatures above 1100°C. The more delicate structure was more sensitive to the elevated temperature. The cribellum, the most intricate nanostructure of the diatom (~50 nm), disappeared at 1125°C. The cribrum, consisting of approximated 100-300 nm diameter pores, disappeared at 1150°C. The areola, the micro-chamber-liked structure, can survive up to 1150°C. At 1200°C, the complete nanostructure was destroyed. In addition, cross-section images revealed that the valves fused into the thermally-grown oxide layer that was generated on the substrate at high temperatures.
The silica-sintered diatom close-packed monolayer, processed at 1125°C, was magnesiothermically converted into porous silicon using magnesium silicide. X-ray diffraction, infrared absorption, energy dispersive X-say spectra and secondary electron images confirmed the formation of a Si layer with preserved diatom nano-microstructure. The conversion process and subsequent application of a PEDOT:PSS coating both decreased the light reflection from the sample. The photocurrent and reflectance spectra revealed that the Si-diatom dominantly enhanced light absorption between 414 to 586 nm and 730 to 800 nm. Though some of the structural features disappeared during the sintering process, the diatom is still able to improve light absorption. Therefore, the sintering process can be used for diatom direct bonding in light harvesting applications.
ContributorsRojsatien, Srisuda (Author) / Goryll, Michael (Thesis advisor) / Alford, Terry (Thesis advisor) / Theodore, David (Committee member) / Arizona State University (Publisher)
Created2018
Description
A piezoelectric transducer, comprised of electroded and active pad PZT layer atop a backing PZT layer and protected with an acoustic matching layer, and operating under a pulse-echo technique for longitudinal ultrasonic imaging, acts as both source and detector.
Ultrasonic transducer stacks (modules), which had failed or passed during pulse-echo sensitivity testing, were received from Consortium X. With limited background information on these stacks, the central theme was to determine the origin(s) of failure via the use of thermal and physicochemical characterization techniques.
The optical and scanning electron microscopy revealed that contact electrode layers are discontinuous in all samples, while delaminations between electrodes and pad layer were observed in failed samples. The X-ray diffraction data on the pad PZT revealed an overall c/a ratio of 1.022 ratio and morphotropic boundary composition, with significant variations of the Zr to Ti ratio within a sample and between samples. Electron probe microanalysis confirmed that the overall Zr to Ti ratio of the pad PZT was 52/48, and higher amounts of excess PbO in failed samples, whereas, inductively coupled plasma mass spectrometry revealed the presence of Mn, Al, and Sb (dopants) and presence of Cu (sintering aid) in in this hard (pad) PZT. Additionally, three exothermic peaks during thermal analysis was indicative of incomplete calcination of pad PZT. Moreover, transmission electron microscopy and scanning transmission electron microscopy revealed the presence of parylene at the Ag-pad PZT interface and within the pores of pad PZT (in failed samples subjected to electric fields). This further dilutes the electrical, mechanical, and electromechanical properties of the pad PZT, which in turn detrimentally influences the pulse echo sensitivity.
Ultrasonic transducer stacks (modules), which had failed or passed during pulse-echo sensitivity testing, were received from Consortium X. With limited background information on these stacks, the central theme was to determine the origin(s) of failure via the use of thermal and physicochemical characterization techniques.
The optical and scanning electron microscopy revealed that contact electrode layers are discontinuous in all samples, while delaminations between electrodes and pad layer were observed in failed samples. The X-ray diffraction data on the pad PZT revealed an overall c/a ratio of 1.022 ratio and morphotropic boundary composition, with significant variations of the Zr to Ti ratio within a sample and between samples. Electron probe microanalysis confirmed that the overall Zr to Ti ratio of the pad PZT was 52/48, and higher amounts of excess PbO in failed samples, whereas, inductively coupled plasma mass spectrometry revealed the presence of Mn, Al, and Sb (dopants) and presence of Cu (sintering aid) in in this hard (pad) PZT. Additionally, three exothermic peaks during thermal analysis was indicative of incomplete calcination of pad PZT. Moreover, transmission electron microscopy and scanning transmission electron microscopy revealed the presence of parylene at the Ag-pad PZT interface and within the pores of pad PZT (in failed samples subjected to electric fields). This further dilutes the electrical, mechanical, and electromechanical properties of the pad PZT, which in turn detrimentally influences the pulse echo sensitivity.
ContributorsPeri, Prudhvi Ram (Author) / Dey, Sandwip (Thesis advisor) / Smith, David (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2018
Description
In this project, current-voltage (I-V) and Deep Level Transient Spectroscopy (DLTS) measurements are used to (a) characterize the electrical properties of Nb/p-type Si Schottky barriers, (b) identify the concentration and physical character of the electrically active defects present in the depletion region, and (c) use thermal processing to reduce the concentration or eliminate the defects. Barrier height determinations using temperature-dependent I-V measurements indicate that the barrier height decreases from 0.50 eV to 0.48 eV for anneals above 200 C. The electrically-active defect concentration measured using DLTS (deep level transient spectroscopy) drops markedly after anneals at 250 C.
A significant increase in leakage currents is almost always observed in near-ideal devices upon annealing. In contrast, non-ideal devices dominated by leakage currents annealed at 150 C to 250 C exhibit a significant decrease in such currents.
A significant increase in leakage currents is almost always observed in near-ideal devices upon annealing. In contrast, non-ideal devices dominated by leakage currents annealed at 150 C to 250 C exhibit a significant decrease in such currents.
ContributorsKrishna Murthy, Madhu (Author) / Newman, Nathan (Thesis advisor) / Goryll, Michael (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2018